GB1453253A - Photomasking method - Google Patents

Photomasking method

Info

Publication number
GB1453253A
GB1453253A GB2948174A GB2948174A GB1453253A GB 1453253 A GB1453253 A GB 1453253A GB 2948174 A GB2948174 A GB 2948174A GB 2948174 A GB2948174 A GB 2948174A GB 1453253 A GB1453253 A GB 1453253A
Authority
GB
United Kingdom
Prior art keywords
layer
resist
photo
mask
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2948174A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1453253A publication Critical patent/GB1453253A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

1453253 Photomasking methods; materials therefor PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 3 July 1974 [6 July 1973] 29481/74 Heading G2X and G2C A photographic process which comprises coating a support with a photo-resist and forming a metallic mask thereon, the metallic mask being formed in situ in direct contact with the photo-resist layer, and exposing the resist to the mask, developing the resist and then either etching the bared support or depositing material thereon. The metallic mask may be formed either (i) by applying an opaque metal layer to the photo-resist, then a second photoresist layer, imagewise exposing and developing the photo-resist and etching the metal layer or (ii) by applying a metallic pattern to the first photo-resist layer. As shown a silicon support 21 with a SiO 2 layer 22 thereon is provided with a Ni/Fe layer 16, a positive-working photo-resisf layer 24, an opaque Ni layer 25 and a second positive working resist layer 26. The material is imagewise exposed via a chromium mask and layer 26 developed to remove exposed areas and layer 25 etched to produce a photomask. This mask is used to expose layer 24 and remaining areas of layer 26 and then developed to remove exposed areas of layer 24 and rest of layer 26. Bared areas of layer 16 are now removed or alternatively Au or Al may be deposited on layer 16.
GB2948174A 1973-07-06 1974-07-03 Photomasking method Expired GB1453253A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7309451A NL7309451A (en) 1973-07-06 1973-07-06 METHOD OF MANUFACTURING A DEVICE.

Publications (1)

Publication Number Publication Date
GB1453253A true GB1453253A (en) 1976-10-20

Family

ID=19819217

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2948174A Expired GB1453253A (en) 1973-07-06 1974-07-03 Photomasking method

Country Status (7)

Country Link
JP (1) JPS5071273A (en)
CA (1) CA1032397A (en)
DE (1) DE2431311C3 (en)
FR (1) FR2236336B1 (en)
GB (1) GB1453253A (en)
IT (1) IT1037067B (en)
NL (1) NL7309451A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2224861A (en) * 1988-11-04 1990-05-16 Gen Electric Co Plc Photoresist process for depositing material

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4165395A (en) * 1977-06-30 1979-08-21 International Business Machines Corporation Process for forming a high aspect ratio structure by successive exposures with electron beam and actinic radiation
US4985116A (en) * 1990-02-23 1991-01-15 Mint-Pac Technologies, Inc. Three dimensional plating or etching process and masks therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3518084A (en) * 1967-01-09 1970-06-30 Ibm Method for etching an opening in an insulating layer without forming pinholes therein

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2224861A (en) * 1988-11-04 1990-05-16 Gen Electric Co Plc Photoresist process for depositing material
US5169737A (en) * 1988-11-04 1992-12-08 The General Electric Company, P.L.C. Deposition processes
GB2224861B (en) * 1988-11-04 1993-03-10 Gen Electric Co Plc Deposition processes

Also Published As

Publication number Publication date
NL7309451A (en) 1975-01-08
JPS5071273A (en) 1975-06-13
DE2431311A1 (en) 1975-01-30
FR2236336B1 (en) 1977-10-07
IT1037067B (en) 1979-11-10
CA1032397A (en) 1978-06-06
FR2236336A1 (en) 1975-01-31
DE2431311C3 (en) 1981-07-02
DE2431311B2 (en) 1980-08-21

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee