ATE64797T1 - Materialien und verfahren zum aetzen von wolframpolyziden unter zuhilfenahme der silizide als maske. - Google Patents

Materialien und verfahren zum aetzen von wolframpolyziden unter zuhilfenahme der silizide als maske.

Info

Publication number
ATE64797T1
ATE64797T1 AT88302403T AT88302403T ATE64797T1 AT E64797 T1 ATE64797 T1 AT E64797T1 AT 88302403 T AT88302403 T AT 88302403T AT 88302403 T AT88302403 T AT 88302403T AT E64797 T1 ATE64797 T1 AT E64797T1
Authority
AT
Austria
Prior art keywords
mask
etching
polycides
silicides
processes
Prior art date
Application number
AT88302403T
Other languages
English (en)
Inventor
Clark S Stone
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE64797T1 publication Critical patent/ATE64797T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Drying Of Semiconductors (AREA)
AT88302403T 1987-03-26 1988-03-18 Materialien und verfahren zum aetzen von wolframpolyziden unter zuhilfenahme der silizide als maske. ATE64797T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/031,105 US4778563A (en) 1987-03-26 1987-03-26 Materials and methods for etching tungsten polycides using silicide as a mask
EP88302403A EP0284308B1 (de) 1987-03-26 1988-03-18 Materialien und Verfahren zum Ätzen von Wolframpolyziden unter Zuhilfenahme der Silizide als Maske

Publications (1)

Publication Number Publication Date
ATE64797T1 true ATE64797T1 (de) 1991-07-15

Family

ID=21857681

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88302403T ATE64797T1 (de) 1987-03-26 1988-03-18 Materialien und verfahren zum aetzen von wolframpolyziden unter zuhilfenahme der silizide als maske.

Country Status (5)

Country Link
US (1) US4778563A (de)
EP (1) EP0284308B1 (de)
JP (1) JPS6477128A (de)
AT (1) ATE64797T1 (de)
DE (1) DE3863376D1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5112435A (en) * 1985-10-11 1992-05-12 Applied Materials, Inc. Materials and methods for etching silicides, polycrystalline silicon and polycides
US5007982A (en) * 1988-07-11 1991-04-16 North American Philips Corporation Reactive ion etching of silicon with hydrogen bromide
US5271799A (en) * 1989-07-20 1993-12-21 Micron Technology, Inc. Anisotropic etch method
US5201993A (en) * 1989-07-20 1993-04-13 Micron Technology, Inc. Anisotropic etch method
US5160408A (en) * 1990-04-27 1992-11-03 Micron Technology, Inc. Method of isotropically dry etching a polysilicon containing runner with pulsed power
US5110411A (en) * 1990-04-27 1992-05-05 Micron Technology, Inc. Method of isotropically dry etching a poly/WSix sandwich structure
US5077236A (en) * 1990-07-02 1991-12-31 Samsung Electronics Co., Ltd. Method of making a pattern of tungsten interconnection
JPH0496223A (ja) * 1990-08-03 1992-03-27 Fujitsu Ltd 半導体装置の製造方法
JP3127454B2 (ja) * 1990-08-08 2001-01-22 ソニー株式会社 シリコン系被エッチング材のエッチング方法
JPH0779102B2 (ja) * 1990-08-23 1995-08-23 富士通株式会社 半導体装置の製造方法
US5169487A (en) * 1990-08-27 1992-12-08 Micron Technology, Inc. Anisotropic etch method
JP3004699B2 (ja) * 1990-09-07 2000-01-31 東京エレクトロン株式会社 プラズマ処理方法
JP3729869B2 (ja) * 1990-09-28 2005-12-21 セイコーエプソン株式会社 半導体装置の製造方法
JP2964605B2 (ja) * 1990-10-04 1999-10-18 ソニー株式会社 ドライエッチング方法
US5094712A (en) * 1990-10-09 1992-03-10 Micron Technology, Inc. One chamber in-situ etch process for oxide and conductive material
US5160407A (en) * 1991-01-02 1992-11-03 Applied Materials, Inc. Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer
US5338398A (en) * 1991-03-28 1994-08-16 Applied Materials, Inc. Tungsten silicide etch process selective to photoresist and oxide
US5418188A (en) * 1991-09-05 1995-05-23 International Business Machines Corporation Method for controlled positioning of a compound layer in a multilayer device
US5358601A (en) * 1991-09-24 1994-10-25 Micron Technology, Inc. Process for isotropically etching semiconductor devices
US5332653A (en) * 1992-07-01 1994-07-26 Motorola, Inc. Process for forming a conductive region without photoresist-related reflective notching damage
US5188980A (en) * 1992-07-06 1993-02-23 United Microelectronics Corporation Inert gas purge for the multilayer poly gate etching improvement
JP2727966B2 (ja) * 1994-06-06 1998-03-18 日本電気株式会社 半導体装置の製造方法
EP0704886A1 (de) * 1994-09-29 1996-04-03 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Ätzverfahren für Kobalt-Silizid-Schichten
US5895255A (en) * 1994-11-30 1999-04-20 Kabushiki Kaisha Toshiba Shallow trench isolation formation with deep trench cap
US5529197A (en) * 1994-12-20 1996-06-25 Siemens Aktiengesellschaft Polysilicon/polycide etch process for sub-micron gate stacks
EP0731501A1 (de) * 1995-03-08 1996-09-11 International Business Machines Corporation Plasmaätzverfahren von einer Oxid/Polyzidstruktur
US5705433A (en) * 1995-08-24 1998-01-06 Applied Materials, Inc. Etching silicon-containing materials by use of silicon-containing compounds
US5874363A (en) * 1996-05-13 1999-02-23 Kabushiki Kaisha Toshiba Polycide etching with HCL and chlorine
EP0851479A1 (de) * 1996-12-24 1998-07-01 STMicroelectronics S.r.l. Verfahren zur Abscheidung einer dielektrischen Vielfachstruktur zur Verbesserung der Planarität von elektronischen Halbleitereinrichtungen
US6562724B1 (en) * 1997-06-09 2003-05-13 Texas Instruments Incorporated Self-aligned stack formation
EP0932190A1 (de) * 1997-12-30 1999-07-28 International Business Machines Corporation Plasmaätzverfahren der Wolframsilicidschicht bei der Herstellung von mehrschichtleitfähigem Gitter
US6436816B1 (en) * 1998-07-31 2002-08-20 Industrial Technology Research Institute Method of electroless plating copper on nitride barrier
KR100430950B1 (ko) * 1998-09-01 2004-06-16 엘지.필립스 엘시디 주식회사 박막트랜지스터 및 그 제조방법
TW501199B (en) 1999-03-05 2002-09-01 Applied Materials Inc Method for enhancing etching of TiSix
US7217652B1 (en) * 2000-09-21 2007-05-15 Spansion Llc Method of forming highly conductive semiconductor structures via plasma etch
EP1599894A4 (de) * 2003-03-03 2010-04-28 Lam Res Corp Verfahren zur verbesserung der profilregelung und n/p-beladung in doppelt dotierten gate-anwendungen
US7141505B2 (en) * 2003-06-27 2006-11-28 Lam Research Corporation Method for bilayer resist plasma etch
DE102005048366A1 (de) * 2005-10-10 2007-04-19 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von defektarmen selbstorganisierten nadelartigen Strukturen mit Nano-Dimensionen im Bereich unterhalb der üblichen Lichtwellenlängen mit großem Aspektverhältnis
CN101952944B (zh) * 2007-11-21 2013-01-02 朗姆研究公司 控制对含钨层的蚀刻微负载的方法及其设备
JP7296912B2 (ja) * 2020-04-07 2023-06-23 東京エレクトロン株式会社 基板処理方法及び基板処理装置
DE102021116587B3 (de) 2021-06-28 2022-07-07 Jenoptik Optical Systems Gmbh Verfahren zum Herstellen einer Ätzmaske, Verfahren zum Ätzen einer Struktur in ein Substrat, Verwendung einer Tetrelschicht

