CN100452441C - 光传感器封装 - Google Patents

光传感器封装 Download PDF

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Publication number
CN100452441C
CN100452441C CNB038246333A CN03824633A CN100452441C CN 100452441 C CN100452441 C CN 100452441C CN B038246333 A CNB038246333 A CN B038246333A CN 03824633 A CN03824633 A CN 03824633A CN 100452441 C CN100452441 C CN 100452441C
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China
Prior art keywords
integrated circuit
image sensor
pad
sensor devices
effective coverage
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Expired - Fee Related
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CNB038246333A
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English (en)
Chinese (zh)
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CN1692501A (zh
Inventor
周伟煌
郑文汉
何伟强
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Tong Song Co ltd
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Freescale Semiconductor Inc
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Publication of CN1692501A publication Critical patent/CN1692501A/zh
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Publication of CN100452441C publication Critical patent/CN100452441C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNB038246333A 2002-10-29 2003-09-30 光传感器封装 Expired - Fee Related CN100452441C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/282,537 2002-10-29
US10/282,537 US6667543B1 (en) 2002-10-29 2002-10-29 Optical sensor package

Publications (2)

Publication Number Publication Date
CN1692501A CN1692501A (zh) 2005-11-02
CN100452441C true CN100452441C (zh) 2009-01-14

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CNB038246333A Expired - Fee Related CN100452441C (zh) 2002-10-29 2003-09-30 光传感器封装

