JP2009506472A5 - - Google Patents
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- Publication number
- JP2009506472A5 JP2009506472A5 JP2008527982A JP2008527982A JP2009506472A5 JP 2009506472 A5 JP2009506472 A5 JP 2009506472A5 JP 2008527982 A JP2008527982 A JP 2008527982A JP 2008527982 A JP2008527982 A JP 2008527982A JP 2009506472 A5 JP2009506472 A5 JP 2009506472A5
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- JP
- Japan
- Prior art keywords
- voltage
- applying
- source
- programming
- duration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/209,294 US7342833B2 (en) | 2005-08-23 | 2005-08-23 | Nonvolatile memory cell programming |
| PCT/US2006/031840 WO2007024565A2 (en) | 2005-08-23 | 2006-08-16 | Nonvolatile memory cell programming |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009506472A JP2009506472A (ja) | 2009-02-12 |
| JP2009506472A5 true JP2009506472A5 (cg-RX-API-DMAC7.html) | 2009-09-24 |
Family
ID=37772152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008527982A Pending JP2009506472A (ja) | 2005-08-23 | 2006-08-16 | 不揮発性メモリ・セルのプログラミング |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7342833B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2009506472A (cg-RX-API-DMAC7.html) |
| CN (1) | CN101243520B (cg-RX-API-DMAC7.html) |
| TW (1) | TW200713281A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2007024565A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100771520B1 (ko) * | 2006-10-23 | 2007-10-30 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| US7630250B2 (en) * | 2007-10-16 | 2009-12-08 | Spansion Llc | Controlled ramp rates for metal bitlines during write operations from high voltage driver for memory applications |
| JP5384012B2 (ja) * | 2008-01-24 | 2014-01-08 | ローム株式会社 | Ｅｅｐｒｏｍおよびそれを用いた電子機器 |
| US7764550B2 (en) * | 2008-11-25 | 2010-07-27 | Freescale Semiconductor, Inc. | Method of programming a non-volatile memory |
| US7929343B2 (en) * | 2009-04-07 | 2011-04-19 | Micron Technology, Inc. | Methods, devices, and systems relating to memory cells having a floating body |
| US8369154B2 (en) * | 2010-03-24 | 2013-02-05 | Ememory Technology Inc. | Channel hot electron injection programming method and related device |
| US8467245B2 (en) | 2010-03-24 | 2013-06-18 | Ememory Technology Inc. | Non-volatile memory device with program current clamp and related method |
| CN103165188A (zh) * | 2011-12-09 | 2013-06-19 | 中国科学院微电子研究所 | 一种多位非挥发存储单元及阵列的编程方法 |
| CN112638199A (zh) * | 2019-06-19 | 2021-04-09 | 法鲁克系统股份有限公司 | 包含熔岩石的头发造型装置 |
| KR20230105274A (ko) * | 2022-01-03 | 2023-07-11 | 에스케이하이닉스 주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3553947A (en) | 1968-08-12 | 1971-01-12 | Root Mfg Co Inc | Grass catcher for lawnmowers |
| US3820312A (en) | 1969-11-24 | 1974-06-28 | Scott & Sons Co O | Grass catcher |
| US3822536A (en) | 1973-05-24 | 1974-07-09 | H Leader | Grass catcher |
| JPS62190420U (cg-RX-API-DMAC7.html) | 1986-05-24 | 1987-12-03 | ||
| JPH02126498A (ja) * | 1988-07-08 | 1990-05-15 | Hitachi Ltd | 不揮発性半導体記憶装置 |
| JP3626221B2 (ja) * | 1993-12-13 | 2005-03-02 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JPH0773685A (ja) * | 1993-09-06 | 1995-03-17 | Hitachi Ltd | 半導体不揮発性記憶装置 |
| JPH10302486A (ja) * | 1996-08-30 | 1998-11-13 | Sanyo Electric Co Ltd | 半導体記憶装置 |
| JPH10228784A (ja) * | 1997-02-12 | 1998-08-25 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| US6198662B1 (en) | 1999-06-24 | 2001-03-06 | Amic Technology, Inc. | Circuit and method for pre-erasing/erasing flash memory array |
| US6490204B2 (en) * | 2000-05-04 | 2002-12-03 | Saifun Semiconductors Ltd. | Programming and erasing methods for a reference cell of an NROM array |
| JP3922516B2 (ja) * | 2000-09-28 | 2007-05-30 | 株式会社ルネサステクノロジ | 不揮発性メモリと不揮発性メモリの書き込み方法 |
| US7076610B2 (en) * | 2000-11-22 | 2006-07-11 | Integrated Device Technology, Inc. | FIFO memory devices having multi-port cache memory arrays therein that support hidden EDC latency and bus matching and methods of operating same |
| US6738289B2 (en) | 2001-02-26 | 2004-05-18 | Sandisk Corporation | Non-volatile memory with improved programming and method therefor |
| KR100390959B1 (ko) * | 2001-06-29 | 2003-07-12 | 주식회사 하이닉스반도체 | 센싱회로를 이용한 멀티레벨 플래시 메모리 프로그램/리드방법 |
| US6741502B1 (en) * | 2001-09-17 | 2004-05-25 | Sandisk Corporation | Background operation for memory cells |
| CN1188909C (zh) * | 2002-02-25 | 2005-02-09 | 力旺电子股份有限公司 | 一种非易失性存储单元的编程及擦除方法 |
| JP4200420B2 (ja) * | 2002-06-13 | 2008-12-24 | パナソニック株式会社 | 半導体記憶装置および半導体記憶装置の書き込み方法 |
| JP2004023044A (ja) * | 2002-06-20 | 2004-01-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
| US6649453B1 (en) * | 2002-08-29 | 2003-11-18 | Micron Technology, Inc. | Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation |
| KR100496866B1 (ko) * | 2002-12-05 | 2005-06-22 | 삼성전자주식회사 | 미프로그램된 셀들 및 과프로그램된 셀들 없이 균일한문턱 전압 분포를 갖는 플레쉬 메모리 장치 및 그프로그램 검증 방법 |
| US6882567B1 (en) * | 2002-12-06 | 2005-04-19 | Multi Level Memory Technology | Parallel programming of multiple-bit-per-cell memory cells on a continuous word line |
| US7209983B2 (en) * | 2003-07-03 | 2007-04-24 | Integrated Device Technology, Inc. | Sequential flow-control and FIFO memory devices that are depth expandable in standard mode operation |
| US7093047B2 (en) * | 2003-07-03 | 2006-08-15 | Integrated Device Technology, Inc. | Integrated circuit memory devices having clock signal arbitration circuits therein and methods of performing clock signal arbitration |
| JP4245437B2 (ja) * | 2003-08-08 | 2009-03-25 | シャープ株式会社 | 不揮発性半導体記憶装置の書き込み方法 |
| US6937520B2 (en) * | 2004-01-21 | 2005-08-30 | Tsuyoshi Ono | Nonvolatile semiconductor memory device |
-
2005
- 2005-08-23 US US11/209,294 patent/US7342833B2/en not_active Expired - Lifetime
-
2006
- 2006-08-11 TW TW095129481A patent/TW200713281A/zh unknown
- 2006-08-16 WO PCT/US2006/031840 patent/WO2007024565A2/en not_active Ceased
- 2006-08-16 CN CN2006800305639A patent/CN101243520B/zh not_active Expired - Fee Related
- 2006-08-16 JP JP2008527982A patent/JP2009506472A/ja active Pending