CA2010298A1 - Transistor en couches minces - Google Patents
Transistor en couches mincesInfo
- Publication number
- CA2010298A1 CA2010298A1 CA2010298A CA2010298A CA2010298A1 CA 2010298 A1 CA2010298 A1 CA 2010298A1 CA 2010298 A CA2010298 A CA 2010298A CA 2010298 A CA2010298 A CA 2010298A CA 2010298 A1 CA2010298 A1 CA 2010298A1
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor layer
- making
- thin film
- layer
- buffer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 4
- 230000032683 aging Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1038069A JP2839529B2 (ja) | 1989-02-17 | 1989-02-17 | 薄膜トランジスタ |
JP38069/89 | 1989-02-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2010298A1 true CA2010298A1 (fr) | 1990-08-17 |
CA2010298C CA2010298C (fr) | 1993-06-29 |
Family
ID=12515202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002010298A Expired - Fee Related CA2010298C (fr) | 1989-02-17 | 1990-02-16 | Transistor en couches minces |
Country Status (5)
Country | Link |
---|---|
US (1) | US5101242A (fr) |
EP (1) | EP0383743B1 (fr) |
JP (1) | JP2839529B2 (fr) |
CA (1) | CA2010298C (fr) |
DE (1) | DE69008386T2 (fr) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11147322A (ja) * | 1997-08-29 | 1999-06-02 | Seiko Epson Corp | プリンタ |
JP2004284367A (ja) * | 1997-08-29 | 2004-10-14 | Seiko Epson Corp | プリンタ |
US6180495B1 (en) * | 1998-04-03 | 2001-01-30 | Motorola, Inc. | Silicon carbide transistor and method therefor |
KR100583421B1 (ko) * | 2004-01-29 | 2006-05-24 | 실리콘 디스플레이 (주) | 유기 발광 다이오드에 사용하는 화소 회로 및 그를이용하는 표시장치 |
US7655127B2 (en) * | 2006-11-27 | 2010-02-02 | 3M Innovative Properties Company | Method of fabricating thin film transistor |
US20100158875A1 (en) * | 2006-12-18 | 2010-06-24 | University Of Pittsburgh - Of The Commonwealth System Of Higher Education | Muscle derived cells for the treatment of gastro-esophageal pathologies and methods of making and using the same |
JP5311957B2 (ja) * | 2007-10-23 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
JP5311955B2 (ja) * | 2007-11-01 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
TWI481029B (zh) | 2007-12-03 | 2015-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
US7812348B2 (en) * | 2008-02-29 | 2010-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistor and display device |
US7786485B2 (en) | 2008-02-29 | 2010-08-31 | Semicondutor Energy Laboratory Co., Ltd. | Thin-film transistor and display device |
US7968880B2 (en) * | 2008-03-01 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and display device |
US7821012B2 (en) * | 2008-03-18 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
JP5411528B2 (ja) | 2008-03-18 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及び表示装置 |
KR101635625B1 (ko) * | 2008-04-18 | 2016-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 그 제작 방법 |
JP5416460B2 (ja) * | 2008-04-18 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタおよび薄膜トランジスタの作製方法 |
KR101455317B1 (ko) * | 2008-04-18 | 2014-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 그 제작 방법 |
US8053294B2 (en) | 2008-04-21 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film |
JP5436017B2 (ja) * | 2008-04-25 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5542364B2 (ja) | 2008-04-25 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US8049215B2 (en) * | 2008-04-25 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
US8039842B2 (en) * | 2008-05-22 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and display device including thin film transistor |
WO2009157573A1 (fr) * | 2008-06-27 | 2009-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Transistor à couche mince, dispositif semi-conducteur et dispositif électronique |
EP2291856A4 (fr) * | 2008-06-27 | 2015-09-23 | Semiconductor Energy Lab | Transistor à couche mince |
US9000441B2 (en) * | 2008-08-05 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US8283667B2 (en) | 2008-09-05 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
JP5498762B2 (ja) * | 2008-11-17 | 2014-05-21 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US8436350B2 (en) * | 2009-01-30 | 2013-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device using an oxide semiconductor with a plurality of metal clusters |
CN103730515B (zh) | 2009-03-09 | 2016-08-17 | 株式会社半导体能源研究所 | 半导体器件 |
US9018109B2 (en) * | 2009-03-10 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor including silicon nitride layer and manufacturing method thereof |
JP5888802B2 (ja) | 2009-05-28 | 2016-03-22 | 株式会社半導体エネルギー研究所 | トランジスタを有する装置 |
KR101836067B1 (ko) * | 2009-12-21 | 2018-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터와 그 제작 방법 |
TWI535028B (zh) * | 2009-12-21 | 2016-05-21 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
US8299467B2 (en) * | 2009-12-28 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and fabrication method thereof |
US8476744B2 (en) | 2009-12-28 | 2013-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with channel including microcrystalline and amorphous semiconductor regions |
US8704230B2 (en) | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9230826B2 (en) | 2010-08-26 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Etching method using mixed gas and method for manufacturing semiconductor device |
TWI538218B (zh) | 2010-09-14 | 2016-06-11 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
US8338240B2 (en) | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
JP2013125782A (ja) * | 2011-12-13 | 2013-06-24 | Hitachi Ltd | 酸化物半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5914675A (ja) * | 1982-07-16 | 1984-01-25 | Nec Corp | 薄膜トランジスタ− |
JPS6066864A (ja) * | 1983-09-22 | 1985-04-17 | Seiko Instr & Electronics Ltd | Mis型薄膜トランジスタ |
EP0166261A3 (fr) * | 1984-06-27 | 1989-01-11 | Energy Conversion Devices, Inc. | Dispositifs semi-conducteurs à induction par champ statique |
JPS6132471A (ja) * | 1984-07-25 | 1986-02-15 | Hitachi Ltd | 薄膜トランジスタ |
JPS6187371A (ja) * | 1984-10-05 | 1986-05-02 | Hitachi Ltd | 薄膜半導体装置 |
JPS6189672A (ja) * | 1984-10-09 | 1986-05-07 | Agency Of Ind Science & Technol | 薄膜トランジスタ |
JPS61125083A (ja) * | 1984-11-21 | 1986-06-12 | Hitachi Maxell Ltd | 薄膜トランジスタおよびその製造方法 |
JPS61220369A (ja) * | 1985-03-26 | 1986-09-30 | Agency Of Ind Science & Technol | 薄膜電界効果素子 |
JPS62122275A (ja) * | 1985-11-22 | 1987-06-03 | Mitsubishi Electric Corp | Mis型半導体装置 |
JPS62282464A (ja) * | 1986-05-30 | 1987-12-08 | Seiko Instr & Electronics Ltd | 埋込みチヤンネル型薄膜トランジスタ |
JPS631072A (ja) * | 1986-06-20 | 1988-01-06 | Toshiba Corp | 薄膜電界効果トランジスタ |
JPS63258072A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 電界効果トランジスタ |
-
1989
- 1989-02-17 JP JP1038069A patent/JP2839529B2/ja not_active Expired - Fee Related
-
1990
- 1990-02-13 EP EP90850065A patent/EP0383743B1/fr not_active Expired - Lifetime
- 1990-02-13 DE DE69008386T patent/DE69008386T2/de not_active Expired - Fee Related
- 1990-02-16 CA CA002010298A patent/CA2010298C/fr not_active Expired - Fee Related
- 1990-02-20 US US07/481,255 patent/US5101242A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH02218166A (ja) | 1990-08-30 |
DE69008386T2 (de) | 1994-11-24 |
CA2010298C (fr) | 1993-06-29 |
EP0383743B1 (fr) | 1994-04-27 |
US5101242A (en) | 1992-03-31 |
DE69008386D1 (de) | 1994-06-01 |
JP2839529B2 (ja) | 1998-12-16 |
EP0383743A2 (fr) | 1990-08-22 |
EP0383743A3 (en) | 1990-11-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |