CN100351691C - 平板显示器中使用的薄膜晶体管的新颖导电元件 - Google Patents
平板显示器中使用的薄膜晶体管的新颖导电元件 Download PDFInfo
- Publication number
- CN100351691C CN100351691C CNB2004100287328A CN200410028732A CN100351691C CN 100351691 C CN100351691 C CN 100351691C CN B2004100287328 A CNB2004100287328 A CN B2004100287328A CN 200410028732 A CN200410028732 A CN 200410028732A CN 100351691 C CN100351691 C CN 100351691C
- Authority
- CN
- China
- Prior art keywords
- layer
- tft
- thin film
- film transistor
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012528 membrane Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000010936 titanium Substances 0.000 claims abstract description 37
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 32
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 21
- 239000004411 aluminium Substances 0.000 claims description 29
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 238000007669 thermal treatment Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 17
- 238000013461 design Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 description 15
- 101100489577 Solanum lycopersicum TFT10 gene Proteins 0.000 description 11
- 229910010038 TiAl Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 239000011147 inorganic material Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR15357/2003 | 2003-03-12 | ||
KR15357/03 | 2003-03-12 | ||
KR1020030015357A KR100669688B1 (ko) | 2003-03-12 | 2003-03-12 | 박막트랜지스터 및 이를 구비한 평판표시소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1530725A CN1530725A (zh) | 2004-09-22 |
CN100351691C true CN100351691C (zh) | 2007-11-28 |
Family
ID=32768636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100287328A Expired - Lifetime CN100351691C (zh) | 2003-03-12 | 2004-03-12 | 平板显示器中使用的薄膜晶体管的新颖导电元件 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20040183072A1 (zh) |
EP (1) | EP1458030A3 (zh) |
JP (1) | JP2004282066A (zh) |
KR (1) | KR100669688B1 (zh) |
CN (1) | CN100351691C (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4038485B2 (ja) * | 2003-03-12 | 2008-01-23 | 三星エスディアイ株式会社 | 薄膜トランジスタを備えた平板表示素子 |
US7492028B2 (en) * | 2005-02-18 | 2009-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method of the same, and a semiconductor device |
KR100799824B1 (ko) * | 2005-08-17 | 2008-01-31 | 가부시키가이샤 고베 세이코쇼 | 소스/드레인 전극, 트랜지스터 기판 및 그의 제조 방법, 및표시 디바이스 |
US7683370B2 (en) | 2005-08-17 | 2010-03-23 | Kobe Steel, Ltd. | Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices |
KR101251351B1 (ko) | 2005-12-28 | 2013-04-05 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판, 이의 제조방법 및 이를 갖는표시패널 |
KR100774950B1 (ko) * | 2006-01-19 | 2007-11-09 | 엘지전자 주식회사 | 전계발광소자 |
EP2012561A4 (en) * | 2006-04-27 | 2010-11-10 | Ulvac Inc | SCREEN AND COMPOSITE SCREEN |
JP5214858B2 (ja) | 2006-06-22 | 2013-06-19 | 三菱電機株式会社 | Tftアレイ基板及びその製造方法 |
AT12768U1 (de) | 2010-03-29 | 2012-11-15 | Ctr Carinthian Tech Res Ag | Hochtemperaturbeständige, elektrisch leitfähige dünnschichten |
JP5016712B2 (ja) * | 2010-09-21 | 2012-09-05 | 三井金属鉱業株式会社 | 電極箔および有機デバイス |
US8841733B2 (en) | 2011-05-17 | 2014-09-23 | United Microelectronics Corp. | Semiconductor device and method of fabricating the same |
JP2013084907A (ja) * | 2011-09-28 | 2013-05-09 | Kobe Steel Ltd | 表示装置用配線構造 |
CN104685635B (zh) * | 2012-10-01 | 2017-05-17 | 夏普株式会社 | 半导体装置 |
EP2993963A4 (en) * | 2013-05-01 | 2016-12-14 | Konica Minolta Inc | ORGANIC ELECTROLUMINESCENT ELEMENT |
PL3082634T3 (pl) * | 2013-12-18 | 2021-10-18 | Novoxel Ltd. | Urządzenie do odparowywania tkanek |
TWI535034B (zh) * | 2014-01-29 | 2016-05-21 | 友達光電股份有限公司 | 畫素結構及其製作方法 |
US9548349B2 (en) * | 2014-06-25 | 2017-01-17 | International Business Machines Corporation | Semiconductor device with metal extrusion formation |
