ATE535016T1 - Verfahren zur vorbereitung von halbleitersubstraten und zertrennung - Google Patents
Verfahren zur vorbereitung von halbleitersubstraten und zertrennungInfo
- Publication number
- ATE535016T1 ATE535016T1 AT04795531T AT04795531T ATE535016T1 AT E535016 T1 ATE535016 T1 AT E535016T1 AT 04795531 T AT04795531 T AT 04795531T AT 04795531 T AT04795531 T AT 04795531T AT E535016 T1 ATE535016 T1 AT E535016T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- preparing
- laser light
- semiconductor substrates
- separating semiconductor
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/3568—Modifying rugosity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
- B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mining & Mineral Resources (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/733,845 US7008861B2 (en) | 2003-12-11 | 2003-12-11 | Semiconductor substrate assemblies and methods for preparing and dicing the same |
PCT/US2004/034384 WO2005062376A1 (en) | 2003-12-11 | 2004-10-18 | Semiconductor substrate assemblies and methods for preparing and dicing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE535016T1 true ATE535016T1 (de) | 2011-12-15 |
Family
ID=34653218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04795531T ATE535016T1 (de) | 2003-12-11 | 2004-10-18 | Verfahren zur vorbereitung von halbleitersubstraten und zertrennung |
Country Status (10)
Country | Link |
---|---|
US (1) | US7008861B2 (de) |
EP (1) | EP1692719B1 (de) |
JP (1) | JP2007514315A (de) |
KR (1) | KR20060105015A (de) |
CN (1) | CN1890797A (de) |
AT (1) | ATE535016T1 (de) |
CA (1) | CA2546632A1 (de) |
MY (1) | MY140097A (de) |
TW (1) | TWI359507B (de) |
WO (1) | WO2005062376A1 (de) |
Families Citing this family (71)
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JP4439990B2 (ja) * | 2004-04-28 | 2010-03-24 | 株式会社ディスコ | レーザー加工方法 |
JP4733934B2 (ja) * | 2004-06-22 | 2011-07-27 | 株式会社ディスコ | ウエーハの加工方法 |
US7550367B2 (en) * | 2004-08-17 | 2009-06-23 | Denso Corporation | Method for separating semiconductor substrate |
US20060057777A1 (en) * | 2004-09-14 | 2006-03-16 | Howell William C | Separating die on a substrate to reduce backside chipping |
US20060258051A1 (en) * | 2005-05-10 | 2006-11-16 | Texas Instruments Incorporated | Method and system for solder die attach |
JP2007158132A (ja) * | 2005-12-06 | 2007-06-21 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子及びその製造方法 |
JP4942313B2 (ja) * | 2005-07-07 | 2012-05-30 | 株式会社ディスコ | ウエーハのレーザー加工方法 |
US20070040182A1 (en) * | 2005-08-16 | 2007-02-22 | Julian Lee | Light emitting diode packaging structure |
US7176053B1 (en) * | 2005-08-16 | 2007-02-13 | Organicid, Inc. | Laser ablation method for fabricating high performance organic devices |
US7687322B1 (en) * | 2005-10-11 | 2010-03-30 | SemiLEDs Optoelectronics Co., Ltd. | Method for removing semiconductor street material |
JP2007134454A (ja) * | 2005-11-09 | 2007-05-31 | Toshiba Corp | 半導体装置の製造方法 |
JP2007173475A (ja) * | 2005-12-21 | 2007-07-05 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2007184426A (ja) * | 2006-01-06 | 2007-07-19 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2007317747A (ja) * | 2006-05-23 | 2007-12-06 | Seiko Epson Corp | 基板分割方法及び液体噴射ヘッドの製造方法 |
JP2008003577A (ja) * | 2006-05-25 | 2008-01-10 | Canon Inc | 画像表示装置の製造方法および分断方法 |
JP5196097B2 (ja) * | 2006-08-29 | 2013-05-15 | 日亜化学工業株式会社 | 半導体発光素子の製造方法及び半導体発光素子、並びにそれを用いた発光装置 |
KR101262386B1 (ko) | 2006-09-25 | 2013-05-08 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자의 제조 방법 |
