SG11201607671YA - Methods for forming metal organic tungsten for middle of the line (mol) applications - Google Patents

Methods for forming metal organic tungsten for middle of the line (mol) applications

Info

Publication number
SG11201607671YA
SG11201607671YA SG11201607671YA SG11201607671YA SG11201607671YA SG 11201607671Y A SG11201607671Y A SG 11201607671YA SG 11201607671Y A SG11201607671Y A SG 11201607671YA SG 11201607671Y A SG11201607671Y A SG 11201607671YA SG 11201607671Y A SG11201607671Y A SG 11201607671YA
Authority
SG
Singapore
Prior art keywords
mol
applications
methods
line
metal organic
Prior art date
Application number
SG11201607671YA
Inventor
Liqi Wu
Sang Ho Yu
Kazuya Daito
Kie Jin Park
Kai Wu
David Thompson
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201607671YA publication Critical patent/SG11201607671YA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201607671YA 2014-04-11 2015-03-13 Methods for forming metal organic tungsten for middle of the line (mol) applications SG11201607671YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461978540P 2014-04-11 2014-04-11
US14/300,773 US9653352B2 (en) 2014-04-11 2014-06-10 Methods for forming metal organic tungsten for middle of the line (MOL) applications
PCT/US2015/020503 WO2015156957A1 (en) 2014-04-11 2015-03-13 Methods for forming metal organic tungsten for middle of the line (mol) applications

Publications (1)

Publication Number Publication Date
SG11201607671YA true SG11201607671YA (en) 2016-10-28

Family

ID=54265681

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201607671YA SG11201607671YA (en) 2014-04-11 2015-03-13 Methods for forming metal organic tungsten for middle of the line (mol) applications

Country Status (6)

Country Link
US (1) US9653352B2 (en)
KR (1) KR102345466B1 (en)
CN (1) CN106133878B (en)
SG (1) SG11201607671YA (en)
TW (1) TWI669407B (en)
WO (1) WO2015156957A1 (en)

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US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
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JP6273257B2 (en) 2012-03-27 2018-01-31 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ Feature filling with tungsten
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9685370B2 (en) * 2014-12-18 2017-06-20 Globalfoundries Inc. Titanium tungsten liner used with copper interconnects
US9595466B2 (en) 2015-03-20 2017-03-14 Applied Materials, Inc. Methods for etching via atomic layer deposition (ALD) cycles
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
KR20180075701A (en) * 2015-11-25 2018-07-04 어플라이드 머티어리얼스, 인코포레이티드 Methods for forming low-resistance contacts through integrated process flow systems
US10043607B2 (en) * 2016-05-02 2018-08-07 International Business Machines Corporation Electrolessly formed high resistivity magnetic materials
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR102234559B1 (en) * 2016-12-15 2021-03-31 어플라이드 머티어리얼스, 인코포레이티드 Gap-filled ALD process without nucleation
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
US10886123B2 (en) * 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
KR20190042461A (en) * 2017-10-14 2019-04-24 어플라이드 머티어리얼스, 인코포레이티드 Integration of ald copper with high temperature pvd copper deposition for beol interconnect
SG11202101796RA (en) * 2018-10-29 2021-05-28 Applied Materials Inc Linerless continuous amorphous metal films
JP2022510428A (en) 2018-12-05 2022-01-26 ラム リサーチ コーポレーション Void-free low stress filling
US11244903B2 (en) * 2019-12-30 2022-02-08 Micron Technology, Inc. Tungsten structures and methods of forming the structures
US11955381B2 (en) * 2020-06-22 2024-04-09 Applied Materials, Inc. Low-temperature plasma pre-clean for selective gap fill

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Also Published As

Publication number Publication date
CN106133878B (en) 2020-02-14
WO2015156957A1 (en) 2015-10-15
TWI669407B (en) 2019-08-21
KR20160144452A (en) 2016-12-16
US20150294906A1 (en) 2015-10-15
CN106133878A (en) 2016-11-16
TW201610202A (en) 2016-03-16
KR102345466B1 (en) 2021-12-29
US9653352B2 (en) 2017-05-16

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