CA2616350A1 - Semiconductor memory device - Google Patents

Semiconductor memory device Download PDF

Info

Publication number
CA2616350A1
CA2616350A1 CA002616350A CA2616350A CA2616350A1 CA 2616350 A1 CA2616350 A1 CA 2616350A1 CA 002616350 A CA002616350 A CA 002616350A CA 2616350 A CA2616350 A CA 2616350A CA 2616350 A1 CA2616350 A1 CA 2616350A1
Authority
CA
Canada
Prior art keywords
data
address
semiconductor memory
memory device
counter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002616350A
Other languages
English (en)
French (fr)
Inventor
Noboru Asauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2616350A1 publication Critical patent/CA2616350A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/04Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/08Address circuits; Decoders; Word-line control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
CA002616350A 2005-07-25 2006-07-21 Semiconductor memory device Abandoned CA2616350A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005213982A JP4839714B2 (ja) 2005-07-25 2005-07-25 シーケンシャルアクセスメモリ
JP2005-213982 2005-07-25
PCT/JP2006/314927 WO2007013568A1 (ja) 2005-07-25 2006-07-21 半導体記憶装置

Publications (1)

Publication Number Publication Date
CA2616350A1 true CA2616350A1 (en) 2007-02-01

Family

ID=37678916

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002616350A Abandoned CA2616350A1 (en) 2005-07-25 2006-07-21 Semiconductor memory device

Country Status (11)

Country Link
US (1) US7591524B2 (enExample)
EP (1) EP1914756A4 (enExample)
JP (1) JP4839714B2 (enExample)
KR (1) KR20080030106A (enExample)
CN (1) CN101228589B (enExample)
AU (1) AU2006273264A1 (enExample)
BR (1) BRPI0613773A2 (enExample)
CA (1) CA2616350A1 (enExample)
RU (1) RU2008106758A (enExample)
TW (1) TW200713325A (enExample)
WO (1) WO2007013568A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4839714B2 (ja) * 2005-07-25 2011-12-21 セイコーエプソン株式会社 シーケンシャルアクセスメモリ
KR101081193B1 (ko) 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101072034B1 (ko) 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
CN107392291A (zh) * 2017-06-16 2017-11-24 广州市智专信息科技有限公司 一种用于书本的rfid标签,相应的书本生产方法及书本
JP7314656B2 (ja) * 2019-06-28 2023-07-26 セイコーエプソン株式会社 液体吐出装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194142A (ja) * 1984-10-12 1986-05-13 Nec Corp フア−ストイン/フア−ストアウト形メモリ
JPS61213943A (ja) * 1985-03-19 1986-09-22 Nec Corp マイクロコンピユ−タ
US5365312A (en) 1988-07-25 1994-11-15 Mannesmann Ag Arrangement for printer equipment for monitoring reservoirs that contain printing medium
US5049898A (en) * 1989-03-20 1991-09-17 Hewlett-Packard Company Printhead having memory element
DE69034019T2 (de) * 1989-08-05 2003-10-09 Canon K.K., Tokio/Tokyo Tintenkassette
JPH0423300A (ja) * 1990-05-17 1992-01-27 Toyo Commun Equip Co Ltd シフトレジスタ
JPH07219856A (ja) 1994-02-03 1995-08-18 Canon Inc メモリ装置
JP3702016B2 (ja) * 1995-11-27 2005-10-05 三洋電機株式会社 不揮発性メモリ内蔵マイクロコンピュータ
JP3103755B2 (ja) 1995-12-05 2000-10-30 株式会社イルテックス リース物件管理システム
JP3270831B2 (ja) 1998-02-03 2002-04-02 富士通株式会社 半導体装置
JP2001187457A (ja) * 1998-11-26 2001-07-10 Seiko Epson Corp 印刷装置およびカートリッジ
DE60034080T2 (de) * 1999-10-04 2007-12-06 Seiko Epson Corp. Tintenstrahlaufzeichnungsvorrichtung, Halbleitervorrichtung und Aufzeichnungskopfvorrichtung
JP2002067290A (ja) 2000-08-31 2002-03-05 Canon Inc 記録ヘッド、記録装置、及び記録ヘッドと記録装置との間のデータ転送方法
JP4762435B2 (ja) 2001-05-09 2011-08-31 富士通セミコンダクター株式会社 内部カウンタを複数備えた不揮発性半導体記憶装置
JP2003132674A (ja) * 2001-10-26 2003-05-09 Mitsubishi Electric Corp 半導体記憶装置
KR100555506B1 (ko) * 2003-07-11 2006-03-03 삼성전자주식회사 프로그램된 메모리 셀들과 프로그램 및 소거 가능한메모리 셀들을 포함하는 메모리 장치
JP4381750B2 (ja) * 2003-08-28 2009-12-09 株式会社ルネサステクノロジ 半導体集積回路
JP4839714B2 (ja) * 2005-07-25 2011-12-21 セイコーエプソン株式会社 シーケンシャルアクセスメモリ

Also Published As

Publication number Publication date
AU2006273264A1 (en) 2007-02-01
US7591524B2 (en) 2009-09-22
KR20080030106A (ko) 2008-04-03
RU2008106758A (ru) 2009-09-10
US20070019497A1 (en) 2007-01-25
EP1914756A4 (en) 2009-04-15
WO2007013568A1 (ja) 2007-02-01
EP1914756A1 (en) 2008-04-23
JP2007035120A (ja) 2007-02-08
CN101228589B (zh) 2011-05-11
TW200713325A (en) 2007-04-01
BRPI0613773A2 (pt) 2011-02-01
JP4839714B2 (ja) 2011-12-21
CN101228589A (zh) 2008-07-23

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued