CN100517761C - 源极区下面具有隐埋p型层的晶体管及其制造方法 - Google Patents

源极区下面具有隐埋p型层的晶体管及其制造方法 Download PDF

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Publication number
CN100517761C
CN100517761C CNB2003801044882A CN200380104488A CN100517761C CN 100517761 C CN100517761 C CN 100517761C CN B2003801044882 A CNB2003801044882 A CN B2003801044882A CN 200380104488 A CN200380104488 A CN 200380104488A CN 100517761 C CN100517761 C CN 100517761C
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grid
type
channel layer
conduction region
unit
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Expired - Lifetime
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CNB2003801044882A
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Chinese (zh)
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CN1717811A (zh
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S·斯里拉姆
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
CNB2003801044882A 2002-11-26 2003-10-02 源极区下面具有隐埋p型层的晶体管及其制造方法 Expired - Lifetime CN100517761C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/304,272 2002-11-26
US10/304,272 US6956239B2 (en) 2002-11-26 2002-11-26 Transistors having buried p-type layers beneath the source region

Publications (2)

Publication Number Publication Date
CN1717811A CN1717811A (zh) 2006-01-04
CN100517761C true CN100517761C (zh) 2009-07-22

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CNB2003801044882A Expired - Lifetime CN100517761C (zh) 2002-11-26 2003-10-02 源极区下面具有隐埋p型层的晶体管及其制造方法

Country Status (11)

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US (2) US6956239B2 (enExample)
EP (1) EP1565946B1 (enExample)
JP (2) JP2006507683A (enExample)
KR (1) KR20050086758A (enExample)
CN (1) CN100517761C (enExample)
AT (1) ATE508477T1 (enExample)
AU (1) AU2003277252A1 (enExample)
CA (1) CA2502485A1 (enExample)
DE (1) DE60337027D1 (enExample)
TW (1) TWI329927B (enExample)
WO (1) WO2004049454A1 (enExample)

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EP1565946B1 (en) 2011-05-04
US20040099888A1 (en) 2004-05-27
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