TW200423412A - Manufacturing method of thin film device, thin film transistor circuit substrate, active matrix type display apparatus, optoelectronic apparatus, and electronic machine - Google Patents

Manufacturing method of thin film device, thin film transistor circuit substrate, active matrix type display apparatus, optoelectronic apparatus, and electronic machine Download PDF

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Publication number
TW200423412A
TW200423412A TW092135858A TW92135858A TW200423412A TW 200423412 A TW200423412 A TW 200423412A TW 092135858 A TW092135858 A TW 092135858A TW 92135858 A TW92135858 A TW 92135858A TW 200423412 A TW200423412 A TW 200423412A
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Taiwan
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substrate
thin film
film transistor
active matrix
manufacturing
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TW092135858A
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English (en)
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Mutsumi Kimura
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Seiko Epson Corp
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Publication of TW200423412A publication Critical patent/TW200423412A/zh

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L9/00—Rigid pipes
    • F16L9/12—Rigid pipes of plastics with or without reinforcement
    • F16L9/121—Rigid pipes of plastics with or without reinforcement with three layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2597/00—Tubular articles, e.g. hoses, pipes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13613—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)

Description

200423412 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於應用機能元件之薄膜元件的基板間複寫 技術之薄膜元件之製造方法，以及薄膜電晶體電路，及具 備此之主動矩陣型顯示裝置，光電裝置，電子機器。 【先前技術】 機能元件，例如，在薄膜電晶體或有機電致發光元件 與，具備此機能元件間之配線或支撐基板之電子電路之中 係機能元件係在全體之一部分，且除此之外爲配線或支撐 基板之情況則並不少，而對於將機能元件與配線或支撐基 板作爲一體經由相同的製造處理來製造電子電路之情況係 因需要爲了作成高機能之機能元件的高度且複雜之製造處 理，故一般來說，製造成本則將變高。 但，對於只有配線或支撐基板係將不需要高度且複雜 之製造處理，故製造成本則爲廉價，而如將機能元件與， 配線或支撐基板個別製作，並只對於需要的部份配置機能 元件而作爲全體取得平均，將可降低此電子電路的製造成 本。 在此，形成機能元件於第1基板上，並於第2基板上 形成配線’再從第1基板剝離包含一個以上機能元件之元 件晶片，並複寫至第2基板21，再彎曲第2基板2 1所使 用之電子電路，其特徵爲針對在此電子電路，機能元件則 爲薄膜電晶體之薄膜電晶體電路，另外，針對在此薄膜電 -4- (2) 200423412 晶體電路，作爲主動矩陣元件使用薄膜電晶體，開發主動 矩陣型顯示裝置 如根據此方法，因可只對於需要的部份配置機能元件 ，故作爲全體取得平均，將可降低此電子電路或薄膜電晶 體電路或主動矩陣型顯示裝置之製造成本，然而，此時， 作爲剝離或複寫之處理係採用雷射去除或接著劑（例如參 照非申請專利文獻）
圖1係爲剝離複寫方法之工程圖，於第1基板1 1藉 由剝離層1 2來形成機能元件1 3，而於第2基板2 1上形 成配線2 2與墊片2 3，利用雷射3 1之照射由雷射去除剝 離包含一個以上機能元件1 3之元件晶片1 4，而對於第2 基板2 1上係預先塗抹有接著劑32，並複寫元件晶片1 4 於第2基板2 1上。 圖2係爲元件晶片之平面圖，而元件晶片1 4 1 4之形 狀係爲矩形，並配置於第1基板1 1上。
〔非申請專利文獻〕 T.Shimoda，et al，T e c h η · D i g · IE D Μ 1 999，289， S. Utsunomiya ? et al，Dig.Tech.Pap.SID 2000，916， T. Shimoda，P r o c · A s i a D i s p 1 ay /1D W ’ 0 1，3 2 7， S.Utsunomiya，et al，P ro c · A s i a D i sp 1 ay /1D W ’ 0 1，3 3 9 o 【發明內容】 〔欲解決發明之課題〕 在根據從第1基板剝離包含一個以上機能元件之元件 -5· (3) (3)200423412 晶片’然後由複寫至爲實際使用基板之第2基板上的情況 所製造之薄膜電路之中係針對再其時用時，有彎曲其第2 基板來使用之情況。 爲配合所述之使用型態，如由可彎曲之構成來形成第 2基板或配線，將可容易得到可彎曲之電子電路或薄膜電 晶體電路或主動矩陣型顯示裝置。 但此情況，於彎曲第2基板來使用時，將會顧慮從第 2基板元件晶片剝落，以及元件晶片破裂之情況。 在此，本發明之目的係針對在上述薄膜電路，或電子 電路’薄膜電晶體電路或主動矩陣型顯示裝置，作爲不會 從第2基板元件晶片剝落，以及元件晶片破裂之情況的構 成。 〔爲了解決課題之手段〕 爲了解決上述課題，針對在本發明之特徵係將包含形 成在第1基板之複數機能元件之至少1個之元件晶片爲包 含複寫於具有可曲性之第2基板之工程的薄膜元件之製造 方法，其中前述元件晶片之外形係爲矩形，並前述元件晶 片之短邊與’第2基板被彎曲之方向則爲一致。 