JP4306717B2 (ja) * | 2006-11-09 | 2009-08-05 | セイコーエプソン株式会社 | シリコンデバイスの製造方法及び液体噴射ヘッドの製造方法 |
JP5109363B2 (ja) * | 2006-12-15 | 2012-12-26 | 日亜化学工業株式会社 | 半導体発光素子の製造方法、半導体発光素子及び発光装置 |
US20080195507A1 (en) * | 2007-01-01 | 2008-08-14 | Nitesh Ratnakar | Virtual Online Store |
US8143081B2 (en) * | 2007-02-13 | 2012-03-27 | Huga Optotech Inc. | Method for dicing a diced optoelectronic semiconductor wafer |
JP4290745B2 (ja) * | 2007-03-16 | 2009-07-08 | 豊田合成株式会社 | Iii−v族半導体素子の製造方法 |
US8119501B2 (en) * | 2007-05-17 | 2012-02-21 | Agere Systems Inc. | Method for separating a semiconductor wafer into individual semiconductor dies using an implanted impurity |
JP2009152245A (ja) * | 2007-12-18 | 2009-07-09 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2009206162A (ja) * | 2008-02-26 | 2009-09-10 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
US8463116B2 (en) | 2008-07-01 | 2013-06-11 | Tap Development Limited Liability Company | Systems for curing deposited material using feedback control |
JP2010050175A (ja) * | 2008-08-20 | 2010-03-04 | Disco Abrasive Syst Ltd | レーザー加工方法及びレーザー加工装置 |
US20100081255A1 (en) * | 2008-09-29 | 2010-04-01 | Erasenthiran Poonjolai | Methods for reducing defects through selective laser scribing |
TW201017863A (en) * | 2008-10-03 | 2010-05-01 | Versitech Ltd | Semiconductor color-tunable broadband light sources and full-color microdisplays |
JP2010103424A (ja) * | 2008-10-27 | 2010-05-06 | Showa Denko Kk | 半導体発光素子の製造方法 |
JP5525601B2 (ja) * | 2009-06-04 | 2014-06-18 | コアレイズ オーワイ | レーザを用いた基板加工方法 |
TWI403003B (zh) * | 2009-10-02 | 2013-07-21 | Chi Mei Lighting Tech Corp | 發光二極體及其製造方法 |
DE102010009015A1 (de) | 2010-02-24 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips |
US8232117B2 (en) * | 2010-04-30 | 2012-07-31 | Koninklijke Philips Electronics N.V. | LED wafer with laminated phosphor layer |
JP5770446B2 (ja) * | 2010-09-30 | 2015-08-26 | 株式会社ディスコ | 分割方法 |
US8703517B2 (en) | 2010-10-29 | 2014-04-22 | Denso Corporation | Method of Manufacturing a Semiconductor Device Including Removing a Reformed Layer |
JP5758116B2 (ja) * | 2010-12-16 | 2015-08-05 | 株式会社ディスコ | 分割方法 |
CN102544246A (zh) * | 2010-12-20 | 2012-07-04 | 展晶科技(深圳)有限公司 | 发光二极管晶粒的制作方法 |
JP5480169B2 (ja) | 2011-01-13 | 2014-04-23 | 浜松ホトニクス株式会社 | レーザ加工方法 |
US8809120B2 (en) | 2011-02-17 | 2014-08-19 | Infineon Technologies Ag | Method of dicing a wafer |
DE102011011862A1 (de) * | 2011-02-21 | 2012-08-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl optoelektronischer Halbleiterchips |
JP2013058624A (ja) * | 2011-09-08 | 2013-03-28 | Mitsubishi Electric Corp | レーザダイオード素子の製造方法 |
WO2013118072A2 (en) * | 2012-02-10 | 2013-08-15 | Koninklijke Philips N.V. | Wavelength converted light emitting device |
JP5914060B2 (ja) * | 2012-03-09 | 2016-05-11 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
WO2013150427A1 (en) * | 2012-04-05 | 2013-10-10 | Koninklijke Philips N.V. | Led thin-film device partial singulation prior to substrate thinning or removal |
JP6011002B2 (ja) * | 2012-04-23 | 2016-10-19 | セイコーエプソン株式会社 | 液体噴射ヘッドの製造方法、及び、液体噴射装置の製造方法 |
US10186458B2 (en) | 2012-07-05 | 2019-01-22 | Infineon Technologies Ag | Component and method of manufacturing a component using an ultrathin carrier |
KR20150060758A (ko) * | 2012-10-02 | 2015-06-03 | 피에스4 뤽스코 에스.에이.알.엘. | 반도체 장치 및 그 제조방법 |
US8809166B2 (en) * | 2012-12-20 | 2014-08-19 | Nxp B.V. | High die strength semiconductor wafer processing method and system |
US20140217577A1 (en) * | 2013-02-04 | 2014-08-07 | Infineon Technologies Ag | Semiconductor Device and Method for Manufacturing a Semiconductor Device |
