SG11201704516QA - Structure for radiofrequency applications - Google Patents

Structure for radiofrequency applications

Info

Publication number
SG11201704516QA
SG11201704516QA SG11201704516QA SG11201704516QA SG11201704516QA SG 11201704516Q A SG11201704516Q A SG 11201704516QA SG 11201704516Q A SG11201704516Q A SG 11201704516QA SG 11201704516Q A SG11201704516Q A SG 11201704516QA SG 11201704516Q A SG11201704516Q A SG 11201704516QA
Authority
SG
Singapore
Prior art keywords
radiofrequency applications
radiofrequency
applications
Prior art date
Application number
SG11201704516QA
Inventor
Oleg Kononchuk
Didier Landru
Christophe Figuet
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201704516QA publication Critical patent/SG11201704516QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/03—Constructional details, e.g. casings, housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/64—Carriers or collectors
    • H01M4/66—Selection of materials
    • H01M4/663—Selection of materials containing carbon or carbonaceous materials as conductive part, e.g. graphite, carbon fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Micromachines (AREA)
SG11201704516QA 2014-12-04 2015-09-17 Structure for radiofrequency applications SG11201704516QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1402801A FR3029682B1 (en) 2014-12-04 2014-12-04 HIGH RESISTIVITY SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
PCT/FR2015/052494 WO2016087728A1 (en) 2014-12-04 2015-09-17 Structure for radiofrequency applications

Publications (1)

Publication Number Publication Date
SG11201704516QA true SG11201704516QA (en) 2017-07-28

Family

ID=53039463

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201704516QA SG11201704516QA (en) 2014-12-04 2015-09-17 Structure for radiofrequency applications

Country Status (8)

Country Link
US (1) US10250282B2 (en)
EP (2) EP3227905B1 (en)
JP (1) JP6612872B2 (en)
KR (1) KR102395398B1 (en)
CN (1) CN107004572B (en)
FR (1) FR3029682B1 (en)
SG (1) SG11201704516QA (en)
WO (1) WO2016087728A1 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3037438B1 (en) 2015-06-09 2017-06-16 Soitec Silicon On Insulator METHOD OF MANUFACTURING A SEMICONDUCTOR ELEMENT COMPRISING A LOAD TRAPPING LAYER
US10530327B2 (en) * 2015-08-25 2020-01-07 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator
US10523178B2 (en) 2015-08-25 2019-12-31 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator
US10541667B2 (en) * 2015-08-25 2020-01-21 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator having trap-rich region
US10181428B2 (en) * 2015-08-28 2019-01-15 Skyworks Solutions, Inc. Silicon on porous silicon
EP3144958B1 (en) 2015-09-17 2021-03-17 Soitec Structure for radiofrequency applications and process for manufacturing such a structure
KR20180116261A (en) * 2016-02-25 2018-10-24 니폰 제온 가부시키가이샤 HEAT CONDUCTIVE SHEET, METHOD FOR MANUFACTURING THE SAME,
FR3053532B1 (en) 2016-06-30 2018-11-16 Soitec HYBRID STRUCTURE FOR ACOUSTIC SURFACE WAVE DEVICE
FR3058561B1 (en) * 2016-11-04 2018-11-02 Soitec PROCESS FOR PRODUCING A SEMICONDUCTOR ELEMENT COMPRISING A HIGHLY RESISTIVE SUBSTRATE
FR3062238A1 (en) * 2017-01-26 2018-07-27 Soitec SUPPORT FOR A SEMICONDUCTOR STRUCTURE
FR3062517B1 (en) 2017-02-02 2019-03-15 Soitec STRUCTURE FOR RADIO FREQUENCY APPLICATION
US10784348B2 (en) 2017-03-23 2020-09-22 Qualcomm Incorporated Porous semiconductor handle substrate
US11063117B2 (en) * 2017-04-20 2021-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having carrier-trapping layers with different grain sizes
FR3067517B1 (en) 2017-06-13 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives SUBSTRATE SOI COMPATIBLE WITH RFSOI AND FDSOI TECHNOLOGIES
FR3079662B1 (en) * 2018-03-30 2020-02-28 Soitec SUBSTRATE FOR RADIO FREQUENCY APPLICATIONS AND MANUFACTURING METHOD THEREOF
US20210183691A1 (en) * 2018-07-05 2021-06-17 Soitec Substrate for an integrated radiofrequency device, and process for manufacturing same
FR3098642B1 (en) * 2019-07-12 2021-06-11 Soitec Silicon On Insulator method of manufacturing a structure comprising a thin layer transferred to a support provided with a charge trapping layer
CN113629182A (en) * 2020-05-08 2021-11-09 济南晶正电子科技有限公司 TC-SAW composite substrate and preparation method thereof
CN111884616B (en) * 2020-07-23 2021-04-13 中国科学院上海微系统与信息技术研究所 Substrate/piezoelectric material thin film structure and preparation method and application thereof
US20220116014A1 (en) * 2020-10-13 2022-04-14 RF360 Europe GmbH Surface acoustic wave (saw) device with high permittivity dielectric for intermodulation distortion improvement
CN112260660B (en) * 2020-10-21 2023-03-03 济南晶正电子科技有限公司 Composite substrate, composite film and preparation method thereof
FR3117668B1 (en) 2020-12-16 2022-12-23 Commissariat Energie Atomique IMPROVED RF SUBSTRATE STRUCTURE AND METHOD OF MAKING
CN112750686B (en) * 2020-12-30 2021-12-07 济南晶正电子科技有限公司 Multilayer substrate, electronic component and preparation method of multilayer substrate
FR3136325A1 (en) * 2022-06-02 2023-12-08 Soitec ELASTIC SURFACE WAVE DEVICE
WO2023232562A1 (en) * 2022-06-02 2023-12-07 Soitec Method for manufacturing an elastic surface wave device

