CN101085901A - 用于铜膜平面化的钝化化学机械抛光组合物 - Google Patents

用于铜膜平面化的钝化化学机械抛光组合物 Download PDF

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Publication number
CN101085901A
CN101085901A CNA2007101065751A CN200710106575A CN101085901A CN 101085901 A CN101085901 A CN 101085901A CN A2007101065751 A CNA2007101065751 A CN A2007101065751A CN 200710106575 A CN200710106575 A CN 200710106575A CN 101085901 A CN101085901 A CN 101085901A
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China
Prior art keywords
chemical
mechanical polishing
polishing compositions
copper
composition
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Pending
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CNA2007101065751A
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English (en)
Chinese (zh)
Inventor
刘俊
彼得·弗热施卡
大卫·伯恩哈德
麦肯齐·金
迈克尔·达西罗
卡尔·博格斯
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Advanced Technology Materials Inc
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Advanced Technology Materials Inc
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Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of CN101085901A publication Critical patent/CN101085901A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C23F11/141—Amines; Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CNA2007101065751A 2002-12-10 2003-12-02 用于铜膜平面化的钝化化学机械抛光组合物 Pending CN101085901A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/315,641 US7300601B2 (en) 2002-12-10 2002-12-10 Passivative chemical mechanical polishing composition for copper film planarization
US10/315,641 2002-12-10

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2003801085064A Division CN1329467C (zh) 2002-12-10 2003-12-02 用于铜膜平面化的钝化化学机械抛光组合物

Publications (1)

Publication Number Publication Date
CN101085901A true CN101085901A (zh) 2007-12-12

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Family Applications (2)

Application Number Title Priority Date Filing Date
CNA2007101065751A Pending CN101085901A (zh) 2002-12-10 2003-12-02 用于铜膜平面化的钝化化学机械抛光组合物
CNB2003801085064A Expired - Lifetime CN1329467C (zh) 2002-12-10 2003-12-02 用于铜膜平面化的钝化化学机械抛光组合物

Family Applications After (1)

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Country Status (6)

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US (5) US7300601B2 (US07300601-20071127-C00003.png)
EP (1) EP1570015A4 (US07300601-20071127-C00003.png)
CN (2) CN101085901A (US07300601-20071127-C00003.png)
AU (1) AU2003297590A1 (US07300601-20071127-C00003.png)
TW (1) TWI338711B (US07300601-20071127-C00003.png)
WO (1) WO2004053008A2 (US07300601-20071127-C00003.png)

Cited By (5)

* Cited by examiner, † Cited by third party
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CN105793471A (zh) * 2013-12-02 2016-07-20 艺康美国股份有限公司 基于四唑的腐蚀抑制剂
WO2017214995A1 (zh) * 2016-06-17 2017-12-21 深圳市恒兆智科技有限公司 抛光剂、铜件及其抛光处理方法
CN110256968A (zh) * 2019-05-29 2019-09-20 湖南皓志科技股份有限公司 一种用于铜抛光的氧化铝抛光液及其制备方法
CN110892093A (zh) * 2017-05-25 2020-03-17 圣戈本陶瓷及塑料股份有限公司 用于陶瓷材料的化学机械抛光的氧化流体
CN114258424A (zh) * 2019-06-13 2022-03-29 富士胶片电子材料美国有限公司 蚀刻组合物

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