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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW82108372ApriorityCriticalpatent/TW224536B/en
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One type of high speed field effect transistor suitable for applied fixedvoltage consists of: 1. transistor with source, drain and channel area between source and drain; 2. gate set in the channel area between source and drain and coupled withthe above fixed voltage to form electric field in the channel area It features that the gate set includes: 1. the first insulating layer on the channel area between source and drain 2. main gate on the first insulating layer and coupled with the abovefixed voltage; 3. the second insulating layer on the side of main gate toward to thesource area and channel area; 4. side spacer gate on the second insulating layer and coupled with themain gate through the second insulating layer to form the electricfield on the channel area.
TW82108372A1993-10-081993-10-08High speed field effect transistor
TW224536B
(en)