CN1441480A - 一种非易失性存储单元的编程及擦除方法 - Google Patents
一种非易失性存储单元的编程及擦除方法 Download PDFInfo
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- CN1441480A CN1441480A CN 02105174 CN02105174A CN1441480A CN 1441480 A CN1441480 A CN 1441480A CN 02105174 CN02105174 CN 02105174 CN 02105174 A CN02105174 A CN 02105174A CN 1441480 A CN1441480 A CN 1441480A
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- 230000015654 memory Effects 0.000 title claims abstract description 191
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000009792 diffusion process Methods 0.000 claims description 44
- 230000000694 effects Effects 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000007667 floating Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000002784 hot electron Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB021051747A CN1188909C (zh) | 2002-02-25 | 2002-02-25 | 一种非易失性存储单元的编程及擦除方法 |
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CNB021051747A CN1188909C (zh) | 2002-02-25 | 2002-02-25 | 一种非易失性存储单元的编程及擦除方法 |
Publications (2)
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CN1441480A true CN1441480A (zh) | 2003-09-10 |
CN1188909C CN1188909C (zh) | 2005-02-09 |
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CNB021051747A Expired - Fee Related CN1188909C (zh) | 2002-02-25 | 2002-02-25 | 一种非易失性存储单元的编程及擦除方法 |
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CN (1) | CN1188909C (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7405441B2 (en) | 2005-03-11 | 2008-07-29 | Infineon Technology Ag | Semiconductor memory |
US7795088B2 (en) | 2007-05-25 | 2010-09-14 | Macronix International Co., Ltd. | Method for manufacturing memory cell |
CN101243520B (zh) * | 2005-08-23 | 2010-12-15 | 飞思卡尔半导体公司 | 非易失性存储单元的编程 |
US7855411B2 (en) | 2007-05-25 | 2010-12-21 | Macronix International Co., Ltd. | Memory cell |
CN110827903A (zh) * | 2018-11-22 | 2020-02-21 | 武汉新芯集成电路制造有限公司 | 本地x解码器及存储系统 |
-
2002
- 2002-02-25 CN CNB021051747A patent/CN1188909C/zh not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7405441B2 (en) | 2005-03-11 | 2008-07-29 | Infineon Technology Ag | Semiconductor memory |
CN101243520B (zh) * | 2005-08-23 | 2010-12-15 | 飞思卡尔半导体公司 | 非易失性存储单元的编程 |
US7795088B2 (en) | 2007-05-25 | 2010-09-14 | Macronix International Co., Ltd. | Method for manufacturing memory cell |
US7855411B2 (en) | 2007-05-25 | 2010-12-21 | Macronix International Co., Ltd. | Memory cell |
CN101312197B (zh) * | 2007-05-25 | 2011-03-09 | 旺宏电子股份有限公司 | 储存单元及其制造方法与操作方法 |
CN110827903A (zh) * | 2018-11-22 | 2020-02-21 | 武汉新芯集成电路制造有限公司 | 本地x解码器及存储系统 |
CN110827903B (zh) * | 2018-11-22 | 2021-09-03 | 武汉新芯集成电路制造有限公司 | 本地x解码器及存储系统 |
Also Published As
Publication number | Publication date |
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CN1188909C (zh) | 2005-02-09 |
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Owner name: LIJING SEMICONDUCTOR CO., LTD. Free format text: FORMER OWNER: LIWANG ELECTRONIC CO., LTD Effective date: 20050107 |
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