在搭載由如此構成所製造之元件晶片之基板之中係比 較兀件晶片之短邊與，前述第2基板被彎曲之方向爲一致 時，將作爲不易從第2基板，元件晶片剝落，以及元件晶 片破裂之情況。 另外針對本發明係前述機能元件爲薄膜電晶體之情況 -6 · (4) 200423412 則爲理想，並針對在此情況，在本發明之中係提供繼承上 述效果之膜電晶體電路。 又，針對在本發明之特徵係提供針對上述之膜電晶體 電路，作爲主動矩陣元件採用膜電晶體之情況之主動矩陣 型顯示裝置。 如爲如此之膜電晶體電路，將可得到繼承上述效果之 主動矩陣型顯示裝置之情況。
另外，針對本發明係提供搭載採用本發明之薄膜元件 製造方法所製造之膜電晶體電路的光電裝置及電子機器。 然而，本發明之思想之一部分係元件晶片之剝落或複 寫，當然即使在由其他方法之情況亦爲有效。 【實施方式】 〔發明之實施型態〕
以下說明本發明之理想的實施型態，然而，關於有關 複寫方法之一連串之型態係亦針對在申請專利者揭示之曰 本特願2001-282423號，日本特願2001-282424號有所記 載。 (第1實施例） 針對本發明之薄膜元件之製造方法，與以往技術重複 之部分係採用圖1來進行說明。 首先如圖1，針對在將形成在第1基板之機能元件1 3 複寫至第2基板，形成薄膜元件之情況係與以往相同。 (5) (5)200423412 首先，於第1基板1 1上，則藉由剝離層12來形成機 能元件1 3。 在此剝離層係爲吸收後述之照射光，並針對在其層內 及/或介面具有產生剝離（以下稱爲〔層內剝離〕，〔界 面摸離〕）之構成，然而，雖形成在第1基板11上之全 面，但並無限定於此，例如剝離層1 2係亦可區分在每個 元件晶片，而此剝離層1 2係組成或特性之不同，至少包 含2個層，特別是包含有吸收照射光之光吸收層與，與該 光吸收層組成或特性之不同之其他層則爲理想，另外前述 之其他層係爲將照射光進行遮光之遮光層（反射層）則爲 理想，而此遮光層係位置在對於光吸收層與這設光射入之 方向相反側，並反射或吸收照射光來發揮阻止或控制照射 光侵入致被複寫層側之機能。 在本實施型態之中係作爲遮光層亦可將反射照射光之 反射層形成於對於剝離層與光之照射側相反側，而此反射 層係如以10°/。以上，而更理想則是30%以上之反射率來得 到反射照射光之構成即可，而作爲如此之反射層係可舉出 由單層或複數層而成之金屬薄膜，由折射率之不同的複數 薄膜之堆積體而成之光學薄膜，但層可容易形成等.之理由 ，主要以金屬薄膜所構成則爲理想。 作爲金屬薄膜之構成金屬係可舉出Ta，W，Mo，Cr ，Ni，Co，Ti，Pt，Pd，Ag，An，A1 等，或者將這些之 中之至少1種作爲基本成份之合金，而作爲構成合金之理 想添加元素係例如可舉出F e，C u，C，S i，B，而根據添 -8- (6) (6)200423412 加這些的情況將可控制熱傳導率或反射率，另外由物理蒸 鍍形成反射層之情況，將有容易製造目標之利點，更加地 ，由作爲合金化之情況將可比純金屬更容易取得材料，且 有低成本之優點，另外，如此遮光層（反射層）之厚度係 並無特別限定，通成理想爲l〇nm〜10 // m程度，而更爲理 想則是50nm〜5 μιη程度，而當厚度過厚時，對於反射層 之形成費時，另外亦對於之後所進行之反射層去除亦爲費 時，另外，當此厚度過薄時，根據膜組成時係有遮光效果 不充分之情況。 光吸收層係爲有助於剝離層之剝離的層，並吸收照射 光，構成該光吸收層之物質之原子間或分子間的結合力消 失或減少之情況，而對於現象論來說係由產生消融之情況 至層內剝離及/或界面摸離。 更加地，亦有由照射光之照射，從光吸收層釋放氣體 ，而發現剝離效果之情況，即，有含於光吸收層之成份成 爲氣體來釋放之情況與，剝離層吸收光一瞬間成爲氣體釋 放其蒸氣並助於剝離之情況。 