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4422897A (en) * 1982-05-25 1983-12-27 Massachusetts Institute Of Technology Process for selectively etching silicon
NL8500771A (nl) * 1985-03-18 1986-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een op een laag siliciumoxide aanwezige dubbellaag - bestaande uit poly-si en een silicide - in een plasma wordt geetst.
US4613400A (en) * 1985-05-20 1986-09-23 Applied Materials, Inc. In-situ photoresist capping process for plasma etching
US4680086A (en) * 1986-03-20 1987-07-14 Motorola, Inc. Dry etching of multi-layer structures

Also Published As

Publication number Publication date
EP0284308B1 (de) 1991-06-26
DE3863376D1 (de) 1991-08-01
JPS6477128A (en) 1989-03-23
EP0284308A1 (de) 1988-09-28
US4778563A (en) 1988-10-18

Similar Documents

Publication Publication Date Title
DE3863376D1 (de) Materialien und verfahren zum aetzen von wolframpolyziden unter zuhilfenahme der silizide als maske.
WO1998002913A3 (en) Method of forming a gate electrode for an igfet
EP0338889A3 (de) Herstellungsverfahren von Rasterlinien auf einem wafer
JPS5359371A (en) Mask alignment unit
KR950034748A (ko) 포토레지스트 패턴 형성방법
JPS6425986A (en) Selective formation of silicon dioxide film
KR100268912B1 (en) Method for etching of semiconductor device
JPS52154367A (en) Production of semiconductor device
JPS532082A (en) Photo etching mask
JPS5732639A (en) Production of semiconductor device
KR960001855B1 (en) Method of positive type resist patterning using silylation
JPS568822A (en) Manufacture of semiconductor device
KR970007438B1 (en) Photoresist pattern formation process
JPS5384477A (en) Forming method of dry etching mask
JPS6466942A (en) Formation of thin-film pattern
RU96120357A (ru) Способ травления карбида кремния
JPS6422028A (en) Forming method for pattern
WO1987006029A3 (en) Pattern transfer process for fabricating integrated-circuit devices
KR0126635B1 (en) Fine patterning method of semiconductor device
JPS5384689A (en) Production of semiconductor device
JPS52152171A (en) Wafer alignment method
JPS5461475A (en) Poly-film etching method
GB1453253A (en) Photomasking method
JPS5340282A (en) Manufacture of semiconductor unit
JPS5570835A (en) Photoresist material and etching method

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties