CN100411086C - 薄膜元件制造方法、薄膜晶体管电路板、有源矩阵型显示装置 - Google Patents

薄膜元件制造方法、薄膜晶体管电路板、有源矩阵型显示装置 Download PDF

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CN100411086C
CN100411086C CNB2004100022168A CN200410002216A CN100411086C CN 100411086 C CN100411086 C CN 100411086C CN B2004100022168 A CNB2004100022168 A CN B2004100022168A CN 200410002216 A CN200410002216 A CN 200410002216A CN 100411086 C CN100411086 C CN 100411086C
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木村睦
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Abstract

一种薄膜元件的制造方法、薄膜晶体管电路基板、有源矩阵型显示装置，通过使所述芯片(14)为矩形、元件芯片(14)的短边与第二基板(21)弯曲的方向一致，在以可弯曲的材料形成第二基板(21)和布线，获得可弯曲的电子电路、薄膜晶体管电路、有源矩阵型显示装置时，不使元件芯片(14)从第二基板(21)剥离或元件芯片(14)断裂。所述电子电路是在第一基板上形成功能元件，在第二基板上形成布线，从第一基板剥离包含一个以上功能元件的元件芯片(14)，复制到第二基板(21)上，把第二基板(21)弯曲使用的电子电路，所述薄膜晶体管电路是在所述电子电路中，功能元件为薄膜晶体管的薄膜晶体管。

Description

薄膜元件制造方法、薄膜晶体管电路板、有源矩阵型显示装置
技术领域
本发明涉及应用了功能元件等薄膜元件的基板间复制技术的薄膜元件的制造方法、薄膜晶体管电路板、具有它的有源矩阵型显示装置、电光装置和电子仪器。
背景技术
在具有功能元件例如薄膜晶体管或有机场致发光元件、该功能元件间的布线或支撑基板的电子电路中，常常功能元件是全体的一部分，此外是布线或支撑基板。当把与功能元件和布线或支撑基板作为一体，经过同一制造工艺制造该电子电路时，需要用于制造高功能的功能元件的高度复杂的制造工艺，所以一般制造成本变为高额。
可是，只为了制造布线或支撑基板，不需要高度复杂的制造工艺，制造成本是廉价的。若能够做到分别制造功能元件、布线或支撑基板后只在必要的部分配置功能元件，则作为全体来平均，可减少该电子电路的制造成本。
因此，开发了：在第一基板上形成功能元件，在第二基板上形成布线，从第一基板剥离包含一个以上功能元件的元件芯片，复制到第二基板上的电子电路；在该电子电路中，功能元件为薄膜晶体管的薄膜晶体管电路；在该薄膜晶体管电路中，把薄膜晶体管作为有源矩阵元件使用的有源矩阵型显示装置。
根据该方法，能够只在必要的部分配置功能元件，所以如果作为全体平均，能减少该电子电路或薄膜晶体管电路或有源矩阵型显示装置的制造成本。此外，这时，作为剥离或复制的工艺，使用激光照射或粘合剂。(例如，参照非专利文献)
图1是剥离复制方法的工序图。在第一基板11上隔着剥离层12形成功能元件13。在第二基板21上形成布线22和焊盘23。从第一基板11上，通过激光器31的照射，由激光剥离包含一个以上的功能元件13的元件芯片14。在第二基板21上预先涂敷有粘合剂32，元件芯片14复制到第二基板21上。
图2是元件芯片的平面图。元件芯片14形状是矩形，配置在第一基板11上。
[非专利文献]
T.Shimoda，et al，Techn.Dig.IEDM 1999，289，S.Utsunomiya，et al，Dig.Tech.Pap.SID2000，916，T.Shimoda，Proc.Asia Display/IDW’01，327，S.Utsunomiya，et al，Proc.Asia Display/IDW’01，339
在从第一基板剥离包含一个以上功能元件的元件芯片，向实际使用的基板即第二基板上复制而制造的薄膜电路中，在使用时，有时把第二基板弯曲使用。
为了配合这样的使用形态，如果用可弯曲的材料形成第二基板或布线，则能容易取得可弯曲的电子电路、薄膜晶体管电路或有源矩阵型显示装置。
可是，这时，当把第二基板弯曲使用时，担心元件芯片从第二基板剥离，或元件芯片断裂。
发明内容
因此，本发明的目的在于：在上述的薄膜电路、或电子电路、薄膜晶体管电路或有源矩阵型显示装置中，不使元件芯片从第二基板剥离或元件芯片断裂。
为了解决上述的课题，在本发明是一种薄膜元件的制造方法，包含把具有形成在第一基板上的多个功能元件的至少一个的元件芯片复制到具有可弯曲性的第二基板上的工序，其特征在于：所述元件芯片的外形是矩形；所述元件芯片的短边和所述第二基板弯曲的方向一致。
在搭载以这样的结构制造的元件芯片的基板中，与元件芯片的长边与所述第二基板弯曲的方向一致时相比，能使元件芯片更难以从第二基板剥离或元件芯片更难以断裂。
此外，在本发明中，所述功能元件最好是薄膜晶体管，这时，本发明可提供继承了上述效果的薄膜晶体管电路。
另外，在本发明中，可提供在所述薄膜晶体管电路中把薄膜晶体管作为有源矩阵元件使用的有源矩阵型显示装置。
如果是这样的薄膜晶体管电路，就能获得继承了上述效果的有源矩阵型显示装置。
此外，在本发明中，可提供搭载了使用本发明的薄膜元件的制造方法制造的薄膜晶体管电路的电光装置和电子仪器。
此外，本发明的思想的一部分在元件芯片的剥离或复制基于其他方法时，也是有效的。
附图说明
下面简要说明附图。
图1是剥离复制方法的工序图。
图2是元件芯片的平面图。
图3(a)是作为本发明实施例的元件芯片的短边和基板弯曲的方向一致的电子电路的概观图、(b)是元件芯片和基板的接合部分的放大图。
图4(a)是作为本发明比较例的元件芯片的长边和基板弯曲的方向一致的电子电路的(a)概观图、(b)元件芯片和基板的接合部分的放大图。
图5是应用了本发明的薄膜元件的制造方法的形态(具有薄膜晶体管电路的基板、有源矩阵型基板)的图。
图6是表示使用本发明制造的薄膜元件的应用例的第二形态(电子纸)的图。
图7是表示使用本发明制造的薄膜元件的应用例的第二形态(电子书)的图。
图8是表示使用本发明的有源矩阵型基板的液晶电光装置的概略结构的图。
图中：11-第一基板；12-剥离层；13-功能元件；14-元件芯片；21-第二基板；22-布线；23-焊盘；31-激光器；32-粘合剂；51-电子纸；53-活页封面；60-元件(功能元件)；61-布线；62-布线；63-布线；64-布线；70-液晶电光装置；73-滤色器；80-有源矩阵基板。
具体实施方式
下面，说明本发明的理想实施形态。另外，关于复制方法的一系列形态，也记载在申请人提出的特愿2001-282423号、特愿2001-282424号等中。
(实施例1)
在本发明的薄膜元件的制造方法中，参照图1说明与以往技术重复的部分。
首先，如图1所示，在把形成在第一基板上的功能元件13复制到第二基板上，形成薄膜元件的点上与以往同样。
首先，在第一基板11上隔着剥离层12形成功能元件13。
这里，剥离层具有吸收后面描述的照射光、在层内和/或界面上产生剥离(以下，称作“层内剥离”、“界面剥离”)的性质。另外，它形成在第一基板11的全面上，但是并不局限于此，例如剥离层12可以按各元件芯片形成。该剥离层12包含组成或特性不同的至少两层，特别优选包含吸收照射光的光吸收层、与该光吸收层的组成或特性不同的其他层。此外，所述其他层优选是遮挡照射光的遮光层(反射层)。该遮光层相对于光吸收层位于与照射光的入射方向相反的一侧，并反射或吸收照射光，发挥阻止或抑制照射光向被复制层一侧侵入的功能。
在本实施例中，作为遮光层，可以对于剥离层，在与光的照射一侧相反一侧形成反射照射光的反射层。该反射层优选能够以10％以上、更优选以30％以上的反射率反射照射光。作为这样的反射层，能列举出由单层或多层构成的金属薄膜、由折射率不同的多个薄膜的层叠体构成的光学薄膜等，但是由于形成容易等理由，优选主要由金属薄膜构成。
