ATE535016T1 - Verfahren zur vorbereitung von halbleitersubstraten und zertrennung - Google Patents

Verfahren zur vorbereitung von halbleitersubstraten und zertrennung

Info

Publication number
ATE535016T1
ATE535016T1 AT04795531T AT04795531T ATE535016T1 AT E535016 T1 ATE535016 T1 AT E535016T1 AT 04795531 T AT04795531 T AT 04795531T AT 04795531 T AT04795531 T AT 04795531T AT E535016 T1 ATE535016 T1 AT E535016T1
Authority
AT
Austria
Prior art keywords
substrate
preparing
laser light
semiconductor substrates
separating semiconductor
Prior art date
Application number
AT04795531T
Other languages
English (en)
Inventor
Peter Andrews
Elbert Brown
Gerald H Negley
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE535016T1 publication Critical patent/ATE535016T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568Modifying rugosity
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/359Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0095Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mining & Mineral Resources (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT04795531T 2003-12-11 2004-10-18 Verfahren zur vorbereitung von halbleitersubstraten und zertrennung ATE535016T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/733,845 US7008861B2 (en) 2003-12-11 2003-12-11 Semiconductor substrate assemblies and methods for preparing and dicing the same
PCT/US2004/034384 WO2005062376A1 (en) 2003-12-11 2004-10-18 Semiconductor substrate assemblies and methods for preparing and dicing the same

Publications (1)

Publication Number Publication Date
ATE535016T1 true ATE535016T1 (de) 2011-12-15

Family

ID=34653218

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04795531T ATE535016T1 (de) 2003-12-11 2004-10-18 Verfahren zur vorbereitung von halbleitersubstraten und zertrennung

Country Status (10)

