BR112012023255A2 - método para preparar uma estrutura fotoabsorvente contendo calcogênio e dispositivo fotovoltaico - Google Patents

método para preparar uma estrutura fotoabsorvente contendo calcogênio e dispositivo fotovoltaico

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Publication number
BR112012023255A2
BR112012023255A2 BR112012023255A BR112012023255A BR112012023255A2 BR 112012023255 A2 BR112012023255 A2 BR 112012023255A2 BR 112012023255 A BR112012023255 A BR 112012023255A BR 112012023255 A BR112012023255 A BR 112012023255A BR 112012023255 A2 BR112012023255 A2 BR 112012023255A2
Authority
BR
Brazil
Prior art keywords
photoabsorbent
calcogen
preparing
photovoltaic device
photovoltaic
Prior art date
Application number
BR112012023255A
Other languages
English (en)
Inventor
Jennifer E Gerbi
Original Assignee
Dow Global Technologies Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Global Technologies Llc filed Critical Dow Global Technologies Llc
Publication of BR112012023255A2 publication Critical patent/BR112012023255A2/pt

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5866—Treatment with sulfur, selenium or tellurium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
BR112012023255A 2010-03-17 2011-03-14 método para preparar uma estrutura fotoabsorvente contendo calcogênio e dispositivo fotovoltaico BR112012023255A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31484010P 2010-03-17 2010-03-17
PCT/US2011/028310 WO2011115887A1 (en) 2010-03-17 2011-03-14 Photoelectronically active, chalcogen-based thin film structures incorporating tie layers

Publications (1)

Publication Number Publication Date
BR112012023255A2 true BR112012023255A2 (pt) 2016-05-17

Family

ID=43975196

Family Applications (2)

Application Number Title Priority Date Filing Date
BR112012023397A BR112012023397A2 (pt) 2010-03-17 2011-03-14 método para produzir uma composição fotoabsorvente contendo calcogeneto, dispositivo fotovoltaico e película de precursor de um material fotoabsorvente contendo calcogeneto
BR112012023255A BR112012023255A2 (pt) 2010-03-17 2011-03-14 método para preparar uma estrutura fotoabsorvente contendo calcogênio e dispositivo fotovoltaico

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BR112012023397A BR112012023397A2 (pt) 2010-03-17 2011-03-14 método para produzir uma composição fotoabsorvente contendo calcogeneto, dispositivo fotovoltaico e película de precursor de um material fotoabsorvente contendo calcogeneto

Country Status (10)

