KR101127564B1 - 금속막의 에칭액 조성물 - Google Patents

금속막의 에칭액 조성물 Download PDF

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Publication number
KR101127564B1
KR101127564B1 KR1020040098312A KR20040098312A KR101127564B1 KR 101127564 B1 KR101127564 B1 KR 101127564B1 KR 1020040098312 A KR1020040098312 A KR 1020040098312A KR 20040098312 A KR20040098312 A KR 20040098312A KR 101127564 B1 KR101127564 B1 KR 101127564B1
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KR
South Korea
Prior art keywords
etching
metal film
etching solution
aluminum
nitric acid
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020040098312A
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English (en)
Korean (ko)
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KR20050053493A (ko
Inventor
카주히로 후지카와
쭈구히로 타고
Original Assignee
간토 가가꾸 가부시키가이샤
산요 이렉트릭 캄파니 리미티드
산요 한도타이 세이조우 가부시키가이샤
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Application filed by 간토 가가꾸 가부시키가이샤, 산요 이렉트릭 캄파니 리미티드, 산요 한도타이 세이조우 가부시키가이샤 filed Critical 간토 가가꾸 가부시키가이샤
Publication of KR20050053493A publication Critical patent/KR20050053493A/ko
Application granted granted Critical
Publication of KR101127564B1 publication Critical patent/KR101127564B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020040098312A 2003-12-03 2004-11-27 금속막의 에칭액 조성물 Expired - Fee Related KR101127564B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003404439A JP4428995B2 (ja) 2003-12-03 2003-12-03 金属膜のエッチング液組成物
JPJP-P-2003-00404439 2003-12-03

Publications (2)

Publication Number Publication Date
KR20050053493A KR20050053493A (ko) 2005-06-08
KR101127564B1 true KR101127564B1 (ko) 2012-03-26

Family

ID=34674849

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040098312A Expired - Fee Related KR101127564B1 (ko) 2003-12-03 2004-11-27 금속막의 에칭액 조성물

Country Status (6)

Country Link
US (2) US20050136672A1 (https=)
JP (1) JP4428995B2 (https=)
KR (1) KR101127564B1 (https=)
CN (1) CN100572602C (https=)
SG (1) SG112086A1 (https=)
TW (1) TWI374949B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4428995B2 (ja) * 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物
KR100688533B1 (ko) * 2005-02-15 2007-03-02 삼성전자주식회사 공정산포,전압 및 온도에 덜민감한 저항-커패시터 발진회로
TW200833871A (en) * 2006-11-17 2008-08-16 Sachem Inc Selective metal wet etch composition and process
JP5363713B2 (ja) 2007-07-19 2013-12-11 三洋半導体製造株式会社 エッチング液組成物
US7790624B2 (en) * 2008-07-16 2010-09-07 Global Foundries Inc. Methods for removing a metal-comprising material from a semiconductor substrate
JP2010163661A (ja) * 2009-01-16 2010-07-29 Sanyo Handotai Seizo Kk エッチング液組成物
CN101792907A (zh) * 2010-04-01 2010-08-04 江阴市江化微电子材料有限公司 一种铝钼蚀刻液
KR102091541B1 (ko) * 2014-02-25 2020-03-20 동우 화인켐 주식회사 유기 발광 표시 장치의 제조 방법
CN104118871B (zh) * 2014-07-31 2017-02-15 无锡格菲电子薄膜科技有限公司 一种石墨烯生长衬底的复合刻蚀液及其刻蚀方法
KR102456079B1 (ko) * 2014-12-24 2022-11-21 삼성디스플레이 주식회사 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법
CN107587135A (zh) * 2016-07-08 2018-01-16 深圳新宙邦科技股份有限公司 一种钼铝钼蚀刻液
JP6751326B2 (ja) * 2016-09-16 2020-09-02 キオクシア株式会社 基板処理装置および半導体装置の製造方法
CN107286939A (zh) * 2017-06-19 2017-10-24 江阴润玛电子材料股份有限公司 一种半导体芯片用镍银腐蚀液

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1121546A (ja) 1996-12-09 1999-01-26 Cabot Corp 銅系基板に有用な化学的・機械的研磨用スラリー

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JPS6156284A (ja) 1984-08-28 1986-03-20 Asahi Glass Co Ltd 金属のエツチング用組成物
SU1308647A1 (ru) 1985-07-10 1987-05-07 Предприятие П/Я А-1785 Состав защитной добавки " нтарь" дл эмульсионного травлени
JPH01301869A (ja) 1988-05-27 1989-12-06 Dai Ichi Kogyo Seiyaku Co Ltd ニッチング促進添加剤
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JPH06122982A (ja) 1992-10-13 1994-05-06 Matsushita Electric Ind Co Ltd アルミニウムを主成分とする金属薄膜のエッチング液組成物
JP3355233B2 (ja) * 1993-08-31 2002-12-09 株式会社ネオス 含フッ素陰イオン界面活性剤
JPH07176525A (ja) 1993-12-21 1995-07-14 Casio Comput Co Ltd 低抵抗配線の形成方法
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
JP2001077098A (ja) 1999-09-03 2001-03-23 Toshiba Corp エッチング液、及びこれを用いる薄膜パターンの製造方法
JP2001284308A (ja) * 2000-01-24 2001-10-12 Mitsubishi Chemicals Corp 表面に遷移金属又は遷移金属化合物を有する半導体デバイス用基板の洗浄液及び洗浄方法
US6136514A (en) * 2000-01-31 2000-10-24 Advanced Micro Devices, Inc. Resist developer saving system using material to reduce surface tension and wet resist surface
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JP2003049285A (ja) 2001-08-08 2003-02-21 Mitsubishi Chemicals Corp エッチング方法およびエッチング液の定量分析方法ならびにエッチング液からリン酸を回収する方法
WO2003005115A1 (en) * 2001-07-06 2003-01-16 Samsung Electronics Co., Ltd. An etchant for a wire, a method for manufacturing the wire and a method for manufacturing a thin film transistor array panel including the method
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ITMI20020178A1 (it) 2002-02-01 2003-08-01 Ausimont Spa Uso di additivi fluorurati nell'etching o polishing di circuiti integrati
JP2004156070A (ja) * 2002-11-01 2004-06-03 Kanto Chem Co Inc 透明導電膜を含む積層膜のエッチング液組成物
JP4478383B2 (ja) * 2002-11-26 2010-06-09 関東化学株式会社 銀を主成分とする金属薄膜のエッチング液組成物
JP3870292B2 (ja) * 2002-12-10 2007-01-17 関東化学株式会社 エッチング液組成物とそれを用いた反射板の製造方法
JP4428995B2 (ja) 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1121546A (ja) 1996-12-09 1999-01-26 Cabot Corp 銅系基板に有用な化学的・機械的研磨用スラリー

Also Published As

Publication number Publication date
JP4428995B2 (ja) 2010-03-10
KR20050053493A (ko) 2005-06-08
CN100572602C (zh) 2009-12-23
TW200519228A (en) 2005-06-16
JP2005162893A (ja) 2005-06-23
US20050136672A1 (en) 2005-06-23
US8557711B2 (en) 2013-10-15
TWI374949B (en) 2012-10-21
US20090124091A1 (en) 2009-05-14
CN1651608A (zh) 2005-08-10
SG112086A1 (en) 2005-06-29

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