CN1115723C - Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method using the same - Google Patents
Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method using the same Download PDFInfo
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- CN1115723C CN1115723C CN 96114485 CN96114485A CN1115723C CN 1115723 C CN1115723 C CN 1115723C CN 96114485 CN96114485 CN 96114485 CN 96114485 A CN96114485 A CN 96114485A CN 1115723 C CN1115723 C CN 1115723C
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Abstract
The present invention provides a novel method for making selective tungsten nitride layers and a method for making metal connecting wires by using the same method. In the methods, the flow ratio of a nitrous gas to a tungsten source gas which are injected is adjusted, so that a tungsten nitride layer is selectively deposited only in one contact hole; therefore, the present invention prevents the erosion on the silicon substrate and makes the tungsten nitride layer which is stable at a high temperature; in addition, the contact resistance of the metal connecting wire can be reduced.
Description
The present invention relates to a kind of method of producing semiconductor device, especially, relate to a kind of production tungsten nitride (WN
x) method of layer, this coating can form in a contact hole selectively, perhaps forms not invading on the underlying metal connecting line layer of substrate, or forms on the bottom connecting line layer, and at high temperature be stable.The invention still further relates to and utilize the same manner to produce the method for metal connecting line.
Along with the raising of semiconductor integrated circuit (ICs) integrated level, the width of metal interconnected circuit reduces, and the ratio of width to height of contact hole (aspect ratio) continues to rise.Yet aluminium (Al) alloy firm as the metal connecting line material demonstrates bad phase step type cover layer in contact hole now, or owing to spraying plating produces blank spot.The result is, is short-circuited between the interconnection line, reduced the reliability of integrated circuit.Therefore, selective chemical vapor deposition-tungsten (SCVD-W) is attracting people to make great efforts to attempt doing with tungsten (W) by chemical vapor deposition (CVD) material of metal connecting line always.
Figure 1A shows a kind of method of making tungsten layer by chemical vapor deposition to 1E.
In Figure 1A, be used for the impurity range 12 in definition source/drain region to make by ion is injected a silicon substrate 10.Then, be made as a silicon oxide layer of insulating barrier 13 on the whole surface of the substrate 10 that comprises impurity range 12, its thickness reaches the 500-2000 dust.Shown in Figure 1B, the groove 19 that wherein is used to make metal connecting line is by an insulating barrier 13 and silicon substrate 10 etching and processing to a predetermined degree of depth are made.
Subsequently, a titanium (Ti) layer is deposited to thickness on insulating barrier 13 and in the groove 19 be the 200-1500 dust, and heat-treat.Heat treated result is, silicon substrate 10 reacts with the Ti layer, forms a titanium silicide (TiSix) layer 14 like this, as to only resistive layer on the substrate contact surface.Then, the remaining titanium that does not react with substrate is removed by wet corrosion, has obtained the result shown in Fig. 1 C.
After this, shown in Fig. 1 D, it is the 150-900 dust that a titanium nitride (TiN) layer is deposited to thickness as diffusion impervious layer 15, and also having a tungsten layer 16 is 1000 dusts or more than 1000 dusts being deposited to thickness on the diffusion impervious layer 15.
Then, the gained product is by the etched reduction of chemico-mechanical polishing (CMP), and shown in Fig. 1 E, 16 of tungsten layers are retained in the groove 19, and this has just made metal connecting line.
Yet, as described above, when metal connecting line by selective chemical vapor deposition-tungsten (SCVD-W) when making, the TiN layer is as some physical characteristic of diffusion impervious layer, such as tension force, be different from those W layers, and the contact-making surface between two-layer is stressed very strong as the metal connecting line layer.Therefore, the W layer can be raised, and particularly TiN layer/W layer may be raised from insulating barrier when CMP (Chemical Mechanical Polishing) process need add mechanical force.
On the other hand, when by P
+Boron impurities (B) is when making impurity range, and impurity reacts with Ti in heating process thereafter and generates TiB
2The result is that the resistance contact performance reduces, contact resistance increase simultaneously.
In order to overcome the problems referred to above, a method shown in Fig. 2 A has been proposed, wherein tungsten layer 24 is made into a resistive layer, and tungsten nitride layer 25 is produced on the silicon substrate 20 as the diffusion impervious layer on the impurity territory 22, and a tungsten layer 26 is made into a metal connecting line layer then.
In said method, tungsten layer 24 passes through to flow into tungsten fluoride (WF with 6sccm respectively as resistive layer
6) and with 200sccm inflow hydrogen (H
2), be 600 ℃ at deposition temperature, be fabricated to thickness under the 0.1Torr atmospheric pressure and reach the 200-1500 dust.Then, it is the 150-900 dust that tungsten nitride layer 25 is deposited to thickness as diffusion impervious layer, tungsten layer 26 be deposited on the tungsten nitride layer 25 thickness be 1000 dusts or more than.The etched reduction of gained product, this has just made a metal connecting line.A cross section of metal connecting line shows in scanning electron microscopy (SEM) photo of Fig. 2 B.
The tungsten layer that is made into resistive layer demonstrates the adhesiveness fabulous with silicon, yet tungsten and silicon reduction reaction when forming tungsten silicide causes the erosion of silicon substrate on the other hand, and this has just damaged electrical characteristics, shown in Fig. 2 B.Reduce to 0.1um or following very lagre scale integrated circuit (VLSIC) epoch in the node degree of depth, erosion has become more serious problem.Further, because tungsten and silicon react 550 ℃ or above temperature, processing subsequently must be difficult to above-mentioned metal connecting line manufacture method is applied to the manufacture process of semiconductor device when the temperature that is higher than 550 ℃ is finished.
For overcoming the problems referred to above, the purpose of this invention is to provide a method of making semiconductor device.
For achieving the above object, a kind of method of making the semiconductor device tungsten nitride layer is provided, may further comprise the steps:＜a make in the above on the Semiconductor substrate of conductive layer and make insulating barrier;＜b〉thus make contact hole by the described insulating barrier of etching and expose described conductive layer; And＜c〉making titanium silicide resistive layer in contact hole; And＜d〉selective reaction by nitrogenous gas, tungsten source gas and reducing agent gas, the flow velocity of control nitrogenous gas and tungsten source gas makes that the flow velocity of nitrogenous gas is 2 to 7 times of tungsten source gas flow rate, deposit tungsten nitride layer optionally on the resistive layer in contact hole and the sidewall of contact hole, thereby the formation position of control tungsten nitride layer and prevent from the insulating barrier outside the contact hole, to form tungsten nitride layer.
For achieving the above object, a kind of method of making the semiconductor device metal line also is provided, may further comprise the steps:＜a make in the above on the Semiconductor substrate of conductive layer and make insulating barrier;＜b〉thus make contact hole by the described insulating barrier of etching and expose described conductive layer; And＜c〉making tungsten silicide resistive layer on the described conductive layer that exposes by contact hole;＜d〉selective reaction by nitrogenous gas, tungsten source gas and reducing agent gas, the flow velocity of control nitrogenous gas and tungsten source gas makes that the flow velocity of nitrogenous gas is 2 to 7 times of tungsten source gas flow rate, deposit tungsten nitride layer optionally on the resistive layer in contact hole and the sidewall of contact hole, thereby the formation position of control tungsten nitride layer and prevent from the insulating barrier outside the contact hole, to form tungsten nitride layer; And＜e〉on tungsten nitride layer, make metal level.
In the present invention, preferably use WF
6And WCl
6One of them is as tungsten source gas; N
2, NH
3And monomethylhydrazine (methyl hydrazine) one of them is as nitrogenous gas; Also has H
2, SiH
4, SiH
1Cl
3And PH
3One of them is as reducing agent gas.