Country Link
US (4) US8969720B2 (pt)
EP (2) EP2548217B1 (pt)
JP (2) JP5837564B2 (pt)
KR (2) KR20130016281A (pt)
CN (2) CN102893370B (pt)
BR (2) BR112012023397A2 (pt)
MX (2) MX2012010733A (pt)
SG (2) SG184088A1 (pt)
TW (2) TWI510664B (pt)
WO (2) WO2011115887A1 (pt)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170236710A1 (en) * 2007-09-05 2017-08-17 Ascent Solar Technologies, Inc. Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers
US9159851B2 (en) * 2010-05-26 2015-10-13 The University Of Toledo Photovoltaic structures having a light scattering interface layer and methods of making the same
JP4937379B2 (ja) * 2010-06-11 2012-05-23 昭和シェル石油株式会社 薄膜太陽電池
KR101504343B1 (ko) * 2010-10-15 2015-03-20 한국전자통신연구원 화합물 반도체 태양전지의 제조방법
ES2620286T3 (es) * 2011-03-21 2017-06-28 Sunlight Photonics Inc. Formación de películas finas en múltiples fases para dispositivos fotovoltaicos
US9018032B2 (en) * 2012-04-13 2015-04-28 Tsmc Solar Ltd. CIGS solar cell structure and method for fabricating the same
US8809674B2 (en) * 2012-04-25 2014-08-19 Guardian Industries Corp. Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same
US8809109B2 (en) * 2012-05-21 2014-08-19 Stion Corporation Method and structure for eliminating edge peeling in thin-film photovoltaic absorber materials
US9177876B2 (en) * 2012-08-27 2015-11-03 Intermolecular, Inc. Optical absorbers
WO2014042319A1 (ko) * 2012-09-17 2014-03-20 한국생산기술연구원 Ｃｉｓ/ｃｇｓ/ｃｉｇｓ 박막 제조방법 및 이를 이용하여 제조된 태양전지
US9112095B2 (en) 2012-12-14 2015-08-18 Intermolecular, Inc. CIGS absorber formed by co-sputtered indium
US9899561B2 (en) * 2012-12-20 2018-02-20 Bengbu Design & Research Institute For Glass Industry Method for producing a compound semiconductor, and thin-film solar cell
US9196768B2 (en) * 2013-03-15 2015-11-24 Jehad A. Abushama Method and apparatus for depositing copper—indium—gallium selenide (CuInGaSe2-CIGS) thin films and other materials on a substrate
FR3006109B1 (fr) * 2013-05-24 2016-09-16 Commissariat Energie Atomique Procede de realisation de la jonction p-n d'une cellule photovoltaique en couches minces et procede d'obtention correspondant d'une cellule photovoltaique.
SG11201700604RA (en) * 2014-07-24 2017-02-27 Agency Science Tech & Res Process for depositing metal or metalloid chalcogenides
US9947531B2 (en) 2015-01-12 2018-04-17 NuvoSun, Inc. High rate sputter deposition of alkali metal-containing precursor films useful to fabricate chalcogenide semiconductors
US20160233322A1 (en) * 2015-02-06 2016-08-11 G-Force Nanotechnology Ltd. Method for fabricating chalcogenide films
JP2018523920A (ja) 2015-08-05 2018-08-23 ダウ グローバル テクノロジーズ エルエルシー カルコゲニド含有光電変換光吸収層を含む光電変換素子及び光電変換素子を形成する関連方法
US11183605B2 (en) * 2017-04-19 2021-11-23 (Cnbm) Bengbu Design Research Institute For Glass Industry Co. Ltd Method for producing a layer structure for thin-film solar cells using etching or laser ablation to produce rear-electrode-layer-free region
CN108305906B (zh) * 2018-02-08 2019-09-03 北京铂阳顶荣光伏科技有限公司 太阳能电池吸收层的制备方法和太阳能电池的制备方法
CN108493768A (zh) * 2018-04-10 2018-09-04 中国科学院半导体研究所 脊型波导结构激光器p型电极的制备方法
CN110649121A (zh) * 2018-06-11 2020-01-03 北京铂阳顶荣光伏科技有限公司 一种太阳能电池吸收层及其制备方法、太阳能电池
KR102295733B1 (ko) * 2018-08-09 2021-08-31 한양대학교 에리카산학협력단 광전기화학 구조체 및 그 제조 방법, 그리고 광전기화학 소자.
KR102665745B1 (ko) * 2018-11-01 2024-05-14 한국전자통신연구원 반도체 소자 및 이의 제조 방법

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3887650T2 (de) 1987-11-27 1994-08-04 Siemens Solar Ind Lp Herstellungsverfahren einer Dünnschichtsonnenzelle.
US5439575A (en) 1988-06-30 1995-08-08 Board Of Trustees Of The University Of Illinois Hybrid method for depositing semi-conductive materials
US4915745A (en) 1988-09-22 1990-04-10 Atlantic Richfield Company Thin film solar cell and method of making
US5028274A (en) 1989-06-07 1991-07-02 International Solar Electric Technology, Inc. Group I-III-VI2 semiconductor films for solar cell application
JP2719039B2 (ja) * 1990-09-21 1998-02-25 株式会社富士電機総合研究所 ＣｕＩｎＳｅ▲下２▼系化合物薄膜の形成方法
JPH05234894A (ja) * 1991-12-26 1993-09-10 Fuji Electric Co Ltd カルコパイライト型化合物薄膜の製造方法および製造装置
JPH07258881A (ja) * 1994-03-23 1995-10-09 Yazaki Corp ＣｕＩｎＳｅ２ 膜の製造方法
JPH07326577A (ja) 1994-06-01 1995-12-12 Matsushita Electric Ind Co Ltd カルコパイライト構造半導体薄膜の製造方法
US5674555A (en) 1995-11-30 1997-10-07 University Of Delaware Process for preparing group Ib-IIIa-VIa semiconducting films
EP0977911A4 (en) 1997-04-21 2002-05-22 Davis Joseph & Negley PREPARATION OF LAYERS OF A PRECURSOR CONSISTING OF COPPER-INDIUM-GALLIUM DISELENIURE BY ELECTRODEPOSITION FOR MANUFACTURING HIGH-EFFICIENCY PHOTOPILES
US6323417B1 (en) 1998-09-29 2001-11-27 Lockheed Martin Corporation Method of making I-III-VI semiconductor materials for use in photovoltaic cells
AU2249201A (en) 1999-11-16 2001-05-30 Midwest Research Institute A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2
JP3811825B2 (ja) 2001-07-06 2006-08-23 本田技研工業株式会社 光吸収層の形成方法
EP1556902A4 (en) 2002-09-30 2009-07-29 Miasole MANUFACTURING DEVICE AND METHOD FOR PRODUCING THIN FILM SOLAR CELLS IN A LARGE SCALE
JP4365638B2 (ja) 2003-07-01 2009-11-18 住友ゴム工業株式会社 タイヤ用の束撚り金属コード、及びそれを用いた空気入りタイヤ
DK1654769T4 (en) 2003-08-14 2018-05-22 Univ Johannesburg PROCEDURE FOR MANUFACTURING QUATERNARY OR HIGHER ALloy semiconductor films from groups IB-IIIA-VIA
US7604843B1 (en) * 2005-03-16 2009-10-20 Nanosolar, Inc. Metallic dispersion
US7605328B2 (en) 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
US7736940B2 (en) 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
US7833821B2 (en) 2005-10-24 2010-11-16 Solopower, Inc. Method and apparatus for thin film solar cell manufacturing
US7632701B2 (en) 2006-05-08 2009-12-15 University Of Central Florida Research Foundation, Inc. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor
US7867551B2 (en) 2006-09-21 2011-01-11 Solopower, Inc. Processing method for group IBIIIAVIA semiconductor layer growth
US20090050208A1 (en) 2006-10-19 2009-02-26 Basol Bulent M Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer
US20080105542A1 (en) 2006-11-08 2008-05-08 Purdy Clifford C System and method of manufacturing sputtering targets
DE102006055662B3 (de) 2006-11-23 2008-06-26 Gfe Metalle Und Materialien Gmbh Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen
DE102006057068B3 (de) 2006-11-29 2008-05-15 Hahn-Meitner-Institut Berlin Gmbh Reaktives Magnetron-Sputtern zur großflächigen Abscheidung von Chalkopyrit-Absorberschichten für Dünnschichtsolarzellen
US8197703B2 (en) 2007-04-25 2012-06-12 Solopower, Inc. Method and apparatus for affecting surface composition of CIGS absorbers formed by two-stage process
US20080289953A1 (en) 2007-05-22 2008-11-27 Miasole High rate sputtering apparatus and method
WO2009051862A2 (en) 2007-06-19 2009-04-23 Van Duren Jeroen K J Semiconductor thin films formed from non-spherical particles
US8258001B2 (en) 2007-10-26 2012-09-04 Solopower, Inc. Method and apparatus for forming copper indium gallium chalcogenide layers
US8779283B2 (en) * 2007-11-29 2014-07-15 General Electric Company Absorber layer for thin film photovoltaics and a solar cell made therefrom
JP2009231744A (ja) * 2008-03-25 2009-10-08 Showa Denko Kk Ｉ−ｉｉｉ−ｖｉ族カルコパイライト型薄膜系太陽電池およびその製造方法
JP5052697B2 (ja) * 2009-09-29 2012-10-17 京セラ株式会社 光電変換装置
WO2011090728A2 (en) 2009-12-28 2011-07-28 David Jackrel Low cost solar cells formed using a chalcogenization rate modifier
CN101768729B (zh) * 2010-03-05 2012-10-31 中国科学院上海硅酸盐研究所 磁控溅射法制备铜铟镓硒薄膜太阳电池光吸收层的方法
WO2011108033A1 (ja) * 2010-03-05 2011-09-09 株式会社 東芝 化合物薄膜太陽電池及びその製造方法

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CN102893370B (zh) 2015-12-16
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KR20130016283A (ko) 2013-02-14
SG184088A1 (en) 2012-10-30
CN102893370A (zh) 2013-01-23
US8993882B2 (en) 2015-03-31
US8969720B2 (en) 2015-03-03
JP2013522910A (ja) 2013-06-13
US9911887B2 (en) 2018-03-06
BR112012023397A2 (pt) 2016-06-07
TWI510664B (zh) 2015-12-01
KR101761098B1 (ko) 2017-07-25
WO2011115887A1 (en) 2011-09-22
CN102893371B (zh) 2016-09-28
TW201139716A (en) 2011-11-16
EP2548217A1 (en) 2013-01-23
MX2012010733A (es) 2012-12-17
US20170263797A1 (en) 2017-09-14
US20110226336A1 (en) 2011-09-22
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EP2548217B1 (en) 2017-04-19
US20150179860A1 (en) 2015-06-25
JP2013522159A (ja) 2013-06-13
JP5956418B2 (ja) 2016-07-27
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