CN100544006C - 固态成像器件及其制造方法 - Google Patents
固态成像器件及其制造方法 Download PDFInfo
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- CN100544006C CN100544006C CNB2004100559341A CN200410055934A CN100544006C CN 100544006 C CN100544006 C CN 100544006C CN B2004100559341 A CNB2004100559341 A CN B2004100559341A CN 200410055934 A CN200410055934 A CN 200410055934A CN 100544006 C CN100544006 C CN 100544006C
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Images
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
光接收表面与玻璃基片上表面之间的距离(mm) | 投映在CCD上的上表面中的疵点阴影密度(%) |
0.30.4 | 8.35.1 |
0.50.60.70.80.91.01.1 | 3.52.51.91.51.21.00.8 |
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003285133 | 2003-08-01 | ||
JP2003285133A JP4551638B2 (ja) | 2003-08-01 | 2003-08-01 | 固体撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1581501A CN1581501A (zh) | 2005-02-16 |
CN100544006C true CN100544006C (zh) | 2009-09-23 |
Family
ID=33535733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100559341A Expired - Fee Related CN100544006C (zh) | 2003-08-01 | 2004-07-30 | 固态成像器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7688382B2 (zh) |
EP (1) | EP1503420A3 (zh) |
JP (1) | JP4551638B2 (zh) |
KR (2) | KR100692446B1 (zh) |
CN (1) | CN100544006C (zh) |
Families Citing this family (49)
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EP1981084A3 (en) | 2003-12-18 | 2009-02-18 | Panasonic Corporation | Solid-state imaging device, its production method, camera with the solid-state imaging device and light-receiving chip |
DE102005016751B3 (de) * | 2005-04-11 | 2006-12-14 | Schott Ag | Verfahren zur Herstellung gehäuster elektronischer Bauelemente |
KR100681264B1 (ko) * | 2005-05-31 | 2007-02-09 | 전자부품연구원 | 전자소자 패키지 및 그의 제조 방법 |
US7408190B2 (en) * | 2005-07-05 | 2008-08-05 | Chunghwa Picture Tubes, Ltd. | Thin film transistor and method of forming the same |
EP2333609A3 (en) | 2005-07-05 | 2013-03-27 | Hitachi Chemical Company, Ltd. | Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part |
JP4486005B2 (ja) | 2005-08-03 | 2010-06-23 | パナソニック株式会社 | 半導体撮像装置およびその製造方法 |
JP4663450B2 (ja) * | 2005-08-29 | 2011-04-06 | パイオニア株式会社 | 光電集積回路装置の製造方法 |
JP4881597B2 (ja) * | 2005-09-22 | 2012-02-22 | 富士フイルム株式会社 | 固体撮像装置の切断方法 |
TWI289365B (en) * | 2005-09-29 | 2007-11-01 | Visera Technologies Co Ltd | Wafer scale image module |
JP4779726B2 (ja) * | 2005-11-16 | 2011-09-28 | 株式会社デンソー | 半導体チップの製造方法 |
JP2007139576A (ja) * | 2005-11-18 | 2007-06-07 | Denso Corp | 半導体力学量センサの製造方法 |
JP2007189032A (ja) * | 2006-01-12 | 2007-07-26 | Nippon Steel Chem Co Ltd | 中空封止型半導体装置の製造方法 |
JP4834412B2 (ja) * | 2006-02-03 | 2011-12-14 | 富士フイルム株式会社 | 固体撮像装置およびこれを用いた電子内視鏡 |
JP4951989B2 (ja) * | 2006-02-09 | 2012-06-13 | 富士通セミコンダクター株式会社 | 半導体装置 |
US20070236591A1 (en) * | 2006-04-11 | 2007-10-11 | Tam Samuel W | Method for mounting protective covers over image capture devices and devices manufactured thereby |
DE102006032047A1 (de) * | 2006-07-10 | 2008-01-24 | Schott Ag | Verfahren zur Herstellung optoelektronischer Bauelemente und damit hergestellte Erzeugnisse |
JP5080804B2 (ja) * | 2006-12-28 | 2012-11-21 | 富士フイルム株式会社 | 固体撮像装置の製造方法 |
US8456560B2 (en) | 2007-01-26 | 2013-06-04 | Digitaloptics Corporation | Wafer level camera module and method of manufacture |
JP4667408B2 (ja) * | 2007-02-23 | 2011-04-13 | 富士フイルム株式会社 | 裏面照射型固体撮像素子の製造方法 |
US8716850B2 (en) * | 2007-05-18 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2009065055A (ja) * | 2007-09-07 | 2009-03-26 | Fujifilm Corp | 固体撮像装置及び固体撮像装置の製造方法 |
JP2009086092A (ja) * | 2007-09-28 | 2009-04-23 | Aji Kk | 光学部品の製造方法及び撮影装置の製造方法 |
CN101419323A (zh) * | 2007-10-22 | 2009-04-29 | 鸿富锦精密工业(深圳)有限公司 | 微型相机模组及其制作方法 |
JP5207777B2 (ja) * | 2008-03-06 | 2013-06-12 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
JP5226348B2 (ja) * | 2008-03-13 | 2013-07-03 | オリンパス株式会社 | 固体撮像装置およびその製造方法 |
JP4966897B2 (ja) * | 2008-03-25 | 2012-07-04 | 株式会社フジクラ | 半導体パッケージの製造方法 |
US8522953B2 (en) | 2008-04-14 | 2013-09-03 | Hirata Corporation | Conveyer device |
JP5129013B2 (ja) * | 2008-04-25 | 2013-01-23 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP5198142B2 (ja) * | 2008-05-14 | 2013-05-15 | シャープ株式会社 | 電子素子モジュールの製造方法 |
JP5091066B2 (ja) * | 2008-09-11 | 2012-12-05 | 富士フイルム株式会社 | 固体撮像装置の製造方法 |
US9419032B2 (en) | 2009-08-14 | 2016-08-16 | Nanchang O-Film Optoelectronics Technology Ltd | Wafer level camera module with molded housing and method of manufacturing |
US8138062B2 (en) * | 2009-12-15 | 2012-03-20 | Freescale Semiconductor, Inc. | Electrical coupling of wafer structures |
JP2010135821A (ja) * | 2010-01-21 | 2010-06-17 | Panasonic Corp | 半導体撮像装置およびその製造方法 |
US8017439B2 (en) * | 2010-01-26 | 2011-09-13 | Texas Instruments Incorporated | Dual carrier for joining IC die or wafers to TSV wafers |
WO2011152010A1 (ja) * | 2010-06-02 | 2011-12-08 | シャープ株式会社 | 液晶表示装置 |
JP2012186309A (ja) * | 2011-03-04 | 2012-09-27 | Omron Corp | ウエハレベルパッケージの製造方法、及びウエハレベルパッケージ |
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- 2004-07-30 CN CNB2004100559341A patent/CN100544006C/zh not_active Expired - Fee Related
- 2004-08-02 EP EP04254637A patent/EP1503420A3/en not_active Withdrawn
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KR100692481B1 (ko) | 2007-03-12 |
CN1581501A (zh) | 2005-02-16 |
JP2005056999A (ja) | 2005-03-03 |
KR100692446B1 (ko) | 2007-03-09 |
EP1503420A2 (en) | 2005-02-02 |
KR20070009953A (ko) | 2007-01-19 |
US7688382B2 (en) | 2010-03-30 |
KR20050016021A (ko) | 2005-02-21 |
JP4551638B2 (ja) | 2010-09-29 |
EP1503420A3 (en) | 2006-07-12 |
US20050024519A1 (en) | 2005-02-03 |
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