The flow-rate ratio of nitrogenous gas and tungsten source gas can be 0.5-100, preferably 2-7.The flow-rate ratio of reducing agent gas and tungsten source gas can be 0-500, preferably 20-50.
Be preferably in and comprise several steps in the step of making resistive layer: tungsten nitride layer of deposit on the conductive layer that comes out by contact holes exposing; Heat-treat by the product that has tungsten nitride layer, make the resistive layer of a thin tungsten silicide layer, make that tungsten and the silicon substrate above the tungsten nitride layer reacts gained.
According to the present invention, tungsten nitride layer is formed in the contact hole that exposes silicon substrate or underlying metal connecting line layer selectively, has made highly reliable metal connecting line like this.
Above-mentioned purpose of the present invention and advantage are by becoming clearer and more definite to the detailed description of most preferred embodiment and with reference to attached chart:
Figure 1A is a sectional view to 1E, has explained a kind of method of metal connecting line of traditional manufacturing Ti/TiN/W structure;
Fig. 2 A is a sectional view, has explained a kind of traditional manufacturing W/WN
xThe method of the metal connecting line of/W structure;
Fig. 2 B is a scanning electron microscopy (SEM) photo in metal connecting line cross section shown in Fig. 2 A;
Fig. 3 is according to WN of deposit of the present invention
xThe sectional view of the process chamber of layer;
Fig. 4 A is a scanning electron micrograph to 4D, has shown according to NH
3Gas flow and the cross section of TiN layer of growth selectively;
Fig. 5 is a figure, has shown the X-ray diffraction result of the WN layer of making according to the present invention;
Fig. 6 A is a sectional view to 6D, has explained the method according to the metal connecting line that is used for producing the semiconductor devices of first embodiment of the invention;
Fig. 7 A and 7B are sectional views, have explained the method according to the metal connecting line that is used for producing the semiconductor devices of second embodiment of the invention;
Fig. 8 A to Fig. 8 E is according to third embodiment of the invention, the sectional view of the method for the metal connecting line that is used for producing the semiconductor devices.
WN
xLayer growth equipment
Fig. 3 is according to of the present invention, is used for WN of deposit
xThe sectional view of the chemical vapor deposition process chamber of layer.
Be used for the bottom that the pedestal 30 of loaded with wafers thereon is installed in process chamber 40 with reference to 3, one in figure, infrared (IR) lamp 39 is installed in top and is used for the temperature of wafer 32 is heated to a temperature that is fit to react.Tungsten source gas and nitrogenous gas are injected into from first gas access 34, and level flows on the wafer 32 that is loaded on the pedestal 30.Reducing agent gas is injected into from second gas access 36, vertically flows on the wafer 32 by a netted nozzle 38, and reacts with the gas that is imported by first gas access 34, has generated WN like this on wafer 32
xLayer.After the reaction, gas is by outlet 42 emptyings relative with first and second gas accesses 34 and 36.
The manufacturing of WN layer
Issuable pollutant sources are by being changed to 10 to process chamber in process chamber 40
-6Torr or following near vacuum and reduce to minimum.Then, pedestal 30 is loaded the silicon substrate that is shaped on impurity range above; Or loading a silicon substrate, this silicon substrate comprises one by for example aluminium (Al), tungsten (W), molybdenum (Mo), cobalt (Co), titanium (Ti), one of them simple metal of copper (Cu) and platinum (Pt), or by their one of silicon compound, or the underlying metal connecting line layer made of one of their alloy.Process chamber 40 is heated to 200-700 ℃ by IR lamp 39, and reacting gas is imported by first and second gas accesses 34 and 36 then, is preferably under the 0.01-1Torr air pressure.Here, the most handy WF
6Or WCl
6As tungsten source gas, use monomethylhydrazine, N
2Or NH
3As nitrogenous gas, they are injected into from first gas access 34.The most handy H
2, SiH
4, SiH
1Cl
3, SiH
2Cl
2And PH
3In a kind of as reducing agent gas, it is injected into from second gas access 36.The flow-rate ratio of nitrogenous gas and tungsten source gas is better at 0.5-100, preferably 2-7.The flow-rate ratio of reducing agent gas and tungsten source gas is better at 0-500, preferably 20-50.
