CN100363343C - 光活性化合物 - Google Patents

光活性化合物 Download PDF

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Publication number
CN100363343C
CN100363343C CNB2004800133760A CN200480013376A CN100363343C CN 100363343 C CN100363343 C CN 100363343C CN B2004800133760 A CNB2004800133760 A CN B2004800133760A CN 200480013376 A CN200480013376 A CN 200480013376A CN 100363343 C CN100363343 C CN 100363343C
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CN
China
Prior art keywords
atoms
branched alkyl
straight
optionally containing
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2004800133760A
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English (en)
Chinese (zh)
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CN1791573A (zh
Inventor
M·D·拉曼
F·M·霍利亨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
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AZ Electronic Materials USA Corp
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Application filed by AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials USA Corp
Publication of CN1791573A publication Critical patent/CN1791573A/zh
Application granted granted Critical
Publication of CN100363343C publication Critical patent/CN100363343C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Indole Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB2004800133760A 2003-05-16 2004-05-07 光活性化合物 Expired - Fee Related CN100363343C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/439,753 2003-05-16
US10/439,753 US7358408B2 (en) 2003-05-16 2003-05-16 Photoactive compounds

Publications (2)

Publication Number Publication Date
CN1791573A CN1791573A (zh) 2006-06-21
CN100363343C true CN100363343C (zh) 2008-01-23

Family

ID=33417884

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800133760A Expired - Fee Related CN100363343C (zh) 2003-05-16 2004-05-07 光活性化合物

Country Status (7)

Country Link
US (4) US7358408B2 (cg-RX-API-DMAC7.html)
EP (1) EP1641750A2 (cg-RX-API-DMAC7.html)
JP (1) JP2007505946A (cg-RX-API-DMAC7.html)
KR (1) KR20060009360A (cg-RX-API-DMAC7.html)
CN (1) CN100363343C (cg-RX-API-DMAC7.html)
TW (1) TW200506504A (cg-RX-API-DMAC7.html)
WO (1) WO2004101490A2 (cg-RX-API-DMAC7.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US20050271974A1 (en) * 2004-06-08 2005-12-08 Rahman M D Photoactive compounds
JP2006096742A (ja) * 2004-08-31 2006-04-13 Sanshin Chem Ind Co Ltd スルホニウム化合物
JP4724465B2 (ja) * 2005-05-23 2011-07-13 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
US7521170B2 (en) * 2005-07-12 2009-04-21 Az Electronic Materials Usa Corp. Photoactive compounds
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US20070105040A1 (en) * 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
US7678528B2 (en) * 2005-11-16 2010-03-16 Az Electronic Materials Usa Corp. Photoactive compounds
US7601482B2 (en) * 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
US7524614B2 (en) * 2006-05-26 2009-04-28 Eastman Kodak Company Negative-working radiation-sensitive compositions and imageable materials
JP4857208B2 (ja) * 2006-11-10 2012-01-18 信越化学工業株式会社 レジスト材料を用いたパターン形成方法
US7491482B2 (en) * 2006-12-04 2009-02-17 Az Electronic Materials Usa Corp. Photoactive compounds
US7390613B1 (en) * 2006-12-04 2008-06-24 Az Electronic Materials Usa Corp. Photoactive compounds
US20080171270A1 (en) * 2007-01-16 2008-07-17 Munirathna Padmanaban Polymers Useful in Photoresist Compositions and Compositions Thereof
US20080187868A1 (en) * 2007-02-07 2008-08-07 Munirathna Padmanaban Photoactive Compounds
US8252503B2 (en) * 2007-08-24 2012-08-28 Az Electronic Materials Usa Corp. Photoresist compositions
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
WO2009091224A2 (en) * 2008-01-18 2009-07-23 Lg Chem, Ltd. Optical film, preparation method of the same, and liquid crystal display comprising the same
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
JP5820688B2 (ja) 2011-03-23 2015-11-24 株式会社Kri 多糖類の溶解に用いられる溶媒ならびに該溶媒を用いた成形体および多糖類誘導体の製造方法
US9012126B2 (en) 2012-06-15 2015-04-21 Az Electronic Materials (Luxembourg) S.A.R.L. Positive photosensitive material
US8906594B2 (en) 2012-06-15 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working thick film photoresist
TWI731961B (zh) 2016-04-19 2021-07-01 德商馬克專利公司 正向感光材料及形成正向凸紋影像之方法
KR102261808B1 (ko) 2016-08-09 2021-06-07 리지필드 액퀴지션 환경적으로 안정한 후막성 화학증폭형 레지스트
JP2018109701A (ja) * 2017-01-04 2018-07-12 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH 化学増幅型ポジ型フォトレジスト組成物およびそれを用いたパターン形成方法
KR102871189B1 (ko) 2018-09-05 2025-10-14 메르크 파텐트 게엠베하 포지티브형 감광성 물질

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1033624A1 (en) * 1998-08-07 2000-09-06 Clariant International Ltd. Radiation-sensitive composition of chemical amplification type
CA2299856A1 (en) * 1999-03-11 2000-09-11 Goldschmidt Ag Ester-containing iodonium salts and their use for the radiation curing of cationically-curing materials
US20010036591A1 (en) * 1999-12-21 2001-11-01 Reinhard Schulz Iodonium salts as latent acid donors
WO2002019033A2 (en) * 2000-08-25 2002-03-07 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1530131A (fr) * 1966-07-01 1968-06-21 Nippon Kayaku Kk Dérivés organiques du phosphore et leurs applications, notamment comme régulateurs de la croissance des végétaux
US3745188A (en) * 1971-04-19 1973-07-10 Lilly Co Eli Preparation of nitrobenzyl alcohol mesylates and tosylates
GB2065695B (en) * 1979-10-12 1984-07-25 Hitachi Ltd Guest-host type liquid crystal composition and liquid crystal display device using the same
DE3137298A1 (de) * 1981-09-18 1983-04-14 Bayer Ag, 5090 Leverkusen Anthrachinonfarbstoffe
JPH06104656B2 (ja) 1986-06-26 1994-12-21 三新化学工業株式会社 スルホニウム化合物およびその製造方法
JPH0615480B2 (ja) 1987-09-25 1994-03-02 三新化学工業株式会社 アシル化剤
JPH0768207B2 (ja) 1987-09-25 1995-07-26 三新化学工業株式会社 スルホニウム化合物
DE3804316A1 (de) * 1988-02-12 1989-08-24 Merck Patent Gmbh Verfahren zur herstellung von 1,2-disulfon-verbindungen
US5200544A (en) * 1988-02-25 1993-04-06 At&T Bell Laboratories Resist materials
US5399596A (en) * 1988-03-03 1995-03-21 Sanshin Kagaku Kogyo Co., Ltd. Polyfluoride sulfonium compounds and polymerization initiator thereof
JPH01226868A (ja) 1988-03-08 1989-09-11 Sanshin Kagaku Kogyo Kk スルホニウム化合物及びアシル化剤
DE3808927A1 (de) * 1988-03-17 1989-10-05 Ciba Geigy Ag Negativ-fotoresists von polyimid-typ mit 1,2-disulfonen
JPH0737440B2 (ja) 1988-05-17 1995-04-26 三新化学工業株式会社 スルホニウム化合物の製造方法
US5021197A (en) * 1988-06-16 1991-06-04 Mitsubishi Gas Chemical Company, Inc. Process for production of sulfonium compounds
CA2014047A1 (en) 1989-04-08 1990-10-08 Yoshinari Yamamoto Sulfonium compound and polymerization initiator comprising the sulfonium compound as the main ingredient
JPH02272081A (ja) 1989-04-14 1990-11-06 Fuji Photo Film Co Ltd 機能性有機薄膜
JP2709625B2 (ja) 1989-06-14 1998-02-04 三新化学工業株式会社 カチオン重合触媒および重合性組成物、その重合方法
JP2598704B2 (ja) 1989-07-14 1997-04-09 三新化学工業株式会社 スルホニウム化合物の製造方法
DE3924298A1 (de) * 1989-07-22 1991-02-07 Basf Ag Neue sulfoniumsalze und deren verwendung
JP2782093B2 (ja) 1989-07-27 1998-07-30 三新化学工業株式会社 重合性組成物
JP2797025B2 (ja) 1989-10-31 1998-09-17 三新化学工業株式会社 ジアルキルスルホニウム化合物
JP2764455B2 (ja) 1990-04-09 1998-06-11 日本化薬株式会社 感熱記録材料
JPH0411625A (ja) 1990-04-27 1992-01-16 Takeshi Endo 樹脂組成物、光ディスク用オーバーコート組成物及びその硬化物
JP2764771B2 (ja) * 1991-10-01 1998-06-11 富士写真フイルム株式会社 感光性組成物
JPH05230189A (ja) 1992-02-25 1993-09-07 Nippon Soda Co Ltd スルホニウム塩及び増感剤を含有する硬化性組成物
US6159665A (en) * 1993-06-17 2000-12-12 Lucent Technologies Inc. Processes using photosensitive materials including a nitro benzyl ester photoacid generator
DE69519629T2 (de) * 1994-03-09 2001-04-12 Nippon Soda Co. Ltd., Tokio/Tokyo Sulfoniumsalze und Polymerisationsinitiatoren
JPH07278273A (ja) 1994-04-05 1995-10-24 Toshiba Chem Corp 化合物半導体装置
DE4444669A1 (de) * 1994-12-15 1996-06-20 Hoechst Ag Strahlungsempfindliches Gemisch
JP3679438B2 (ja) 1995-01-10 2005-08-03 三新化学工業株式会社 スルホニウム化合物の製造方法
