AU2003292305A1 - Method for forming a brittle zone in a substrate by co-implantation - Google Patents

Method for forming a brittle zone in a substrate by co-implantation

Info

Publication number
AU2003292305A1
AU2003292305A1 AU2003292305A AU2003292305A AU2003292305A1 AU 2003292305 A1 AU2003292305 A1 AU 2003292305A1 AU 2003292305 A AU2003292305 A AU 2003292305A AU 2003292305 A AU2003292305 A AU 2003292305A AU 2003292305 A1 AU2003292305 A1 AU 2003292305A1
Authority
AU
Australia
Prior art keywords
principal
implantation
depth
species
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003292305A
Other languages
English (en)
Inventor
Bernard Aspar
Christelle Lagahe
Jean-Francois Michaud
Nicolas Sousbie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of AU2003292305A1 publication Critical patent/AU2003292305A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Silicon Compounds (AREA)
  • Laminated Bodies (AREA)
  • Moulding By Coating Moulds (AREA)
  • Manufacturing Of Printed Wiring (AREA)
AU2003292305A 2002-11-07 2003-10-31 Method for forming a brittle zone in a substrate by co-implantation Abandoned AU2003292305A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0213934A FR2847075B1 (fr) 2002-11-07 2002-11-07 Procede de formation d'une zone fragile dans un substrat par co-implantation
FR02/13934 2002-11-07
PCT/FR2003/003256 WO2004044976A1 (fr) 2002-11-07 2003-10-31 Procede de formation d'une zone fragile dans un substrat par co-implantation

Publications (1)

Publication Number Publication Date
AU2003292305A1 true AU2003292305A1 (en) 2004-06-03

Family

ID=32116441

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003292305A Abandoned AU2003292305A1 (en) 2002-11-07 2003-10-31 Method for forming a brittle zone in a substrate by co-implantation

Country Status (11)

Country Link
US (1) US20070037363A1 (enExample)
EP (1) EP1559138B1 (enExample)
JP (2) JP5258146B2 (enExample)
KR (2) KR101116540B1 (enExample)
CN (1) CN100587940C (enExample)
AT (1) ATE465514T1 (enExample)
AU (1) AU2003292305A1 (enExample)
DE (1) DE60332261D1 (enExample)
FR (1) FR2847075B1 (enExample)
TW (1) TWI323912B (enExample)
WO (1) WO2004044976A1 (enExample)

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FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2830983B1 (fr) 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
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US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
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JP2008513990A (ja) 2004-09-21 2008-05-01 エス．オー．アイ．テック シリコン オン インシュレータ テクノロジーズ 共注入および続いて注入を行うことにより薄層を得るための方法
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FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
DE102005052357A1 (de) 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
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FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US8741740B2 (en) * 2008-10-02 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
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US20110207306A1 (en) * 2010-02-22 2011-08-25 Sarko Cherekdjian Semiconductor structure made using improved ion implantation process
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CN104979425B (zh) * 2014-04-09 2017-03-15 中国科学院上海高等研究院 一种应用于层转移薄膜生长的籽晶阵列的制备方法
US10546915B2 (en) 2017-12-26 2020-01-28 International Business Machines Corporation Buried MIM capacitor structure with landing pads
EP3785293B1 (en) 2018-04-27 2023-06-07 GlobalWafers Co., Ltd. Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate
JP7123182B2 (ja) * 2018-06-08 2022-08-22 グローバルウェーハズ カンパニー リミテッド シリコン箔層の移転方法
FR3091620B1 (fr) * 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture
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Also Published As

Publication number Publication date
WO2004044976A1 (fr) 2004-05-27
ATE465514T1 (de) 2010-05-15
JP2006505941A (ja) 2006-02-16
FR2847075A1 (fr) 2004-05-14
CN1708844A (zh) 2005-12-14
FR2847075B1 (fr) 2005-02-18
KR20110048584A (ko) 2011-05-11
JP5258146B2 (ja) 2013-08-07
CN100587940C (zh) 2010-02-03
EP1559138A1 (fr) 2005-08-03
TW200414320A (en) 2004-08-01
KR101116540B1 (ko) 2012-02-28
US20070037363A1 (en) 2007-02-15
TWI323912B (en) 2010-04-21
KR20050072793A (ko) 2005-07-12
EP1559138B1 (fr) 2010-04-21
DE60332261D1 (de) 2010-06-02
JP2011223011A (ja) 2011-11-04
KR101174594B1 (ko) 2012-08-16

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