CN101188231B - 半导体器件和半导体晶片及其制造方法 - Google Patents

半导体器件和半导体晶片及其制造方法 Download PDF

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Publication number
CN101188231B
CN101188231B CN200710199542.6A CN200710199542A CN101188231B CN 101188231 B CN101188231 B CN 101188231B CN 200710199542 A CN200710199542 A CN 200710199542A CN 101188231 B CN101188231 B CN 101188231B
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China
Prior art keywords
semiconductor chip
semiconductor
wafer
circuit formation
protective film
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Expired - Lifetime
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CN200710199542.6A
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English (en)
Chinese (zh)
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CN101188231A (zh
Inventor
栗田洋一郎
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Desella Advanced Technology Co
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NEC Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Pressure Sensors (AREA)
CN200710199542.6A 2004-06-30 2005-06-29 半导体器件和半导体晶片及其制造方法 Expired - Lifetime CN101188231B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004-194667 2004-06-30
JP2004194667A JP4383274B2 (ja) 2004-06-30 2004-06-30 半導体装置および半導体ウエハの製造方法
JP2004194667 2004-06-30

Related Parent Applications (1)

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CNB2005100810989A Division CN100463172C (zh) 2004-06-30 2005-06-29 半导体器件和半导体晶片及其制造方法

Publications (2)

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CN101188231A CN101188231A (zh) 2008-05-28
CN101188231B true CN101188231B (zh) 2010-04-14

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CN200710199542.6A Expired - Lifetime CN101188231B (zh) 2004-06-30 2005-06-29 半导体器件和半导体晶片及其制造方法
CNB2005100810989A Expired - Lifetime CN100463172C (zh) 2004-06-30 2005-06-29 半导体器件和半导体晶片及其制造方法

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US (2) US7663244B2 (enExample)
JP (1) JP4383274B2 (enExample)
CN (2) CN101188231B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4383274B2 (ja) * 2004-06-30 2009-12-16 Ｎｅｃエレクトロニクス株式会社 半導体装置および半導体ウエハの製造方法
KR100809696B1 (ko) * 2006-08-08 2008-03-06 삼성전자주식회사 사이즈가 상이한 복수의 반도체 칩이 적층된 멀티 칩패키지 및 그 제조방법
JP5489512B2 (ja) * 2009-04-06 2014-05-14 キヤノン株式会社 半導体装置の製造方法
WO2010116694A2 (en) 2009-04-06 2010-10-14 Canon Kabushiki Kaisha Method of manufacturing semiconductor device
JP5409084B2 (ja) 2009-04-06 2014-02-05 キヤノン株式会社 半導体装置の製造方法
JP5353628B2 (ja) * 2009-10-15 2013-11-27 住友ベークライト株式会社 半導体装置の製造方法
JP2011108770A (ja) * 2009-11-16 2011-06-02 Sumitomo Bakelite Co Ltd 半導体装置の製造方法、半導体装置、および電子部品の製造方法、電子部品
JP5601079B2 (ja) * 2010-08-09 2014-10-08 三菱電機株式会社 半導体装置、半導体回路基板および半導体回路基板の製造方法
JP5717502B2 (ja) * 2011-03-30 2015-05-13 信越ポリマー株式会社 半導体チップ用保持具及びその使用方法
US8916421B2 (en) 2011-08-31 2014-12-23 Freescale Semiconductor, Inc. Semiconductor device packaging having pre-encapsulation through via formation using lead frames with attached signal conduits
US9142502B2 (en) * 2011-08-31 2015-09-22 Zhiwei Gong Semiconductor device packaging having pre-encapsulation through via formation using drop-in signal conduits
JP6157356B2 (ja) * 2011-11-10 2017-07-05 シチズン時計株式会社 光集積デバイス
US8597983B2 (en) 2011-11-18 2013-12-03 Freescale Semiconductor, Inc. Semiconductor device packaging having substrate with pre-encapsulation through via formation
WO2015046334A1 (ja) 2013-09-27 2015-04-02 株式会社ダイセル 半導体素子三次元実装用充填材
JP2020013911A (ja) * 2018-07-19 2020-01-23 東京エレクトロン株式会社 基板処理システム及び基板処理方法
KR102498148B1 (ko) * 2018-09-20 2023-02-08 삼성전자주식회사 반도체 장치의 제조 방법
CN114121845A (zh) * 2020-09-01 2022-03-01 Jmj韩国株式会社 半导体封装

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087719A (en) * 1997-04-25 2000-07-11 Kabushiki Kaisha Toshiba Chip for multi-chip semiconductor device and method of manufacturing the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3770631B2 (ja) 1994-10-24 2006-04-26 株式会社ルネサステクノロジ 半導体装置の製造方法
US5861666A (en) * 1995-08-30 1999-01-19 Tessera, Inc. Stacked chip assembly
JP3563604B2 (ja) * 1998-07-29 2004-09-08 株式会社東芝 マルチチップ半導体装置及びメモリカード
JP2000114206A (ja) 1998-10-05 2000-04-21 Sony Corp 半導体パッケージの製造方法
JP2000208702A (ja) 1999-01-14 2000-07-28 Hitachi Ltd 半導体装置およびその製造方法
US6307270B1 (en) * 1999-08-05 2001-10-23 Ming-Tung Shen Electro-optic device and method for manufacturing the same
JP2001250913A (ja) 1999-12-28 2001-09-14 Mitsumasa Koyanagi ３次元半導体集積回路装置及びその製造方法
JP4137328B2 (ja) 1999-12-28 2008-08-20 光正 小柳 ３次元半導体集積回路装置の製造方法
US6559539B2 (en) * 2001-01-24 2003-05-06 Hsiu Wen Tu Stacked package structure of image sensor
US6627983B2 (en) * 2001-01-24 2003-09-30 Hsiu Wen Tu Stacked package structure of image sensor
SG111919A1 (en) * 2001-08-29 2005-06-29 Micron Technology Inc Packaged microelectronic devices and methods of forming same
US6611052B2 (en) * 2001-11-16 2003-08-26 Micron Technology, Inc. Wafer level stackable semiconductor package
TWI234253B (en) 2002-05-31 2005-06-11 Fujitsu Ltd Semiconductor device and manufacturing method thereof
JP2004140037A (ja) * 2002-10-15 2004-05-13 Oki Electric Ind Co Ltd 半導体装置、及びその製造方法
JP3908146B2 (ja) 2002-10-28 2007-04-25 シャープ株式会社 半導体装置及び積層型半導体装置
JP3566957B2 (ja) * 2002-12-24 2004-09-15 沖電気工業株式会社 半導体装置及びその製造方法
JP4383274B2 (ja) * 2004-06-30 2009-12-16 Ｎｅｃエレクトロニクス株式会社 半導体装置および半導体ウエハの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087719A (en) * 1997-04-25 2000-07-11 Kabushiki Kaisha Toshiba Chip for multi-chip semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JP2006019429A (ja) 2006-01-19
US20060014364A1 (en) 2006-01-19
CN101188231A (zh) 2008-05-28
US7812457B2 (en) 2010-10-12
JP4383274B2 (ja) 2009-12-16
CN100463172C (zh) 2009-02-18
US20070278698A1 (en) 2007-12-06
CN1716601A (zh) 2006-01-04
US7663244B2 (en) 2010-02-16

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