SG10201913097SA - Structure for radiofrequency applications - Google Patents

Structure for radiofrequency applications

Info

Publication number
SG10201913097SA
SG10201913097SA SG10201913097SA SG10201913097SA SG10201913097SA SG 10201913097S A SG10201913097S A SG 10201913097SA SG 10201913097S A SG10201913097S A SG 10201913097SA SG 10201913097S A SG10201913097S A SG 10201913097SA SG 10201913097S A SG10201913097S A SG 10201913097SA
Authority
SG
Singapore
Prior art keywords
radiofrequency applications
radiofrequency
applications
Prior art date
Application number
SG10201913097SA
Inventor
Eric Desbonnets
Ionut Radu
Oleg Kononchuk
Jean-Pierre Raskin
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG10201913097SA publication Critical patent/SG10201913097SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Micromachines (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Element Separation (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
SG10201913097SA 2016-06-08 2017-06-06 Structure for radiofrequency applications SG10201913097SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1655266A FR3052592B1 (en) 2016-06-08 2016-06-08 STRUCTURE FOR RADIO FREQUENCY APPLICATIONS

Publications (1)

Publication Number Publication Date
SG10201913097SA true SG10201913097SA (en) 2020-02-27

Family

ID=56511794

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201913097SA SG10201913097SA (en) 2016-06-08 2017-06-06 Structure for radiofrequency applications
SG11201810415PA SG11201810415PA (en) 2016-06-08 2017-06-06 Structure for radiofrequency applications

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201810415PA SG11201810415PA (en) 2016-06-08 2017-06-06 Structure for radiofrequency applications

Country Status (8)

Country Link
US (3) US10943815B2 (en)
EP (1) EP3469627B1 (en)
JP (1) JP7053502B2 (en)
KR (1) KR102369549B1 (en)
FR (1) FR3052592B1 (en)
SG (2) SG10201913097SA (en)
TW (1) TWI733831B (en)
WO (1) WO2017212160A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3052592B1 (en) * 2016-06-08 2018-05-18 Soitec STRUCTURE FOR RADIO FREQUENCY APPLICATIONS
FR3062517B1 (en) * 2017-02-02 2019-03-15 Soitec STRUCTURE FOR RADIO FREQUENCY APPLICATION
CN110828962B (en) 2018-08-09 2021-08-03 财团法人工业技术研究院 Antenna array module and manufacturing method thereof
US10658474B2 (en) * 2018-08-14 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming thin semiconductor-on-insulator (SOI) substrates
FR3086096B1 (en) * 2018-09-14 2021-08-27 Soitec Silicon On Insulator PROCESS FOR MAKING AN ADVANCED SUBSTRATE FOR A HYBRID INTEGRATION
US11661337B2 (en) * 2020-10-19 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Comb electrode release process for MEMS structure
US11658206B2 (en) * 2020-11-13 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench structure for a capacitive device
US20220406649A1 (en) * 2021-06-22 2022-12-22 Texas Instruments Incorporated Passive component q factor enhancement with elevated resistance region of substrate
FR3126541A1 (en) 2021-09-02 2023-03-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR MANUFACTURING A MULTILAYER STRUCTURE
FR3134478A1 (en) * 2022-04-06 2023-10-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Substrate comprising vias and associated manufacturing processes
FR3142289A1 (en) * 2022-11-23 2024-05-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for manufacturing a stack comprising an insulating layer

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JP3582890B2 (en) * 1995-05-23 2004-10-27 株式会社日立製作所 Semiconductor device
US6312568B2 (en) * 1999-12-07 2001-11-06 Applied Materials, Inc. Two-step AIN-PVD for improved film properties
KR100388011B1 (en) * 2000-01-17 2003-06-18 삼성전기주식회사 SAW Filter by GaN single crystal thin film and A Method for Manufacturing It
US6391792B1 (en) * 2000-05-18 2002-05-21 Taiwan Semiconductor Manufacturing Co., Ltd Multi-step chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layer
US20090179027A1 (en) * 2007-12-29 2009-07-16 Saint-Gobain Ceramics & Plastics, Inc. Coaxial ceramic igniter and methods of fabrication
US8232920B2 (en) * 2008-08-07 2012-07-31 International Business Machines Corporation Integrated millimeter wave antenna and transceiver on a substrate
US8492868B2 (en) * 2010-08-02 2013-07-23 International Business Machines Corporation Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer
CN102169552A (en) 2011-01-28 2011-08-31 上海集成电路研发中心有限公司 Radio frequency identification tag and manufacturing method thereof
US9070585B2 (en) * 2012-02-24 2015-06-30 Semiconductor Components Industries, Llc Electronic device including a trench and a conductive structure therein and a process of forming the same
CN103022054B (en) * 2012-12-21 2016-12-28 上海华虹宏力半导体制造有限公司 Silicon radio frequency device on insulator and silicon-on-insulator substrate
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FR3052592B1 (en) * 2016-06-08 2018-05-18 Soitec STRUCTURE FOR RADIO FREQUENCY APPLICATIONS

Also Published As

Publication number Publication date
KR20190017762A (en) 2019-02-20
US20190157137A1 (en) 2019-05-23
EP3469627B1 (en) 2020-07-29
TWI733831B (en) 2021-07-21
JP2019527925A (en) 2019-10-03
EP3469627A1 (en) 2019-04-17
FR3052592B1 (en) 2018-05-18
US20220277988A1 (en) 2022-09-01
WO2017212160A1 (en) 2017-12-14
TW201806175A (en) 2018-02-16
US11923239B2 (en) 2024-03-05
JP7053502B2 (en) 2022-04-12
US11367650B2 (en) 2022-06-21
US10943815B2 (en) 2021-03-09
US20210143053A1 (en) 2021-05-13
FR3052592A1 (en) 2017-12-15
SG11201810415PA (en) 2018-12-28
KR102369549B1 (en) 2022-03-04

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