JP6568062B2 (ja) * | 2013-07-18 | 2019-08-28 | ルミレッズ ホールディング ベーフェー | 発光デバイスのウェファのダイシング |
US9289856B2 (en) * | 2013-07-29 | 2016-03-22 | Fike Corporation | Creation of laser-defined structures on pressure relief devices via tiling method |
JP6255192B2 (ja) * | 2013-09-04 | 2017-12-27 | 株式会社ディスコ | 光デバイス及び光デバイスの加工方法 |
JP2015053428A (ja) * | 2013-09-09 | 2015-03-19 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
EP3063786B1 (de) * | 2013-10-29 | 2022-01-12 | Lumileds LLC | Zerteilung eines wafers aus halbleiterbauelementen |
DE102015109413A1 (de) * | 2015-06-12 | 2016-12-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Konversions-Halbleiterchips und Verbund von Konversions-Halbleiterchips |
WO2017078368A1 (ko) * | 2015-11-05 | 2017-05-11 | 서울바이오시스주식회사 | 자외선 발광 소자 및 그것을 제조하는 방법 |
US10720360B2 (en) | 2016-07-29 | 2020-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor die singulation and structures formed thereby |
DE102016224978B4 (de) | 2016-12-14 | 2022-12-29 | Disco Corporation | Substratbearbeitungsverfahren |
DE102017200631B4 (de) * | 2017-01-17 | 2022-12-29 | Disco Corporation | Verfahren zum Bearbeiten eines Substrats |
JP6814646B2 (ja) * | 2017-01-23 | 2021-01-20 | 株式会社ディスコ | 光デバイスウェーハの加工方法 |
DE102017113949A1 (de) | 2017-06-23 | 2018-12-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
CN107863423A (zh) * | 2017-10-26 | 2018-03-30 | 江苏新广联半导体有限公司 | Led倒装芯片蓝宝石出光面图形化的制作方法 |
CN108133984B (zh) * | 2018-01-30 | 2020-05-19 | 厦门乾照光电股份有限公司 | 一种垂直结构发光二极管及其制作方法 |
DE102018111227A1 (de) * | 2018-05-09 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines epitaktisch gewachsenen Halbleiterkörpers und Halbleiterchip |
DE102018003982A1 (de) * | 2018-05-17 | 2019-11-21 | 3-5 Power Electronics GmbH | Halbleiterbauelementherstellungsverfahren und Halbleiterbauelement |
US11289378B2 (en) | 2019-06-13 | 2022-03-29 | Wolfspeed, Inc. | Methods for dicing semiconductor wafers and semiconductor devices made by the methods |
CN114424323B (zh) | 2020-02-21 | 2022-08-09 | 新唐科技日本株式会社 | 单片化方法 |
US11887945B2 (en) * | 2020-09-30 | 2024-01-30 | Wolfspeed, Inc. | Semiconductor device with isolation and/or protection structures |
CN113875027A (zh) * | 2021-06-02 | 2021-12-31 | 泉州三安半导体科技有限公司 | 发光二极管及其制作方法 |
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-
2003
- 2003-12-11 US US10/733,845 patent/US7008861B2/en not_active Expired - Lifetime
-
2004
- 2004-10-18 KR KR1020067011055A patent/KR20060105015A/ko not_active Application Discontinuation
- 2004-10-18 WO PCT/US2004/034384 patent/WO2005062376A1/en active Application Filing
- 2004-10-18 CN CNA2004800366370A patent/CN1890797A/zh active Pending
- 2004-10-18 JP JP2006543804A patent/JP2007514315A/ja active Pending
- 2004-10-18 CA CA002546632A patent/CA2546632A1/en not_active Abandoned
- 2004-10-18 TW TW093131561A patent/TWI359507B/zh active
- 2004-10-18 AT AT04795531T patent/ATE535016T1/de active
- 2004-10-18 EP EP04795531A patent/EP1692719B1/de active Active
- 2004-10-30 MY MYPI20044501A patent/MY140097A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW200527711A (en) | 2005-08-16 |
US7008861B2 (en) | 2006-03-07 |
TWI359507B (en) | 2012-03-01 |
US20050130390A1 (en) | 2005-06-16 |
CA2546632A1 (en) | 2005-07-07 |
EP1692719B1 (de) | 2011-11-23 |
JP2007514315A (ja) | 2007-05-31 |
CN1890797A (zh) | 2007-01-03 |
MY140097A (en) | 2009-11-30 |
EP1692719A1 (de) | 2006-08-23 |
WO2005062376A1 (en) | 2005-07-07 |
KR20060105015A (ko) | 2006-10-09 |
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