CN100588309C - 两层挠性基板 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 239000010949 copper Substances 0.000 claims abstract description 55
- 229910052802 copper Inorganic materials 0.000 claims abstract description 53
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000012212 insulator Substances 0.000 claims abstract description 32
- 230000003746 surface roughness Effects 0.000 claims abstract description 16
- 229920001721 polyimide Polymers 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims description 20
- 239000011230 binding agent Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 16
- 239000013078 crystal Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 230000002950 deficient Effects 0.000 description 7
- -1 sulphur class organic compound Chemical class 0.000 description 7
- 239000000654 additive Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229920001223 polyethylene glycol Polymers 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical group OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000003009 phosphonic acids Chemical class 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- VZCCTDLWCKUBGD-UHFFFAOYSA-N 8-[[4-(dimethylamino)phenyl]diazenyl]-10-phenylphenazin-10-ium-2-amine;chloride Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1N=NC1=CC=C(N=C2C(C=C(N)C=C2)=[N+]2C=3C=CC=CC=3)C2=C1 VZCCTDLWCKUBGD-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000001118 alkylidene group Chemical group 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- SRRKNRDXURUMPP-UHFFFAOYSA-N sodium disulfide Chemical compound [Na+].[Na+].[S-][S-] SRRKNRDXURUMPP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/206—Insulating
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K1/02—Details
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- H05K1/0393—Flexible materials
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
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- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
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Abstract
本发明的课题在于提供一种蚀刻特性、与抗蚀剂的粘合性优异，没有表面缺陷的两层挠性基板。通过提供下述两层挠性基板而解决了上述课题，即，一种两层挠性基板，是在绝缘体膜的一面或两面上，不使用粘结剂地设置有铜层的两层挠性基板，其特征在于，铜层的表面粗糙度(Ra)为0.10～0.25μm，并且铜层剖面中的距离绝缘体膜1μm处的铜的平均结晶粒径为0.8μm以下。作为绝缘体膜，优选聚酰亚胺膜。
Description
技术领域
本发明涉及两层挠性基板，更具体的说涉及在绝缘体膜上形成了铜层的两层挠性基板。
背景技术
