SG11201700604RA - Process for depositing metal or metalloid chalcogenides - Google Patents

Process for depositing metal or metalloid chalcogenides

Info

Publication number
SG11201700604RA
SG11201700604RA SG11201700604RA SG11201700604RA SG11201700604RA SG 11201700604R A SG11201700604R A SG 11201700604RA SG 11201700604R A SG11201700604R A SG 11201700604RA SG 11201700604R A SG11201700604R A SG 11201700604RA SG 11201700604R A SG11201700604R A SG 11201700604RA
Authority
SG
Singapore
Prior art keywords
depositing metal
chalcogenides
metalloid
metalloid chalcogenides
depositing
Prior art date
Application number
SG11201700604RA
Inventor
Jianwei Chai
Junguang Tao
Shijie Wang
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Priority to SG11201700604RA priority Critical patent/SG11201700604RA/en
Publication of SG11201700604RA publication Critical patent/SG11201700604RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
SG11201700604RA 2014-07-24 2015-07-23 Process for depositing metal or metalloid chalcogenides SG11201700604RA (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG11201700604RA SG11201700604RA (en) 2014-07-24 2015-07-23 Process for depositing metal or metalloid chalcogenides

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SG10201404379Q 2014-07-24
PCT/SG2015/050231 WO2016013984A1 (en) 2014-07-24 2015-07-23 Process for depositing metal or metalloid chalcogenides
SG11201700604RA SG11201700604RA (en) 2014-07-24 2015-07-23 Process for depositing metal or metalloid chalcogenides

Publications (1)

Publication Number Publication Date
SG11201700604RA true SG11201700604RA (en) 2017-02-27

Family

ID=55163400

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201700604RA SG11201700604RA (en) 2014-07-24 2015-07-23 Process for depositing metal or metalloid chalcogenides

Country Status (3)

Country Link
US (1) US20170218498A1 (en)
SG (1) SG11201700604RA (en)
WO (1) WO2016013984A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018087281A1 (en) * 2016-11-11 2018-05-17 Danmarks Tekniske Universitet Fabrication of large-area multi-element two-dimensional materials
US11257663B2 (en) 2017-09-11 2022-02-22 Agency For Science, Technology And Research Sputtering system and method
GB201911790D0 (en) 2019-08-16 2019-10-02 Univ Southampton method and compostion
US20220199405A1 (en) * 2020-12-18 2022-06-23 Osram Opto Semiconductors Gmbh Method for Producing a Semiconductor Body, A Semiconductor Body and an Optoelectronic Device
RU2765222C1 (en) * 2020-12-30 2022-01-26 Тхе Баттериес Сп. з о.о. METHOD FOR FORMING A LiCoO2 FILM AND APPARATUS FOR IMPLEMENTATION THEREOF

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5370778A (en) * 1992-11-19 1994-12-06 Iowa State University Research Foundation, Inc. Method for preparing basal oriented molybdenum disulfide (MoS2) thin films
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
WO2003090319A1 (en) * 2002-04-22 2003-10-30 Yazaki Corporation Electrical connectors incorporating low friction coatings and methods for making them
WO2008127935A1 (en) * 2007-04-13 2008-10-23 The Board Of Trustees Of The University Of Illinois Metal complex compositions and methods for making metal-containing films
MX2012010732A (en) * 2010-03-17 2013-04-03 Dow Global Technologies Llc Photoelectronically active, chalcogen-based thin film structures incorporating tie layers.
WO2012012376A1 (en) * 2010-07-22 2012-01-26 First Solar, Inc Deposition system
US8734619B1 (en) * 2011-03-02 2014-05-27 Hanergy Holding Group Ltd. Method of sensing local sputtering target selenization

Also Published As

Publication number Publication date
US20170218498A1 (en) 2017-08-03
WO2016013984A1 (en) 2016-01-28

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