Country Link
US (1) US7008861B2 (de)
EP (1) EP1692719B1 (de)
JP (1) JP2007514315A (de)
KR (1) KR20060105015A (de)
CN (1) CN1890797A (de)
AT (1) ATE535016T1 (de)
CA (1) CA2546632A1 (de)
MY (1) MY140097A (de)
TW (1) TWI359507B (de)
WO (1) WO2005062376A1 (de)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319915A (ja) * 2003-04-18 2004-11-11 Sharp Corp 半導体レーザー装置の製造方法および半導体レーザー装置
JP4439990B2 (ja) * 2004-04-28 2010-03-24 株式会社ディスコ レーザー加工方法
JP4733934B2 (ja) * 2004-06-22 2011-07-27 株式会社ディスコ ウエーハの加工方法
US7550367B2 (en) * 2004-08-17 2009-06-23 Denso Corporation Method for separating semiconductor substrate
US20060057777A1 (en) * 2004-09-14 2006-03-16 Howell William C Separating die on a substrate to reduce backside chipping
US20060258051A1 (en) * 2005-05-10 2006-11-16 Texas Instruments Incorporated Method and system for solder die attach
JP2007158132A (ja) * 2005-12-06 2007-06-21 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体素子及びその製造方法
JP4942313B2 (ja) * 2005-07-07 2012-05-30 株式会社ディスコ ウエーハのレーザー加工方法
US20070040182A1 (en) * 2005-08-16 2007-02-22 Julian Lee Light emitting diode packaging structure
US7176053B1 (en) * 2005-08-16 2007-02-13 Organicid, Inc. Laser ablation method for fabricating high performance organic devices
US7687322B1 (en) * 2005-10-11 2010-03-30 SemiLEDs Optoelectronics Co., Ltd. Method for removing semiconductor street material
JP2007134454A (ja) * 2005-11-09 2007-05-31 Toshiba Corp 半導体装置の製造方法
JP2007173475A (ja) * 2005-12-21 2007-07-05 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2007184426A (ja) * 2006-01-06 2007-07-19 Shinko Electric Ind Co Ltd 半導体装置の製造方法
JP2007317747A (ja) * 2006-05-23 2007-12-06 Seiko Epson Corp 基板分割方法及び液体噴射ヘッドの製造方法
JP2008003577A (ja) * 2006-05-25 2008-01-10 Canon Inc 画像表示装置の製造方法および分断方法
JP5196097B2 (ja) * 2006-08-29 2013-05-15 日亜化学工業株式会社 半導体発光素子の製造方法及び半導体発光素子、並びにそれを用いた発光装置
KR101262386B1 (ko) 2006-09-25 2013-05-08 엘지이노텍 주식회사 질화물 반도체 발광소자의 제조 방법
JP4306717B2 (ja) * 2006-11-09 2009-08-05 セイコーエプソン株式会社 シリコンデバイスの製造方法及び液体噴射ヘッドの製造方法
JP5109363B2 (ja) * 2006-12-15 2012-12-26 日亜化学工業株式会社 半導体発光素子の製造方法、半導体発光素子及び発光装置
US20080195507A1 (en) * 2007-01-01 2008-08-14 Nitesh Ratnakar Virtual Online Store
US8143081B2 (en) * 2007-02-13 2012-03-27 Huga Optotech Inc. Method for dicing a diced optoelectronic semiconductor wafer
JP4290745B2 (ja) * 2007-03-16 2009-07-08 豊田合成株式会社 Iii−v族半導体素子の製造方法
US8119501B2 (en) * 2007-05-17 2012-02-21 Agere Systems Inc. Method for separating a semiconductor wafer into individual semiconductor dies using an implanted impurity
JP2009152245A (ja) * 2007-12-18 2009-07-09 Shinko Electric Ind Co Ltd 半導体装置の製造方法
JP2009206162A (ja) * 2008-02-26 2009-09-10 Disco Abrasive Syst Ltd ウエーハの分割方法
US8463116B2 (en) 2008-07-01 2013-06-11 Tap Development Limited Liability Company Systems for curing deposited material using feedback control
JP2010050175A (ja) * 2008-08-20 2010-03-04 Disco Abrasive Syst Ltd レーザー加工方法及びレーザー加工装置
US20100081255A1 (en) * 2008-09-29 2010-04-01 Erasenthiran Poonjolai Methods for reducing defects through selective laser scribing
TW201017863A (en) * 2008-10-03 2010-05-01 Versitech Ltd Semiconductor color-tunable broadband light sources and full-color microdisplays
JP2010103424A (ja) * 2008-10-27 2010-05-06 Showa Denko Kk 半導体発光素子の製造方法
JP5525601B2 (ja) * 2009-06-04 2014-06-18 コアレイズ オーワイ レーザを用いた基板加工方法
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
DE102010009015A1 (de) 2010-02-24 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips
US8232117B2 (en) * 2010-04-30 2012-07-31 Koninklijke Philips Electronics N.V. LED wafer with laminated phosphor layer
JP5770446B2 (ja) * 2010-09-30 2015-08-26 株式会社ディスコ 分割方法
US8703517B2 (en) 2010-10-29 2014-04-22 Denso Corporation Method of Manufacturing a Semiconductor Device Including Removing a Reformed Layer
JP5758116B2 (ja) * 2010-12-16 2015-08-05 株式会社ディスコ 分割方法
CN102544246A (zh) * 2010-12-20 2012-07-04 展晶科技(深圳)有限公司 发光二极管晶粒的制作方法
JP5480169B2 (ja) 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
US8809120B2 (en) 2011-02-17 2014-08-19 Infineon Technologies Ag Method of dicing a wafer
DE102011011862A1 (de) * 2011-02-21 2012-08-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl optoelektronischer Halbleiterchips
JP2013058624A (ja) * 2011-09-08 2013-03-28 Mitsubishi Electric Corp レーザダイオード素子の製造方法
WO2013118072A2 (en) * 2012-02-10 2013-08-15 Koninklijke Philips N.V. Wavelength converted light emitting device
JP5914060B2 (ja) * 2012-03-09 2016-05-11 三菱電機株式会社 炭化珪素半導体装置の製造方法
WO2013150427A1 (en) * 2012-04-05 2013-10-10 Koninklijke Philips N.V. Led thin-film device partial singulation prior to substrate thinning or removal
JP6011002B2 (ja) * 2012-04-23 2016-10-19 セイコーエプソン株式会社 液体噴射ヘッドの製造方法、及び、液体噴射装置の製造方法
US10186458B2 (en) 2012-07-05 2019-01-22 Infineon Technologies Ag Component and method of manufacturing a component using an ultrathin carrier
KR20150060758A (ko) * 2012-10-02 2015-06-03 피에스4 뤽스코 에스.에이.알.엘. 반도체 장치 및 그 제조방법
US8809166B2 (en) * 2012-12-20 2014-08-19 Nxp B.V. High die strength semiconductor wafer processing method and system
US20140217577A1 (en) * 2013-02-04 2014-08-07 Infineon Technologies Ag Semiconductor Device and Method for Manufacturing a Semiconductor Device
JP6568062B2 (ja) * 2013-07-18 2019-08-28 ルミレッズ ホールディング ベーフェー 発光デバイスのウェファのダイシング
US9289856B2 (en) * 2013-07-29 2016-03-22 Fike Corporation Creation of laser-defined structures on pressure relief devices via tiling method
JP6255192B2 (ja) * 2013-09-04 2017-12-27 株式会社ディスコ 光デバイス及び光デバイスの加工方法
JP2015053428A (ja) * 2013-09-09 2015-03-19 住友電気工業株式会社 炭化珪素半導体装置の製造方法
EP3063786B1 (de) * 2013-10-29 2022-01-12 Lumileds LLC Zerteilung eines wafers aus halbleiterbauelementen
DE102015109413A1 (de) * 2015-06-12 2016-12-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Konversions-Halbleiterchips und Verbund von Konversions-Halbleiterchips
WO2017078368A1 (ko) * 2015-11-05 2017-05-11 서울바이오시스주식회사 자외선 발광 소자 및 그것을 제조하는 방법
US10720360B2 (en) 2016-07-29 2020-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor die singulation and structures formed thereby
DE102016224978B4 (de) 2016-12-14 2022-12-29 Disco Corporation Substratbearbeitungsverfahren
DE102017200631B4 (de) * 2017-01-17 2022-12-29 Disco Corporation Verfahren zum Bearbeiten eines Substrats
JP6814646B2 (ja) * 2017-01-23 2021-01-20 株式会社ディスコ 光デバイスウェーハの加工方法
DE102017113949A1 (de) 2017-06-23 2018-12-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN107863423A (zh) * 2017-10-26 2018-03-30 江苏新广联半导体有限公司 Led倒装芯片蓝宝石出光面图形化的制作方法
CN108133984B (zh) * 2018-01-30 2020-05-19 厦门乾照光电股份有限公司 一种垂直结构发光二极管及其制作方法
DE102018111227A1 (de) * 2018-05-09 2019-11-14 Osram Opto Semiconductors Gmbh Verfahren zum Durchtrennen eines epitaktisch gewachsenen Halbleiterkörpers und Halbleiterchip
DE102018003982A1 (de) * 2018-05-17 2019-11-21 3-5 Power Electronics GmbH Halbleiterbauelementherstellungsverfahren und Halbleiterbauelement
US11289378B2 (en) 2019-06-13 2022-03-29 Wolfspeed, Inc. Methods for dicing semiconductor wafers and semiconductor devices made by the methods
CN114424323B (zh) 2020-02-21 2022-08-09 新唐科技日本株式会社 单片化方法
US11887945B2 (en) * 2020-09-30 2024-01-30 Wolfspeed, Inc. Semiconductor device with isolation and/or protection structures
CN113875027A (zh) * 2021-06-02 2021-12-31 泉州三安半导体科技有限公司 发光二极管及其制作方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3626141A (en) * 1970-04-30 1971-12-07 Quantronix Corp Laser scribing apparatus
US3816700A (en) * 1971-10-21 1974-06-11 Union Carbide Corp Apparatus for facilitating laser scribing
US3970819A (en) * 1974-11-25 1976-07-20 International Business Machines Corporation Backside laser dicing system
US4325182A (en) 1980-08-25 1982-04-20 General Electric Company Fast isolation diffusion
US4355457A (en) * 1980-10-29 1982-10-26 Rca Corporation Method of forming a mesa in a semiconductor device with subsequent separation into individual devices
US4966862A (en) 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
JPH07120646B2 (ja) * 1990-05-16 1995-12-20 株式会社東芝 メサ型半導体ペレットの製造方法
DE4305296C3 (de) 1993-02-20 1999-07-15 Vishay Semiconductor Gmbh Verfahren zum Herstellen einer strahlungsemittierenden Diode
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5543365A (en) * 1994-12-02 1996-08-06 Texas Instruments Incorporated Wafer scribe technique using laser by forming polysilicon
JP3176535B2 (ja) 1995-06-21 2001-06-18 株式会社小糸製作所 車両用灯具
KR970008386A (ko) 1995-07-07 1997-02-24 하라 세이지 기판의 할단(割斷)방법 및 그 할단장치
DE19536438A1 (de) 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren
JPH09270528A (ja) 1996-03-29 1997-10-14 Sanyo Electric Co Ltd 発光ダイオード素子及びその製造方法
DE19624677A1 (de) * 1996-06-20 1998-01-02 Siemens Ag Verfahren zur Vereinzelung von optoelektrischen Bauelementen
US5923946A (en) 1997-04-17 1999-07-13 Cree Research, Inc. Recovery of surface-ready silicon carbide substrates
US6413839B1 (en) 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6211488B1 (en) * 1998-12-01 2001-04-03 Accudyne Display And Semiconductor Systems, Inc. Method and apparatus for separating non-metallic substrates utilizing a laser initiated scribe
DE10054966A1 (de) 2000-11-06 2002-05-16 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik
KR100701013B1 (ko) * 2001-05-21 2007-03-29 삼성전자주식회사 레이저 빔을 이용한 비금속 기판의 절단방법 및 장치
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
DE10148227B4 (de) 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
JP2003338636A (ja) 2002-03-12 2003-11-28 Hamamatsu Photonics Kk 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子
US6580054B1 (en) 2002-06-10 2003-06-17 New Wave Research Scribing sapphire substrates with a solid state UV laser

