AU2006273264A1 - Semiconductor storage device - Google Patents

Semiconductor storage device Download PDF

Info

Publication number
AU2006273264A1
AU2006273264A1 AU2006273264A AU2006273264A AU2006273264A1 AU 2006273264 A1 AU2006273264 A1 AU 2006273264A1 AU 2006273264 A AU2006273264 A AU 2006273264A AU 2006273264 A AU2006273264 A AU 2006273264A AU 2006273264 A1 AU2006273264 A1 AU 2006273264A1
Authority
AU
Australia
Prior art keywords
data
address
semiconductor memory
memory device
counter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2006273264A
Other languages
English (en)
Inventor
Noboru Asauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of AU2006273264A1 publication Critical patent/AU2006273264A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
AU2006273264A 2005-07-25 2006-07-21 Semiconductor storage device Abandoned AU2006273264A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005213982A JP4839714B2 (ja) 2005-07-25 2005-07-25 シーケンシャルアクセスメモリ
JP2005-213982 2005-07-25
PCT/JP2006/314927 WO2007013568A1 (ja) 2005-07-25 2006-07-21 半導体記憶装置

Publications (1)

Publication Number Publication Date
AU2006273264A1 true AU2006273264A1 (en) 2007-02-01

Family

ID=37678916

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2006273264A Abandoned AU2006273264A1 (en) 2005-07-25 2006-07-21 Semiconductor storage device

Country Status (11)

Country Link
US (1) US7591524B2 (enExample)
EP (1) EP1914756A4 (enExample)
JP (1) JP4839714B2 (enExample)
KR (1) KR20080030106A (enExample)
CN (1) CN101228589B (enExample)
AU (1) AU2006273264A1 (enExample)
BR (1) BRPI0613773A2 (enExample)
CA (1) CA2616350A1 (enExample)
RU (1) RU2008106758A (enExample)
TW (1) TW200713325A (enExample)
WO (1) WO2007013568A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4839714B2 (ja) * 2005-07-25 2011-12-21 セイコーエプソン株式会社 シーケンシャルアクセスメモリ
KR101081193B1 (ko) 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101072034B1 (ko) 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
CN107392291A (zh) * 2017-06-16 2017-11-24 广州市智专信息科技有限公司 一种用于书本的rfid标签，相应的书本生产方法及书本
JP7314656B2 (ja) * 2019-06-28 2023-07-26 セイコーエプソン株式会社 液体吐出装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194142A (ja) * 1984-10-12 1986-05-13 Nec Corp フア−ストイン／フア−ストアウト形メモリ
JPS61213943A (ja) * 1985-03-19 1986-09-22 Nec Corp マイクロコンピユ−タ
US5365312A (en) 1988-07-25 1994-11-15 Mannesmann Ag Arrangement for printer equipment for monitoring reservoirs that contain printing medium
US5049898A (en) * 1989-03-20 1991-09-17 Hewlett-Packard Company Printhead having memory element
DE69034019T2 (de) * 1989-08-05 2003-10-09 Canon K.K., Tokio/Tokyo Tintenkassette
JPH0423300A (ja) * 1990-05-17 1992-01-27 Toyo Commun Equip Co Ltd シフトレジスタ
JPH07219856A (ja) 1994-02-03 1995-08-18 Canon Inc メモリ装置
JP3702016B2 (ja) * 1995-11-27 2005-10-05 三洋電機株式会社 不揮発性メモリ内蔵マイクロコンピュータ
JP3103755B2 (ja) 1995-12-05 2000-10-30 株式会社イルテックス リース物件管理システム
JP3270831B2 (ja) 1998-02-03 2002-04-02 富士通株式会社 半導体装置
JP2001187457A (ja) * 1998-11-26 2001-07-10 Seiko Epson Corp 印刷装置およびカートリッジ
DE60034080T2 (de) * 1999-10-04 2007-12-06 Seiko Epson Corp. Tintenstrahlaufzeichnungsvorrichtung, Halbleitervorrichtung und Aufzeichnungskopfvorrichtung
JP2002067290A (ja) 2000-08-31 2002-03-05 Canon Inc 記録ヘッド、記録装置、及び記録ヘッドと記録装置との間のデータ転送方法
JP4762435B2 (ja) 2001-05-09 2011-08-31 富士通セミコンダクター株式会社 内部カウンタを複数備えた不揮発性半導体記憶装置
JP2003132674A (ja) * 2001-10-26 2003-05-09 Mitsubishi Electric Corp 半導体記憶装置
KR100555506B1 (ko) * 2003-07-11 2006-03-03 삼성전자주식회사 프로그램된 메모리 셀들과 프로그램 및 소거 가능한메모리 셀들을 포함하는 메모리 장치
JP4381750B2 (ja) * 2003-08-28 2009-12-09 株式会社ルネサステクノロジ 半導体集積回路
JP4839714B2 (ja) * 2005-07-25 2011-12-21 セイコーエプソン株式会社 シーケンシャルアクセスメモリ

Also Published As

Publication number Publication date
US7591524B2 (en) 2009-09-22
KR20080030106A (ko) 2008-04-03
RU2008106758A (ru) 2009-09-10
US20070019497A1 (en) 2007-01-25
EP1914756A4 (en) 2009-04-15
WO2007013568A1 (ja) 2007-02-01
EP1914756A1 (en) 2008-04-23
JP2007035120A (ja) 2007-02-08
CN101228589B (zh) 2011-05-11
TW200713325A (en) 2007-04-01
BRPI0613773A2 (pt) 2011-02-01
JP4839714B2 (ja) 2011-12-21
CA2616350A1 (en) 2007-02-01
CN101228589A (zh) 2008-07-23

Similar Documents

Publication Publication Date Title
US10366731B2 (en) Memory devices having special mode access using a serial message
US7791979B2 (en) Semiconductor memory device
US7406576B2 (en) Semiconductor memory device
US5621738A (en) Method for programming flash EEPROM devices
US6421276B1 (en) Method and apparatus for controlling erase operations of a non-volatile memory system
CN111179986B (zh) 操作控制非易失性存储器装置的控制器的方法及存储装置
US7499372B2 (en) Semiconductor memory device
US7591524B2 (en) Semiconductor memory device
KR20010046174A (ko) 불휘발성 메모리의 내부 시험 장치
MX2008001245A (es) Dispositivo de almacenamiento semiconductor.
KR20100133611A (ko) 불휘발성 메모리 장치
EP3783614A1 (en) Nonvolatile memory device including a fast read page and a storage device including the same

Legal Events

Date Code Title Description
MK5 Application lapsed section 142(2)(e) - patent request and compl. specification not accepted