作为金属薄膜的构成金属，例如能列举出Ta、W、Mo、Cr、Ni、Co、Ti、Pt、Pd、Ag、Au、Al等或以它们其中的至少一种为主成分的合金。作为构成合金的优选的添加元素，能列举出Fe、Cu、C、Si、B。通过添加它们，能控制热传导系数或反射率。此外，通过物理蒸镀形成反射层时，存在能简单地制造靶(target)的优点。
另外，通过进行合金化，具有比纯金属容易获取材料，并且成本低的优点。此外，虽然未特别限制这样的反射层(遮光层)的厚度，但是通常优选是10nm～10μm左右，更优选是50nm～50μm左右。如果该厚度过厚，则反射层的形成要耗费时间，此外，之后进行的反射层的除去也要耗费时间。此外，如果该厚度过薄，则根据膜组成，有时遮光效果变得不充分。
光吸收层是有助于剥离层的剥离的层，由于吸收照射光，构成该光吸收层的物质的原子间或分子间的结合力消失或减弱、产生消融(abrasion)现象等，达到层内剥离和/或界面剥离。
另外，有时通过照射光的照射，从光吸收层放出气体，产生剥离效果。即存在：光吸收层中包含的成分变为气体放出的情形；剥离层吸收光，一瞬间变为气体，该气体放出，有助于剥离的情形。
作为这样的光吸收层的组成，能列举出如下的组成。
①非晶体硅(a-Si)
在该非晶体硅中可以含H(氢)。这时，H的含量优选为2at％以上左右，更优选是2～20at％左右。这样，如果含给定量的H，则通过照射光的照射，放出氢，在剥离层内产生内压，它将成为剥离上下的薄膜的力。
通过适当地设定成膜条件例如CVD中的气体组成、气压、气氛、气体流量、温度、基板温度、投入功率(power)等条件，能调整非晶体硅中的H的含量。
②氧化硅或硅酸化合物、氧化钛或钛酸化合物、氧化锆或锆酸化合物、氧化镧或镧酸化合物等各种氧化物陶瓷，介质(强介质)或半导体，作为氧化硅，能列举出SiO、SiO2、Si3O2，作为硅酸化合物，例如能列举出K2SiO3、Li2SiO3、CaSiO3、ZrSiO4、Na2SiO3。
作为氧化钛，能列举出TiO、Ti2O3、TiO2，作为钛酸化合物能列举出例如BaTiO4、BaTiO3、Ba2Ti9O20、BaTi5O11、CaTiO3、SrTiO3、PbTiO3、MgTiO3、ZrTiO2、SnTiO4、Al2TiO5、FeTiO3。
作为氧化锆，能列举出ZrO2，作为锆酸化合物，能列举出BaZrO3、ZrSiO4、PbZrO3、MgZrO3、K2ZrO3。
③PZT、PLZT、PLLZT、PBZT等陶瓷或介质(强介质)
④氮化硅、氮化铝、氮化钛等的氮化物陶瓷
⑤有机高分子材料
作为有机高分子材料，可以是具有-CH-、CH2、-CO-(酮)、-CONH-(酰胺)、-NH-(酰亚胺)、-COO-(酯)、-N＝N-(偶氮)、-CH＝N-(西夫)等的键的材料(通过照射光7的照射，这些键被切断)。具体而言，例如，有聚乙烯、聚丙烯那样的聚烯烃，聚酰亚胺，聚酰胺，聚酯，聚甲基丙烯酸甲酯(PMMA)，聚亚苯基硫醚(PPS)，聚醚砜(PES)、环氧树脂等。
⑥金属
作为金属，例如能列举出Al、Li、Ti、Mn、In、Sn，或Y、La、Ce、Nd、Pr、Sm、Gd等稀土金属，或者至少包含它们中的一种的合金。
⑦吸氢合金
作为具体例，能列举出LaNi5那样的稀土类过渡金属化合物的贮氢合金或在Ti类、Ca类的贮氢合金中吸留了氢的材料。
⑧吸氮合金
作为具体例，能列举出在Sm-Fe类、Nd-Co类的稀土类铁、稀土类钴、稀土类镍、稀土类锰化合物中吸留了氮的材料。
此外，光吸收层21的厚度根据剥离目的或剥离层的组成、层结构、形成方法等条件而不同，但是通常优选为1nm～20μm，更优选为10nm～2μm，最优选为40nm～1μm。
如果光吸收层的膜厚过小，则损害成膜的均匀性，有时在剥离中产生不均匀，此外如果膜厚过厚，则为了确保良好的剥离性，有必要增大照射光的功率(光量)，并且在以后除去剥离层时，在作业中耗费时间。此外，光吸收层和反射层的膜厚优选尽可能均匀。
此外，由于与所述同样的理由，剥离层的合计厚度优选为2nm～50μm左右，更希望为20nm～20μm左右。
并未特别限定构成剥离层12的层的形成方法，按照膜组成或膜厚等各条件适当选择。例如，能列举出CVD(包含MOCVD、低压CVD、ECR-CVD)、蒸镀、分子射线蒸镀(MB)、溅射、离子镀敷、PVD等各种气相成膜法，电镀、浸渍电镀(浸渍)、非电解镀等各种镀层法，LangmuirBlodgett(LB)法、旋转镀膜、喷涂法、辊涂等涂敷法，各种印刷法，复制法，喷墨法，粉末喷射法等，也能组合它们中的2个以上来形成。此外，光吸收层和反射层的形成方法可以相同，也可以不同，按照组成等，适当选择。
例如，当光吸收层的组成为非晶体硅(a-Si)时，优选通过CVD特别是低压CVD或等离子体CVD来成膜。
此外，当用基于溶胶-凝胶法的陶瓷构成光吸收层时，或用有机高分子材料构成光吸收层时，优选采用涂敷法特别是旋转镀膜法形成。
此外，基于金属薄膜的反射层，优选通过蒸镀、分子射线蒸镀(MB)、激光消融蒸镀、溅射、离子镀敷、所述各种镀敷法来形成。
此外，构成剥离层12的各层的形成分别由2个工序以上的工序(例如，层的形成工序和热处理工序)进行。
与它平行，或用其他工序，在第二基板21上形成布线22和焊盘23。
然后，从第一基板11上方，用激光器31的照射，通过激光消融，使包含一个以上功能元件13的元件芯片14剥离。在第二基板21上预先涂敷有粘合剂32，元件芯片14被复制到第二基板21上。
此外，在第一基板上形成包含一个以上功能元件的元件芯片14或剥离层12的工序之外，在第二基板21上形成布线22和焊盘23。
当然，也可以另外准备预先形成了布线22和焊盘23的第二基板21。
图3(a)是表示作为本发明实施例的、元件芯片的短边和基板弯曲的方向一致的电子电路的概观图，(b)是元件芯片和基板的接合部分的放大图。这里，元件芯片14的外形为矩形，该元件芯片14的短边和第二基板21弯曲的方向一致。
即通过采用所述构造，相对于第二基板21的曲率半径，元件芯片14的接触长度比较短，所以元件芯片14很难从第二基板21剥离、元件芯片14很难断裂。
图4(a)是作为本发明比较例的、元件芯片的长边和基板弯曲的方向一致的电子电路的概观图，(b)是元件芯片和基板的接合部分的放大图。
在这样的构造中，从图4可知，相对于第二基板21的曲率半径，元件芯片14的接触长度比较长，所以元件芯片14容易从第二基板21剥离、元件芯片14容易断裂。
(使用本发明制造的功能元件的应用例)
图5是表示应用本发明的薄膜元件的制造方法的形态(具有薄膜晶体管电路的基板、有源矩阵型基板)的图。
本实施形态，如所述图3所示，在基板上配置元件芯片，对它进行给定的布线，构成有源矩阵型基板。
在本实施形态中，作为最终基板，可使用有源矩阵型基板等电子光学装置用的各种基板等、在基板上形成由导体构成的布线、电路图案的基板。此外，(功能)元件60除了TFT，还可使用移位寄存器、DA转换器、SRAM、DRAM、电流补偿电路、IC、LSI等各种电路单位。
为了把预先形成在最终基板上的布线61、62和元件60电连接，能使用以下方法形成在元件60的复制后形成的由导体构成的布线63、64：例如金线等金属线的接合；抗蚀剂膜或掩模和溅射法、真空蒸镀法、CVD法、非电解镀法等薄膜形成法组合而进行的金属薄膜或ITO薄膜等导电材料的镀敷技术；通过在涂敷后对基板热处理，把形成金属导体的导电性涂敷液涂敷在给定位置的印刷法；或使用所述导电性涂敷液的喷墨镀膜法等。特别优选利用喷墨镀敷法在给定位置涂敷导电性涂敷液后，对基板进行热处理，形成由金属导体构成的电路的方法。
此外，当然，布线63、64可以形成在元件60的复制前，这时，用与布线61、62相同的工序能形成布线63、64，所以能简化工序。
图6是表示使用本发明制造的薄膜元件的应用例的第二形态(电子纸)的图。
例如，如所述图3所示，能把形成元件芯片的基板作为电子纸应用。本发明的电子纸例如能作为电子书应用。即通过用框体即活页封面(binder)装订多张电子纸51，能实现活页封面型电子书。活页封面型电子书的外观如图7(a)所示。在图7(a)中，多张电子纸51被装订在框体即活页封面53中。这时，在装订的各电子纸1上设置通孔30a、30b，这些通孔30a、30b由设置在活页封面53上的棒状磁性体4a、4b贯穿。可以是棒状磁性体4a、4b的两端部安装在活页封面53上、其中间部分可分割的构造。在分割了中间部分的状态下，电子纸51能从活页封面53自由装卸。即棒状磁性体4a、4b在分割的中间部分能自由开关，在电子纸51的安装时，形成磁的闭环。