作爲如此之光吸收層的組成係例如可舉出接下來的構 成。 ①非晶質矽（a-Si) 對於此非晶質矽中係亦可含有Η (氫），而此情況， Η的含有量係2at%以上程度則爲理想，而更爲理想係爲 2〜20at%程度，而如此，當含有規定Η量時，根據光的照 射’將釋放氫，並於剝離層產生內壓，而此將成爲剝離上 -9 - (7) 200423412 下薄膜之力量。 非晶質矽中之Η的含有量係成膜條件， 當調整針對C V D之氣體組成，氣壓，氣體環 量，溫度，基板溫度，投入能量等條件之情況 整。 ② 作爲氧化硅素或硅氧化物，氧化鈦或鈦 化锆或鉻氧化物，氧化鑭或鑭氧化物等之各種 ，誘電體（強誘電體）或者半導體，氧化硅素 出 SiO’ Si〇2，Si3，〇2，而作爲桂氧化物係 K2，Si03，Li2Si〇3，CaSi03，ZrSi04，Na2SiO 作爲氧化鈦係例如可舉出TiO，Ti2o3， 爲鈦氧化物係例如可舉出BaTi04，BaTi〇3， ，BaTi〇5〇】】，CaTi03，SrTi03，PbTi03， ZrTi02，SnTi04，Al2Ti05，FeTi03 〇
作爲氧化鍩係可舉出Zr02，而作爲銷氧 可舉出 BaZr02，ZrSi04，PbZr03，MgZr03，K ③ PZT， PLZT， PLLZT， PBZT 等之陶瓷 強誘電體）。 ④ 氮化硅素，氮化鋁，氮化鈦，等之氮化! ⑤ 有機高分子材料 作爲有機高分子材料係具有-CH-，-CH2-， -CONH-，·ΝΗ·，-COO-，-N = N-，-CH = N-等之 光7之照射切斷這些之結合）之構成，特別是 鏈任何結合構成都可以，而具體來說係例如可 例如可由適 境，氣體流 將可進行調 氧化物，氧 氧化物陶瓷 係例如可舉 例如可舉出 3 〇 ° Ti02 ，而作 Ba2Ti〇9〇2〇 MgTi03， 化物係例如 2 Z r Ο 3 0 。 或誘電體（ 吻陶瓷 •CO-， 鏈（由照射 如具有這些 舉出如聚乙 -10- (8) (8)200423412 烯，聚丙烯之聚烯，聚 亞胺，聚 胺，聚酯聚甲基丙烯 酸酯（PMMA)，聚苯基硫化物（PPS)，聚醚磺（PES) ，環氧樹脂等。 ⑤金屬 作爲金屬係例如可舉出如 Al，Li，Ti ’ Mn，In，Sn 或Y，La，Ca，Nd，Pr，Sm，Gd之希土類金屬，或包含 這些之中至少1種之合金。 ⑦ 氫吸藏合金 作爲具體例係可舉出如LaNi5之希土類遷移金屬化合 物之氫吸藏合金，或使氫吸藏於Ti係，Ca系之氫吸藏合 金的構成。 ⑧ 氮吸藏合金 作爲具體例係可舉出如Sm-Fe系，Nd-Co係之希土類 鐵，希土類鈷，希土類鎳或或使氮吸藏於希土類錳化合物 的構成。 另外，光吸收層2 1之厚度係根據剝離目的或剝離層 之組成，層構成形成方法等之諸條件而有所不同，但通常 理想爲1 nm〜20 // m程度，而更理想爲1 Onm〜2 // m程度， 更加理想爲40nm〜1 m程度。 光吸收層之膜厚當過薄時，將會有損及成膜之均一性 ，而對於剝離產生不均之情況，另當膜厚過厚時，爲了確 保良好之剝離性，將必須要有較強之照射光之能量（光量 )的同時，在之後去除剝離層時，對於其處理將費時，然 而，理想的光吸收層及反層之膜厚係盡可能爲均一之情況 -11 - (9) (9)200423412 另外，從與前述之同樣理由，更理想之剝離層之合計 厚度係2nm〜50//m程度，而更加理想係爲20nm〜20ym 程度。 構成剝離層之形成方法係並無特別限定，而因應膜組 或膜厚等之諸條件來做適當的選擇，例如可舉出C V D ( 包含MOCVD，低壓CVD，ECR-CVD)，蒸鍍，分子線蒸 鍍（MB )，濺射法’離子電鍍，PVD等之各種氣相成魔 法，電鍍，浸漬電鍍，無電解電鍍等之各種電鍍法，蘭米 爾·射出（LE )法，旋轉塗抹法，噴墨法，滾輪塗抹等 之塗抹法，各種印刷法，複寫法，濺射法，粉末噴射法等 ，而亦可由組合這些之中2種以上來形成，然而，光吸收 層與反射層之形成方法係亦可爲相同或不同之構成，並因 應其組成等來做適當的選擇。 