CN104241392B (zh) * | 2014-07-14 | 2017-07-14 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、显示基板和显示设备 |
CN106531768A (zh) * | 2016-12-07 | 2017-03-22 | 厦门天马微电子有限公司 | 一种有机电致发光显示面板及其制备方法 |
KR20190043194A (ko) * | 2017-10-17 | 2019-04-26 | 삼성디스플레이 주식회사 | 금속 배선 및 이를 포함하는 박막 트랜지스터 |
KR20200089789A (ko) | 2019-01-17 | 2020-07-28 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR20200093100A (ko) | 2019-01-25 | 2020-08-05 | 삼성디스플레이 주식회사 | 표시 장치용 도전선, 이를 포함하는 표시 장치, 및 이를 포함하는 표시 장치의 제조 방법 |
KR20200100890A (ko) * | 2019-02-18 | 2020-08-27 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1223015A (zh) * | 1997-03-31 | 1999-07-14 | 精工爱普生株式会社 | 显示装置 |
CN1342964A (zh) * | 2000-09-04 | 2002-04-03 | 株式会社半导体能源研究所 | 驱动场致发光显示装置的方法 |
CN1351322A (zh) * | 2000-10-27 | 2002-05-29 | 株式会社半导体能源研究所 | 显示器件及其驱动方法 |
CN1361510A (zh) * | 2000-12-29 | 2002-07-31 | 三星Sdi株式会社 | 有机电发光显示器及其驱动方法和像素电路 |
Family Cites Families (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4153529A (en) * | 1975-04-21 | 1979-05-08 | Hughes Aircraft Company | Means and method for inducing uniform parallel alignment of liquid crystal material in a liquid crystal cell |
DE8232492U1 (de) * | 1982-11-19 | 1986-03-27 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle aus amorphem Silizium |
US5278099A (en) * | 1985-05-13 | 1994-01-11 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device having wiring electrodes |
US4646424A (en) * | 1985-08-02 | 1987-03-03 | General Electric Company | Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors |
US4933296A (en) * | 1985-08-02 | 1990-06-12 | General Electric Company | N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays |
US4782380A (en) * | 1987-01-22 | 1988-11-01 | Advanced Micro Devices, Inc. | Multilayer interconnection for integrated circuit structure having two or more conductive metal layers |
US4910580A (en) * | 1987-08-27 | 1990-03-20 | Siemens Aktiengesellschaft | Method for manufacturing a low-impedance, planar metallization composed of aluminum or of an aluminum alloy |
US4778258A (en) * | 1987-10-05 | 1988-10-18 | General Electric Company | Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays |
JPH0666287B2 (ja) * | 1988-07-25 | 1994-08-24 | 富士通株式会社 | 半導体装置の製造方法 |
US5244820A (en) * | 1990-03-09 | 1993-09-14 | Tadashi Kamata | Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method |
US5243202A (en) * | 1990-04-25 | 1993-09-07 | Casio Computer Co., Ltd. | Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type |
US5345108A (en) * | 1991-02-26 | 1994-09-06 | Nec Corporation | Semiconductor device having multi-layer electrode wiring |
JP2533414B2 (ja) * | 1991-04-09 | 1996-09-11 | 三菱電機株式会社 | 半導体集積回路装置の配線接続構造およびその製造方法 |
US5485019A (en) * | 1992-02-05 | 1996-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
JP3587537B2 (ja) * | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JPH06188265A (ja) * | 1992-12-22 | 1994-07-08 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPH06250211A (ja) * | 1993-02-23 | 1994-09-09 | Hitachi Ltd | 液晶表示基板とその製造方法 |
US5427666A (en) * | 1993-09-09 | 1995-06-27 | Applied Materials, Inc. | Method for in-situ cleaning a Ti target in a Ti + TiN coating process |
DE19515564B4 (de) * | 1994-04-28 | 2008-07-03 | Denso Corp., Kariya | Elektrode für ein Halbleiterbauelement und Verfahren zur Herstellung derselben |
US5742468A (en) * | 1994-10-24 | 1998-04-21 | Olympus Optical Co., Ltd. | Electric charge generator for use in an apparatus for producing an electrostatic latent image |
US5538921A (en) * | 1994-12-22 | 1996-07-23 | At&T Corp. | Integrated circuit fabrication |
US6790714B2 (en) * | 1995-07-03 | 2004-09-14 | Sanyo Electric Co., Ltd. | Semiconductor device, display device and method of fabricating the same |
JP3744980B2 (ja) * | 1995-07-27 | 2006-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US5747879A (en) * | 1995-09-29 | 1998-05-05 | Intel Corporation | Interface between titanium and aluminum-alloy in metal stack for integrated circuit |
JP2850850B2 (ja) * | 1996-05-16 | 1999-01-27 | 日本電気株式会社 | 半導体装置の製造方法 |
US5759916A (en) * | 1996-06-24 | 1998-06-02 | Taiwan Semiconductor Manufacturing Company Ltd | Method for forming a void-free titanium nitride anti-reflective coating(ARC) layer upon an aluminum containing conductor layer |
US20010043175A1 (en) * | 1996-10-22 | 2001-11-22 | Masahiro Yasukawa | Liquid crystal panel substrate, liquid crystal panel, and electronic equipment and projection type display device both using the same |
JP3480791B2 (ja) * | 1996-12-25 | 2003-12-22 | 三菱電機株式会社 | 薄膜トランジスタの製造方法 |
US5943601A (en) * | 1997-04-30 | 1999-08-24 | International Business Machines Corporation | Process for fabricating a metallization structure |
US6028003A (en) * | 1997-07-03 | 2000-02-22 | Motorola, Inc. | Method of forming an interconnect structure with a graded composition using a nitrided target |
US5893752A (en) * | 1997-12-22 | 1999-04-13 | Motorola, Inc. | Process for forming a semiconductor device |
DE19734434C1 (de) * | 1997-08-08 | 1998-12-10 | Siemens Ag | Halbleiterkörper mit Rückseitenmetallisierung und Verfahren zu deren Herstellung |
JP3221373B2 (ja) * | 1997-10-24 | 2001-10-22 | 日本電気株式会社 | 積層配線のパターニング方法 |
JPH11186190A (ja) * | 1997-12-25 | 1999-07-09 | Sharp Corp | 半導体装置の製造方法 |
JP3980156B2 (ja) * | 1998-02-26 | 2007-09-26 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置 |
KR100301530B1 (ko) * | 1998-06-30 | 2001-10-19 | 한신혁 | 반도체소자의 층간 절연막 형성방법 |
EP0986084A3 (en) * | 1998-09-11 | 2004-01-21 | Pioneer Corporation | Electron emission device and display apparatus using the same |
JP2000150520A (ja) * | 1998-11-10 | 2000-05-30 | Internatl Business Mach Corp <Ibm> | 相互接続部、及び相互接続部の製造方法 |
US6410986B1 (en) * | 1998-12-22 | 2002-06-25 | Agere Systems Guardian Corp. | Multi-layered titanium nitride barrier structure |
US6380625B2 (en) * | 1999-01-13 | 2002-04-30 | Advanced Micro Devices, Inc. | Semiconductor interconnect barrier and manufacturing method thereof |
JP3916334B2 (ja) * | 1999-01-13 | 2007-05-16 | シャープ株式会社 | 薄膜トランジスタ |
US6534393B1 (en) * | 1999-01-25 | 2003-03-18 | Chartered Semiconductor Manufacturing Ltd. | Method for fabricating local metal interconnections with low contact resistance and gate electrodes with improved electrical conductivity |
US6224942B1 (en) * | 1999-08-19 | 2001-05-01 | Micron Technology, Inc. | Method of forming an aluminum comprising line having a titanium nitride comprising layer thereon |
JP2001060590A (ja) * | 1999-08-20 | 2001-03-06 | Denso Corp | 半導体装置の電気配線及びその製造方法 |
JP2001147424A (ja) * | 1999-11-19 | 2001-05-29 | Hitachi Ltd | 導電性薄膜形成用の絶縁基板およびこの絶縁基板を用いた液晶表示素子 |
JP2001250956A (ja) * | 2000-03-08 | 2001-09-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US6365927B1 (en) * | 2000-04-03 | 2002-04-02 | Symetrix Corporation | Ferroelectric integrated circuit having hydrogen barrier layer |
TW447138B (en) * | 2000-04-28 | 2001-07-21 | Unipac Optoelectronics Corp | Manufacturing method of thin-film transistor |
TW538246B (en) * | 2000-06-05 | 2003-06-21 | Semiconductor Energy Lab | Display panel, display panel inspection method, and display panel manufacturing method |
US6503641B2 (en) * | 2000-12-18 | 2003-01-07 | International Business Machines Corporation | Interconnects with Ti-containing liners |
JP2002202527A (ja) * | 2000-12-28 | 2002-07-19 | Nec Corp | アクティブマトリクス型液晶表示装置 |
