CA2560701C - Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices - Google Patents
Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices Download PDFInfo
- Publication number
- CA2560701C CA2560701C CA2560701A CA2560701A CA2560701C CA 2560701 C CA2560701 C CA 2560701C CA 2560701 A CA2560701 A CA 2560701A CA 2560701 A CA2560701 A CA 2560701A CA 2560701 C CA2560701 C CA 2560701C
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- Prior art keywords
- light
- substrate
- light active
- adhesive
- semiconductor elements
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 625
- 239000000758 substrate Substances 0.000 claims abstract description 678
- 238000000034 method Methods 0.000 claims abstract description 273
- 239000000463 material Substances 0.000 claims abstract description 185
- 238000004519 manufacturing process Methods 0.000 claims abstract description 166
- 239000012943 hotmelt Substances 0.000 claims abstract description 95
- 238000003475 lamination Methods 0.000 claims abstract description 67
- 230000008569 process Effects 0.000 claims abstract description 44
- 239000000853 adhesive Substances 0.000 claims description 378
- 230000001070 adhesive effect Effects 0.000 claims description 378
- 239000010410 layer Substances 0.000 claims description 262
- 239000004020 conductor Substances 0.000 claims description 199
- 238000012546 transfer Methods 0.000 claims description 119
- 238000004891 communication Methods 0.000 claims description 107
- 239000011248 coating agent Substances 0.000 claims description 57
- 238000000576 coating method Methods 0.000 claims description 57
- 239000011149 active material Substances 0.000 claims description 46
- 229920001940 conductive polymer Polymers 0.000 claims description 43
- 230000005855 radiation Effects 0.000 claims description 43
- 238000007639 printing Methods 0.000 claims description 38
- 239000012790 adhesive layer Substances 0.000 claims description 29
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 229920000642 polymer Polymers 0.000 claims description 23
- 230000003213 activating effect Effects 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 10
- 238000007646 gravure printing Methods 0.000 claims description 9
- 238000007641 inkjet printing Methods 0.000 claims description 9
- 238000007648 laser printing Methods 0.000 claims description 9
- 230000009471 action Effects 0.000 claims description 8
- 238000006555 catalytic reaction Methods 0.000 claims description 8
- 238000003847 radiation curing Methods 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 239000004831 Hot glue Substances 0.000 abstract description 68
- 239000011159 matrix material Substances 0.000 description 70
- 238000010276 construction Methods 0.000 description 43
- 239000002390 adhesive tape Substances 0.000 description 38
- 239000000470 constituent Substances 0.000 description 36
- 239000011368 organic material Substances 0.000 description 30
- 229910000679 solder Inorganic materials 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 238000001228 spectrum Methods 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 23
- 238000006116 polymerization reaction Methods 0.000 description 21
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 18
- 229920000139 polyethylene terephthalate Polymers 0.000 description 17
- 239000005020 polyethylene terephthalate Substances 0.000 description 17
- 239000000654 additive Substances 0.000 description 16
- 230000032258 transport Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 239000011521 glass Substances 0.000 description 14
- 239000012530 fluid Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 229920003023 plastic Polymers 0.000 description 13
- 239000004033 plastic Substances 0.000 description 13
- -1 polyethylene Polymers 0.000 description 13
- 239000002800 charge carrier Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 239000007787 solid Substances 0.000 description 12
- 230000002708 enhancing effect Effects 0.000 description 10
- 239000000155 melt Substances 0.000 description 10
- 238000012856 packing Methods 0.000 description 10
- 239000005518 polymer electrolyte Substances 0.000 description 10
- 229920000547 conjugated polymer Polymers 0.000 description 9
- 239000011888 foil Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 7
