CN100363343C - 光活性化合物 - Google Patents
光活性化合物 Download PDFInfo
- Publication number
- CN100363343C CN100363343C CNB2004800133760A CN200480013376A CN100363343C CN 100363343 C CN100363343 C CN 100363343C CN B2004800133760 A CNB2004800133760 A CN B2004800133760A CN 200480013376 A CN200480013376 A CN 200480013376A CN 100363343 C CN100363343 C CN 100363343C
- Authority
- CN
- China
- Prior art keywords
- atoms
- branched alkyl
- straight
- optionally containing
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Indole Compounds (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/439,753 | 2003-05-16 | ||
| US10/439,753 US7358408B2 (en) | 2003-05-16 | 2003-05-16 | Photoactive compounds |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1791573A CN1791573A (zh) | 2006-06-21 |
| CN100363343C true CN100363343C (zh) | 2008-01-23 |
Family
ID=33417884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800133760A Expired - Fee Related CN100363343C (zh) | 2003-05-16 | 2004-05-07 | 光活性化合物 |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US7358408B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1641750A2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2007505946A (cg-RX-API-DMAC7.html) |
| KR (1) | KR20060009360A (cg-RX-API-DMAC7.html) |
| CN (1) | CN100363343C (cg-RX-API-DMAC7.html) |
| TW (1) | TW200506504A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2004101490A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050214674A1 (en) * | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| US20050271974A1 (en) * | 2004-06-08 | 2005-12-08 | Rahman M D | Photoactive compounds |
| JP2006096742A (ja) * | 2004-08-31 | 2006-04-13 | Sanshin Chem Ind Co Ltd | スルホニウム化合物 |
| JP4724465B2 (ja) * | 2005-05-23 | 2011-07-13 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| US7521170B2 (en) * | 2005-07-12 | 2009-04-21 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| US7255970B2 (en) * | 2005-07-12 | 2007-08-14 | Az Electronic Materials Usa Corp. | Photoresist composition for imaging thick films |
| US20070105040A1 (en) * | 2005-11-10 | 2007-05-10 | Toukhy Medhat A | Developable undercoating composition for thick photoresist layers |
| US7678528B2 (en) * | 2005-11-16 | 2010-03-16 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| US7601482B2 (en) * | 2006-03-28 | 2009-10-13 | Az Electronic Materials Usa Corp. | Negative photoresist compositions |
| US7524614B2 (en) * | 2006-05-26 | 2009-04-28 | Eastman Kodak Company | Negative-working radiation-sensitive compositions and imageable materials |
| JP4857208B2 (ja) * | 2006-11-10 | 2012-01-18 | 信越化学工業株式会社 | レジスト材料を用いたパターン形成方法 |
| US7491482B2 (en) * | 2006-12-04 | 2009-02-17 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| US7390613B1 (en) * | 2006-12-04 | 2008-06-24 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| US20080171270A1 (en) * | 2007-01-16 | 2008-07-17 | Munirathna Padmanaban | Polymers Useful in Photoresist Compositions and Compositions Thereof |
| US20080187868A1 (en) * | 2007-02-07 | 2008-08-07 | Munirathna Padmanaban | Photoactive Compounds |
| US8252503B2 (en) * | 2007-08-24 | 2012-08-28 | Az Electronic Materials Usa Corp. | Photoresist compositions |
| US8088548B2 (en) * | 2007-10-23 | 2012-01-03 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions |
| WO2009091224A2 (en) * | 2008-01-18 | 2009-07-23 | Lg Chem, Ltd. | Optical film, preparation method of the same, and liquid crystal display comprising the same |
| US8455176B2 (en) * | 2008-11-12 | 2013-06-04 | Az Electronic Materials Usa Corp. | Coating composition |
| US8632948B2 (en) * | 2009-09-30 | 2014-01-21 | Az Electronic Materials Usa Corp. | Positive-working photoimageable bottom antireflective coating |
| JP5820688B2 (ja) | 2011-03-23 | 2015-11-24 | 株式会社Kri | 多糖類の溶解に用いられる溶媒ならびに該溶媒を用いた成形体および多糖類誘導体の製造方法 |
| US9012126B2 (en) | 2012-06-15 | 2015-04-21 | Az Electronic Materials (Luxembourg) S.A.R.L. | Positive photosensitive material |
| US8906594B2 (en) | 2012-06-15 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working thick film photoresist |
| TWI731961B (zh) | 2016-04-19 | 2021-07-01 | 德商馬克專利公司 | 正向感光材料及形成正向凸紋影像之方法 |
| KR102261808B1 (ko) | 2016-08-09 | 2021-06-07 | 리지필드 액퀴지션 | 환경적으로 안정한 후막성 화학증폭형 레지스트 |
| JP2018109701A (ja) * | 2017-01-04 | 2018-07-12 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 化学増幅型ポジ型フォトレジスト組成物およびそれを用いたパターン形成方法 |
| KR102871189B1 (ko) | 2018-09-05 | 2025-10-14 | 메르크 파텐트 게엠베하 | 포지티브형 감광성 물질 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1033624A1 (en) * | 1998-08-07 | 2000-09-06 | Clariant International Ltd. | Radiation-sensitive composition of chemical amplification type |
| CA2299856A1 (en) * | 1999-03-11 | 2000-09-11 | Goldschmidt Ag | Ester-containing iodonium salts and their use for the radiation curing of cationically-curing materials |
| US20010036591A1 (en) * | 1999-12-21 | 2001-11-01 | Reinhard Schulz | Iodonium salts as latent acid donors |
| WO2002019033A2 (en) * | 2000-08-25 | 2002-03-07 | Shipley Company, L.L.C. | Photoacid generators and photoresists comprising same |
Family Cites Families (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1530131A (fr) * | 1966-07-01 | 1968-06-21 | Nippon Kayaku Kk | Dérivés organiques du phosphore et leurs applications, notamment comme régulateurs de la croissance des végétaux |
| US3745188A (en) * | 1971-04-19 | 1973-07-10 | Lilly Co Eli | Preparation of nitrobenzyl alcohol mesylates and tosylates |
| GB2065695B (en) * | 1979-10-12 | 1984-07-25 | Hitachi Ltd | Guest-host type liquid crystal composition and liquid crystal display device using the same |
| DE3137298A1 (de) * | 1981-09-18 | 1983-04-14 | Bayer Ag, 5090 Leverkusen | Anthrachinonfarbstoffe |
| JPH06104656B2 (ja) | 1986-06-26 | 1994-12-21 | 三新化学工業株式会社 | スルホニウム化合物およびその製造方法 |
| JPH0615480B2 (ja) | 1987-09-25 | 1994-03-02 | 三新化学工業株式会社 | アシル化剤 |
| JPH0768207B2 (ja) | 1987-09-25 | 1995-07-26 | 三新化学工業株式会社 | スルホニウム化合物 |
| DE3804316A1 (de) * | 1988-02-12 | 1989-08-24 | Merck Patent Gmbh | Verfahren zur herstellung von 1,2-disulfon-verbindungen |
| US5200544A (en) * | 1988-02-25 | 1993-04-06 | At&T Bell Laboratories | Resist materials |
| US5399596A (en) * | 1988-03-03 | 1995-03-21 | Sanshin Kagaku Kogyo Co., Ltd. | Polyfluoride sulfonium compounds and polymerization initiator thereof |
| JPH01226868A (ja) | 1988-03-08 | 1989-09-11 | Sanshin Kagaku Kogyo Kk | スルホニウム化合物及びアシル化剤 |
| DE3808927A1 (de) * | 1988-03-17 | 1989-10-05 | Ciba Geigy Ag | Negativ-fotoresists von polyimid-typ mit 1,2-disulfonen |
