TW200713281A - Nonvolatile memory cell programming - Google Patents

Nonvolatile memory cell programming

Info

Publication number
TW200713281A
TW200713281A TW095129481A TW95129481A TW200713281A TW 200713281 A TW200713281 A TW 200713281A TW 095129481 A TW095129481 A TW 095129481A TW 95129481 A TW95129481 A TW 95129481A TW 200713281 A TW200713281 A TW 200713281A
Authority
TW
Taiwan
Prior art keywords
programming
vertical field
electrons
gate dielectric
memory cell
Prior art date
Application number
TW095129481A
Other languages
English (en)
Chinese (zh)
Inventor
Craig A Cavins
Laureen H Parker
Martin L Niset
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200713281A publication Critical patent/TW200713281A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
TW095129481A 2005-08-23 2006-08-11 Nonvolatile memory cell programming TW200713281A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/209,294 US7342833B2 (en) 2005-08-23 2005-08-23 Nonvolatile memory cell programming

Publications (1)

Publication Number Publication Date
TW200713281A true TW200713281A (en) 2007-04-01

Family

ID=37772152

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095129481A TW200713281A (en) 2005-08-23 2006-08-11 Nonvolatile memory cell programming

Country Status (5)

Country Link
US (1) US7342833B2 (cg-RX-API-DMAC7.html)
JP (1) JP2009506472A (cg-RX-API-DMAC7.html)
CN (1) CN101243520B (cg-RX-API-DMAC7.html)
TW (1) TW200713281A (cg-RX-API-DMAC7.html)
WO (1) WO2007024565A2 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI407448B (zh) * 2007-10-16 2013-09-01 Spansion Llc 在寫入操作期間用於金屬位元線之來自高電壓驅動器之經控制的斜波率於記憶體之應用

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KR100771520B1 (ko) * 2006-10-23 2007-10-30 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
JP5384012B2 (ja) * 2008-01-24 2014-01-08 ローム株式会社 Ｅｅｐｒｏｍおよびそれを用いた電子機器
US7764550B2 (en) * 2008-11-25 2010-07-27 Freescale Semiconductor, Inc. Method of programming a non-volatile memory
US7929343B2 (en) * 2009-04-07 2011-04-19 Micron Technology, Inc. Methods, devices, and systems relating to memory cells having a floating body
US8369154B2 (en) * 2010-03-24 2013-02-05 Ememory Technology Inc. Channel hot electron injection programming method and related device
US8467245B2 (en) 2010-03-24 2013-06-18 Ememory Technology Inc. Non-volatile memory device with program current clamp and related method
CN103165188A (zh) * 2011-12-09 2013-06-19 中国科学院微电子研究所 一种多位非挥发存储单元及阵列的编程方法
CN112638199A (zh) * 2019-06-19 2021-04-09 法鲁克系统股份有限公司 包含熔岩石的头发造型装置
KR20230105274A (ko) * 2022-01-03 2023-07-11 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 제조 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI407448B (zh) * 2007-10-16 2013-09-01 Spansion Llc 在寫入操作期間用於金屬位元線之來自高電壓驅動器之經控制的斜波率於記憶體之應用

Also Published As

Publication number Publication date
CN101243520A (zh) 2008-08-13
CN101243520B (zh) 2010-12-15
US20070058434A1 (en) 2007-03-15
JP2009506472A (ja) 2009-02-12
US7342833B2 (en) 2008-03-11
WO2007024565A2 (en) 2007-03-01
WO2007024565A3 (en) 2007-11-22

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