Fig. 4 A is a scanning electron micrograph to 4D, has shown according to NH
3The WN of gas and tungsten source gas flow ratio
xThe growth of layer.
The silicon substrate that the inside has a contact hole is loaded into after the chemical vapor deposition process chamber 40 of Fig. 3 WN
xLayer is by NH
3The flow of gas changes to 0,10, and 20 and 40sccm, 600 ℃ of fixing deposition temperatures, under the 0.1Torr air pressure, WF
6Flow is 6sccm, H
2Flow is that 200sccm makes.The gained result shows in the scanning electron micrograph of 4D at Fig. 4 A.
Demonstrate from Fig. 4 A, have only pure tungsten layer just to form in contact hole, show that tungsten layer seriously corrodes substrate, this is a technologic problem in the past.On the other hand, along with NH
3Flow be 10sccm, shown in Fig. 4 B, corrodes and be suppressed, and film is grown hardly and a centronucleus only generates in the contact hole lower surface.Along with NH
3Flow be 20sccm, shown in Fig. 4 C, a WN
xLayer only generates on substrate part and contact hole sidewall selectively, does not generate on silicon oxide layer.Yet, shown in Fig. 4 D, along with NH
3Flow be 40sccm, WN
xThe selection deposition characteristics of layer disappears, and it generates on the entire substrate surface.
Therefore, conclusion is, by adjusting the flow-rate ratio of nitrogenous gas and tungsten source gas, WN
xLayer can only be grown in contact hole selectively.This is at the WN of Fig. 4 C of Fig. 5 demonstration
xThe X-ray diffraction result in more obvious.Among Fig. 5, shown β-W
2Three peaks of N phase place and different crystal orientations, this shows WN
xLayer generates on silicon substrate selectively.
Make the method for metal connecting line
With reference to figure 6A to 8E, will describe one and utilize above-mentioned WN
xLayer manufacturing method is made the method for the metal connecting line of semiconductor device.
First embodiment
With reference to figure 6A, an insulating barrier 103, silicon oxide layer for example, on a silicon substrate 100 that wherein has an impurity range 102, be made into to thickness be the 500-2000 dust.Here, can be replaced by silicon nitride layer, or be replaced by will impurity injecting the coating that obtains behind a silicon oxide layer or the silicon nitride layer as the silicon oxide layer of insulating barrier 103.Then, by photoetching process dry corrosion insulating barrier 103, make a contact hole 110, it is used for exposing impurity range 102.
With reference to figure 6B, Ti layer of deposit to thickness is the 200-1500 dust on insulating barrier 103 and in the contact hole 110.The gained product is by heat treatment then, and the Ti layer reacts with the silicon substrate 100 that is exposed by contact hole 110 like this, so only forms a TiSix layer 104 on the contact surface of contact hole 110 and silicon substrate 100.The remaining Ti that does not react with substrate is removed by wet corrosion.TiSix layer 104 is as resistive layer.
With reference to figure 6C, silicon substrate 100 is heated to 200-700 ℃, by flowing into nitrogenous gas, tungsten source gas and reducing agent gas to silicon substrate 100, at deposit WN selectively on the substrate 100 that is exposed by contact hole 110 and on the sidewall of insulating barrier 103
xLayer.Here, the flow-rate ratio of nitrogen family gas and tungsten source gas is 0.5-100, and the flow-rate ratio of reducing agent gas and tungsten source gas is 0-500.
With reference to figure 6D, after WN layer 105 is made into, only in contact hole 100, pass through thin metal layer 108 of original position mode deposit, just made a metal connecting line.Here, metal level is preferably by for example Al, W, and Mo, Co, Ti, one of them simple metal of Cu and Pt, or by their one of silicon compound, or one of their alloy is made.
