TWI320603B - Flat panel display and manufacturing method of flat panel display - Google Patents

Flat panel display and manufacturing method of flat panel display

Info

Publication number
TWI320603B
TWI320603B TW095120229A TW95120229A TWI320603B TW I320603 B TWI320603 B TW I320603B TW 095120229 A TW095120229 A TW 095120229A TW 95120229 A TW95120229 A TW 95120229A TW I320603 B TWI320603 B TW I320603B
Authority
TW
Taiwan
Prior art keywords
flat panel
panel display
manufacturing
flat
display
Prior art date
Application number
TW095120229A
Other languages
English (en)
Other versions
TW200707750A (en
Inventor
Bo-Sung Kim
Joon-Hak Oh
Yong-Uk Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200707750A publication Critical patent/TW200707750A/zh
Application granted granted Critical
Publication of TWI320603B publication Critical patent/TWI320603B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
TW095120229A 2005-08-01 2006-06-07 Flat panel display and manufacturing method of flat panel display TWI320603B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050070111A KR101240656B1 (ko) 2005-08-01 2005-08-01 평판표시장치와 평판표시장치의 제조방법

Publications (2)

Publication Number Publication Date
TW200707750A TW200707750A (en) 2007-02-16
TWI320603B true TWI320603B (en) 2010-02-11

Family

ID=37700293

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095120229A TWI320603B (en) 2005-08-01 2006-06-07 Flat panel display and manufacturing method of flat panel display

Country Status (5)

Country Link
US (2) US7619245B2 (zh)
JP (1) JP4884120B2 (zh)
KR (1) KR101240656B1 (zh)
CN (1) CN100593869C (zh)
TW (1) TWI320603B (zh)

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KR101151159B1 (ko) * 2006-09-19 2012-06-01 삼성전자주식회사 포스페이트계 자기조립단분자막을 포함하는 유기 박막트랜지스터 및 그 제조방법
JP5151122B2 (ja) * 2006-11-22 2013-02-27 ソニー株式会社 電極被覆材料、電極構造体、及び、半導体装置
US8030648B2 (en) * 2007-02-23 2011-10-04 Konica Minolta Holdings, Inc. Organic thin film transistor and organic thin film transistor manufacturing process
JP2008243911A (ja) * 2007-03-26 2008-10-09 Nippon Hoso Kyokai <Nhk> 有機薄膜トランジスタ及びディスプレイ
KR101379616B1 (ko) * 2007-07-31 2014-03-31 삼성전자주식회사 계면특성이 향상된 유기박막트랜지스터 및 그의 제조방법
US8309952B2 (en) * 2007-08-28 2012-11-13 Toppan Printing Co., Ltd. Thin film transistor and method for manufacturing the same
JP2009081397A (ja) * 2007-09-27 2009-04-16 Fuji Electric Device Technology Co Ltd 半導体装置および半導体装置の製造方法
US20090098680A1 (en) * 2007-10-15 2009-04-16 E.I. Du Pont De Nemours And Company Backplane structures for solution processed electronic devices
US8772774B2 (en) 2007-12-14 2014-07-08 E. I. Du Pont De Nemours And Company Backplane structures for organic light emitting electronic devices using a TFT substrate
JP5135073B2 (ja) * 2008-06-18 2013-01-30 出光興産株式会社 有機薄膜トランジスタ
KR20100075061A (ko) * 2008-12-24 2010-07-02 전자부품연구원 유기박막 트랜지스터 및 그 제조방법
WO2010146645A1 (ja) * 2009-06-15 2010-12-23 パイオニア株式会社 半導体装置および半導体装置の製造方法
KR101900653B1 (ko) 2009-07-10 2018-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101894333B1 (ko) * 2011-12-30 2018-09-04 엘지디스플레이 주식회사 유기 발광 소자 및 이의 제조 방법
TWI513005B (zh) * 2013-09-13 2015-12-11 Au Optronics Corp 薄膜電晶體及其製造方法
TWI569327B (zh) 2015-07-03 2017-02-01 友達光電股份有限公司 薄膜電晶體與其製作方法
CN106711330B (zh) * 2016-11-17 2019-03-26 武汉华星光电技术有限公司 一种有机薄膜晶体管及其制造方法
GB2567897A (en) * 2017-10-31 2019-05-01 Flexenable Ltd Source-drain conductors for organic TFTS

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JP2000269504A (ja) * 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
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JP4366116B2 (ja) 2003-05-20 2009-11-18 キヤノン株式会社 電界効果型有機トランジスタ
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JP4228204B2 (ja) * 2003-07-07 2009-02-25 セイコーエプソン株式会社 有機トランジスタの製造方法
KR100973811B1 (ko) * 2003-08-28 2010-08-03 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
JP4550389B2 (ja) * 2003-09-12 2010-09-22 株式会社日立製作所 半導体装置
JP2004346082A (ja) * 2003-09-16 2004-12-09 Tetsuya Nishio 第３級アミン化合物およびそれを使用した有機半導体装置
JP4415653B2 (ja) * 2003-11-19 2010-02-17 セイコーエプソン株式会社 薄膜トランジスタの製造方法
US7554121B2 (en) * 2003-12-26 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Organic semiconductor device
US7709290B2 (en) * 2004-06-30 2010-05-04 Hewlett-Packard Development Company, L.P. Method of forming a self-assembled molecular layer

Also Published As

Publication number Publication date
US7619245B2 (en) 2009-11-17
KR20070015656A (ko) 2007-02-06
US20070063195A1 (en) 2007-03-22
CN1909260A (zh) 2007-02-07
US7682886B2 (en) 2010-03-23
US20090111211A1 (en) 2009-04-30
JP4884120B2 (ja) 2012-02-29
KR101240656B1 (ko) 2013-03-08
JP2007043160A (ja) 2007-02-15
TW200707750A (en) 2007-02-16
CN100593869C (zh) 2010-03-10

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