Also Published As

Publication number Publication date
TW200527711A (en) 2005-08-16
US7008861B2 (en) 2006-03-07
TWI359507B (en) 2012-03-01
US20050130390A1 (en) 2005-06-16
CA2546632A1 (en) 2005-07-07
EP1692719B1 (de) 2011-11-23
JP2007514315A (ja) 2007-05-31
CN1890797A (zh) 2007-01-03
MY140097A (en) 2009-11-30
EP1692719A1 (de) 2006-08-23
WO2005062376A1 (en) 2005-07-07
KR20060105015A (ko) 2006-10-09

Similar Documents

Publication Publication Date Title
ATE535016T1 (de) Verfahren zur vorbereitung von halbleitersubstraten und zertrennung
TWI263337B (en) Semiconductor device and semiconductor device producing system
SG144928A1 (en) Method of forming a scribe line on a passive electronic component substrate
FR2849530B1 (fr) Masque pour solidification laterale sequentielle et procede de cristallisation utilisant celui ci
US20160254232A1 (en) Combined wafer production method with laser treatment and temperature-induced stresses
TR200201402T2 (tr) Metalik olmayan materyallerin ayrılması için yöntem ve cihaz.
ATE362653T1 (de) Methode zur trennung von substraten
TW200628885A (en) Repairing device and repairing method for display device
JP2006130691A (ja) 脆性材料の割断方法とその装置
DE602004020538D1 (de) Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.
ATE537558T1 (de) Bearbeiten von substraten, insbesondere von halbleitersubstraten
EP1742253A4 (de) Laserverarbeitungsverfahren und halbleiterchip
EP1422750A4 (de) Verfahren und vorrichtung zum splitten eines halbleiter-wafers
DE60222093D1 (de) Verfahren, modul, vorrichtung und server zur spracherkennung
DE59812840D1 (de) Verfahren und Vorrichtung zur thermischen Verbindung von Anschlussflächen zweier Substrate
DE60317761D1 (de) Elektrooptische Vorrichtung, Verfahren zur Ansteuerung einer elektrooptischen Vorrichtung und elektronisches Gerät
DE60330969D1 (de) Düsen und komponenten davon sowie herstellungsverfahren dafür
BRPI0404786B1 (pt) fluxo de soldagem e método para formar um sistema de fluxo
CN102057480A (zh) 切割半导体晶片
JP2009039755A (ja) 切断用加工方法
ATE526606T1 (de) Verfahren und vorrichtung zur polarisationsunempfindlichen phasenverschiebung eines optischen strahls in einer optischen einrichtung
ATE373872T1 (de) Behälter zum schneiden, und verfahren zum schneiden von bandlosen substraten
US20060255431A1 (en) Semiconductor wafer
ATE301696T1 (de) Verfahren zum kleben von substraten unter verwendung einer lichtaktivierbaren klebstofffolie
TW200512844A (en) Method of fabricating crystalline silicon and switching device using crystalline silicon