CN100555570C - 形成多晶硅薄膜的方法及用该方法制造薄膜晶体管的方法 - Google Patents

形成多晶硅薄膜的方法及用该方法制造薄膜晶体管的方法 Download PDF

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Publication number
CN100555570C
CN100555570C CNB2006101038567A CN200610103856A CN100555570C CN 100555570 C CN100555570 C CN 100555570C CN B2006101038567 A CNB2006101038567 A CN B2006101038567A CN 200610103856 A CN200610103856 A CN 200610103856A CN 100555570 C CN100555570 C CN 100555570C
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laser beam
amorphous silicon
polysilicon
thin film
energy density
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Chinese (zh)
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CN1917146A (zh
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金东范
郑世镇
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
CNB2006101038567A 2005-08-19 2006-08-04 形成多晶硅薄膜的方法及用该方法制造薄膜晶体管的方法 Expired - Fee Related CN100555570C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050076347A KR101132404B1 (ko) 2005-08-19 2005-08-19 다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법
KR1020050076347 2005-08-19

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CN1917146A CN1917146A (zh) 2007-02-21
CN100555570C true CN100555570C (zh) 2009-10-28

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US (2) US7364992B2 (https=)
JP (1) JP4864596B2 (https=)
KR (1) KR101132404B1 (https=)
CN (1) CN100555570C (https=)
TW (1) TWI402989B (https=)

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CN102770939B (zh) * 2009-11-03 2015-12-02 纽约市哥伦比亚大学理事会 用于非周期性脉冲部分熔融膜处理的系统和方法
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
CN102651311B (zh) * 2011-12-20 2014-12-17 京东方科技集团股份有限公司 一种低温多晶硅薄膜的制备方法及低温多晶硅薄膜
TWI495091B (zh) * 2012-02-16 2015-08-01 Au Optronics Corp 陣列基板及多晶矽層的製作方法
KR102014167B1 (ko) * 2012-12-06 2019-10-22 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층의 제조 방법을 포함하는 유기 발광 표시 장치의 제조 방법, 및 그 제조 방법에 의해 제조된 유기 발광 표시 장치
KR20170041962A (ko) 2015-10-07 2017-04-18 삼성디스플레이 주식회사 박막 트랜지스터 표시판의 제조 방법 및 박막 트랜지스터 표시판
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Publication number Publication date
JP2007053364A (ja) 2007-03-01
CN1917146A (zh) 2007-02-21
JP4864596B2 (ja) 2012-02-01
US20070054477A1 (en) 2007-03-08
KR20070021747A (ko) 2007-02-23
US7364992B2 (en) 2008-04-29
US7985665B2 (en) 2011-07-26
TW200713598A (en) 2007-04-01
KR101132404B1 (ko) 2012-04-03
TWI402989B (zh) 2013-07-21
US20080213985A1 (en) 2008-09-04

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