例如，光吸收層之組成對於非晶質矽（a- S i )之情況 係根據CVD，特別是低壓CVD或等離子CVD成膜之情況 則爲理想。 另外，對於由根據融膠-凝膠法之陶瓷構成光吸收層 之情況或，由有機高分子材料來構成之情況係由塗抹法， 特別是自旋塗抹來形成之情況則爲理想。 另外，根據金屬薄膜之反射層係根據，蒸鍍，分子線 蒸鍍（MB )，雷射去除蒸鍍，濺射法，離子電鍍，前述 各種電鍍等形成之情況則爲理想。 另外，構成剝離層I 2之各層的形成係亦可各自由2 •12- (10) (10)200423412 工程以上之工程（例如，層的行程工程與熱處工程）來 進行。 由與此平行，或由其他工程，於第2基板21形成配 線2 2與墊片2 3。 並且從第1基板1 1上方，由雷射3 1之照射，根據雷 射去除剝離包含1個以上機能元件1 3之元件晶片1 4，而 對於第2基板2 1係預先塗抹接著劑3 2，並複寫元件晶片 1 4於第2基板2 1上。 與形成包含1個以上機能元件1 3之元件晶片1 4或剝 離層1 2於第1基板之工程不同地，於第2基板2 1上形成 配線22與墊片23。 當然亦可另外預先準備形成配線22與墊片23之第2 基板21。 圖3係爲作爲本發明之實施例的元件晶片之短邊與， 基板被彎曲之方向爲一致之電子電路之（a)槪觀圖與（b ) 元件晶片與基板之接著部分的擴大圖，而在此，元件 晶片1 4之外形形狀係爲矩形，並元件晶片1 4之短邊與， 基板被彎曲之方向成爲一致。 即’根據採用上述構造之情況，對於第2基板2 1之 曲率半徑，比較來說因元件晶片1 4之接觸長度短，故元 件晶片14可不易從第2基板21剝落，以及元件晶片14 不易破裂之情況。 圖4係爲作爲本發明之實施例的元件晶片之短邊與’ 基板被彎曲之方向爲一致之電子電路之（a)槪觀圖與（b -13- (11) (11)200423412 )元件晶片與基板之接著部分的擴大圖。 在如此之構造之中係可從圖4 了解到，對於第2基板 2 1之曲率半徑，比較來說因元件晶片丨4之接觸長度短， 故元件晶片1 4容易從第2基板2 1剝落，以及元件晶片 1 4不易破裂之情況。 (使用本發明所製造之機能元件的應用例） 圖5係表示應用本發明之薄膜元件之製造方法型態（ •具備薄膜電晶體電路之基’板，有源矩陣型基板）的圖。 本實施型態係爲配置如針對在上述圖3所示之元件晶 片於基板上，並施以規定之配線於此來構成有源矩陣型基 板之構成。 在本實施型態之中係作爲最終基板，採用主動矩陣型 基板之光電裝置用之各種基板等之形成由導體而成之配線 ，電路圖案於基板上之構成，然而，（機能）元件60係 除了 TFT，亦可採用偏移寄存器，DA變頻器，SRAM， DRAM，電流補償電路，1C，LSI等之各種電路單位。 因以電接續預先形成在基板上之配線61，62與元件 60，故於元件之複寫後所形成之由導體而成之配線63， 64係例如可採用金線等之金屬線之接合；光阻劑膜或光罩 與濺射法，真空蒸鍍法，CVD法，與無電解電鍍法等之 薄膜形成法組合之金屬薄膜或ITO薄膜等之導電材料之塗 層技術；於塗抹後根據將基板進行熱處理之情況來塗抹形 成金屬導體之導電性塗抹液於規定位置之印刷法：或採用 -14- (12) (12)200423412 前述導電性塗抹液之噴墨塗層法等之方法來形成，而特別 是由噴墨塗層法來塗抹導電性塗抹液於規定位置之後，對 於基板施以熱處理來形成由金屬導體而成之電路之方法則 爲理想。 然而，當然，配線63，64係亦可行成於元件60之複 寫前，而此情況係因可由與配線6 1，62相同之工程來形 成配線63，64，故可帶來工程之簡略化。 圖6係爲表示採用本發明所製造之薄膜元件的應用例 之第2型態（電子紙）的圖。 