KR20080030106A - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR20080030106A
KR20080030106A KR1020087004357A KR20087004357A KR20080030106A KR 20080030106 A KR20080030106 A KR 20080030106A KR 1020087004357 A KR1020087004357 A KR 1020087004357A KR 20087004357 A KR20087004357 A KR 20087004357A KR 20080030106 A KR20080030106 A KR 20080030106A
Authority
KR
South Korea
Prior art keywords
data
address
semiconductor memory
memory device
memory array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087004357A
Other languages
English (en)
Korean (ko)
Inventor
노보루 아사우치
Original Assignee
세이코 엡슨 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세이코 엡슨 가부시키가이샤 filed Critical 세이코 엡슨 가부시키가이샤
Publication of KR20080030106A publication Critical patent/KR20080030106A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
KR1020087004357A 2005-07-25 2006-07-21 반도체 기억 장치 Ceased KR20080030106A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00213982 2005-07-25
JP2005213982A JP4839714B2 (ja) 2005-07-25 2005-07-25 シーケンシャルアクセスメモリ

Publications (1)

Publication Number Publication Date
KR20080030106A true KR20080030106A (ko) 2008-04-03

Family

ID=37678916

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087004357A Ceased KR20080030106A (ko) 2005-07-25 2006-07-21 반도체 기억 장치

Country Status (11)

Country Link
US (1) US7591524B2 (enExample)
EP (1) EP1914756A4 (enExample)
JP (1) JP4839714B2 (enExample)
KR (1) KR20080030106A (enExample)
CN (1) CN101228589B (enExample)
AU (1) AU2006273264A1 (enExample)
BR (1) BRPI0613773A2 (enExample)
CA (1) CA2616350A1 (enExample)
RU (1) RU2008106758A (enExample)
TW (1) TW200713325A (enExample)
WO (1) WO2007013568A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8421105B2 (en) 2009-10-15 2013-04-16 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US8513679B2 (en) 2009-10-15 2013-08-20 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US8772803B2 (en) 2009-10-15 2014-07-08 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4839714B2 (ja) * 2005-07-25 2011-12-21 セイコーエプソン株式会社 シーケンシャルアクセスメモリ
CN107392291A (zh) * 2017-06-16 2017-11-24 广州市智专信息科技有限公司 一种用于书本的rfid标签，相应的书本生产方法及书本
JP7314656B2 (ja) * 2019-06-28 2023-07-26 セイコーエプソン株式会社 液体吐出装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194142A (ja) * 1984-10-12 1986-05-13 Nec Corp フア−ストイン／フア−ストアウト形メモリ
JPS61213943A (ja) * 1985-03-19 1986-09-22 Nec Corp マイクロコンピユ−タ
US5365312A (en) 1988-07-25 1994-11-15 Mannesmann Ag Arrangement for printer equipment for monitoring reservoirs that contain printing medium
US5049898A (en) * 1989-03-20 1991-09-17 Hewlett-Packard Company Printhead having memory element
DE69034019T2 (de) * 1989-08-05 2003-10-09 Canon K.K., Tokio/Tokyo Tintenkassette
JPH0423300A (ja) * 1990-05-17 1992-01-27 Toyo Commun Equip Co Ltd シフトレジスタ
JPH07219856A (ja) 1994-02-03 1995-08-18 Canon Inc メモリ装置
JP3702016B2 (ja) * 1995-11-27 2005-10-05 三洋電機株式会社 不揮発性メモリ内蔵マイクロコンピュータ
JP3103755B2 (ja) 1995-12-05 2000-10-30 株式会社イルテックス リース物件管理システム
JP3270831B2 (ja) 1998-02-03 2002-04-02 富士通株式会社 半導体装置
JP2001187457A (ja) * 1998-11-26 2001-07-10 Seiko Epson Corp 印刷装置およびカートリッジ
DE60034080T2 (de) * 1999-10-04 2007-12-06 Seiko Epson Corp. Tintenstrahlaufzeichnungsvorrichtung, Halbleitervorrichtung und Aufzeichnungskopfvorrichtung
JP2002067290A (ja) 2000-08-31 2002-03-05 Canon Inc 記録ヘッド、記録装置、及び記録ヘッドと記録装置との間のデータ転送方法
JP4762435B2 (ja) 2001-05-09 2011-08-31 富士通セミコンダクター株式会社 内部カウンタを複数備えた不揮発性半導体記憶装置
JP2003132674A (ja) * 2001-10-26 2003-05-09 Mitsubishi Electric Corp 半導体記憶装置
KR100555506B1 (ko) * 2003-07-11 2006-03-03 삼성전자주식회사 프로그램된 메모리 셀들과 프로그램 및 소거 가능한메모리 셀들을 포함하는 메모리 장치
JP4381750B2 (ja) * 2003-08-28 2009-12-09 株式会社ルネサステクノロジ 半導体集積回路
JP4839714B2 (ja) * 2005-07-25 2011-12-21 セイコーエプソン株式会社 シーケンシャルアクセスメモリ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8421105B2 (en) 2009-10-15 2013-04-16 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US8513679B2 (en) 2009-10-15 2013-08-20 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US8772803B2 (en) 2009-10-15 2014-07-08 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US9117971B2 (en) 2009-10-15 2015-08-25 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US9935245B2 (en) 2009-10-15 2018-04-03 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US10636944B2 (en) 2009-10-15 2020-04-28 Lg Innotek Co., Ltd. Semiconductor light-emitting device and method for fabricating the same

Also Published As

Publication number Publication date
AU2006273264A1 (en) 2007-02-01
US7591524B2 (en) 2009-09-22
RU2008106758A (ru) 2009-09-10
US20070019497A1 (en) 2007-01-25
EP1914756A4 (en) 2009-04-15
WO2007013568A1 (ja) 2007-02-01
EP1914756A1 (en) 2008-04-23
JP2007035120A (ja) 2007-02-08
CN101228589B (zh) 2011-05-11
TW200713325A (en) 2007-04-01
BRPI0613773A2 (pt) 2011-02-01
JP4839714B2 (ja) 2011-12-21
CA2616350A1 (en) 2007-02-01
CN101228589A (zh) 2008-07-23

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Legal Events

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A201 Request for examination
PA0105 International application

Patent event date: 20080222

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20080222

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20090923

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20091127

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20090923

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I