JP4839714B2 - シーケンシャルアクセスメモリ - Google Patents

シーケンシャルアクセスメモリ Download PDF

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Publication number
JP4839714B2
JP4839714B2 JP2005213982A JP2005213982A JP4839714B2 JP 4839714 B2 JP4839714 B2 JP 4839714B2 JP 2005213982 A JP2005213982 A JP 2005213982A JP 2005213982 A JP2005213982 A JP 2005213982A JP 4839714 B2 JP4839714 B2 JP 4839714B2
Authority
JP
Japan
Prior art keywords
address
data
memory device
semiconductor memory
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005213982A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007035120A (ja
JP2007035120A5 (enExample
Inventor
昇 朝内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2005213982A priority Critical patent/JP4839714B2/ja
Priority to US11/458,820 priority patent/US7591524B2/en
Priority to CN2006800272546A priority patent/CN101228589B/zh
Priority to BRPI0613773-3A priority patent/BRPI0613773A2/pt
Priority to MX2008001245A priority patent/MX2008001245A/es
Priority to TW095126784A priority patent/TW200713325A/zh
Priority to EP06781838A priority patent/EP1914756A4/en
Priority to RU2008106758/09A priority patent/RU2008106758A/ru
Priority to KR1020087004357A priority patent/KR20080030106A/ko
Priority to AU2006273264A priority patent/AU2006273264A1/en
Priority to CA002616350A priority patent/CA2616350A1/en
Priority to PCT/JP2006/314927 priority patent/WO2007013568A1/ja
Publication of JP2007035120A publication Critical patent/JP2007035120A/ja
Publication of JP2007035120A5 publication Critical patent/JP2007035120A5/ja
Application granted granted Critical
Publication of JP4839714B2 publication Critical patent/JP4839714B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
JP2005213982A 2005-07-25 2005-07-25 シーケンシャルアクセスメモリ Expired - Fee Related JP4839714B2 (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP2005213982A JP4839714B2 (ja) 2005-07-25 2005-07-25 シーケンシャルアクセスメモリ
US11/458,820 US7591524B2 (en) 2005-07-25 2006-07-20 Semiconductor memory device
AU2006273264A AU2006273264A1 (en) 2005-07-25 2006-07-21 Semiconductor storage device
MX2008001245A MX2008001245A (es) 2005-07-25 2006-07-21 Dispositivo de almacenamiento semiconductor.
TW095126784A TW200713325A (en) 2005-07-25 2006-07-21 Semiconductor memory device
EP06781838A EP1914756A4 (en) 2005-07-25 2006-07-21 SEMICONDUCTOR MEMORY MODULE
CN2006800272546A CN101228589B (zh) 2005-07-25 2006-07-21 半导体存储装置
KR1020087004357A KR20080030106A (ko) 2005-07-25 2006-07-21 반도체 기억 장치
BRPI0613773-3A BRPI0613773A2 (pt) 2005-07-25 2006-07-21 dispositivo de armazenamento semicondutor
CA002616350A CA2616350A1 (en) 2005-07-25 2006-07-21 Semiconductor memory device
PCT/JP2006/314927 WO2007013568A1 (ja) 2005-07-25 2006-07-21 半導体記憶装置
RU2008106758/09A RU2008106758A (ru) 2005-07-25 2006-07-21 Устройство полупроводниковой памяти

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005213982A JP4839714B2 (ja) 2005-07-25 2005-07-25 シーケンシャルアクセスメモリ

Publications (3)

Publication Number Publication Date
JP2007035120A JP2007035120A (ja) 2007-02-08
JP2007035120A5 JP2007035120A5 (enExample) 2008-08-21
JP4839714B2 true JP4839714B2 (ja) 2011-12-21

Family

ID=37678916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005213982A Expired - Fee Related JP4839714B2 (ja) 2005-07-25 2005-07-25 シーケンシャルアクセスメモリ

Country Status (11)