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US5637883A (en) * 1995-02-27 1997-06-10 The United States Of America As Represented By The Secretary Of The Navy Optically addressed spatial light modulator using an intrinsic semiconductor active material and high resistivity cladding layers
US20070032040A1 (en) * 2003-09-26 2007-02-08 Dimitri Lederer Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses
JP4983010B2 (en) * 2005-11-30 2012-07-25 富士通株式会社 Piezoelectric element and manufacturing method thereof
JP2009231376A (en) * 2008-03-19 2009-10-08 Shin Etsu Handotai Co Ltd Soi wafer and semiconductor device, and method of manufacturing the soi wafer
US8536021B2 (en) * 2010-12-24 2013-09-17 Io Semiconductor, Inc. Trap rich layer formation techniques for semiconductor devices
EP2656388B1 (en) * 2010-12-24 2020-04-15 QUALCOMM Incorporated Trap rich layer for semiconductor devices
FR2973158B1 (en) * 2011-03-22 2014-02-28 Soitec Silicon On Insulator METHOD FOR MANUFACTURING SEMICONDUCTOR-TYPE SUBSTRATE ON INSULATION FOR RADIO FREQUENCY APPLICATIONS
KR101876579B1 (en) * 2012-09-13 2018-07-10 매그나칩 반도체 유한회사 Power Semiconductor and Fabricating Method Thereof

Also Published As

Publication number Publication date
FR3029682B1 (en) 2017-12-29
EP3872839A1 (en) 2021-09-01
CN107004572B (en) 2020-05-22
CN107004572A (en) 2017-08-01
US20170331501A1 (en) 2017-11-16
EP3227905A1 (en) 2017-10-11
US10250282B2 (en) 2019-04-02
JP2018501651A (en) 2018-01-18
WO2016087728A1 (en) 2016-06-09
JP6612872B2 (en) 2019-11-27
EP3227905B1 (en) 2021-08-18
FR3029682A1 (en) 2016-06-10
KR102395398B1 (en) 2022-05-10
KR20170091627A (en) 2017-08-09

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