| JPH0737440B2 (ja) | 1988-05-17 | 1995-04-26 | 三新化学工業株式会社 | スルホニウム化合物の製造方法 |
| US5021197A (en) * | 1988-06-16 | 1991-06-04 | Mitsubishi Gas Chemical Company, Inc. | Process for production of sulfonium compounds |
| CA2014047A1 (en) | 1989-04-08 | 1990-10-08 | Yoshinari Yamamoto | Sulfonium compound and polymerization initiator comprising the sulfonium compound as the main ingredient |
| JPH02272081A (ja) | 1989-04-14 | 1990-11-06 | Fuji Photo Film Co Ltd | 機能性有機薄膜 |
| JP2709625B2 (ja) | 1989-06-14 | 1998-02-04 | 三新化学工業株式会社 | カチオン重合触媒および重合性組成物、その重合方法 |
| JP2598704B2 (ja) | 1989-07-14 | 1997-04-09 | 三新化学工業株式会社 | スルホニウム化合物の製造方法 |
| DE3924298A1 (de) * | 1989-07-22 | 1991-02-07 | Basf Ag | Neue sulfoniumsalze und deren verwendung |
| JP2782093B2 (ja) | 1989-07-27 | 1998-07-30 | 三新化学工業株式会社 | 重合性組成物 |
| JP2797025B2 (ja) | 1989-10-31 | 1998-09-17 | 三新化学工業株式会社 | ジアルキルスルホニウム化合物 |
| JP2764455B2 (ja) | 1990-04-09 | 1998-06-11 | 日本化薬株式会社 | 感熱記録材料 |
| JPH0411625A (ja) | 1990-04-27 | 1992-01-16 | Takeshi Endo | 樹脂組成物、光ディスク用オーバーコート組成物及びその硬化物 |
| JP2764771B2 (ja) * | 1991-10-01 | 1998-06-11 | 富士写真フイルム株式会社 | 感光性組成物 |
| JPH05230189A (ja) | 1992-02-25 | 1993-09-07 | Nippon Soda Co Ltd | スルホニウム塩及び増感剤を含有する硬化性組成物 |
| US6159665A (en) * | 1993-06-17 | 2000-12-12 | Lucent Technologies Inc. | Processes using photosensitive materials including a nitro benzyl ester photoacid generator |
| DE69519629T2 (de) * | 1994-03-09 | 2001-04-12 | Nippon Soda Co. Ltd., Tokio/Tokyo | Sulfoniumsalze und Polymerisationsinitiatoren |
| JPH07278273A (ja) | 1994-04-05 | 1995-10-24 | Toshiba Chem Corp | 化合物半導体装置 |
| DE4444669A1 (de) * | 1994-12-15 | 1996-06-20 | Hoechst Ag | Strahlungsempfindliches Gemisch |
| JP3679438B2 (ja) | 1995-01-10 | 2005-08-03 | 三新化学工業株式会社 | スルホニウム化合物の製造方法 |
| JPH08245764A (ja) | 1995-03-13 | 1996-09-24 | Toshiba Chem Corp | 導電性ペースト |
| JPH08245765A (ja) | 1995-03-13 | 1996-09-24 | Toshiba Chem Corp | 化合物半導体装置 |
| JP3846921B2 (ja) | 1995-07-25 | 2006-11-15 | 京セラケミカル株式会社 | 絶縁性ペースト |
| JP3547530B2 (ja) * | 1995-07-28 | 2004-07-28 | 花王株式会社 | 新規なスルホン酸又はその塩、並びにその製造法 |
| JP3587325B2 (ja) * | 1996-03-08 | 2004-11-10 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
| JPH1097075A (ja) * | 1996-06-07 | 1998-04-14 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| JPH11231536A (ja) * | 1998-02-10 | 1999-08-27 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
| US6815144B2 (en) * | 1998-04-23 | 2004-11-09 | Tokyo Ohka Kogyo Co., Ltd. | Positive-working chemical-amplification photoresist composition |
| ATE210641T1 (de) * | 1998-07-16 | 2001-12-15 | Korea Kumho Petrochem Co Ltd | Sulfoniumsalze und verfahren zu ihrer herstellung |
| JP2000047387A (ja) * | 1998-07-28 | 2000-02-18 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
| US6365322B1 (en) * | 1999-12-07 | 2002-04-02 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV radiation |
| JP2001235865A (ja) * | 2000-02-23 | 2001-08-31 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| US6749986B2 (en) * | 2000-09-08 | 2004-06-15 | Shipley Company, L.L.C. | Polymers and photoresist compositions for short wavelength imaging |
| US6749987B2 (en) * | 2000-10-20 | 2004-06-15 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
