JP6851773B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6851773B2 JP6851773B2 JP2016212797A JP2016212797A JP6851773B2 JP 6851773 B2 JP6851773 B2 JP 6851773B2 JP 2016212797 A JP2016212797 A JP 2016212797A JP 2016212797 A JP2016212797 A JP 2016212797A JP 6851773 B2 JP6851773 B2 JP 6851773B2
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Description
また、本発明の他の一実施形態に係る半導体装置は、第1の主面、第2の主面、内側側面及び外側側面を有する第1の基板であって、前記内側側面は前記第1の基板に設けられた貫通孔を囲い、前記外側側面は前記第1の基板の少なくとも一部を囲う、第1の基板と、前記第1の主面に形成された半導体素子と、前記第1の主面に形成され、前記半導体素子と前記第1の主面において接続された第1の電極と、前記第2の主面に形成された第2の電極と、前記第1の基板を貫通するように形成された前記貫通孔の中に設けられ、前記第1の電極と前記第2の電極とを接続する貫通電極と、前記第1の主面と向かい合うように前記第1の基板と接合された第2の基板と、前記第1の基板の前記外側側面に形成され、前記第2の電極と接続された第3の電極と、を有し、前記第1の電極は、前記第1の基板の前記外側側面に延在しており、前記第3の電極は、前記第1の電極及び前記第2の電極の双方と直接接続されていることを特徴とする。
図1は、本発明の第1の実施形態に係る半導体装置100の断面図である。半導体装置100は、例えば、CMOS(Complementary Metal Oxide Semiconductor)イメージセンサ等の固体撮像装置である。半導体装置100は、第1の基板である半導体基板101と第2の基板である支持基板103とが接着部材102により接合されたWLCSPの構造を有している。半導体装置100は、複数個をウエハにまとめて形成し、パッケージングの完了後に個片化する工法により製造される。図1には個片化後の状態の半導体装置100の断面が示されている。
図5は、本発明の第2の実施形態に係る半導体装置100aの断面図である。第2の実施形態では、以下の点が第1の実施形態と異なる。第1に、表面電極106aが半導体基板101の側面近傍にまで延在しており、側面電極112と直接接続されている。第2に、側面電極112の部分の導電体層109a、110aが、裏面電極113と半導体基板101の裏面上では直接接続されておらず、表面電極106a及び貫通電極114を介して裏面電極113と接続されている。これにより、本実施形態では、側面電極112と裏面電極113との間の配線の一部が半導体装置100aの内部に形成された表面電極106aを経由している。その他の点は第1の実施形態と同様であるため説明を省略する。
図7は、本発明の第3の実施形態に係る半導体装置100bの断面図である。第3の実施形態では、表面電極106bが半導体基板101の側面近傍にまで延在しており、側面電極112と直接接続されている点が第1の実施形態と異なる。これにより、側面電極112の部分の導電体層109b、110bを含む再配線層が裏面電極113と直接接続され、更に表面電極106b及び貫通電極114を介して裏面電極113と接続される構造となっている。言い換えると、側面電極112が表面電極106b及び裏面電極113の双方と直接接続されていることにより、側面電極112と裏面電極113の間の経路が二重に形成されている。その他の点は第1の実施形態と同様であるため説明を省略する。
101 半導体基板
102 接着部材
103 支持基板
104 キャビティ
105 半導体素子
106 表面電極
109、110 導体層
112 側面電極
113 裏面電極
114 貫通電極
Claims (12)
- 第1の主面、第2の主面、内側側面及び外側側面を有する第1の基板であって、前記内側側面は前記第1の基板に設けられた貫通孔を囲い、前記外側側面は前記第1の基板の少なくとも一部を囲う、第1の基板と、
前記第1の主面に形成された半導体素子と、
前記第1の主面に形成され、前記半導体素子と前記第1の主面において接続された第1の電極と、
前記第2の主面に形成された第2の電極と、
前記第1の基板を貫通するように形成された前記貫通孔の中に設けられ、前記第1の電極と前記第2の電極とを接続する貫通電極と、
前記第1の主面と向かい合うように前記第1の基板と接合された第2の基板と、
前記第1の基板の前記外側側面に形成され、前記第2の電極と接続された第3の電極と、を有し、
前記第1の電極は、前記第1の基板の前記外側側面に延在しており、
前記第3の電極は、前記第1の基板の前記外側側面において前記第1の電極と直接接続されており、かつ、前記第1の電極及び前記貫通電極を介して前記第2の電極と電気的に接続されている
ことを特徴とする半導体装置。 - 第1の主面、第2の主面、内側側面及び外側側面を有する第1の基板であって、前記内側側面は前記第1の基板に設けられた貫通孔を囲い、前記外側側面は前記第1の基板の少なくとも一部を囲う、第1の基板と、
前記第1の主面に形成された半導体素子と、
前記第1の主面に形成され、前記半導体素子と前記第1の主面において接続された第1の電極と、
前記第2の主面に形成された第2の電極と、
前記第1の基板を貫通するように形成された前記貫通孔の中に設けられ、前記第1の電極と前記第2の電極とを接続する貫通電極と、
前記第1の主面と向かい合うように前記第1の基板と接合された第2の基板と、
前記第1の基板の前記外側側面に形成され、前記第2の電極と接続された第3の電極と、を有し、
前記第1の電極は、前記第1の基板の前記外側側面に延在しており、
前記第3の電極は、前記第1の電極及び前記第2の電極の双方と直接接続されている
ことを特徴とする半導体装置。 - 前記第3の電極は、前記外側側面から前記第2の主面に延在し、前記第2の電極と直接接続されている
ことを特徴とする請求項2記載の半導体装置。 - 前記貫通電極は、前記第1の基板の前記内側側面に沿って延在するように形成されている
ことを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。 - 前記半導体素子は、固体撮像素子を含み、
前記第2の基板は、光透過性を有する
ことを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置。 - 前記第1の基板と前記第2の基板は、間にキャビティが形成されるように接合されており、
前記半導体素子は、上面視において、前記キャビティの内側に形成されている
ことを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。 - 前記第2の電極の少なくとも一部は、上面視において、前記キャビティの内側に形成されている
ことを特徴とする請求項6に記載の半導体装置。 - 前記第1の基板と前記第2の基板は、枠状に形成された接着部材により接合されており、
前記第1の基板、前記第2の基板及び前記接着部材に囲まれた領域が前記キャビティを画成することを特徴とする請求項6又は7記載の半導体装置。 - 前記第2の電極は、外部の素子との接続用の端子であり、
前記第3の電極は、電気特性の測定用の端子である
ことを特徴とする請求項1乃至8のいずれか1項に記載の半導体装置。 - 前記第1の基板は、前記第1の基板の前記外側側面に垂直な方向であって、前記第3の電極に対して第1の方向の側に存在し、前記第3の電極に対して前記第1の方向とは反対の第2の方向の側には存在しない
ことを特徴とする請求項1乃至9のいずれか1項に記載の半導体装置。 - 前記第3の電極は、前記半導体素子の検査に用いられる測定器の入力端子又は出力端子に対して接続可能に構成されている
ことを特徴とする請求項1乃至10のいずれか1項に記載の半導体装置。 - 請求項1乃至10のいずれか1項に記載の半導体装置を載置するための凹形状の載置部と、前記載置部に前記半導体装置を載置したときに前記第3の電極に接して前記半導体装置の間に電気的接続を形成する端子と、を有する測定器を用い、前記半導体装置を検査する工程を有する
ことを特徴とする半導体装置の製造方法。
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