Second embodiment
The difference of second embodiment and first embodiment is, make a groove 109 by etching isolation layer 103 and substrate 100, shown in Fig. 7 A, make a metal connecting line layer then, rather than generated a metal connecting line in the contact hole of only making by insulating barrier of etching 110 of Fig. 6 A.Among Fig. 7 B, after groove 109 forms, as the TiSix layer 104 of resistive layer, as the WN of diffusion impervious layer
xLayer 105 and be made in succession as the tungsten layer 108 of metal level, this has just finished a metal connecting line as the mode of first embodiment.The reason of making groove 109 is the problem that increases for the ratio of width to height that overcomes contact hole.
The 3rd embodiment
The 3rd embodiment and first and second embodiment have a great difference, difference is not to be by the TiSix layer as resistive layer, but pass through chemical vapor deposition, deposition tungsten or tungsten compound for example tungsten silicide reduce contact resistance, and by chemical vapor deposition, the WN layer as diffusion impervious layer is deposited in situ.
With reference to figure 8A, on silicon substrate 100, make one according to the commonplace components partition method, be used for device isolation region 101 that the behaviour area is separated separately, an impurity range, for example a N after this
+Or P
+Knot 102 injects by ion in a behaviour area to be made.Followed by, insulating barrier 103, for example BPSG is plated on the gained product, has made the execution in step complanation.
With reference to figure 8B, insulating barrier 103 is etched by photoetching process, and contact hole 110 is made into to be used for exposing the impurity range 102 of silicon substrate 100.
With reference to figure 8C, make a tungstenic resistive layer 124 by chemical vapor deposition on the gained product of contact hole 110 comprising.Here, resistive layer 124 can be made with following 4 kinds of modes:
＜1〉flows into tungsten source gas and be unlikely and on silicon, cause erosion in enough short time, come deposition tungsten resistive layer 124 like this;
＜2〉in the initialization deposit, tungsten nitride resistive layer 124 is made into very thin, by the flow-rate ratio of nitrogenous gas and tungsten source gas is set to 2 or below, only in the contact hole bottom, this has just prevented the erosion on the silicon to a large amount of tungsten.Then,, make the flow-rate ratio of nitrogen family gas and tungsten source gas reach 2-100,2-7 preferably, WN by increasing the flow of nitrogenous gas
xLayer 125 is made in contact hole.Like this, can prevent that erosion and WN layer on the silicon from can only generate selectively in contact hole;
＜3〉SiH
4Or SiH
2Cl
2Mix with tungsten source gas and to make resistive layer 124,500 ℃ or above deposit, this has just made tungsten silicide mist; Perhaps
＜4〉WN
xThe barrier metal of layer directly is deposited on the silicon substrate and through calcining, tungsten on the WN layer and bottom silicon react like this, have just made the tungsten silicide as resistive layer 124.
With reference to figure 8D, a diffusion impervious layer 125, WN layer just, with first embodiment in identical mode deposit in the same chamber of resistive layer 124, the WN layer be deposited to thickness be 500 dusts or more than.
With reference to figure 8E, make metal connecting line layer 128 of deposit on the gained product of diffusion impervious layer 125 in the above.Metal level 128 is preferably made by deposit line metal such as Al or Cu.
Therefore, as mentioned above, according to the present invention, a WN
xLayer can only be created on selectively on the sidewall of contact hole and the silicon substrate or underlying metal connecting line layer that go out by contact holes exposing on, and not on insulating barrier.Like this, because at WN as diffusion impervious layer
xAfter layer is made, made the W layer as the metal connecting line layer, tungsten nitride has similar physical characteristic with tungsten layer, and the lifting that the conventional metals connecting line layer produces can be prevented from.When making resistive layer, overcome the erosion of substrate and follow-up high-temperature process and can make stable semiconductor device according to third embodiment of the invention.In addition, can prevent to strengthen contact resistance owing to using the Ti layer to make resistive layer.
