CN100572602C - 金属膜的蚀刻液组合物 - Google Patents

金属膜的蚀刻液组合物 Download PDF

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Publication number
CN100572602C
CN100572602C CNB2004100983108A CN200410098310A CN100572602C CN 100572602 C CN100572602 C CN 100572602C CN B2004100983108 A CNB2004100983108 A CN B2004100983108A CN 200410098310 A CN200410098310 A CN 200410098310A CN 100572602 C CN100572602 C CN 100572602C
Authority
CN
China
Prior art keywords
etching
etching solution
metal film
nitric acid
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100983108A
Other languages
English (en)
Chinese (zh)
Other versions
CN1651608A (zh
Inventor
藤川和宏
田湖次广
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xinxie Sanyo Electronics Co ltd
Kanto Chemical Co Inc
Sanyo Electric Co Ltd
On Semiconductor Niigata Co Ltd
Original Assignee
Kanto Chemical Co Inc
Sanyo Electric Co Ltd
Sanyo Semiconductor Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Chemical Co Inc, Sanyo Electric Co Ltd, Sanyo Semiconductor Manufacturing Co Ltd filed Critical Kanto Chemical Co Inc
Publication of CN1651608A publication Critical patent/CN1651608A/zh
Application granted granted Critical
Publication of CN100572602C publication Critical patent/CN100572602C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB2004100983108A 2003-12-03 2004-12-03 金属膜的蚀刻液组合物 Expired - Fee Related CN100572602C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP404439/2003 2003-12-03
JP2003404439A JP4428995B2 (ja) 2003-12-03 2003-12-03 金属膜のエッチング液組成物

Publications (2)

Publication Number Publication Date
CN1651608A CN1651608A (zh) 2005-08-10
CN100572602C true CN100572602C (zh) 2009-12-23

Family

ID=34674849

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100983108A Expired - Fee Related CN100572602C (zh) 2003-12-03 2004-12-03 金属膜的蚀刻液组合物

Country Status (6)

Country Link
US (2) US20050136672A1 (https=)
JP (1) JP4428995B2 (https=)
KR (1) KR101127564B1 (https=)
CN (1) CN100572602C (https=)
SG (1) SG112086A1 (https=)
TW (1) TWI374949B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4428995B2 (ja) * 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物
KR100688533B1 (ko) * 2005-02-15 2007-03-02 삼성전자주식회사 공정산포,전압 및 온도에 덜민감한 저항-커패시터 발진회로
TW200833871A (en) * 2006-11-17 2008-08-16 Sachem Inc Selective metal wet etch composition and process
JP5363713B2 (ja) 2007-07-19 2013-12-11 三洋半導体製造株式会社 エッチング液組成物
US7790624B2 (en) * 2008-07-16 2010-09-07 Global Foundries Inc. Methods for removing a metal-comprising material from a semiconductor substrate
JP2010163661A (ja) * 2009-01-16 2010-07-29 Sanyo Handotai Seizo Kk エッチング液組成物
CN101792907A (zh) * 2010-04-01 2010-08-04 江阴市江化微电子材料有限公司 一种铝钼蚀刻液
KR102091541B1 (ko) * 2014-02-25 2020-03-20 동우 화인켐 주식회사 유기 발광 표시 장치의 제조 방법
CN104118871B (zh) * 2014-07-31 2017-02-15 无锡格菲电子薄膜科技有限公司 一种石墨烯生长衬底的复合刻蚀液及其刻蚀方法
KR102456079B1 (ko) * 2014-12-24 2022-11-21 삼성디스플레이 주식회사 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법
CN107587135A (zh) * 2016-07-08 2018-01-16 深圳新宙邦科技股份有限公司 一种钼铝钼蚀刻液
JP6751326B2 (ja) * 2016-09-16 2020-09-02 キオクシア株式会社 基板処理装置および半導体装置の製造方法
CN107286939A (zh) * 2017-06-19 2017-10-24 江阴润玛电子材料股份有限公司 一种半导体芯片用镍银腐蚀液

