CN1188909C - 一种非易失性存储单元的编程及擦除方法 - Google Patents
一种非易失性存储单元的编程及擦除方法 Download PDFInfo
- Publication number
- CN1188909C CN1188909C CNB021051747A CN02105174A CN1188909C CN 1188909 C CN1188909 C CN 1188909C CN B021051747 A CNB021051747 A CN B021051747A CN 02105174 A CN02105174 A CN 02105174A CN 1188909 C CN1188909 C CN 1188909C
- Authority
- CN
- China
- Prior art keywords
- voltage
- memory cell
- trap
- well area
- source electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000015654 memory Effects 0.000 title claims abstract description 206
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000009792 diffusion process Methods 0.000 claims description 48
- 230000000694 effects Effects 0.000 claims description 17
- 238000007667 floating Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000002784 hot electron Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Abstract
Description
Claims (19)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021051747A CN1188909C (zh) | 2002-02-25 | 2002-02-25 | 一种非易失性存储单元的编程及擦除方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021051747A CN1188909C (zh) | 2002-02-25 | 2002-02-25 | 一种非易失性存储单元的编程及擦除方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1441480A CN1441480A (zh) | 2003-09-10 |
CN1188909C true CN1188909C (zh) | 2005-02-09 |
Family
ID=27768430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021051747A Expired - Fee Related CN1188909C (zh) | 2002-02-25 | 2002-02-25 | 一种非易失性存储单元的编程及擦除方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1188909C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7405441B2 (en) | 2005-03-11 | 2008-07-29 | Infineon Technology Ag | Semiconductor memory |
US7342833B2 (en) * | 2005-08-23 | 2008-03-11 | Freescale Semiconductor, Inc. | Nonvolatile memory cell programming |
US7855411B2 (en) | 2007-05-25 | 2010-12-21 | Macronix International Co., Ltd. | Memory cell |
US7795088B2 (en) | 2007-05-25 | 2010-09-14 | Macronix International Co., Ltd. | Method for manufacturing memory cell |
US10482968B1 (en) * | 2018-11-22 | 2019-11-19 | Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. | Local x-decoder and related memory system |
-
2002
- 2002-02-25 CN CNB021051747A patent/CN1188909C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1441480A (zh) | 2003-09-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1670961A (zh) | 自对准分离栅与非型快闪存储器及制造工艺 | |
CN1967878A (zh) | 单层多晶硅非易失性存储器装置的操作方法 | |
CN1949522A (zh) | 非易失性存储单元与集成电路 | |
CN1790717A (zh) | 非挥发性存储单元以及相关操作方法 | |
CN101068020A (zh) | 存储单元阵列及其制造方法 | |
CN1495905A (zh) | 自对准分离栅极与非闪存及制造方法 | |
CN1943028A (zh) | 垂直eeprom nrom存储器件 | |
CN1689162A (zh) | 高密度氮化物只读存储器鳍形场效晶体管 | |
CN1770478A (zh) | 非挥发存储器及其制造方法 | |
CN1637949A (zh) | 具有加强编程和擦除功能的与非闪速存储器及其制造方法 | |
CN1841783A (zh) | 分裂栅极存储单元及制造其阵列的方法 | |
CN1776914A (zh) | 多位非易失性存储器件及其操作方法和制造方法 | |
CN1310846A (zh) | 电可擦除非易失性存储器 | |
CN1258225C (zh) | 非易失性存储装置 | |
CN1779982A (zh) | 只读存储器及只读存储单元阵列及其编程与擦除方法 | |
CN1828935A (zh) | 半导体元件及其制造方法与记忆体元件及其操作方法 | |
CN1619702A (zh) | 内存元件的增进抹除并且避免过度抹除的方法及其结构 | |
CN1220266C (zh) | 非易失性半导体存储器及其制造工艺 | |
CN1188909C (zh) | 一种非易失性存储单元的编程及擦除方法 | |
CN1822232A (zh) | 多阶氮化硅只读记忆胞的程序化方法 | |
CN1404152A (zh) | 非易失性半导体存储器件及其制造方法和操作方法 | |
CN1606166A (zh) | 半导体存储器及其驱动方法 | |
CN1855508A (zh) | 非挥发性存储器及其制造方法以及其操作方法 | |
CN1845338A (zh) | 半导体元件,储存元件,储存单元与储存元件的操作方法 | |
CN1259723C (zh) | 闪存的结构及其操作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: LIJING SEMICONDUCTOR CO., LTD. Free format text: FORMER OWNER: LIWANG ELECTRONIC CO., LTD Effective date: 20050107 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20050107 Address after: Hsinchu city of Taiwan Province Patentee after: Powerchip Semiconductor Corp. Address before: Hsinchu city of Taiwan Province Patentee before: Liwang Electronic Co., Ltd |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050209 Termination date: 20110225 |