CN100593869C - 平板显示器和平板显示器的制造方法 - Google Patents
平板显示器和平板显示器的制造方法 Download PDFInfo
- Publication number
- CN100593869C CN100593869C CN200610099327A CN200610099327A CN100593869C CN 100593869 C CN100593869 C CN 100593869C CN 200610099327 A CN200610099327 A CN 200610099327A CN 200610099327 A CN200610099327 A CN 200610099327A CN 100593869 C CN100593869 C CN 100593869C
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- China
- Prior art keywords
- self
- drain electrode
- source electrode
- assembled monolayer
- semiconductor layer
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- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 79
- 239000010410 layer Substances 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000002094 self assembled monolayer Substances 0.000 claims description 81
- 239000013545 self-assembled monolayer Substances 0.000 claims description 81
- 238000000034 method Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 27
- 239000012212 insulator Substances 0.000 claims description 18
- 125000003118 aryl group Chemical group 0.000 claims description 12
- 239000004033 plastic Substances 0.000 claims description 11
- 229920003023 plastic Polymers 0.000 claims description 11
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 150000001491 aromatic compounds Chemical class 0.000 claims description 5
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 4
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 claims description 4
- 229920000123 polythiophene Polymers 0.000 claims description 4
- 229930192474 thiophene Natural products 0.000 claims description 4
- 150000001502 aryl halides Chemical class 0.000 claims description 3
- 125000004391 aryl sulfonyl group Chemical group 0.000 claims description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 3
- 238000001962 electrophoresis Methods 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 125000001188 haloalkyl group Chemical group 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- -1 halo naphthyl halide Chemical class 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 238000001338 self-assembly Methods 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 230000008569 process Effects 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 230000014509 gene expression Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000000068 chlorophenyl group Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001207 fluorophenyl group Chemical group 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
- H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050070111A KR101240656B1 (ko) | 2005-08-01 | 2005-08-01 | 평판표시장치와 평판표시장치의 제조방법 |
KR1020050070111 | 2005-08-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1909260A CN1909260A (zh) | 2007-02-07 |
CN100593869C true CN100593869C (zh) | 2010-03-10 |
Family
ID=37700293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610099327A Expired - Fee Related CN100593869C (zh) | 2005-08-01 | 2006-07-17 | 平板显示器和平板显示器的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7619245B2 (zh) |
JP (1) | JP4884120B2 (zh) |
KR (1) | KR101240656B1 (zh) |
CN (1) | CN100593869C (zh) |
TW (1) | TWI320603B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100708720B1 (ko) * | 2005-10-19 | 2007-04-17 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치 |
KR101151159B1 (ko) * | 2006-09-19 | 2012-06-01 | 삼성전자주식회사 | 포스페이트계 자기조립단분자막을 포함하는 유기 박막트랜지스터 및 그 제조방법 |
JP5151122B2 (ja) * | 2006-11-22 | 2013-02-27 | ソニー株式会社 | 電極被覆材料、電極構造体、及び、半導体装置 |
US8030648B2 (en) * | 2007-02-23 | 2011-10-04 | Konica Minolta Holdings, Inc. | Organic thin film transistor and organic thin film transistor manufacturing process |
JP2008243911A (ja) * | 2007-03-26 | 2008-10-09 | Nippon Hoso Kyokai <Nhk> | 有機薄膜トランジスタ及びディスプレイ |
KR101379616B1 (ko) * | 2007-07-31 | 2014-03-31 | 삼성전자주식회사 | 계면특성이 향상된 유기박막트랜지스터 및 그의 제조방법 |
US8309952B2 (en) * | 2007-08-28 | 2012-11-13 | Toppan Printing Co., Ltd. | Thin film transistor and method for manufacturing the same |
JP2009081397A (ja) * | 2007-09-27 | 2009-04-16 | Fuji Electric Device Technology Co Ltd | 半導体装置および半導体装置の製造方法 |