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JPS5832200B2 (ja) * 1982-03-15 1983-07-11 株式会社 ネオス 含フツ素界面活性剤およびその製法
JPS6156284A (ja) 1984-08-28 1986-03-20 Asahi Glass Co Ltd 金属のエツチング用組成物
SU1308647A1 (ru) 1985-07-10 1987-05-07 Предприятие П/Я А-1785 Состав защитной добавки " нтарь" дл эмульсионного травлени
JPH01301869A (ja) 1988-05-27 1989-12-06 Dai Ichi Kogyo Seiyaku Co Ltd ニッチング促進添加剤
JP2894717B2 (ja) 1989-03-15 1999-05-24 日産化学工業株式会社 低表面張力硫酸組成物
US4895617A (en) * 1989-05-04 1990-01-23 Olin Corporation Etchant solution for photoresist-patterned metal layers
JP2994119B2 (ja) * 1991-11-13 1999-12-27 サンスター株式会社 起泡性洗浄剤
JPH0641770A (ja) * 1992-07-27 1994-02-15 Daikin Ind Ltd シリコンウエハ表面の処理方法
JPH06122982A (ja) 1992-10-13 1994-05-06 Matsushita Electric Ind Co Ltd アルミニウムを主成分とする金属薄膜のエッチング液組成物
JP3355233B2 (ja) * 1993-08-31 2002-12-09 株式会社ネオス 含フッ素陰イオン界面活性剤
JPH07176525A (ja) 1993-12-21 1995-07-14 Casio Comput Co Ltd 低抵抗配線の形成方法
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JP2001077098A (ja) 1999-09-03 2001-03-23 Toshiba Corp エッチング液、及びこれを用いる薄膜パターンの製造方法
JP2001284308A (ja) * 2000-01-24 2001-10-12 Mitsubishi Chemicals Corp 表面に遷移金属又は遷移金属化合物を有する半導体デバイス用基板の洗浄液及び洗浄方法
US6136514A (en) * 2000-01-31 2000-10-24 Advanced Micro Devices, Inc. Resist developer saving system using material to reduce surface tension and wet resist surface
WO2002004514A2 (en) 2000-07-11 2002-01-17 Corixa Corporation Compositions and methods for the therapy and diagnosis of lung cancer
US6525009B2 (en) * 2000-12-07 2003-02-25 International Business Machines Corporation Polycarboxylates-based aqueous compositions for cleaning of screening apparatus
JP2003049285A (ja) 2001-08-08 2003-02-21 Mitsubishi Chemicals Corp エッチング方法およびエッチング液の定量分析方法ならびにエッチング液からリン酸を回収する方法
WO2003005115A1 (en) * 2001-07-06 2003-01-16 Samsung Electronics Co., Ltd. An etchant for a wire, a method for manufacturing the wire and a method for manufacturing a thin film transistor array panel including the method
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
JP2003127397A (ja) 2001-10-26 2003-05-08 Canon Inc 回路基板の製造方法
CN101058713B (zh) * 2001-10-31 2011-02-09 日立化成工业株式会社 研磨液及研磨方法
ITMI20020178A1 (it) 2002-02-01 2003-08-01 Ausimont Spa Uso di additivi fluorurati nell'etching o polishing di circuiti integrati
JP2004156070A (ja) * 2002-11-01 2004-06-03 Kanto Chem Co Inc 透明導電膜を含む積層膜のエッチング液組成物
JP4478383B2 (ja) * 2002-11-26 2010-06-09 関東化学株式会社 銀を主成分とする金属薄膜のエッチング液組成物
JP3870292B2 (ja) * 2002-12-10 2007-01-17 関東化学株式会社 エッチング液組成物とそれを用いた反射板の製造方法
JP4428995B2 (ja) 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物

Also Published As

Publication number Publication date
KR101127564B1 (ko) 2012-03-26
JP4428995B2 (ja) 2010-03-10
KR20050053493A (ko) 2005-06-08
TW200519228A (en) 2005-06-16
JP2005162893A (ja) 2005-06-23
US20050136672A1 (en) 2005-06-23
US8557711B2 (en) 2013-10-15
TWI374949B (en) 2012-10-21
US20090124091A1 (en) 2009-05-14
CN1651608A (zh) 2005-08-10
SG112086A1 (en) 2005-06-29

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SANYO ELECTRIC CO., LTD. NIIGATA SANYO ELECTRONICS

Free format text: FORMER OWNER: SANYO ELECTRIC CO., LTD. SANYO SEMICONDUCTOR MANUFACTURING CO., LTD.

C41 Transfer of patent application or patent right or utility model
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: Tokyo, Japan

Co-patentee after: Sanyo Electric Co.,Ltd.

Patentee after: Kanto Kagaku Kabushiki Kaisha

Co-patentee after: Sanyo Semiconductor Manufacturing Co.,Ltd.

Address before: Tokyo, Japan

Co-patentee before: Sanyo Electric Co.,Ltd.

Patentee before: Kanto Kagaku Kabushiki Kaisha

Co-patentee before: Xinxie Sanyo Electronics Co.,Ltd.

TR01 Transfer of patent right

Effective date of registration: 20110118

Address after: Tokyo, Japan

Co-patentee after: Sanyo Electric Co.,Ltd.

Patentee after: Kanto Kagaku Kabushiki Kaisha

Co-patentee after: Xinxie Sanyo Electronics Co.,Ltd.

Address before: Tokyo, Japan

Co-patentee before: Sanyo Electric Co.,Ltd.

Patentee before: Kanto Kagaku Kabushiki Kaisha

Co-patentee before: Sanyo Semiconductor Manufacturing Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091223

Termination date: 20151203

EXPY Termination of patent right or utility model