例如，作爲電子紙可適用形成如上述圖3之機能晶片 之基板，即，複數張之電子紙51則根據由爲框體之夾合 物所裝訂之情況，將可實現夾合物型電子書之情況，夾合 物型電子書的外觀則表示於圖7(a)，針對同圖，被複 數張裝訂之電子紙5 1則被裝訂於爲框體之夾合物53，而 此情況，對於被裝訂之各電子紙1係設置有貫通孔3 0a， 3 0b，並這些貫通孔30a，30b則由設置在夾合物53之棒 狀磁性體4a，4b所貫穿，而棒狀磁性體4a，4b係安裝兩 端部於夾合物5 3，並可呈分割其中間部分之構造也可以 ，而在分割其中間部分之中係電子紙5 1成爲可從夾合物 53自由裝拆，也就是，棒狀磁性體4a，4b係亦可針對在 被分割之中間部分作爲自由開關，並於裝訂電子紙5 1時 ，形成磁性之閉環之構成。 夾合物5 3係如同圖（b )所示，包含因應棒狀磁性體 4a，4b所設置之控制用線圈3a，3b與，爲了流通電流於 -15- (13) (13)200423412 這些控制用線圈3a，3b之放大部3c與，爲了控制此放大 部3c之CPU部3d所構成著。 如同圖（c )所示，電子紙5 1係具有顯示範圍1 〇 〇與 ，在此顯示範圍1 〇〇以外之位置，且因應上述棒狀磁性體 4a，4b之位置所設置之貫通孔30a，30b，而對於同圖（d )係表示有電子紙5 1之更詳細之構成，如同圖所示，對 於貫通孔30a，30b之周圍係內藏有閉環線圈31a，31b， 並貫通孔貫通著這些閉環線圈之中心部，另對於這些閉環 線圈31a，31b係接續有放大部150a，並傳達針對在閉環 線圈31a，3 1b產生之電流於放大部150a，而放大部150a 係將有關應顯示之內容的資料等傳達至非接觸資料通信積 體電路1 5 0，而積體電路1 5 0係驅動控制掃描驅動範圍1 3 及資料驅動範圍1 4，由此，使期望之資料顯示於顯示範 圍 1 00。 如以上，本例之電子紙5 1係具有由閉環線圈3 1 a， 3 1b與，貫通其中心部之貫通孔30a，30b而成之非接觸 端子，並藉由此非接觸端子來接受信號之收送信及電力的 供給，而閉環線圈及貫通孔之個數係在同圖所示之情況之 中係爲2個，但如設置1個或複數個亦無問題。 另一方面，對於夾合物5 3側係設致有因應電子紙5 1 之貫通孔30a，30b的棒狀磁性體4a，4b，並根據由此棒 狀磁性體4a，4b使貫通孔30a，30b貫穿之況，將可閱覽 或搬運，而對於棒狀磁性體4a，4b係因控制用線圈3a， 3b被捆捲著，故根據採用被裝訂之各電子紙5 1之閉環線 •16- (14) (14)200423412 圈與框體之控制用線圈之間的電磁誘導之情況，藉由從框 體至電子紙磁性來進行供電及在兩者間的信號之收送信， 而由如此之非接觸之供電及信號的收送信係例如可適用揭 示於日本特開平1 1-〇3 944〇號公報之手法’而根據使特定 之ID碼（辨識碼）含在進行收送信之信號之情況，亦可 只選擇被裝訂之複數電子紙內之希望的電子紙來改寫其內 容。 針對如此之夾合物型電子書係有著可邊適當的拆裝複 數電子紙邊進行印刷，閱覽，搬運等之效果，另外，因由 非接觸式來進行供電及信號收送信，故不需要露出於電子 紙及電子書框體部之端子部，而隨之有可提供對於可曲性 優越，並信賴性，耐久性優越之夾合物型電子書之效果。 圖8係爲表示有關本發明之主動矩陣型顯示裝置之一 例的液晶光電裝置之槪略構成圖，並此液晶光電裝置70 係作爲主要構成要素具備有設置在主動矩陣基板8 0與濾 色鏡73這些之間空間74之液晶材料，而主動矩陣基板 8 〇係於玻璃基板之外側設置偏光板7 5，於內側設置驅動 電路8 0 A，於其上方設置配向膜（略圖示），驅動電路 80A爲包含畫素電極82，資料線83和閘極線84，元件 8 1而形成。而濾色鏡7 3係成爲於玻璃基板之外側堆積偏 光板 7 1，而於內側詳細之圖示係有略示，但依序堆積 RGB濾色鏡層，外敷層，透明電極，配向膜之構造，而 對於下方之偏光板75之外側係設置有背照光76。 