JPH08245764A (ja) 1995-03-13 1996-09-24 Toshiba Chem Corp 導電性ペースト
JPH08245765A (ja) 1995-03-13 1996-09-24 Toshiba Chem Corp 化合物半導体装置
JP3846921B2 (ja) 1995-07-25 2006-11-15 京セラケミカル株式会社 絶縁性ペースト
JP3547530B2 (ja) * 1995-07-28 2004-07-28 花王株式会社 新規なスルホン酸又はその塩、並びにその製造法
JP3587325B2 (ja) * 1996-03-08 2004-11-10 富士写真フイルム株式会社 ポジ型感光性組成物
JPH1097075A (ja) * 1996-06-07 1998-04-14 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JPH11231536A (ja) * 1998-02-10 1999-08-27 Fuji Photo Film Co Ltd ポジ型感光性組成物
US6815144B2 (en) * 1998-04-23 2004-11-09 Tokyo Ohka Kogyo Co., Ltd. Positive-working chemical-amplification photoresist composition
ATE210641T1 (de) * 1998-07-16 2001-12-15 Korea Kumho Petrochem Co Ltd Sulfoniumsalze und verfahren zu ihrer herstellung
JP2000047387A (ja) * 1998-07-28 2000-02-18 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
US6365322B1 (en) * 1999-12-07 2002-04-02 Clariant Finance (Bvi) Limited Photoresist composition for deep UV radiation
JP2001235865A (ja) * 2000-02-23 2001-08-31 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US6749986B2 (en) * 2000-09-08 2004-06-15 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP4288446B2 (ja) * 2000-10-23 2009-07-01 信越化学工業株式会社 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法
KR100795109B1 (ko) * 2001-02-23 2008-01-17 후지필름 가부시키가이샤 포지티브 감광성 조성물
JP4225699B2 (ja) * 2001-03-12 2009-02-18 富士フイルム株式会社 ポジ型感光性組成物
JP2002294196A (ja) 2001-03-30 2002-10-09 Three M Innovative Properties Co 熱硬化性接着剤
TW565748B (en) * 2001-05-17 2003-12-11 Fuji Photo Film Co Ltd Positive radiation-sensitive composition
US6927009B2 (en) * 2001-05-22 2005-08-09 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP3912767B2 (ja) * 2001-06-21 2007-05-09 富士フイルム株式会社 ポジ型感光性組成物
JP3907164B2 (ja) * 2001-11-02 2007-04-18 富士フイルム株式会社 ポジ型感光性組成物
EP1319981B1 (en) * 2001-12-13 2012-10-24 FUJIFILM Corporation Positive resist composition
JP4199958B2 (ja) * 2002-06-03 2008-12-24 Jsr株式会社 感放射線性樹脂組成物
US20030235775A1 (en) 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1033624A1 (en) * 1998-08-07 2000-09-06 Clariant International Ltd. Radiation-sensitive composition of chemical amplification type
CA2299856A1 (en) * 1999-03-11 2000-09-11 Goldschmidt Ag Ester-containing iodonium salts and their use for the radiation curing of cationically-curing materials
US20010036591A1 (en) * 1999-12-21 2001-11-01 Reinhard Schulz Iodonium salts as latent acid donors
WO2002019033A2 (en) * 2000-08-25 2002-03-07 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Eine einfache und allgemeine Methode zurHerstellungvonalpha-Disulfonen (R1SO2SO2R2). E. A. BARMANN.SYNTHESIS,Vol.5 . 1993 *
Photoacid and photobase generators:chemistryandapplications to polymeric materials,. M. SHIRAI, M. TSUKOOKA.PROGRESS IN POLYMER SCIENCE,Vol.21 . 1996 *

Also Published As

Publication number Publication date
WO2004101490A2 (en) 2004-11-25
US20040229155A1 (en) 2004-11-18
WO2004101490A3 (en) 2005-01-06
US20080058542A1 (en) 2008-03-06
US20080261147A1 (en) 2008-10-23
CN1791573A (zh) 2006-06-21
EP1641750A2 (en) 2006-04-05
TW200506504A (en) 2005-02-16
US7358408B2 (en) 2008-04-15
US20080096127A1 (en) 2008-04-24
JP2007505946A (ja) 2007-03-15
KR20060009360A (ko) 2006-01-31

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Termination date: 20110507