| JP4288446B2 (ja) * | 2000-10-23 | 2009-07-01 | 信越化学工業株式会社 | 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法 |
| KR100795109B1 (ko) * | 2001-02-23 | 2008-01-17 | 후지필름 가부시키가이샤 | 포지티브 감광성 조성물 |
| JP4225699B2 (ja) * | 2001-03-12 | 2009-02-18 | 富士フイルム株式会社 | ポジ型感光性組成物 |
| JP2002294196A (ja) | 2001-03-30 | 2002-10-09 | Three M Innovative Properties Co | 熱硬化性接着剤 |
| TW565748B (en) * | 2001-05-17 | 2003-12-11 | Fuji Photo Film Co Ltd | Positive radiation-sensitive composition |
| US6927009B2 (en) * | 2001-05-22 | 2005-08-09 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
| JP3912767B2 (ja) * | 2001-06-21 | 2007-05-09 | 富士フイルム株式会社 | ポジ型感光性組成物 |
| JP3907164B2 (ja) * | 2001-11-02 | 2007-04-18 | 富士フイルム株式会社 | ポジ型感光性組成物 |
| EP1319981B1 (en) * | 2001-12-13 | 2012-10-24 | FUJIFILM Corporation | Positive resist composition |
| JP4199958B2 (ja) * | 2002-06-03 | 2008-12-24 | Jsr株式会社 | 感放射線性樹脂組成物 |
| US20030235775A1 (en) | 2002-06-13 | 2003-12-25 | Munirathna Padmanaban | Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds |
-
2003
- 2003-05-16 US US10/439,753 patent/US7358408B2/en not_active Expired - Fee Related
-
2004
- 2004-04-26 TW TW093111558A patent/TW200506504A/zh unknown
- 2004-05-07 EP EP04731596A patent/EP1641750A2/en not_active Withdrawn
- 2004-05-07 JP JP2006529754A patent/JP2007505946A/ja active Pending
- 2004-05-07 KR KR1020057021882A patent/KR20060009360A/ko not_active Ceased
- 2004-05-07 CN CNB2004800133760A patent/CN100363343C/zh not_active Expired - Fee Related
- 2004-05-07 WO PCT/EP2004/004866 patent/WO2004101490A2/en not_active Ceased
-
2007
- 2007-10-18 US US11/874,276 patent/US20080096127A1/en not_active Abandoned
- 2007-10-18 US US11/874,278 patent/US20080261147A1/en not_active Abandoned
- 2007-10-18 US US11/874,294 patent/US20080058542A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1033624A1 (en) * | 1998-08-07 | 2000-09-06 | Clariant International Ltd. | Radiation-sensitive composition of chemical amplification type |
| CA2299856A1 (en) * | 1999-03-11 | 2000-09-11 | Goldschmidt Ag | Ester-containing iodonium salts and their use for the radiation curing of cationically-curing materials |
| US20010036591A1 (en) * | 1999-12-21 | 2001-11-01 | Reinhard Schulz | Iodonium salts as latent acid donors |
| WO2002019033A2 (en) * | 2000-08-25 | 2002-03-07 | Shipley Company, L.L.C. | Photoacid generators and photoresists comprising same |
Non-Patent Citations (2)
| Title |
|---|
| Eine einfache und allgemeine Methode zurHerstellungvonalpha-Disulfonen (R1SO2SO2R2). E. A. BARMANN.SYNTHESIS,Vol.5 . 1993 * |
| Photoacid and photobase generators:chemistryandapplications to polymeric materials,. M. SHIRAI, M. TSUKOOKA.PROGRESS IN POLYMER SCIENCE,Vol.21 . 1996 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004101490A2 (en) | 2004-11-25 |
| US20040229155A1 (en) | 2004-11-18 |
| WO2004101490A3 (en) | 2005-01-06 |
| US20080058542A1 (en) | 2008-03-06 |
| US20080261147A1 (en) | 2008-10-23 |
| CN1791573A (zh) | 2006-06-21 |
| EP1641750A2 (en) | 2006-04-05 |
| TW200506504A (en) | 2005-02-16 |
| US7358408B2 (en) | 2008-04-15 |
| US20080096127A1 (en) | 2008-04-24 |
| JP2007505946A (ja) | 2007-03-15 |
| KR20060009360A (ko) | 2006-01-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080123 Termination date: 20110507 |