JP5080804B2 - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
- Publication number
- JP5080804B2 JP5080804B2 JP2006355824A JP2006355824A JP5080804B2 JP 5080804 B2 JP5080804 B2 JP 5080804B2 JP 2006355824 A JP2006355824 A JP 2006355824A JP 2006355824 A JP2006355824 A JP 2006355824A JP 5080804 B2 JP5080804 B2 JP 5080804B2
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state imaging
- imaging device
- self
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 88
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 123
- 230000001681 protective effect Effects 0.000 claims description 39
- 125000006850 spacer group Chemical group 0.000 claims description 36
- 239000011521 glass Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 description 18
- 230000001070 adhesive effect Effects 0.000 description 18
- 239000006059 cover glass Substances 0.000 description 8
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 5
- 230000003749 cleanliness Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000005297 pyrex Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001050985 Disco Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Description
請求項1によれば、自己剥離性両面テープを加熱することにより自己剥離させる際に、90度前後の低温で剥離する性質を備えた自己剥離性両面テープが使用される。これにより、高温で加熱した際に透光性基板と固体撮像素子ウェーハとの熱膨張率の違いから生じる、接合基板の反りによる剥がれ、破断等のスペーサの破壊が防止される。
請求項2に記載の発明は、請求項1に記載の発明において、前記支持体は、ガラス、樹脂、または金属により形成される板状部材であることを特徴としている。
請求項2によれば、支持体は透明、もしくは断熱性が低い性質のいずれかを備えたガラス、樹脂、または金属により形成される板状部材が用いられる。これにより、扱いやすく、容易に透光性基板の剛性を高めることを可能とし、透光性基板の湾曲を防ぎ、搬送性を良くする。
透光性基板10としては、8インチ、厚み300μmの「パイレックス(登録商標)ガラス」を使用する。透光性基板10には高さ50μmのスペーサ5が形成される。
Claims (4)
- 固体撮像素子ウェーハと、前記固体撮像素子ウェーハ上に形成された固体撮像素子を囲むように一方の面にスペーサが形成され、前記スペーサが形成された面の該スペーサの間に溝が形成される透光性基板とを接合して接合基板とした後、個々の前記固体撮像素子に対応するように前記接合基板を分割することによって製造される固体撮像装置の製造方法において、
前記固体撮像素子ウェーハと前記透光性基板とを接合する前に、前記透光性基板の溝が形成された面とは反対側の面へ、支持体を接合させ、
前記支持体は、少なくとも一方の面が加熱により自己剥離する自己剥離性両面テープにより前記透光性基板と接合され、
前記自己剥離性両面テープを加熱することにより自己剥離させる際に、前記固体撮像素子ウェーハと前記透光性基板との熱膨張率の差により発生する反りにより、前記スペーサが前記固体撮像素子ウェーハ、もしくは前記透光性基板より剥離する温度、または前記スペーサが破断する温度よりも低い温度で加熱される固体撮像装置の製造方法。 - 前記支持体は、ガラス、樹脂、または金属により形成される板状部材である請求項1に記載の固体撮像装置の製造方法。
- 前記透光性基板の溝が形成された面とは反対側の面には、前記透光性基板の表面を保護する保護用テープが貼着され、該保護用テープ上に前記自己剥離性両面テープが貼着される請求項1又は2に記載の固体撮像装置の製造方法。
- 前記自己剥離性両面テープ、及び前記保護用テープには前記固体撮像素子ウェーハを撮像することが可能である開口部が設けられている請求項3に記載の固体撮像装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006355824A JP5080804B2 (ja) | 2006-12-28 | 2006-12-28 | 固体撮像装置の製造方法 |
EP07851105.2A EP2097926A4 (en) | 2006-12-28 | 2007-12-19 | METHOD FOR PRODUCING A SOLID-BODY IMAGER ELEMENT |
KR1020097013306A KR101385410B1 (ko) | 2006-12-28 | 2007-12-19 | 고체 촬상 디바이스의 제조 방법 |
US12/521,172 US20100003779A1 (en) | 2006-12-28 | 2007-12-19 | Method of producing solid-state imaging device |
CN2007800481349A CN101569012B (zh) | 2006-12-28 | 2007-12-19 | 制造固态成像装置的方法 |
PCT/JP2007/075045 WO2008081847A1 (en) | 2006-12-28 | 2007-12-19 | A method of producing solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006355824A JP5080804B2 (ja) | 2006-12-28 | 2006-12-28 | 固体撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008166585A JP2008166585A (ja) | 2008-07-17 |
JP5080804B2 true JP5080804B2 (ja) | 2012-11-21 |
Family
ID=39588529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006355824A Expired - Fee Related JP5080804B2 (ja) | 2006-12-28 | 2006-12-28 | 固体撮像装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100003779A1 (ja) |
EP (1) | EP2097926A4 (ja) |
JP (1) | JP5080804B2 (ja) |
KR (1) | KR101385410B1 (ja) |
CN (1) | CN101569012B (ja) |
WO (1) | WO2008081847A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5091066B2 (ja) * | 2008-09-11 | 2012-12-05 | 富士フイルム株式会社 | 固体撮像装置の製造方法 |
WO2010090188A1 (ja) * | 2009-02-04 | 2010-08-12 | セイコーインスツル株式会社 | 輻射センサおよびその製造方法 |
CN102237286B (zh) * | 2010-05-06 | 2014-08-06 | 万国半导体(开曼)股份有限公司 | 一种用于超薄晶圆工艺的管芯贴片方法 |
FR2968832A1 (fr) * | 2010-12-08 | 2012-06-15 | St Microelectronics Grenoble 2 | Procédé de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs |
CN102496622B (zh) * | 2011-11-25 | 2016-03-30 | 格科微电子(上海)有限公司 | 图像传感器芯片的封装方法以及摄像模组 |
CN102623471B (zh) * | 2012-03-27 | 2015-09-09 | 格科微电子(上海)有限公司 | 图像传感器的封装方法 |
US9287310B2 (en) * | 2012-04-18 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for glass removal in CMOS image sensors |
CN103560139B (zh) * | 2013-11-19 | 2016-04-13 | 苏州晶方半导体科技股份有限公司 | 影像传感器封装结构及其封装方法 |
CN104637967A (zh) * | 2015-02-13 | 2015-05-20 | 苏州晶方半导体科技股份有限公司 | 封装方法及封装结构 |
JP6883478B2 (ja) * | 2017-06-22 | 2021-06-09 | 東芝デバイス&ストレージ株式会社 | 半導体装置 |
CN114853325B (zh) * | 2022-06-06 | 2023-09-05 | 安徽光智科技有限公司 | 硫系玻璃的隔离粘接方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6803245B2 (en) * | 2001-09-28 | 2004-10-12 | Osram Opto Semiconductors Gmbh | Procedure for encapsulation of electronic devices |
JP4551638B2 (ja) * | 2003-08-01 | 2010-09-29 | 富士フイルム株式会社 | 固体撮像装置の製造方法 |
JP2006100762A (ja) * | 2004-09-06 | 2006-04-13 | Fuji Photo Film Co Ltd | 固体撮像装置の製造方法 |
EP1800340A4 (en) * | 2004-09-29 | 2011-03-16 | Fujifilm Corp | MULTILAYER BODY GRINDING METHOD AND SEMICONDUCTOR IMAGE DETECTION DEVICE MANUFACTURING METHOD |
JP2006100587A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 固体撮像装置の製造方法 |
JP2006147864A (ja) * | 2004-11-19 | 2006-06-08 | Fujikura Ltd | 半導体パッケージ及びその製造方法 |
JP2006186067A (ja) * | 2004-12-27 | 2006-07-13 | Shinko Electric Ind Co Ltd | フィルター付き撮像素子およびその製造方法 |
-
2006
- 2006-12-28 JP JP2006355824A patent/JP5080804B2/ja not_active Expired - Fee Related
-
2007
- 2007-12-19 CN CN2007800481349A patent/CN101569012B/zh not_active Expired - Fee Related
- 2007-12-19 EP EP07851105.2A patent/EP2097926A4/en not_active Withdrawn
- 2007-12-19 US US12/521,172 patent/US20100003779A1/en not_active Abandoned
- 2007-12-19 WO PCT/JP2007/075045 patent/WO2008081847A1/en active Application Filing
- 2007-12-19 KR KR1020097013306A patent/KR101385410B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2008081847A1 (en) | 2008-07-10 |
EP2097926A4 (en) | 2013-05-29 |
KR20090103895A (ko) | 2009-10-01 |
EP2097926A1 (en) | 2009-09-09 |
CN101569012A (zh) | 2009-10-28 |
US20100003779A1 (en) | 2010-01-07 |
JP2008166585A (ja) | 2008-07-17 |
CN101569012B (zh) | 2012-04-18 |
KR101385410B1 (ko) | 2014-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5080804B2 (ja) | 固体撮像装置の製造方法 | |
JP5091066B2 (ja) | 固体撮像装置の製造方法 | |
TWI404196B (zh) | 固體攝像元件模組之製造方法 | |
JP2007188909A (ja) | 固体撮像装置及びその製造方法 | |
JP2006228837A (ja) | 半導体装置及びその製造方法 | |
JP5497476B2 (ja) | 固体撮像装置の製造方法 | |
KR101317983B1 (ko) | 고체 촬상 장치를 절단하는 방법 | |
JP2003197885A (ja) | 光デバイス及びその製造方法、光モジュール、回路基板並びに電子機器 | |
JP2007234725A (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
US20120050590A1 (en) | Method of manufacturing optical sensor, optical sensor, and camera including optical sensor | |
JP2010165939A (ja) | 固体撮像装置及びその製造方法 | |
JP4871690B2 (ja) | 固体撮像装置の製造方法及び固体撮像装置 | |
JP2011187482A (ja) | 固体撮像装置、光学装置用モジュール、及び固体撮像装置の製造方法 | |
JP2005322745A (ja) | 半導体素子、半導体素子の製造方法、固体撮像素子、並びに固体撮像素子の製造方法 | |
JP2009081201A (ja) | 裏面照射型撮像装置の製造方法 | |
JP2004063782A (ja) | 固体撮像装置およびその製造方法 | |
JP2006196823A (ja) | 半導体素子の製造方法 | |
JP2010087081A (ja) | 固体撮像装置の製造方法 | |
JP2007273629A (ja) | 固体撮像装置の製造方法及び固体撮像装置 | |
JP2006049700A (ja) | 固体撮像装置の製造方法 | |
TWI549268B (zh) | 晶圓封裝方法 | |
JP2010087080A (ja) | 固体撮像装置の製造方法 | |
TWI364846B (en) | Package process | |
JP2008252127A (ja) | 固体撮像装置およびその製造方法 | |
JP2006080123A (ja) | 固体撮像装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090902 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120611 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120808 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120827 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120831 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150907 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |