JP2009506472A - 不揮発性メモリ・セルのプログラミング - Google Patents

不揮発性メモリ・セルのプログラミング Download PDF

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Publication number
JP2009506472A
JP2009506472A JP2008527982A JP2008527982A JP2009506472A JP 2009506472 A JP2009506472 A JP 2009506472A JP 2008527982 A JP2008527982 A JP 2008527982A JP 2008527982 A JP2008527982 A JP 2008527982A JP 2009506472 A JP2009506472 A JP 2009506472A
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JP
Japan
Prior art keywords
voltage
applying
programming
programming voltage
source
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Pending
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JP2008527982A
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English (en)
Japanese (ja)
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JP2009506472A5 (cg-RX-API-DMAC7.html
Inventor
キャヴィンズ，クレイグ・エイ
ニセット，マーティン・エル
パーカー，ローレーン・エイチ
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NXP USA Inc
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NXP USA Inc
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Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2009506472A publication Critical patent/JP2009506472A/ja
Publication of JP2009506472A5 publication Critical patent/JP2009506472A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP2008527982A 2005-08-23 2006-08-16 不揮発性メモリ・セルのプログラミング Pending JP2009506472A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/209,294 US7342833B2 (en) 2005-08-23 2005-08-23 Nonvolatile memory cell programming
PCT/US2006/031840 WO2007024565A2 (en) 2005-08-23 2006-08-16 Nonvolatile memory cell programming

Publications (2)

Publication Number Publication Date
JP2009506472A true JP2009506472A (ja) 2009-02-12
JP2009506472A5 JP2009506472A5 (cg-RX-API-DMAC7.html) 2009-09-24

Family

ID=37772152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008527982A Pending JP2009506472A (ja) 2005-08-23 2006-08-16 不揮発性メモリ・セルのプログラミング

Country Status (5)

Country Link
US (1) US7342833B2 (cg-RX-API-DMAC7.html)
JP (1) JP2009506472A (cg-RX-API-DMAC7.html)
CN (1) CN101243520B (cg-RX-API-DMAC7.html)
TW (1) TW200713281A (cg-RX-API-DMAC7.html)
WO (1) WO2007024565A2 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204342A (ja) * 2010-03-24 2011-10-13 Ememory Technology Inc チャネル熱電子注入プログラミング方法及び関連する装置
US8467245B2 (en) 2010-03-24 2013-06-18 Ememory Technology Inc. Non-volatile memory device with program current clamp and related method

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KR100771520B1 (ko) * 2006-10-23 2007-10-30 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7630250B2 (en) * 2007-10-16 2009-12-08 Spansion Llc Controlled ramp rates for metal bitlines during write operations from high voltage driver for memory applications
JP5384012B2 (ja) * 2008-01-24 2014-01-08 ローム株式会社 Ｅｅｐｒｏｍおよびそれを用いた電子機器
US7764550B2 (en) * 2008-11-25 2010-07-27 Freescale Semiconductor, Inc. Method of programming a non-volatile memory
US7929343B2 (en) * 2009-04-07 2011-04-19 Micron Technology, Inc. Methods, devices, and systems relating to memory cells having a floating body
CN103165188A (zh) * 2011-12-09 2013-06-19 中国科学院微电子研究所 一种多位非挥发存储单元及阵列的编程方法
CN112638199A (zh) * 2019-06-19 2021-04-09 法鲁克系统股份有限公司 包含熔岩石的头发造型装置
KR20230105274A (ko) * 2022-01-03 2023-07-11 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 제조 방법

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JPH02126498A (ja) * 1988-07-08 1990-05-15 Hitachi Ltd 不揮発性半導体記憶装置
JPH0773685A (ja) * 1993-09-06 1995-03-17 Hitachi Ltd 半導体不揮発性記憶装置
JPH07169284A (ja) * 1993-12-13 1995-07-04 Toshiba Corp 不揮発性半導体記憶装置
JPH10228784A (ja) * 1997-02-12 1998-08-25 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH10302486A (ja) * 1996-08-30 1998-11-13 Sanyo Electric Co Ltd 半導体記憶装置
JP2002109891A (ja) * 2000-09-28 2002-04-12 Hitachi Ltd 不揮発性メモリと不揮発性メモリの書き込み方法
JP2002319289A (ja) * 2000-12-07 2002-10-31 Saifun Semiconductors Ltd Ｎｒｏｍアレイの基準セルのプログラミングおよび消去方法
JP2004022027A (ja) * 2002-06-13 2004-01-22 Matsushita Electric Ind Co Ltd 半導体記憶装置および半導体記憶装置の書き込み方法
JP2004023044A (ja) * 2002-06-20 2004-01-22 Toshiba Corp 不揮発性半導体記憶装置
JP2005063516A (ja) * 2003-08-08 2005-03-10 Sharp Corp 不揮発性半導体記憶装置の書き込み方法
JP2005216466A (ja) * 2004-01-21 2005-08-11 Sharp Corp 不揮発性半導体記憶装置

