CN1606166A - 半导体存储器及其驱动方法 - Google Patents
半导体存储器及其驱动方法 Download PDFInfo
- Publication number
- CN1606166A CN1606166A CN200410083562.3A CN200410083562A CN1606166A CN 1606166 A CN1606166 A CN 1606166A CN 200410083562 A CN200410083562 A CN 200410083562A CN 1606166 A CN1606166 A CN 1606166A
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- CN
- China
- Prior art keywords
- mentioned
- voltage
- semiconductor memory
- terminal
- active area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 7
- 239000002784 hot electron Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 230000004807 localization Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP346842/03 | 2003-10-06 | ||
JP346842/2003 | 2003-10-06 | ||
JP2003346842A JP4255797B2 (ja) | 2003-10-06 | 2003-10-06 | 半導体記憶装置及びその駆動方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1606166A true CN1606166A (zh) | 2005-04-13 |
CN100483719C CN100483719C (zh) | 2009-04-29 |
Family
ID=34386386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100835623A Expired - Fee Related CN100483719C (zh) | 2003-10-06 | 2004-10-08 | 半导体存储器及其驱动方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7136301B2 (zh) |
JP (1) | JP4255797B2 (zh) |
KR (1) | KR100568062B1 (zh) |
CN (1) | CN100483719C (zh) |
TW (1) | TWI251311B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006032797A (ja) * | 2004-07-20 | 2006-02-02 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置及びその製造方法 |
US7687370B2 (en) * | 2006-01-27 | 2010-03-30 | Freescale Semiconductor, Inc. | Method of forming a semiconductor isolation trench |
KR100706817B1 (ko) * | 2006-03-13 | 2007-04-12 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그 형성 방법 |
JP4680116B2 (ja) * | 2006-03-31 | 2011-05-11 | Okiセミコンダクタ株式会社 | 半導体装置 |
JP2008027938A (ja) * | 2006-07-18 | 2008-02-07 | Oki Electric Ind Co Ltd | 不揮発性メモリ |
US7608504B2 (en) * | 2006-08-30 | 2009-10-27 | Macronix International Co., Ltd. | Memory and manufacturing method thereof |
JP2008153424A (ja) | 2006-12-18 | 2008-07-03 | Oki Electric Ind Co Ltd | 半導体記憶装置及びこの半導体記憶装置への情報の記録方法 |
KR101442175B1 (ko) * | 2008-05-23 | 2014-09-18 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 메모리 셀 어레이의 배치방법 |
JP5462500B2 (ja) * | 2009-02-27 | 2014-04-02 | ラピスセミコンダクタ株式会社 | 不揮発性メモリ装置 |
JP2019057532A (ja) * | 2017-09-19 | 2019-04-11 | 東芝メモリ株式会社 | 半導体メモリ |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001110918A (ja) | 1999-10-04 | 2001-04-20 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
JP4014431B2 (ja) * | 2002-03-27 | 2007-11-28 | 富士通株式会社 | 半導体記憶装置及び半導体記憶装置の製造方法 |
JP2003309194A (ja) * | 2002-04-18 | 2003-10-31 | Nec Electronics Corp | 半導体記憶装置とその製造方法 |
DE10241173A1 (de) * | 2002-09-05 | 2004-03-11 | Infineon Technologies Ag | Halbleiterspeicher mit vertikalen Speichertransistoren in einer Zellenfeldanordnung mit 1-2F2-Zellen |
US7016225B2 (en) * | 2002-11-26 | 2006-03-21 | Tower Semiconductor Ltd. | Four-bit non-volatile memory transistor and array |
US6735124B1 (en) * | 2002-12-10 | 2004-05-11 | Advanced Micro Devices, Inc. | Flash memory device having four-bit cells |
-
2003
- 2003-10-06 JP JP2003346842A patent/JP4255797B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-21 TW TW093128542A patent/TWI251311B/zh not_active IP Right Cessation
- 2004-10-04 US US10/956,124 patent/US7136301B2/en active Active
- 2004-10-05 KR KR1020040079079A patent/KR100568062B1/ko not_active IP Right Cessation
- 2004-10-08 CN CNB2004100835623A patent/CN100483719C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100568062B1 (ko) | 2006-04-07 |
JP2005116667A (ja) | 2005-04-28 |
JP4255797B2 (ja) | 2009-04-15 |
KR20050033479A (ko) | 2005-04-12 |
US20050073002A1 (en) | 2005-04-07 |
TW200518286A (en) | 2005-06-01 |
TWI251311B (en) | 2006-03-11 |
US7136301B2 (en) | 2006-11-14 |
CN100483719C (zh) | 2009-04-29 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER OWNER: RENESAS TECHNOLOGY CORP. Effective date: 20100925 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20100925 Address after: Kawasaki, Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan, Japan Patentee before: Renesas Technology Corp. |
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CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: Renesas Electronics Corporation Address before: Kawasaki, Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
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CP02 | Change in the address of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090429 Termination date: 20191008 |
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CF01 | Termination of patent right due to non-payment of annual fee |