CN101118961B - 负极和二次电池 - Google Patents
负极和二次电池 Download PDFInfo
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- CN101118961B CN101118961B CN2007101434934A CN200710143493A CN101118961B CN 101118961 B CN101118961 B CN 101118961B CN 2007101434934 A CN2007101434934 A CN 2007101434934A CN 200710143493 A CN200710143493 A CN 200710143493A CN 101118961 B CN101118961 B CN 101118961B
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- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | Rz(μm) | 充电时厚度的增加率(%) | 容量保持率(%) | |
比较例1-1 | Si | 汽相沉积 | 没有突起部 | 1 | 25.3 | 15 |
比较例1-2 | Si | 汽相沉积 | 没有突起部 | 2 | 24.6 | 19 |
比较例1-3 | Si | 汽相沉积 | 随机的突起部 | 3 | 23.2 | 36 |
比较例1-4 | Si | 汽相沉积 | 随机的突起部 | 4 | 22.6 | 40 |
比较例1-5 | Si | 汽相沉积 | 随机的突起部 | 5 | 24.1 | 42 |
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | Rz(μm) | 充电时厚度的增加率(%) | 容量保持率(%) | |
比较例1-6 | Si | 汽相沉积 | 排列方向垂直于卷轴方向 | 1 | 22.1 | 41 |
比较例1-7 | Si | 汽相沉积 | 排列方向垂直于卷轴方向 | 1.5 | 21.9 | 43 |
比较例1-8 | Si | 汽相沉积 | 排列方向垂直于卷轴方向 | 3 | 21.8 | 45 |
比较例1-9 | Si | 汽相沉积 | 排列方向垂直于卷轴方向 | 4 | 22.0 | 47 |
比较例1-10 | Si | 汽相沉积 | 排列方向垂直于卷轴方向 | 5 | 21.1 | 48 |
比较例1-11 | Si | 汽相沉积 | 排列方向垂直于卷轴方向 | 5.5 | 20.9 | 42 |
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | Rz(μm) | 充电时厚度的增加率(%) | 容量保持率(%) | |
实例1-1 | Si | 汽相沉积 | 排列方向对卷轴方向成45度 | 1.5 | 11.5 | 52 |
实例1-2 | Si | 汽相沉积 | 排列方向对卷轴方向成45度 | 3 | 11.6 | 55 |
实例1-3 | Si | 汽相沉积 | 排列方向对卷轴方向成45度 | 4 | 112 | 58 |
实例1-4 | Si | 汽相沉积 | 排列方向对卷轴方向成45度 | 5 | 11.0 | 57 |
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | Rz(μm) | 充电时厚度的增加率(%) | 容量保持率(%) | |
实例1-5 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 1 | 4.2 | 81 |
实例1-6 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 1.5 | 4.3 | 83 |
实例1-7 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 3 | 4.1 | 85 |
实例1-8 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 4 | 4.2 | 88 |
实例1-9 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 5 | 42 | 88 |
实例1-10 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 5.5 | 4.1 | 82 |
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | 充电时厚度的增加率(%) | 容量保持率(%) | 间距(μm) | |
比较例2 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 22.6 | 40 | 0 |
实例2-1 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 6.2 | 82 | 2.78 |
实例1-8 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 42 | 88 | 2.27 |
实例2-2 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 4.0 | 86 | 1.72 |
实例2-3 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 3.9 | 81 | 1.49 |
实例2-4 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 3.8 | 80 | 13 |
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | Rz(μm) | 充电时厚度的增加率(%) | 容量保持率(%) | |
比较例3-1 | Si | 涂覆 | 随机的突起部 | 4 | 18.5 | 41 |
比较例3-2 | Si | 涂覆 | 排列方向垂直于卷轴方向 | 4 | 17.6 | 49 |
实例3 | Si | 涂覆 | 排列方向平行于卷轴方向 | 4 | 25 | 82 |
比较例3-3 | C | 涂覆 | 随机的突起部 | 4 | 0.7 | 89 |
比较例3-4 | C | 涂覆 | 排列方向垂直于卷轴方向 | 4 | 0.7 | 90 |
比较例3-5 | C | 涂覆 | 排列方向平行于卷轴方向 | 4 | 0.7 | 89 |
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | Rz(μm) | 充电时厚度的增加率(%) | 容量保持率(%) | |
比较例4-1 | Si | 溅射 | 随机的突起部 | 4 | 24.5 | 40 |
比较例4-2 | Si | 溅射 | 排列方向垂直于卷轴方向 | 4 | 24.3 | 47 |
实例4 | Si | 溅射 | 排列方向平行于卷轴方向 | 4 | 43 | 84 |
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | Rz(μm) | 充电时厚度的增加率(%) | 容量保持率(%) | |
比较例5-1 | Si | CVD | 随机的突起部 | 4 | 24.1 | 39 |
比较例5-2 | Si | CVD | 排列方向垂直于卷轴方向 | 4 | 22.6 | 51 |
实例5 | Si | CVD | 排列方向平行于卷轴方向 | 4 | 4.0 | 88 |
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | 充电时厚度的增加率(%) | 容量保持率(%) | 外包装件 | |
实例1-8 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 42 | 88 | 层压 |
实例6-1 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 1.1 | 90.3 | 铝 |
实例6-2 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 0.2 | 92.1 | 铁 |
实例6-3 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 0.2 | 82 | 管状 |
比较例6-1 | Si | 汽相沉积 | 排列方向垂直于卷轴方向 | 8.1 | 41 | 管状 |
比较例6-2 | C | 汽相沉积 | 排列方向垂直于卷轴方向 | 0.07 | 91 | 管状 |
比较例6-3 | C | 汽相沉积 | 排列方向平行于卷轴方向 | 0.07 | 90 | 管状 |
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | 充电时厚度的增加率(%) | 容量保持率(%) | 电解质 | |
实例1-8 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 4.2 | 88 | DFEC∶EC∶DEC |
实例7 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 4.3 | 55 | EC∶DEC |
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | 充电时厚度的增加率(%) | 容量保持率(%) | 氧浓度(at%) | |
实例8-1 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 5.3 | 79 | 2 |
实例8-2 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 4.3 | 84 | 3 |
实例1-8 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 42 | 88 | 5 |
实例8-3 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 4.0 | 89 | 10 |
实例8-4 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 3.9 | 89 | 20 |
实例8-5 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 3.8 | 88.5 | 30 |
实例8-6 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 3.6 | 88 | 40 |
实例8-7 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 3.6 | 81 | 50 |
活性物质 | 膜形成方法 | 铜箔的表面结构以及突起部列的排列方向和卷轴方向之间的关系 | 充电时厚度的增加率(%) | 容量保持率(%) | 氧化物带数量 | |
实例1-8 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 4.2 | 88 | 0层 |
实例9-1 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 4.1 | 88.2 | 1层 |
实例9-2 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 4.0 | 89 | 2层 |
实例9-3 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 3.9 | 89.2 | 3层 |
实例9-4 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 3.8 | 89.6 | 4层 |
实例9-5 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 3.6 | 90.1 | 5层 |
实例9-6 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 35 | 91 | 6层 |
实例9-7 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 33 | 90.5 | 7层 |
实例9-8 | Si | 汽相沉积 | 排列方向平行于卷轴方向 | 3.1 | 91.1 | 8层 |
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