作为为了制作挠性配线板而使用的基板，两层挠性基板被人们所关注。两层挠性基板是在绝缘体膜上不使用粘结剂而直接设置铜导体层而成的，其具有不但可以使基板自身的厚度很薄，而且还可以将被覆的铜导体层的厚度调节为任意的厚度的优点。在制作这样的两层挠性基板的情况下，一般是在绝缘体膜上形成基底金属层，在其上进行电镀铜。但是，这样获得的基底金属层中经常出现针孔，产生绝缘体膜露出部，在设置了薄膜的铜导体层的情况下，不能掩埋因针孔导致的露出部分，在铜导体层表面也产生针孔，成为产生配线缺陷的原因。作为解决该问题的方法，例如在专利文献1中记载了，在绝缘体膜上利用干式镀敷法制作基底金属层，接着在基底金属层上形成1次电镀铜被膜，然后实施碱溶液处理，然后，被覆无电镀铜被膜层，最后形成2次电镀铜被膜层的两层挠性基板的制造方法。但是在该方法中，工序复杂。
另外，最近伴随印刷配线板的高密度化、电路宽度的狭小化、多层化，逐渐要求可以实现精细图案化(fine patterning)的铜层。为了该精细图案化，需要蚀刻速度快，并且具有均一溶解性的铜层即蚀刻特性优异的铜层。
另外，在其上涂布抗蚀剂、进而镀敷来进行配线时，铜表面的光泽性高，因此有时出现抗蚀剂剥离，因此要求与抗蚀剂的粘合性优异的两层挠性基板。
专利文献1：特开平10-193505号公报
发明内容
本发明的课题在于提供蚀刻特性、与抗蚀剂的粘合性优异、没有表面缺陷的两层挠性基板。
本发明者们对两层挠性基板的蚀刻特性、与抗蚀剂的粘合性进行了深入的研究，结果发现，通过规定铜层的表面粗糙度(Ra)和剖面的结晶粒径的大小，可以形成蚀刻特性、与抗蚀剂的粘合性优异、没有表面缺陷的2层基板。
即，本发明是，
(1)一种两层挠性基板，是在绝缘体膜的一面或两面上，不使用粘结剂地设置了铜层的两层挠性基板，其特征在于，铜层的表面粗糙度(Ra)为0.10～0.25μm，并且铜层剖面中的距离绝缘体膜1μm处的铜的平均结晶粒径为0.8μm以下；
(2)如上述(1)所述的两层挠性基板，其特征在于，上述绝缘体膜是聚酰亚胺膜。
通过规定两层挠性基板的铜层的表面粗糙度(Ra)和剖面的铜的结晶粒径的大小，可以形成蚀刻特性以及与抗蚀剂的粘合性优异的两层挠性基板。
另外，该表面粗糙度，对精细线(fine line)的形成没有影响，没有表面缺陷，合格率提高。
附图说明
[图1]是求出蚀刻率的式子的说明图。
具体实施方式
本发明的两层挠性基板是在绝缘体膜上形成了铜层的基板，优选不但在绝缘体膜上形成基底金属层，而且通过电镀来形成规定的厚度的铜层。
作为本发明使用的绝缘体膜，可以列举出由聚酰亚胺树脂、聚酯树脂、酚树脂等的热固化性树脂、聚乙烯树脂等的热塑性树脂、聚酰胺等的缩聚物等的树脂的1种或2种以上的混合物形成的膜。优选聚酰亚胺膜、聚酯膜等，特别优选聚酰亚胺膜。作为聚酰亚胺膜，可以列举出各种聚酰亚胺膜、例如カプトン(東レデユポン制)、ユ一ピレツクス(宇部兴产制)等。
作为绝缘体膜，优选厚度10～50μm的膜。
在绝缘体膜上，可以通过蒸镀、溅射或镀敷等的公知的方法来形成由Ni、Cr、Co、Ti、Cu、Mo、Si、V等单独元素或混合体系等获得的基底金属层。
基底金属层的厚度优选为10～500nm。
本发明的两层挠性基板，是在本发明至此所阐述的形成有基底金属层的绝缘体膜上，通过惯用方法的电镀，形成镀铜层而成的基板。
此时，作为镀敷液，可以使用通常的酸性镀铜液，优选使用在硫酸铜水溶液中混合氯、非离子类表面活性剂、硫类有机化合物作为添加剂而成的水溶液，优选形成厚度3～30μm的铜层。
作为上述硫类有机化合物，优选具有下述通式(1)或(2)的结构式的化合物。
X-R1-(S)n-R2-Y (1)
R4-S-R3-SO3Z (2)
(通式(1)、(2)中，R1、R2和R3是碳原子数1～8的亚烷基，R4选自氢和下述基团，
X选自氢、磺酸基、膦酸基、磺酸或膦酸的碱金属盐基或铵盐基，Y选自磺酸基、膦酸基、磺酸或膦酸的碱金属盐基，Z是氢或碱金属，n为2或3)。
上述通式(1)所示的硫类有机化合物，可以列举如下，并优选使用。
H2O3P-(CH2)3-S-S-(CH2)3-PO3H2
HO3S-(CH2)4-S-S-(CH2)4-SO3H
HO3S-(CH2)3-S-S-(CH2)3-SO3H
NaO3S-(CH2)3-S-S-(CH2)3-SO3Na
HO3S-(CH2)2-S-S-(CH2)2-SO3H
CH3-S-S-CH2-SO3H
NaO3S-(CH2)3-S-S-S-(CH2)3-SO3Na
(CH3)3CH-S-S-(CH2)2-SO3H
另外，作为上述通式(2)所示的硫类有机化合物，例如列举如下，并优选使用。
HS-CH2CH2CH2-SO3Na
HS-CH2CH2-SO3Na
铜层的表面粗糙度(Ra)为0.10～0.25μm，优选0.12～0.24μm。
通过使表面粗糙度在上述范围(表面适度粗糙)，与阻焊剂的粘合性变得良好。另外，通过使表面粗糙度在上述范围内，可以使在表面为光泽面的情况下的成为缺陷的微小的突起、凹陷被粗糙掩饰，因此表面变得没有微小的缺陷，合格率提高。通过使表面粗糙度(Ra)在0.10～0.25μm的范围内，可以形成能够应对精细线的表面粗糙度。