- 239000003792 electrolyte Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 229920000123 polythiophene Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 230000003750 conditioning effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000000016 photochemical curing Methods 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000007764 slot die coating Methods 0.000 description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 239000002003 electrode paste Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 125000001997 phenyl group Chemical class [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920002959 polymer blend Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 238000010420 art technique Methods 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229920006037 cross link polymer Polymers 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 239000003623 enhancer Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920005596 polymer binder Polymers 0.000 description 2
- 239000002491 polymer binding agent Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000013464 silicone adhesive Substances 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ICSNLGPSRYBMBD-UHFFFAOYSA-N 2-aminopyridine Chemical compound NC1=CC=CC=N1 ICSNLGPSRYBMBD-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 description 1
- 241000282412 Homo Species 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 241001000605 Semia Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009503 electrostatic coating Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011874 heated mixture Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- LCCNCVORNKJIRZ-UHFFFAOYSA-N parathion Chemical compound CCOP(=S)(OCC)OC1=CC=C([N+]([O-])=O)C=C1 LCCNCVORNKJIRZ-UHFFFAOYSA-N 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000004636 vulcanized rubber Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
- B32B37/1207—Heat-activated adhesive
- B32B2037/1215—Hot-melt adhesive
- B32B2037/1223—Hot-melt adhesive film-shaped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/18—Handling of layers or the laminate
- B32B2038/1891—Using a robot for handling the layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2305/00—Condition, form or state of the layers or laminate
- B32B2305/34—Inserts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
- B32B37/20—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of continuous webs only
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
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Applications Claiming Priority (13)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55695904P | 2004-03-29 | 2004-03-29 | |
US60/556,959 | 2004-03-29 | ||
US10/919,915 US7294961B2 (en) | 2004-03-29 | 2004-08-17 | Photo-radiation source provided with emissive particles dispersed in a charge-transport matrix |
US10/919,830 | 2004-08-17 | ||
US10/920,010 US7217956B2 (en) | 2004-03-29 | 2004-08-17 | Light active sheet material |
US10/919,915 | 2004-08-17 | ||
US10/919,830 US7052924B2 (en) | 2004-03-29 | 2004-08-17 | Light active sheet and methods for making the same |
US10/920,010 | 2004-08-17 | ||
US11/029,129 US7259030B2 (en) | 2004-03-29 | 2005-01-04 | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
US11/029,137 | 2005-01-04 | ||
US11/029,137 US7427782B2 (en) | 2004-03-29 | 2005-01-04 | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
US11/029,129 | 2005-01-04 | ||
PCT/US2005/010051 WO2005099310A2 (en) | 2004-03-29 | 2005-03-26 | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2560701A1 CA2560701A1 (en) | 2005-10-20 |
CA2560701C true CA2560701C (en) | 2016-10-18 |
Family
ID=35125798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2560701A Expired - Fee Related CA2560701C (en) | 2004-03-29 | 2005-03-26 | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1736035A4 (es) |
JP (1) | JP2007531321A (es) |
KR (1) | KR100880812B1 (es) |
AU (1) | AU2005232074A1 (es) |
CA (1) | CA2560701C (es) |
MX (1) | MXPA06011114A (es) |
WO (1) | WO2005099310A2 (es) |
Cited By (1)
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TWI718923B (zh) * | 2020-04-08 | 2021-02-11 | 台灣愛司帝科技股份有限公司 | 發光二極體晶片結構以及晶片移轉系統與方法 |
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US7557367B2 (en) | 2004-06-04 | 2009-07-07 | The Board Of Trustees Of The University Of Illinois | Stretchable semiconductor elements and stretchable electrical circuits |