The present invention is not limited to the foregoing description, is readily understood that, any one expert of the art can obtain multiple changing form within the spirit and scope of the present invention.
Claims (19)
1. method of making the semiconductor device tungsten nitride layer may further comprise the steps:
＜a〉make in the above on the Semiconductor substrate of conductive layer and make insulating barrier;
＜b〉thus make contact hole by the described insulating barrier of etching and expose described conductive layer; And
＜c〉making titanium silicide resistive layer in contact hole; And
＜d〉selective reaction by nitrogenous gas, tungsten source gas and reducing agent gas, the flow velocity of control nitrogenous gas and tungsten source gas makes that the flow velocity of nitrogenous gas is 2 to 7 times of tungsten source gas flow rate, deposit tungsten nitride layer optionally on the resistive layer in contact hole and the sidewall of contact hole, thereby the formation position of control tungsten nitride layer and prevent from the insulating barrier outside the contact hole, to form tungsten nitride layer.
2. according to the method for the manufacturing semiconductor device tungsten nitride layer of claim 1, wherein said conductive layer is to mix P
+One of the silicon substrate of impurity and metal connecting line layer, described metal connecting line layer is formed by one of aluminium (Al), tungsten (W), molybdenum (Mo), cobalt (Co), titanium (Ti), copper (Cu), platinum (Pt), the silicide of described metal and alloy of described metal.
3. according to the method for the manufacturing semiconductor device tungsten nitride layer of claim 1, it is characterized in that: one of them makes described insulating barrier by silicon oxide layer, silicon nitride layer with by impurity being injected this three of the resulting coating of one of described silicon oxide layer and described silicon nitride layer.
4. according to the method for the manufacturing semiconductor device tungsten nitride layer of claim 1, it is characterized in that: described tungsten source gas is WF
6And WCl
6One of.
5. according to the method for the manufacturing semiconductor device tungsten nitride layer of claim 1, it is characterized in that: described nitrogenous gas is N
2, NH
3With one of monomethylhydrazine.
6. according to the method for the manufacturing semiconductor device tungsten nitride layer of claim 1, it is characterized in that: described reducing agent gas is H
2, SiH
4, SiH
1Cl
3, SiH
2Cl
2And PH
3One of.
7. according to the method for the manufacturing semiconductor device tungsten nitride layer of claim 1, it is characterized in that: the flow-rate ratio of described reducing agent gas and described tungsten source gas is 0-500.
8. according to the method for the manufacturing semiconductor device tungsten nitride layer of claim 7, it is characterized in that: the flow-rate ratio of described reducing agent gas and described tungsten source gas is 20-50.
9. according to the method for the manufacturing semiconductor device tungsten nitride layer of claim 1, at described step＜b〉further comprising the steps of afterwards: make groove by the described conductive layer that exposes of etching, reach certain depth.
10. method of making the semiconductor device metal line may further comprise the steps:
＜a〉make in the above on the Semiconductor substrate of conductive layer and make insulating barrier;
＜b〉thus make contact hole by the described insulating barrier of etching and expose described conductive layer; And
＜c〉making tungsten silicide resistive layer on the described conductive layer that exposes by contact hole;
＜d〉selective reaction by nitrogenous gas, tungsten source gas and reducing agent gas, the flow velocity of control nitrogenous gas and tungsten source gas makes that the flow velocity of nitrogenous gas is 2 to 7 times of tungsten source gas flow rate, deposit tungsten nitride layer optionally on the resistive layer in contact hole and the sidewall of contact hole, thereby the formation position of control tungsten nitride layer and prevent from the insulating barrier outside the contact hole, to form tungsten nitride layer; And
＜e〉on tungsten nitride layer, make metal level.