铜层的表面粗糙度是通过通常的镀敷获得的，一般小于0.1μm或者超过0.25μm。在小于0.1μm的光泽品的情况下，是通过在上述镀敷液的添加剂中进而添加含氮化合物而获得的。另外，对于表面粗糙度超过0.25μm的铜层，是用硫酸铜水溶液(没有添加剂)获得的。在本发明中，通过使用在硫酸铜水溶液中添加氯、非离子类表面活性剂、硫类有机化合物而成的水溶液作为镀敷液，用缓慢提高电流密度的方法进行镀敷，可以使表面粗糙度处于上述范围。具体来说，优选例如使用分别含有0.1～1000ppm的非离子类表面活性剂、硫类有机化合物的上述镀敷液，使电流密度在0.1～50A/dm2的范围内，连续地或分2～10阶段左右来缓慢提高的方法。另外，镀敷温度优选20～70℃。通过用这样的方法进行镀敷，使得铜的结晶粒径越靠近绝缘体膜越小，随着与绝缘体膜距离的增加而逐渐增加。
另外，铜层的距离绝缘体膜1μm处的铜的平均结晶粒径为0.8μm以下，优选0.2～0.7μm。
在本发明中，铜层的铜的结晶平均粒径如上所述那样，越接近绝缘体膜表面，变得越小。因此，如果距离绝缘体膜1μm处的铜的平均结晶粒径为0.8μm以下，则在与绝缘体膜的距离小于1μm的位置，铜的平均结晶粒径更小。
为了形成精细图案，绝缘体膜附近的蚀刻特性是重要的，通过使铜层的从绝缘体膜开始到1μm为止的区间的铜的平均结晶粒径为0.8μm以下，可以实现精细图案化。粒径越小，蚀刻特性变得越良好。即，通过减小绝缘体膜附近的结晶粒径，可以使蚀刻变得容易，抑制侧蚀，提高蚀刻特性。
如果用利用通常的硫酸铜进行的光泽镀敷的方法来制作，则绝缘体膜附近的铜的结晶粒径超过0.8μm，但是如上所述那样通过改变添加剂的种类，控制电流密度、镀敷温度，可以使结晶粒径减小，使其为0.8μm以下。
距离绝缘体膜1μm处的铜的平均结晶粒径例如可以通过FIB切断后，用SIM进行观察，观察测定结晶的粒径来求出。
进而，本发明的两层挠性基板，即使使用一般的方法形成基底金属层，在基底金属层产生了针孔，也不会在铜导体层表面产生针孔，没有表面缺陷。对其详细原因虽然不清楚，但是推定是由于即使在基底金属层产生针孔，通过使铜层的距离绝缘体膜1μm处的铜的平均结晶粒径为0.8μm以下，也可以用铜掩埋针孔。
实施例
下面，通过实施例来对本发明进行说明，但是本发明不限于这些实施例。
实施例1～2、比较例1～3
用下述镀敷条件，在具有基底金属层的聚酰亚胺膜上进行电镀，制作约8μm的镀铜膜。添加剂及其添加量如表1所示。
液体容量：约800ml
阳极：铅电极
阴极：卷绕有聚酰亚胺膜的旋转电极
具有基底金属层的聚酰亚胺膜：是在厚度37.5μm的カプトンE(デユポン制)上以10nm溅射NiCr、以
溅射Cu进行成膜而获得的。
电流时间：1300As
电流密度：按照5→10→20→30A/dm2变化(各电流密度分别保持40秒)
流速：190r.p.m.
Cu：70g/L
H2SO4：60g/L
Cl：75ppm
依据JIS B0601，测定所获得的铜聚酰亚胺2层基板的表面粗糙度(Ra)(μm)(算术平均粗糙度)，求出距离聚酰亚胺膜1μm处的铜的平均结晶粒径，评价缺陷的个数、蚀刻特性、与抗蚀剂的粘合性。
平均结晶粒径：
平均结晶粒径是在通过FIB切断剖面后，用SIM进行观察，求出距离聚酰亚胺1μm的高度的部分(宽度10μm)的结晶粒径的平均值。结果如表1所示。
缺陷的个数：
缺陷的个数是通过目视求出铜层表面1dm2的缺陷数(微小的突起或凹陷数)。另外，结果示于表1。
蚀刻特性：
蚀刻特性是利用蚀刻率来评价的。蚀刻率是通过形成间距20μm的线，通过下示的计算式来计算的。
蚀刻率＝h/{(b-t)/2}(＝tanθ)
h、b、t如图1所示，h＝蚀刻的深度，b＝基板表面的蚀刻的宽度，t＝蚀刻底面的蚀刻的宽度。
结果示于表1。
与抗蚀剂的粘合性评价：
利用无电镀金蚀刻耐性来评价。在实施例1～2和比较例1～2中获得的基板上涂布市售的阻焊剂。在曝光、显影后固化，制作评价基板。使用市售的无电镀Ni液和无电镀金液，对该评价基板进行镀敷。对该镀敷后的评价基板，利用セロテ一プ(注册商标)进行剥离试验，对抗蚀剂的剥离性进行评价。使用了实施例1、2的基板，观察到抗蚀剂完全没有剥离，与此相对，使用了比较例1、2的基板，发现稍微剥离。
表1
| 添加剂 | 镀敷温度(℃) | 表面粗糙度(Ra)(μm) | 平均结晶粒径(μm) | 缺陷的个数 | 蚀刻率 | |
| 实施例1 | SPS(30ppm)PEG(50ppm) | 40 | 0.15 | 0.6 | 0 | 4.0 |
| 实施例2 | SPS(30ppm)PEG(50ppm) | 50 | 0.24 | 0.4 | 0 | 4.3 |
| 比较例1 | SPS(15ppm)PEG(50ppm)JGB(30ppm) | 50 | 0.09 | 1.6 | 5 | 2.4 |
| 比较例2 | SPS(30ppm)PEG(50ppm)JGB(30ppm) | 50 | 0.07 | 0.9 | 10 | 3.6 |
| 比较例3 | SPS(30ppm) | 50 | 0.26 | 未测定 | 0 | 1.6 |
SPS：双(3-磺基丙基)二硫化二钠
PEG：聚乙二醇
JGB：詹纳斯绿(Janus Green)B(含氮化合物)
由以上结果可知，本发明的铜聚酰亚胺2层基板的蚀刻特性、与抗蚀剂的粘合性优异，没有表面缺陷。
Claims (2)
1.一种两层挠性基板，是在绝缘体膜的一面或两面上不使用粘结剂地设置了铜层的两层挠性基板，其特征在于，上述铜层的表面粗糙度(Ra)为0.10～0.25μm，并且铜层剖面中的从绝缘体膜开始到1μm为止的区间的铜的平均结晶粒径为0.8μm以下。
2.根据权利要求1所述的两层挠性基板，其特征在于，上述绝缘体膜是聚酰亚胺膜。
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