Country Link
US (1) US7591524B2 (enExample)
EP (1) EP1914756A4 (enExample)
JP (1) JP4839714B2 (enExample)
KR (1) KR20080030106A (enExample)
CN (1) CN101228589B (enExample)
AU (1) AU2006273264A1 (enExample)
BR (1) BRPI0613773A2 (enExample)
CA (1) CA2616350A1 (enExample)
RU (1) RU2008106758A (enExample)
TW (1) TW200713325A (enExample)
WO (1) WO2007013568A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4839714B2 (ja) * 2005-07-25 2011-12-21 セイコーエプソン株式会社 シーケンシャルアクセスメモリ
KR101081193B1 (ko) 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101072034B1 (ko) 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
CN107392291A (zh) * 2017-06-16 2017-11-24 广州市智专信息科技有限公司 一种用于书本的rfid标签，相应的书本生产方法及书本
JP7314656B2 (ja) * 2019-06-28 2023-07-26 セイコーエプソン株式会社 液体吐出装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194142A (ja) * 1984-10-12 1986-05-13 Nec Corp フア−ストイン／フア−ストアウト形メモリ
JPS61213943A (ja) * 1985-03-19 1986-09-22 Nec Corp マイクロコンピユ−タ
US5365312A (en) 1988-07-25 1994-11-15 Mannesmann Ag Arrangement for printer equipment for monitoring reservoirs that contain printing medium
US5049898A (en) * 1989-03-20 1991-09-17 Hewlett-Packard Company Printhead having memory element
DE69034019T2 (de) * 1989-08-05 2003-10-09 Canon K.K., Tokio/Tokyo Tintenkassette
JPH0423300A (ja) * 1990-05-17 1992-01-27 Toyo Commun Equip Co Ltd シフトレジスタ
JPH07219856A (ja) 1994-02-03 1995-08-18 Canon Inc メモリ装置
JP3702016B2 (ja) * 1995-11-27 2005-10-05 三洋電機株式会社 不揮発性メモリ内蔵マイクロコンピュータ
JP3103755B2 (ja) 1995-12-05 2000-10-30 株式会社イルテックス リース物件管理システム
JP3270831B2 (ja) 1998-02-03 2002-04-02 富士通株式会社 半導体装置
JP2001187457A (ja) * 1998-11-26 2001-07-10 Seiko Epson Corp 印刷装置およびカートリッジ
DE60034080T2 (de) * 1999-10-04 2007-12-06 Seiko Epson Corp. Tintenstrahlaufzeichnungsvorrichtung, Halbleitervorrichtung und Aufzeichnungskopfvorrichtung
JP2002067290A (ja) 2000-08-31 2002-03-05 Canon Inc 記録ヘッド、記録装置、及び記録ヘッドと記録装置との間のデータ転送方法
JP4762435B2 (ja) 2001-05-09 2011-08-31 富士通セミコンダクター株式会社 内部カウンタを複数備えた不揮発性半導体記憶装置
JP2003132674A (ja) * 2001-10-26 2003-05-09 Mitsubishi Electric Corp 半導体記憶装置
KR100555506B1 (ko) * 2003-07-11 2006-03-03 삼성전자주식회사 프로그램된 메모리 셀들과 프로그램 및 소거 가능한메모리 셀들을 포함하는 메모리 장치
JP4381750B2 (ja) * 2003-08-28 2009-12-09 株式会社ルネサステクノロジ 半導体集積回路
JP4839714B2 (ja) * 2005-07-25 2011-12-21 セイコーエプソン株式会社 シーケンシャルアクセスメモリ

Also Published As

Publication number Publication date
AU2006273264A1 (en) 2007-02-01
US7591524B2 (en) 2009-09-22
KR20080030106A (ko) 2008-04-03
RU2008106758A (ru) 2009-09-10
US20070019497A1 (en) 2007-01-25
EP1914756A4 (en) 2009-04-15
WO2007013568A1 (ja) 2007-02-01
EP1914756A1 (en) 2008-04-23
JP2007035120A (ja) 2007-02-08
CN101228589B (zh) 2011-05-11
TW200713325A (en) 2007-04-01
BRPI0613773A2 (pt) 2011-02-01
CA2616350A1 (en) 2007-02-01
CN101228589A (zh) 2008-07-23

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