另外有關本發明之光電裝置係因爲爲採用有關前述之 -17- (15) (15)200423412 本發明之主動矩陣基板所製造之構成，故比較於採用以往 之主動矩陣基板來製造之光電裝置，將可謀求降低成本及 品質提升之情況，然而，在本實施型態之中係作爲主動矩 陣型顯示裝置例示有液晶光電裝置，但當然亦可適用於有 機電致發光裝置，電泳顯示裝置等之其他的光電裝置，另 外，如根據本發明，根據正確配置微小之元件最終基板的 規定位置之情況，對於基板的彎曲之追從性則將提升，又 根據採用可撓性之基板的情況，將可提供柔軟且輕，又對 彎曲強之主動矩陣基板，而更加地，亦可提供具有局面顯 示等之局面的主動矩陣基板。 並且這些光電裝置係因例如搭載於行動電話之電子機 器，故針對在本發明係可提供享受上述利點之電子機器。 【圖式簡單說明】 〔圖1〕玻璃複寫方法之工程圖。 〔圖2〕元件晶片之平面圖。 〔圖3〕爲作爲本發明之實施例的元件晶片之短邊與 ’基板被彎曲之方向爲一致之電子電路之（a)槪觀圖與 (b )元件晶片與基板之接著部分的擴大圖。 〔圖4〕爲作爲本發明之實施例的元件晶片之短邊與 ’基板被彎曲之方向爲一致之電子電路之（a)槪觀圖與 (b )元件晶片與基板之接著部分的擴大圖。 〔圖5〕表示應用本發明之薄膜元件之製造方法型態 (具備薄膜電晶體電路之基，板，有源矩陣型基板）的圖 -18 - (16) (16)200423412 〔圖6〕爲表示採用本發明所製造之薄膜元件的應用 例之第2型態（電子紙）的圖。 〔圖7〕爲表示採用本發明所製造之薄膜元件的應用 例之第2型態（電子書）的圖。 〔圖8〕爲表示有關本發明之主動矩陣型顯示裝置之 一例的液晶光電裝置之槪略構成圖。 〔符號說明〕 1 1 :第1基板 1 2 :剝離層 1 3 :機能元件 1 4 :兀件晶片 21 :第2基板 2 2 :配線 23 :墊片 3 1 :雷射 3 2 :接著劑 5 1 :電子紙 5 3 :夾合物 60 :元件（機能元件） 61 :配線 62 :配線 63 :配線 -19* (17) (17)200423412 6 4 .配線 7 0 :液晶光電裝置 7 3 :漉色鏡 8 0 :主動矩陣基板 -20

Claims (1)

  1. (1) (1)200423412 拾、申請專利範圍 1 · 一種薄膜元件之製造方法，屬於含有將包含形成 於第1之基板上之複數之機能元件之至少一個之元1件晶片 ，轉印於具有可彎曲性之第2之基板的工程的薄膜元件之 製造方法， 前述元件晶片之外形爲矩形， 前述元件晶片之短邊，和前述第2基板會彎曲之方向 爲一致者。 2. 如申請專利範圍第1項之薄膜元件之製造方法’ 其中，前述機能元件爲薄膜電晶體。 3. 一種薄膜電晶體電路基板’其特徵乃具備經由如 申請專利範圍第2項之薄膜元件之製造方法所製造之薄膜 電晶體。 4. 一種主動矩陣型顯示裝置’其特徵乃將如申請專 利範圍第3項之薄膜電晶體電路，做爲主動矩陣元件使用 者。 5 . 一種光電裝置，其特徵乃具備如申請專利範圍第 3項之薄膜電晶體電路基板者。 6. 一種電子機器，其特徵乃具備如申請專利範圍第 5項之光電裝置者。
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US20050130344A1 (en) 2005-06-16
CN100411086C (zh) 2008-08-13
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EP1443556A2 (en) 2004-08-04
KR20040069265A (ko) 2004-08-05

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