SG11201700606YA - Structure for radio-frequency applications - Google Patents

Structure for radio-frequency applications

Info

Publication number
SG11201700606YA
SG11201700606YA SG11201700606YA SG11201700606YA SG11201700606YA SG 11201700606Y A SG11201700606Y A SG 11201700606YA SG 11201700606Y A SG11201700606Y A SG 11201700606YA SG 11201700606Y A SG11201700606Y A SG 11201700606YA SG 11201700606Y A SG11201700606Y A SG 11201700606YA
Authority
SG
Singapore
Prior art keywords
radio
frequency applications
applications
frequency
Prior art date
Application number
SG11201700606YA
Inventor
Oleg Kononchuk
Den Daele William Van
Eric Desbonnets
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201700606YA publication Critical patent/SG11201700606YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/802—Drive or control circuitry or methods for piezoelectric or electrostrictive devices not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
SG11201700606YA 2014-08-01 2015-07-03 Structure for radio-frequency applications SG11201700606YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1401800A FR3024587B1 (en) 2014-08-01 2014-08-01 METHOD FOR MANUFACTURING HIGHLY RESISTIVE STRUCTURE
PCT/FR2015/051854 WO2016016532A1 (en) 2014-08-01 2015-07-03 Structure for radio-frequency applications

Publications (1)

Publication Number Publication Date
SG11201700606YA true SG11201700606YA (en) 2017-02-27

Family

ID=52102706

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201900450PA SG10201900450PA (en) 2014-08-01 2015-07-03 Structure for radio-frequency applications
SG11201700606YA SG11201700606YA (en) 2014-08-01 2015-07-03 Structure for radio-frequency applications

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201900450PA SG10201900450PA (en) 2014-08-01 2015-07-03 Structure for radio-frequency applications

Country Status (8)

Country Link
US (2) USRE49365E1 (en)
EP (1) EP3175477B1 (en)
JP (1) JP6643316B2 (en)
KR (1) KR102403499B1 (en)
CN (1) CN106575637B (en)
FR (1) FR3024587B1 (en)
SG (2) SG10201900450PA (en)
WO (1) WO2016016532A1 (en)

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CN107275197A (en) * 2016-04-08 2017-10-20 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof
EP4009361A1 (en) * 2016-12-05 2022-06-08 GlobalWafers Co., Ltd. High resistivity silicon-on-insulator structure
FR3062238A1 (en) * 2017-01-26 2018-07-27 Soitec SUPPORT FOR A SEMICONDUCTOR STRUCTURE
FR3062517B1 (en) * 2017-02-02 2019-03-15 Soitec STRUCTURE FOR RADIO FREQUENCY APPLICATION
FR3063854B1 (en) * 2017-03-13 2021-08-27 Commissariat Energie Atomique SAW RESONATOR WITH PARASITE WAVE ATTENUATION LAYERS
US10784348B2 (en) 2017-03-23 2020-09-22 Qualcomm Incorporated Porous semiconductor handle substrate
US10134837B1 (en) * 2017-06-30 2018-11-20 Qualcomm Incorporated Porous silicon post processing
US10224396B1 (en) 2017-11-20 2019-03-05 Globalfoundries Inc. Deep trench isolation structures
WO2019111893A1 (en) * 2017-12-06 2019-06-13 株式会社村田製作所 Acoustic wave device
FR3079661A1 (en) * 2018-03-29 2019-10-04 Soitec METHOD FOR MANUFACTURING SUBSTRATE FOR RADIO FREQUENCY FILTER
FR3079662B1 (en) * 2018-03-30 2020-02-28 Soitec SUBSTRATE FOR RADIO FREQUENCY APPLICATIONS AND MANUFACTURING METHOD THEREOF
WO2020008116A1 (en) * 2018-07-05 2020-01-09 Soitec Substrate for an integrated radiofrequency device, and process for manufacturing same
US10658474B2 (en) * 2018-08-14 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming thin semiconductor-on-insulator (SOI) substrates
DE102018131946A1 (en) 2018-12-12 2020-06-18 RF360 Europe GmbH Thin film SAW device
FR3098342B1 (en) 2019-07-02 2021-06-04 Soitec Silicon On Insulator semiconductor structure comprising a buried porous layer, for RF applications
CN114207782A (en) 2019-07-19 2022-03-18 Iqe公开有限公司 Semiconductor material with adjustable dielectric constant and adjustable thermal conductivity
EP3840033A1 (en) * 2019-12-17 2021-06-23 Commissariat à l'énergie atomique et aux énergies alternatives Method for manufacturing an rf-soi substrate with trapping layer from a crystalline transformation of an embedded layer
FR3105574B1 (en) * 2019-12-19 2023-01-13 Commissariat Energie Atomique Semiconductor-on-insulator type multilayer stack, associated production process, and radiofrequency module comprising it
CN113629182A (en) * 2020-05-08 2021-11-09 济南晶正电子科技有限公司 TC-SAW composite substrate and preparation method thereof

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JP2994837B2 (en) 1992-01-31 1999-12-27 キヤノン株式会社 Semiconductor substrate flattening method, semiconductor substrate manufacturing method, and semiconductor substrate
JP4623451B2 (en) 1997-07-30 2011-02-02 忠弘 大見 Semiconductor substrate and manufacturing method thereof
EP0895282A3 (en) * 1997-07-30 2000-01-26 Canon Kabushiki Kaisha Method of preparing a SOI substrate by using a bonding process, and SOI substrate produced by the same
EP0969522A1 (en) * 1998-07-03 2000-01-05 Interuniversitair Microelektronica Centrum Vzw A thin-film opto-electronic device and a method of making it
US6180497B1 (en) * 1998-07-23 2001-01-30 Canon Kabushiki Kaisha Method for producing semiconductor base members
JP2004014841A (en) * 2002-06-07 2004-01-15 Fujitsu Ltd Semiconductor device and its manufacturing method
JP4434592B2 (en) 2003-01-14 2010-03-17 キヤノン株式会社 device
US20040152276A1 (en) 2003-01-14 2004-08-05 Naoki Nishimura Device, and substrate on which circuit and antenna are formed
EP1665367A2 (en) 2003-09-26 2006-06-07 Universite Catholique De Louvain Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses
TWI243496B (en) * 2003-12-15 2005-11-11 Canon Kk Piezoelectric film element, method of manufacturing the same, and liquid discharge head
JP2005340327A (en) * 2004-05-25 2005-12-08 Renesas Technology Corp Semiconductor device and its manufacturing method
JP2006229282A (en) 2005-02-15 2006-08-31 Kyocera Corp Thin film bulk acoustic wave resonator, filter, and communication apparatus
US7410883B2 (en) * 2005-04-13 2008-08-12 Corning Incorporated Glass-based semiconductor on insulator structures and methods of making same
FR2967812B1 (en) * 2010-11-19 2016-06-10 S O I Tec Silicon On Insulator Tech ELECTRONIC DEVICE FOR RADIOFREQUENCY OR POWER APPLICATIONS AND METHOD OF MANUFACTURING SUCH A DEVICE
US8481405B2 (en) * 2010-12-24 2013-07-09 Io Semiconductor, Inc. Trap rich layer with through-silicon-vias in semiconductor devices
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FR2977075A1 (en) * 2011-06-23 2012-12-28 Soitec Silicon On Insulator METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR SUBSTRATE
FR2977070A1 (en) * 2011-06-23 2012-12-28 Soitec Silicon On Insulator METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE COMPRISING POROUS SILICON, AND SEMICONDUCTOR SUBSTRATE
US20140212982A1 (en) * 2013-01-29 2014-07-31 University Of Saskatchewan Methods of selectively detecting the presence of a compound in a gaseous medium

Also Published As

Publication number Publication date
FR3024587B1 (en) 2018-01-26
FR3024587A1 (en) 2016-02-05
JP6643316B2 (en) 2020-02-12
USRE49365E1 (en) 2023-01-10
CN106575637B (en) 2019-11-19
KR102403499B1 (en) 2022-05-31
EP3175477A1 (en) 2017-06-07
WO2016016532A1 (en) 2016-02-04
US20170221839A1 (en) 2017-08-03
US10347597B2 (en) 2019-07-09
EP3175477B1 (en) 2021-02-24
KR20170038819A (en) 2017-04-07
SG10201900450PA (en) 2019-02-27
JP2017532758A (en) 2017-11-02
CN106575637A (en) 2017-04-19

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