DE102005055293A1 (de) | 2005-08-05 | 2007-02-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip |
FR2892594B1 (fr) * | 2005-10-21 | 2007-12-07 | Saint Gobain | Structure lumineuse comportant au moins une diode electroluminescente, sa fabrication et ses applications |
US8173519B2 (en) | 2006-03-03 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
DE202006007482U1 (de) * | 2006-05-10 | 2006-07-20 | Sentner, Thomas | Leuchtmöbel |
DE102007004303A1 (de) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement und Bauelement-Verbund |
US8017220B2 (en) * | 2006-10-04 | 2011-09-13 | Corning Incorporated | Electronic device and method of making |
JP2008141026A (ja) * | 2006-12-04 | 2008-06-19 | Sony Corp | 電子機器及びその製造方法、並びに、発光ダイオード表示装置及びその製造方法 |
CN102176486B (zh) | 2007-01-17 | 2015-06-24 | 伊利诺伊大学评议会 | 通过基于印刷的组装制造的光学系统 |
ES2536919T3 (es) | 2007-01-18 | 2015-05-29 | Polytron Technologies, Inc. | Estructura plana de un aparato de iluminación con diodos emisores de luz |
EP3848970A1 (en) | 2007-01-22 | 2021-07-14 | Cree, Inc. | Multiple light emitting diode emitter |
DE102007004304A1 (de) | 2007-01-29 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
EP1953837A3 (de) * | 2007-01-31 | 2014-01-15 | OSRAM Opto Semiconductors GmbH | Halbleiterbauelement mit einer optisch aktiven Schicht, Anordnung mit einer Vielzahl von optisch aktiven Schichten und Verfahren zur Herstellung eines Halbleiterbauelements |
DE102007008524A1 (de) * | 2007-02-21 | 2008-08-28 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Chip mit mindestens einem Halbleiterkörper |
JP5162979B2 (ja) * | 2007-06-28 | 2013-03-13 | 日亜化学工業株式会社 | 発光装置 |
DE102007041896A1 (de) | 2007-09-04 | 2009-03-05 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
EP2058582B1 (de) * | 2007-11-12 | 2015-04-22 | Siteco Beleuchtungstechnik GmbH | LED-Leuchte |
DE102008030815A1 (de) * | 2008-06-30 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen |
US8886334B2 (en) | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
US8389862B2 (en) | 2008-10-07 | 2013-03-05 | Mc10, Inc. | Extremely stretchable electronics |
JP5646492B2 (ja) | 2008-10-07 | 2014-12-24 | エムシー10 インコーポレイテッドMc10,Inc. | 伸縮可能な集積回路およびセンサアレイを有する装置 |
DE102009007430A1 (de) * | 2009-02-04 | 2010-08-12 | Osram Gesellschaft mit beschränkter Haftung | Leuchtmodul |
KR101870690B1 (ko) | 2009-05-12 | 2018-06-25 | 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 | 변형가능 및 반투과 디스플레이를 위한 초박형, 미세구조 무기발광다이오드의 인쇄 어셈블리 |
GB2472047B (en) | 2009-07-22 | 2011-08-10 | Novalia Ltd | Packaging or mounting a component |
JP4914929B2 (ja) * | 2009-10-15 | 2012-04-11 | シャープ株式会社 | 発光装置およびその製造方法 |
US8872214B2 (en) | 2009-10-19 | 2014-10-28 | Sharp Kabushiki Kaisha | Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device |
JP2011096901A (ja) * | 2009-10-30 | 2011-05-12 | Kitagawa Ind Co Ltd | フレキシブルledモジュール及び単体ledモジュール |
US9936574B2 (en) | 2009-12-16 | 2018-04-03 | The Board Of Trustees Of The University Of Illinois | Waterproof stretchable optoelectronics |
JP5670051B2 (ja) * | 2009-12-25 | 2015-02-18 | 日亜化学工業株式会社 | 半導体発光装置及びその製造方法 |
DE102010018260A1 (de) | 2010-01-29 | 2011-08-04 | OSRAM Opto Semiconductors GmbH, 93055 | Beleuchtungsvorrichtung |
KR101159782B1 (ko) | 2010-02-05 | 2012-06-26 | 신왕균 | 투명 엘이디 웨이퍼 모듈 및 그 제조방법 |
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- 2005-03-26 WO PCT/US2005/010051 patent/WO2005099310A2/en active Application Filing
- 2005-03-26 KR KR1020067022659A patent/KR100880812B1/ko not_active IP Right Cessation
- 2005-03-26 EP EP05729912A patent/EP1736035A4/en not_active Withdrawn
- 2005-03-26 MX MXPA06011114A patent/MXPA06011114A/es active IP Right Grant
- 2005-03-26 CA CA2560701A patent/CA2560701C/en not_active Expired - Fee Related
- 2005-03-26 JP JP2007506288A patent/JP2007531321A/ja active Pending
- 2005-03-26 AU AU2005232074A patent/AU2005232074A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
WO2005099310A2 (en) | 2005-10-20 |
EP1736035A2 (en) | 2006-12-27 |
KR20070011419A (ko) | 2007-01-24 |
JP2007531321A (ja) | 2007-11-01 |
WO2005099310A3 (en) | 2007-03-15 |
KR100880812B1 (ko) | 2009-01-30 |
CA2560701A1 (en) | 2005-10-20 |
EP1736035A4 (en) | 2009-01-07 |
MXPA06011114A (es) | 2007-01-25 |
AU2005232074A1 (en) | 2005-10-20 |
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