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US (2) US6667543B1 (enExample)
JP (1) JP4705784B2 (enExample)
KR (1) KR101031394B1 (enExample)
CN (1) CN100452441C (enExample)
AU (1) AU2003275308A1 (enExample)
TW (1) TWI233685B (enExample)
WO (1) WO2004040660A1 (enExample)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7002241B1 (en) 2003-02-12 2006-02-21 National Semiconductor Corporation Packaging of semiconductor device with a non-opaque cover
US20050009239A1 (en) * 2003-07-07 2005-01-13 Wolff Larry Lee Optoelectronic packaging with embedded window
US20060003483A1 (en) * 2003-07-07 2006-01-05 Wolff Larry L Optoelectronic packaging with embedded window
US6995462B2 (en) * 2003-09-17 2006-02-07 Micron Technology, Inc. Image sensor packages
US7138707B1 (en) * 2003-10-21 2006-11-21 Amkor Technology, Inc. Semiconductor package including leads and conductive posts for providing increased functionality
US6905910B1 (en) * 2004-01-06 2005-06-14 Freescale Semiconductor, Inc. Method of packaging an optical sensor
US7098529B1 (en) * 2004-01-07 2006-08-29 Credence Systems Corporation System and method for packaging a semiconductor device
KR100673950B1 (ko) * 2004-02-20 2007-01-24 삼성테크윈 주식회사 이미지 센서 모듈과 이를 구비하는 카메라 모듈 패키지
US7215018B2 (en) 2004-04-13 2007-05-08 Vertical Circuits, Inc. Stacked die BGA or LGA component assembly
US7705432B2 (en) * 2004-04-13 2010-04-27 Vertical Circuits, Inc. Three dimensional six surface conformal die coating
JP4055762B2 (ja) * 2004-05-25 2008-03-05 セイコーエプソン株式会社 電気光学装置の製造方法
US20050266592A1 (en) * 2004-05-28 2005-12-01 Intersil Americas, Inc. Method of fabricating an encapsulated chip and chip produced thereby
US20050266602A1 (en) * 2004-05-28 2005-12-01 Intersil Americas, Inc. Encapsulated chip and method of fabrication thereof
TWI333249B (en) * 2004-08-24 2010-11-11 Himax Tech Inc Sensor package
US20060197201A1 (en) * 2005-02-23 2006-09-07 Hsin Chung H Image sensor structure
TW200707768A (en) * 2005-08-15 2007-02-16 Silicon Touch Tech Inc Sensing apparatus capable of easily selecting the light-sensing curve
US7897920B2 (en) * 2005-09-21 2011-03-01 Analog Devices, Inc. Radiation sensor device and method
TWI285417B (en) * 2005-10-17 2007-08-11 Taiwan Electronic Packaging Co Image chip package structure and packaging method thereof
WO2007046102A2 (en) 2005-10-19 2007-04-26 Menni Menashe Zinger Methods for the treatment of hyperhidrosis
JP4382030B2 (ja) * 2005-11-15 2009-12-09 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
JP4779614B2 (ja) * 2005-12-08 2011-09-28 ヤマハ株式会社 半導体装置
WO2008082565A1 (en) * 2006-12-29 2008-07-10 Tessera, Inc. Microelectronic devices and methods of manufacturing such devices
US8723332B2 (en) * 2007-06-11 2014-05-13 Invensas Corporation Electrically interconnected stacked die assemblies
WO2008157722A1 (en) * 2007-06-19 2008-12-24 Vertical Circuits, Inc. Wafer level surface passivation of stackable integrated circuit chips
SG149725A1 (en) * 2007-07-24 2009-02-27 Micron Technology Inc Thin semiconductor die packages and associated systems and methods
SG149724A1 (en) 2007-07-24 2009-02-27 Micron Technology Inc Semicoductor dies with recesses, associated leadframes, and associated systems and methods
US8704379B2 (en) 2007-09-10 2014-04-22 Invensas Corporation Semiconductor die mount by conformal die coating
US7911018B2 (en) 2007-10-30 2011-03-22 Panasonic Corporation Optical device and method of manufacturing the same
JP2009124515A (ja) * 2007-11-15 2009-06-04 Sharp Corp 撮像モジュールおよびその製造方法、電子情報機器
JP5763924B2 (ja) 2008-03-12 2015-08-12 インヴェンサス・コーポレーション ダイアセンブリを電気的に相互接続して取り付けられたサポート
US7863159B2 (en) * 2008-06-19 2011-01-04 Vertical Circuits, Inc. Semiconductor die separation method
US9153517B2 (en) 2008-05-20 2015-10-06 Invensas Corporation Electrical connector between die pad and z-interconnect for stacked die assemblies
US8415203B2 (en) * 2008-09-29 2013-04-09 Freescale Semiconductor, Inc. Method of forming a semiconductor package including two devices
US7820485B2 (en) * 2008-09-29 2010-10-26 Freescale Semiconductor, Inc. Method of forming a package with exposed component surfaces
CN101740528B (zh) * 2008-11-12 2011-12-28 力成科技股份有限公司 增进散热的无外引脚式半导体封装构造及其组合
JP2010166021A (ja) * 2008-12-18 2010-07-29 Panasonic Corp 半導体装置及びその製造方法
CN102473697B (zh) * 2009-06-26 2016-08-10 伊文萨思公司 曲折配置的堆叠裸片的电互连
TWI520213B (zh) 2009-10-27 2016-02-01 英維瑟斯公司 加成法製程之選擇性晶粒電絕緣
TWI544604B (zh) 2009-11-04 2016-08-01 英維瑟斯公司 具有降低應力電互連的堆疊晶粒總成
US8742350B2 (en) 2010-06-08 2014-06-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Proximity sensor
US8492720B2 (en) 2010-06-08 2013-07-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Small low-profile optical proximity sensor
US8618620B2 (en) 2010-07-13 2013-12-31 Infineon Technologies Ag Pressure sensor package systems and methods
US8743207B2 (en) 2010-07-27 2014-06-03 Flir Systems Inc. Infrared camera architecture systems and methods
US20140175628A1 (en) * 2012-12-21 2014-06-26 Hua Pan Copper wire bonding structure in semiconductor device and fabrication method thereof
CN205159286U (zh) 2012-12-31 2016-04-13 菲力尔系统公司 用于微辐射热计真空封装组件的晶片级封装的装置
US9159852B2 (en) 2013-03-15 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device and method
US9368423B2 (en) 2013-06-28 2016-06-14 STATS ChipPAC Pte. Ltd. Semiconductor device and method of using substrate with conductive posts and protective layers to form embedded sensor die package
CN103996687A (zh) * 2014-06-12 2014-08-20 中国电子科技集团公司第四十四研究所 局部减薄背照式图像传感器结构及其封装工艺
US9490195B1 (en) 2015-07-17 2016-11-08 Invensas Corporation Wafer-level flipped die stacks with leadframes or metal foil interconnects
US9871019B2 (en) 2015-07-17 2018-01-16 Invensas Corporation Flipped die stack assemblies with leadframe interconnects
US9825002B2 (en) 2015-07-17 2017-11-21 Invensas Corporation Flipped die stack
WO2017049318A1 (en) 2015-09-18 2017-03-23 Synaptics Incorporated Optical fingerprint sensor package
US9508691B1 (en) 2015-12-16 2016-11-29 Invensas Corporation Flipped die stacks with multiple rows of leadframe interconnects
US10566310B2 (en) 2016-04-11 2020-02-18 Invensas Corporation Microelectronic packages having stacked die and wire bond interconnects
US9595511B1 (en) 2016-05-12 2017-03-14 Invensas Corporation Microelectronic packages and assemblies with improved flyby signaling operation
US9728524B1 (en) 2016-06-30 2017-08-08 Invensas Corporation Enhanced density assembly having microelectronic packages mounted at substantial angle to board
IT201700030588A1 (it) 2017-03-20 2018-09-20 Federica Livieri “composizione per uso nel trattamento dell'iperidrosi plantare predisponente alle micosi cutanee del piede”
EP3396329A1 (en) * 2017-04-28 2018-10-31 Sensirion AG Sensor package
US10177074B1 (en) 2017-10-04 2019-01-08 Semiconductor Components Industries, Llc Flexible semiconductor package
CN109346415B (zh) * 2018-09-20 2020-04-28 江苏长电科技股份有限公司 封装结构选择性包封的封装方法及封装设备
WO2020207830A1 (en) * 2019-04-08 2020-10-15 Ams Ag Optical sensor including integrated diffuser
CN111584529A (zh) * 2020-05-18 2020-08-25 甬矽电子(宁波)股份有限公司 传感器封装结构及封装方法
US11584638B2 (en) * 2020-07-30 2023-02-21 Invensense, Inc. Reducing delamination in sensor package
US11747273B2 (en) * 2020-09-28 2023-09-05 Asahi Kasei Microdevices Corporation Gas sensor
US20220173256A1 (en) * 2020-12-02 2022-06-02 Texas Instruments Incorporated Optical sensor packages with glass members

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940566A (ja) * 1982-08-30 1984-03-06 Canon Inc カラ−固体撮像装置の製造方法
JPS61207062A (ja) * 1985-03-12 1986-09-13 Seiko Epson Corp 固体撮像装置
JPS6269674A (ja) * 1985-09-24 1987-03-30 Mitsubishi Electric Corp 固体撮像素子およびその製造方法
US4957882A (en) * 1988-11-25 1990-09-18 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0813107B2 (ja) * 1986-09-05 1996-02-07 オリンパス光学工業株式会社 固体撮像装置
JPH0724287B2 (ja) * 1987-02-12 1995-03-15 三菱電機株式会社 光透過用窓を有する半導体装置とその製造方法
US5264393A (en) * 1988-11-25 1993-11-23 Fuji Photo Film Co., Ltd. Solid state image pickup device and method of manufacturing the same
JPH065828A (ja) * 1992-06-16 1994-01-14 Sony Corp 超小型ｃｃｄモジュール
JPH1197656A (ja) 1997-09-22 1999-04-09 Fuji Electric Co Ltd 半導体光センサデバイス
WO2001015237A1 (en) 1999-08-20 2001-03-01 Amkor Technology, Inc. Chip-sized optical sensor package
US6266197B1 (en) 1999-12-08 2001-07-24 Amkor Technology, Inc. Molded window array for image sensor packages
JP2001203913A (ja) * 2000-01-21 2001-07-27 Sony Corp 撮像装置、カメラモジュール及びカメラシステム
US6384472B1 (en) 2000-03-24 2002-05-07 Siliconware Precision Industries Co., Ltd Leadless image sensor package structure and method for making the same
US6492699B1 (en) * 2000-05-22 2002-12-10 Amkor Technology, Inc. Image sensor package having sealed cavity over active area
JP3725012B2 (ja) * 2000-08-17 2005-12-07 シャープ株式会社 レンズ一体型固体撮像装置の製造方法
US6342406B1 (en) 2000-11-15 2002-01-29 Amkor Technology, Inc. Flip chip on glass image sensor package fabrication method
JP3078617U (ja) * 2000-12-27 2001-07-10 汎太半導體股▲ふん▼有限公司 イメージｉｃパッケージング構造
JP4637380B2 (ja) * 2001-02-08 2011-02-23 ルネサスエレクトロニクス株式会社 半導体装置
US6661083B2 (en) * 2001-02-27 2003-12-09 Chippac, Inc Plastic semiconductor package
JP2002270803A (ja) * 2001-03-14 2002-09-20 Ricoh Co Ltd 固体撮像装置、画像読取ユニット及び画像形成装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940566A (ja) * 1982-08-30 1984-03-06 Canon Inc カラ−固体撮像装置の製造方法
JPS61207062A (ja) * 1985-03-12 1986-09-13 Seiko Epson Corp 固体撮像装置
JPS6269674A (ja) * 1985-09-24 1987-03-30 Mitsubishi Electric Corp 固体撮像素子およびその製造方法
US4957882A (en) * 1988-11-25 1990-09-18 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing semiconductor device

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JP4705784B2 (ja) 2011-06-22
TW200414476A (en) 2004-08-01
TWI233685B (en) 2005-06-01
JP2006505126A (ja) 2006-02-09
US6958261B2 (en) 2005-10-25
AU2003275308A1 (en) 2004-05-25
KR101031394B1 (ko) 2011-04-26
KR20050071637A (ko) 2005-07-07
WO2004040660A1 (en) 2004-05-13
CN1692501A (zh) 2005-11-02
US20040080029A1 (en) 2004-04-29
US6667543B1 (en) 2003-12-23

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