11. the method according to the manufacturing semiconductor device metal line of claim 10 is characterized in that: the described step＜c that makes described resistive layer〉may further comprise the steps:
Deposit tungsten nitride layer on the described conductive layer that exposes by described contact hole; And
The top gained product that is manufactured with described tungsten nitride layer is heat-treated, make that tungsten and the silicon substrate in the described tungsten nitride layer reacts, make the resistive layer of tungsten silicide thin layer.
12. according to the method for the manufacturing semiconductor device metal line of claim 10, it is characterized in that: described conductive layer is to mix P
+One of the silicon substrate of impurity and metal connecting line layer, described metal connecting line layer is formed by one of aluminium (Al), tungsten (W), molybdenum (Mo), cobalt (Co), titanium (Ti), copper (Cu), platinum (Pt), the silicide of described metal and alloy of described metal.
13. the method according to the manufacturing semiconductor device metal line of claim 10 is characterized in that: one of them makes described insulating barrier by silicon oxide layer, silicon nitride layer with by impurity being injected this three of the resulting coating of one of described silicon oxide layer and described silicon nitride layer.
14. the method according to the manufacturing semiconductor device metal line of claim 10 is characterized in that: described step＜d〉and＜c〉original position is carried out in same chamber.
15. according to the method for the manufacturing semiconductor device metal line of claim 10, it is characterized in that: described tungsten source gas is WF
6And WCl
6One of.
16. according to the method for the manufacturing semiconductor device metal line of claim 10, it is characterized in that: described nitrogenous gas is N
2, NH
3With one of monomethylhydrazine.
17. according to the method for the manufacturing semiconductor device metal line of claim 10, it is characterized in that: described reducing agent gas is H
2, SiH
4, SiH
1Cl
3, SiH
2Cl
2And PH
3One of.
18. according to the method for the manufacturing semiconductor device metal line of claim 10, it is characterized in that: the flow-rate ratio of described reducing agent gas and described tungsten source gas is 0-500.
19. according to the method for the manufacturing semiconductor device metal line of claim 10, it is characterized in that: described metal level is formed by one of aluminium (Al), tungsten (W), molybdenum (Mo), cobalt (Co), titanium (Ti), copper (Cu), platinum (Pt), the silicide of described metal and alloy of described metal.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96114485 CN1115723C (en) | 1996-11-15 | 1996-11-15 | Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96114485 CN1115723C (en) | 1996-11-15 | 1996-11-15 | Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method using the same |
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|---|---|
| CN1182958A CN1182958A (en) | 1998-05-27 |
| CN1115723C true CN1115723C (en) | 2003-07-23 |
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ID=5122144
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|---|---|---|---|
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Cited By (5)
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|---|---|---|---|---|
| CN105097446A (en) * | 2014-05-09 | 2015-11-25 | 朗姆研究公司 | Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor |
| US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
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| US6815248B2 (en) * | 2002-04-18 | 2004-11-09 | Infineon Technologies Ag | Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing |
| CN100342526C (en) * | 2003-08-22 | 2007-10-10 | 全懋精密科技股份有限公司 | Semiconductor sealing baseplate structure of electric padding metal protective layer and producing method thereof |
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| JP6437324B2 (en) * | 2014-03-25 | 2018-12-12 | 東京エレクトロン株式会社 | Method for forming tungsten film and method for manufacturing semiconductor device |
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- 1996-11-15 CN CN 96114485 patent/CN1115723C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097446A (en) * | 2014-05-09 | 2015-11-25 | 朗姆研究公司 | Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor |
| US10529722B2 (en) | 2015-02-11 | 2020-01-07 | Lam Research Corporation | Tungsten for wordline applications |
| US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
| US10546751B2 (en) | 2015-05-27 | 2020-01-28 | Lam Research Corporation | Forming low resistivity fluorine free tungsten film without nucleation |
| US10510590B2 (en) | 2017-04-10 | 2019-12-17 | Lam Research Corporation | Low resistivity films containing molybdenum |
| US11970776B2 (en) | 2020-01-27 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition of metal films |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1182958A (en) | 1998-05-27 |
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