如图7(b)所示，活页封面53包含：与棒状磁性体4a、4b对应设置的控制用线圈3a、3b；用于使电流流过这些控制用线圈3a、3b的放大器部3c；用于控制该放大器部3c的CPU部3d。
如图7(c)所示，电子纸51具有：显示区100；在该显示区100以外的位置、并且设置在与上述棒状磁性体4a、4b对应的位置的通孔30a、30b。在图7(d)中，表示电子纸51的更详细的结构。如图7(d)所示，在通孔30a、30b的周围内置有环线圈31a、31b，通孔贯穿这些环线圈的中心部。在这些环线圈31a、31b上连接着放大器部150a，在环线圈31a、31b中产生的电流提供给放大器部150a。集成电路150驱动并控制扫描驱动器区域13和数据驱动器区域14。据此，在显示区上显示所需的数据。
如上所述，本例子的电子纸51具有由环线圈31a、31b和贯穿其中心部的通孔30a、30b构成的非接触端子，通过该非接触端子接受信号的收发和电力的供给。环线圈和通孔的个数同一图中为2个，但是设置为1个或多个，也没问题。
而在活页封面53一侧设置有与电子纸51的通孔30a、30b对应的棒状磁性体4a、4b，通过由该棒状磁性体4a、4b贯穿通孔30a、30b，能阅览或搬运。在棒状磁性体4a、4b上缠绕着控制用线圈3a、3b，所以通过利用装订的各电子纸的环线圈和框体的控制线圈之间的电磁感应，从框体通过磁对电子纸进行供电和两者间的信号的收发。这样的非接触的供电和信号收发能应用例如特开平11-039440号公报中描述的手法。通过使收发的信号包含特定的ID代码(识别代码)，能只选择装订的多个电子纸内的所需电子纸，改写其内容。
这样的活页封面型电子书具有能一边适当装卸多个电子纸，一边进行打印、阅览、搬运等的效果。此外，以非接触方式进行供电和信号收发，所以没必要在电子纸和电子书框体部设置露出的端子部，因此，能提供可弯曲性优异，可靠性、耐久性优异的活页封面型电子书。
图8是表示本发明的活页封面的一例即液晶电光装置的概略结构的图，该液晶电光装置70具有有源矩阵基板80和滤色器73和设置在它们之间的空间74中的液晶材料作为主要构成要素。对于有源矩阵基板80，在玻璃基板的外侧设置有偏振板75，在内侧设置有驱动电路80A，在其上设置有定向膜(省略图示)。驱动电路80A包括象素电极82、数据线83和栅极线84、元件81。滤色器73的构造为，在玻璃基板72的外侧设置偏振板75，在内侧依次层叠省略了详细图示的黑底(black matrix)、RGB滤色器层、保护层、透明电极、定向膜。在下方的偏振板75的外侧设置有背光76。
此外，本发明的电光装置是使用所述本发明的有源矩阵基板制造而成的，与使用以往的有源矩阵基板制造的电光装置相比，能降低成本和提高质量。此外，在本实施形态中，作为有源矩阵型显示装置，列举了液晶电光装置，但是当然也能应用于有机场致发光装置、电泳显示装置等其他电光装置。此外，根据本发明，通过在最终基板的给定位置上正确配置微小的元件，能提高对基板的弯曲的跟踪性，通过使用柔软的基板，能提供柔软、轻、弯曲性强的有源矩阵基板。另外，能提供具有曲面显示器等的曲面的有源矩阵基板。
这些电光装置例如可搭载在移动电话等电子仪器上，所以本发明中能提供享受到所述优点的电子仪器。

Claims (6)

1. 一种薄膜元件的制造方法，包含把具有形成在第一基板上的多个功能元件中的至少一个的元件芯片复制到具有可弯曲性的第二基板上的工序，其特征在于：
所述元件芯片的外形是矩形；
所述元件芯片的短边和所述第二基板弯曲的方向一致。
2. 根据权利要求1所述的薄膜元件的制造方法，其特征在于：
所述功能元件是薄膜晶体管。
3. 一种薄膜晶体管电路板，其具有通过权利要求2所述的薄膜元件的制造方法制造的薄膜晶体管。
4. 一种有源矩阵型显示装置，其特征在于：
把权利要求3所述的薄膜晶体管电路板作为有源矩阵元件使用。
5. 一种电光装置，其具有权利要求3所述的薄膜晶体管电路板。
6. 一种电子设置，其具有权利要求5所述的电光装置。
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