US20090098680A1 (en) * | 2007-10-15 | 2009-04-16 | E.I. Du Pont De Nemours And Company | Backplane structures for solution processed electronic devices |
US8772774B2 (en) | 2007-12-14 | 2014-07-08 | E. I. Du Pont De Nemours And Company | Backplane structures for organic light emitting electronic devices using a TFT substrate |
JP5135073B2 (ja) * | 2008-06-18 | 2013-01-30 | 出光興産株式会社 | 有機薄膜トランジスタ |
KR20100075061A (ko) * | 2008-12-24 | 2010-07-02 | 전자부품연구원 | 유기박막 트랜지스터 및 그 제조방법 |
WO2010146645A1 (ja) * | 2009-06-15 | 2010-12-23 | パイオニア株式会社 | 半導体装置および半導体装置の製造方法 |
KR101900653B1 (ko) | 2009-07-10 | 2018-09-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR101894333B1 (ko) * | 2011-12-30 | 2018-09-04 | 엘지디스플레이 주식회사 | 유기 발광 소자 및 이의 제조 방법 |
TWI513005B (zh) * | 2013-09-13 | 2015-12-11 | Au Optronics Corp | 薄膜電晶體及其製造方法 |
TWI569327B (zh) | 2015-07-03 | 2017-02-01 | 友達光電股份有限公司 | 薄膜電晶體與其製作方法 |
CN106711330B (zh) * | 2016-11-17 | 2019-03-26 | 武汉华星光电技术有限公司 | 一种有机薄膜晶体管及其制造方法 |
GB2567897A (en) * | 2017-10-31 | 2019-05-01 | Flexenable Ltd | Source-drain conductors for organic TFTS |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100238795B1 (ko) | 1997-03-03 | 2000-01-15 | 구본준 | 액정 표시 장치의 구조 및 그 액정 표시 장치의 제조 방법 |
JP2000269504A (ja) * | 1999-03-16 | 2000-09-29 | Hitachi Ltd | 半導体装置、その製造方法及び液晶表示装置 |
US6335539B1 (en) | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
KR100399283B1 (ko) | 2001-05-02 | 2003-09-26 | 권영수 | 고성능 유기 박막 트랜지스트의 소자 구조 및 그 제조방법. |
JP2004055654A (ja) | 2002-07-17 | 2004-02-19 | Pioneer Electronic Corp | 有機半導体素子 |
US6821811B2 (en) * | 2002-08-02 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor |
JP4618990B2 (ja) * | 2002-08-02 | 2011-01-26 | 株式会社半導体エネルギー研究所 | 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置 |
US6664576B1 (en) | 2002-09-25 | 2003-12-16 | International Business Machines Corporation | Polymer thin-film transistor with contact etch stops |
CA2499951C (en) * | 2002-10-15 | 2013-05-28 | Peijun Jiang | Multiple catalyst system for olefin polymerization and polymers produced therefrom |
JP4356309B2 (ja) * | 2002-12-03 | 2009-11-04 | セイコーエプソン株式会社 | トランジスタ、集積回路、電気光学装置、電子機器 |
KR100925460B1 (ko) * | 2002-12-05 | 2009-11-06 | 삼성전자주식회사 | 유기 박막 트랜지스터 기판 및 그 제조 방법 |
JP2003248240A (ja) * | 2002-12-16 | 2003-09-05 | Sharp Corp | アクティブマトリクス基板 |
KR100572926B1 (ko) | 2002-12-26 | 2006-04-24 | 삼성전자주식회사 | 폴리티에닐티아졸 유도체 및 이를 이용한 유기박막트랜지스터 |
JP4366116B2 (ja) | 2003-05-20 | 2009-11-18 | キヤノン株式会社 | 電界効果型有機トランジスタ |
KR100995451B1 (ko) | 2003-07-03 | 2010-11-18 | 삼성전자주식회사 | 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터 |
JP4228204B2 (ja) * | 2003-07-07 | 2009-02-25 | セイコーエプソン株式会社 | 有機トランジスタの製造方法 |
KR100973811B1 (ko) * | 2003-08-28 | 2010-08-03 | 삼성전자주식회사 | 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법 |
JP4550389B2 (ja) * | 2003-09-12 | 2010-09-22 | 株式会社日立製作所 | 半導体装置 |
JP2004346082A (ja) * | 2003-09-16 | 2004-12-09 | Tetsuya Nishio | 第3級アミン化合物およびそれを使用した有機半導体装置 |
JP4415653B2 (ja) * | 2003-11-19 | 2010-02-17 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
US7554121B2 (en) * | 2003-12-26 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor device |
US7709290B2 (en) * | 2004-06-30 | 2010-05-04 | Hewlett-Packard Development Company, L.P. | Method of forming a self-assembled molecular layer |
-
2005
- 2005-08-01 KR KR1020050070111A patent/KR101240656B1/ko active IP Right Grant
-
2006
- 2006-06-07 TW TW095120229A patent/TWI320603B/zh not_active IP Right Cessation
- 2006-07-17 CN CN200610099327A patent/CN100593869C/zh not_active Expired - Fee Related
- 2006-07-31 JP JP2006207516A patent/JP4884120B2/ja not_active Expired - Fee Related
- 2006-08-01 US US11/497,690 patent/US7619245B2/en not_active Expired - Fee Related
-
2008
- 2008-12-01 US US12/325,951 patent/US7682886B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7619245B2 (en) | 2009-11-17 |
KR20070015656A (ko) | 2007-02-06 |
US20070063195A1 (en) | 2007-03-22 |
CN1909260A (zh) | 2007-02-07 |
US7682886B2 (en) | 2010-03-23 |
US20090111211A1 (en) | 2009-04-30 |
JP4884120B2 (ja) | 2012-02-29 |
KR101240656B1 (ko) | 2013-03-08 |
TWI320603B (en) | 2010-02-11 |
JP2007043160A (ja) | 2007-02-15 |
TW200707750A (en) | 2007-02-16 |
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