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US3553947A (en) 1968-08-12 1971-01-12 Root Mfg Co Inc Grass catcher for lawnmowers
US3820312A (en) 1969-11-24 1974-06-28 Scott & Sons Co O Grass catcher
US3822536A (en) 1973-05-24 1974-07-09 H Leader Grass catcher
JPS62190420U (cg-RX-API-DMAC7.html) 1986-05-24 1987-12-03
US6198662B1 (en) 1999-06-24 2001-03-06 Amic Technology, Inc. Circuit and method for pre-erasing/erasing flash memory array
US7076610B2 (en) * 2000-11-22 2006-07-11 Integrated Device Technology, Inc. FIFO memory devices having multi-port cache memory arrays therein that support hidden EDC latency and bus matching and methods of operating same
US6738289B2 (en) 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
KR100390959B1 (ko) * 2001-06-29 2003-07-12 주식회사 하이닉스반도체 센싱회로를 이용한 멀티레벨 플래시 메모리 프로그램/리드방법
US6741502B1 (en) * 2001-09-17 2004-05-25 Sandisk Corporation Background operation for memory cells
CN1188909C (zh) * 2002-02-25 2005-02-09 力旺电子股份有限公司 一种非易失性存储单元的编程及擦除方法
US6649453B1 (en) * 2002-08-29 2003-11-18 Micron Technology, Inc. Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation
KR100496866B1 (ko) * 2002-12-05 2005-06-22 삼성전자주식회사 미프로그램된 셀들 및 과프로그램된 셀들 없이 균일한문턱 전압 분포를 갖는 플레쉬 메모리 장치 및 그프로그램 검증 방법
US6882567B1 (en) * 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
US7209983B2 (en) * 2003-07-03 2007-04-24 Integrated Device Technology, Inc. Sequential flow-control and FIFO memory devices that are depth expandable in standard mode operation
US7093047B2 (en) * 2003-07-03 2006-08-15 Integrated Device Technology, Inc. Integrated circuit memory devices having clock signal arbitration circuits therein and methods of performing clock signal arbitration

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02126498A (ja) * 1988-07-08 1990-05-15 Hitachi Ltd 不揮発性半導体記憶装置
JPH0773685A (ja) * 1993-09-06 1995-03-17 Hitachi Ltd 半導体不揮発性記憶装置
JPH07169284A (ja) * 1993-12-13 1995-07-04 Toshiba Corp 不揮発性半導体記憶装置
JPH10302486A (ja) * 1996-08-30 1998-11-13 Sanyo Electric Co Ltd 半導体記憶装置
JPH10228784A (ja) * 1997-02-12 1998-08-25 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2002109891A (ja) * 2000-09-28 2002-04-12 Hitachi Ltd 不揮発性メモリと不揮発性メモリの書き込み方法
JP2002319289A (ja) * 2000-12-07 2002-10-31 Saifun Semiconductors Ltd Ｎｒｏｍアレイの基準セルのプログラミングおよび消去方法
JP2004022027A (ja) * 2002-06-13 2004-01-22 Matsushita Electric Ind Co Ltd 半導体記憶装置および半導体記憶装置の書き込み方法
JP2004023044A (ja) * 2002-06-20 2004-01-22 Toshiba Corp 不揮発性半導体記憶装置
JP2005063516A (ja) * 2003-08-08 2005-03-10 Sharp Corp 不揮発性半導体記憶装置の書き込み方法
JP2005216466A (ja) * 2004-01-21 2005-08-11 Sharp Corp 不揮発性半導体記憶装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204342A (ja) * 2010-03-24 2011-10-13 Ememory Technology Inc チャネル熱電子注入プログラミング方法及び関連する装置
US8369154B2 (en) 2010-03-24 2013-02-05 Ememory Technology Inc. Channel hot electron injection programming method and related device
US8467245B2 (en) 2010-03-24 2013-06-18 Ememory Technology Inc. Non-volatile memory device with program current clamp and related method

Also Published As

Publication number Publication date
CN101243520A (zh) 2008-08-13
CN101243520B (zh) 2010-12-15
US20070058434A1 (en) 2007-03-15
TW200713281A (en) 2007-04-01
US7342833B2 (en) 2008-03-11
WO2007024565A2 (en) 2007-03-01
WO2007024565A3 (en) 2007-11-22

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