CH633126A5 - Non-linear resistance element and a method for its production - Google Patents
Non-linear resistance element and a method for its production Download PDFInfo
- Publication number
- CH633126A5 CH633126A5 CH695676A CH695676A CH633126A5 CH 633126 A5 CH633126 A5 CH 633126A5 CH 695676 A CH695676 A CH 695676A CH 695676 A CH695676 A CH 695676A CH 633126 A5 CH633126 A5 CH 633126A5
- Authority
- CH
- Switzerland
- Prior art keywords
- mixture
- resistance
- mol
- insulating coating
- resistance element
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 238000000576 coating method Methods 0.000 claims description 80
- 239000011248 coating agent Substances 0.000 claims description 79
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 65
- 239000000203 mixture Substances 0.000 claims description 40
- 239000011521 glass Substances 0.000 claims description 29
- 239000011787 zinc oxide Substances 0.000 claims description 28
- 238000010304 firing Methods 0.000 claims description 27
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000011230 binding agent Substances 0.000 claims description 12
- 229910052596 spinel Inorganic materials 0.000 claims description 10
- 239000011029 spinel Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- ZOIVSVWBENBHNT-UHFFFAOYSA-N dizinc;silicate Chemical compound [Zn+2].[Zn+2].[O-][Si]([O-])([O-])[O-] ZOIVSVWBENBHNT-UHFFFAOYSA-N 0.000 claims description 6
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 2
- 238000003746 solid phase reaction Methods 0.000 claims description 2
- 238000010671 solid-state reaction Methods 0.000 claims description 2
- 239000011265 semifinished product Substances 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910000416 bismuth oxide Inorganic materials 0.000 claims 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 1
- 235000011837 pasties Nutrition 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 79
- 239000010410 layer Substances 0.000 description 38
- 239000011810 insulating material Substances 0.000 description 36
- 239000007858 starting material Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 17
- 230000008859 change Effects 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- 230000008602 contraction Effects 0.000 description 10
- 239000004593 Epoxy Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 239000000047 product Substances 0.000 description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 229920003002 synthetic resin Polymers 0.000 description 5
- 239000000057 synthetic resin Substances 0.000 description 5
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 4
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 4
- 238000001354 calcination Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229920001249 ethyl cellulose Polymers 0.000 description 4
- 235000019325 ethyl cellulose Nutrition 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 229910052844 willemite Inorganic materials 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910020169 SiOa Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000007431 microscopic evaluation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- -1 zinc orthosilicate compound Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/102—Varistor boundary, e.g. surface layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
- Details Of Resistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50124603A JPS5249491A (en) | 1975-10-16 | 1975-10-16 | Non-linear resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH633126A5 true CH633126A5 (en) | 1982-11-15 |
Family
ID=14889515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH695676A CH633126A5 (en) | 1975-10-16 | 1976-06-02 | Non-linear resistance element and a method for its production |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5249491A (enrdf_load_stackoverflow) |
| CH (1) | CH633126A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2607454C3 (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5654002A (en) * | 1979-10-08 | 1981-05-13 | Hitachi Ltd | Voltage nonlinear resistor |
| SE455143B (sv) * | 1980-03-19 | 1988-06-20 | Meidensha Electric Mfg Co Ltd | Sett att framstella en icke-linjer, spenningsberoende resistor |
| JPS57178303A (en) * | 1981-04-28 | 1982-11-02 | Mitsubishi Electric Corp | Method of forming protective coating layer for voltage nonlinear resistor |
| JPS6254404A (ja) * | 1985-05-24 | 1987-03-10 | 株式会社東芝 | 非直線抵抗体の製造方法 |
| JPS62237703A (ja) * | 1986-04-09 | 1987-10-17 | 日本碍子株式会社 | 電圧非直線抵抗体の製造法 |
| JPS63136603A (ja) * | 1986-11-28 | 1988-06-08 | 日本碍子株式会社 | 電圧非直線抵抗体の製造方法 |
| JPH0812812B2 (ja) * | 1989-03-02 | 1996-02-07 | 日本碍子株式会社 | 電圧非直線抵抗体の製造方法 |
| JP2854387B2 (ja) * | 1990-06-04 | 1999-02-03 | 三菱電機株式会社 | 酸化亜鉛形避雷器素子の製法 |
| DE10110680A1 (de) * | 2001-03-06 | 2002-10-02 | Epcos Ag | Elektrisches Bauelement |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5113486A (ja) * | 1974-07-24 | 1976-02-02 | Ikegai Iron Works Ltd | Kosakukikainoshujikujikukesochi |
| JPS51134860A (en) * | 1975-05-19 | 1976-11-22 | Matsushita Electric Ind Co Ltd | Voltage nonnlinear resistor element and method of making same |
| JPS5346275A (en) * | 1976-10-08 | 1978-04-25 | Hitachi Ltd | Printed mark erasing method |
-
1975
- 1975-10-16 JP JP50124603A patent/JPS5249491A/ja active Granted
-
1976
- 1976-02-24 DE DE19762607454 patent/DE2607454C3/de not_active Expired
- 1976-06-02 CH CH695676A patent/CH633126A5/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2607454C3 (de) | 1979-09-27 |
| JPS5249491A (en) | 1977-04-20 |
| AU1076076A (en) | 1977-08-25 |
| DE2607454A1 (de) | 1977-04-21 |
| DE2607454B2 (de) | 1979-02-01 |
| JPS5548441B2 (enrdf_load_stackoverflow) | 1980-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| AEN | Scope or validity of the patent modified | ||
| PL | Patent ceased | ||
| PL | Patent ceased |