TW490857B (en) * | 2001-02-05 | 2002-06-11 | Samsung Electronics Co Ltd | Thin film transistor array substrate for liquid crystal display and method of fabricating same |
US6440752B1 (en) * | 2001-03-26 | 2002-08-27 | Sharp Laboratories Of America, Inc. | Electrode materials with improved hydrogen degradation resistance and fabrication method |
KR100374228B1 (ko) * | 2001-03-28 | 2003-03-03 | 주식회사 하이닉스반도체 | 금속배선 형성 방법 |
JP2003015105A (ja) * | 2001-06-28 | 2003-01-15 | Hitachi Ltd | 画像表示装置 |
JP2003017706A (ja) * | 2001-07-02 | 2003-01-17 | Idemitsu Kosan Co Ltd | Tft基板、それを用いた液晶表示装置及びその製造方法 |
EP1343206B1 (en) * | 2002-03-07 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus |
JP4334811B2 (ja) * | 2002-03-28 | 2009-09-30 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
-
2003
- 2003-03-12 KR KR1020030015357A patent/KR100669688B1/ko active IP Right Grant
-
2004
- 2004-01-30 US US10/767,281 patent/US20040183072A1/en not_active Abandoned
- 2004-02-18 EP EP04250862A patent/EP1458030A3/en not_active Withdrawn
- 2004-03-09 JP JP2004066092A patent/JP2004282066A/ja active Pending
- 2004-03-12 CN CNB2004100287328A patent/CN100351691C/zh not_active Expired - Lifetime
-
2005
- 2005-09-06 US US11/218,496 patent/US20060011914A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1223015A (zh) * | 1997-03-31 | 1999-07-14 | 精工爱普生株式会社 | 显示装置 |
CN1342964A (zh) * | 2000-09-04 | 2002-04-03 | 株式会社半导体能源研究所 | 驱动场致发光显示装置的方法 |
CN1351322A (zh) * | 2000-10-27 | 2002-05-29 | 株式会社半导体能源研究所 | 显示器件及其驱动方法 |
CN1361510A (zh) * | 2000-12-29 | 2002-07-31 | 三星Sdi株式会社 | 有机电发光显示器及其驱动方法和像素电路 |
Also Published As
Publication number | Publication date |
---|---|
US20040183072A1 (en) | 2004-09-23 |
US20060011914A1 (en) | 2006-01-19 |
KR100669688B1 (ko) | 2007-01-18 |
JP2004282066A (ja) | 2004-10-07 |
EP1458030A3 (en) | 2006-03-15 |
EP1458030A2 (en) | 2004-09-15 |
KR20040080531A (ko) | 2004-09-20 |
CN1530725A (zh) | 2004-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100351691C (zh) | 平板显示器中使用的薄膜晶体管的新颖导电元件 | |
CN101369634B (zh) | 发光器件及其制造方法 | |
CN1246824C (zh) | 显示器 | |
CN100470842C (zh) | 有源矩阵型有机电致发光显示装置及其制造方法 | |
US8173460B2 (en) | Control circuit for stacked OLED device | |
CN1636235A (zh) | 有源矩阵型有机电致发光显示装置及其制造方法 | |
CN1440224A (zh) | 有源矩阵型有机电致发光显示器及其制造方法 | |
CN1503602A (zh) | 有机电致发光显示面板装置及其制造方法 | |
CN1615059A (zh) | 全彩电致发光显示器 | |
CN1525799A (zh) | 电场发光显示装置的激光修复方法 | |
CN1700821A (zh) | 电致发光显示装置及其制造方法 | |
CN1694585A (zh) | 有机电致发光器件及其制造方法 | |
CN103280539A (zh) | 有机发光二极管结构、制作其的方法及显示面板 | |
US7592635B2 (en) | Organic electroluminescent device | |
CN1479559A (zh) | 有机电致发光显示装置及其制造方法 | |
GB2393314A (en) | Display and method for manufacturing the same | |
CN100419550C (zh) | 平板显示器中使用的薄膜晶体管所用的新颖导电材料 | |
CN1582078A (zh) | 顶部发光型有源矩阵场致发光设备及其制造方法 | |
CN1992333A (zh) | 双板有机电致发光器件及其制造方法 | |
TW201027480A (en) | Connected display pixel drive chiplets | |
KR100844004B1 (ko) | 유기전계발광 소자용 투명 도전막의 제조 방법 | |
CN107799660A (zh) | 显示基板及其制作方法、驱动方法、显示面板和显示装置 | |
KR100899428B1 (ko) | 유기전계발광표시장치 및 그의 제조 방법 | |
CN1484477A (zh) | 有机电致发光显示器件及其制造方法 | |
CN1638567A (zh) | 有机电致发光显示器件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090116 Address after: Gyeonggi Do Korea Suwon Patentee after: Samsung Mobile Display Co.,Ltd. Address before: Gyeonggi Do Korea Suwon Patentee before: Samsung SDI Co.,Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090116 |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20120928 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120928 Address after: Gyeonggi Do Korea Suwon Patentee after: SAMSUNG DISPLAY Co.,Ltd. Address before: Gyeonggi Do Korea Suwon Patentee before: Samsung Mobile Display Co.,Ltd. |
|
CX01 | Expiry of patent term |
Granted publication date: 20071128 |
|
CX01 | Expiry of patent term |