ATE512115T1 - Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür - Google Patents

Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür

Info

Publication number
ATE512115T1
ATE512115T1 AT04704473T AT04704473T ATE512115T1 AT E512115 T1 ATE512115 T1 AT E512115T1 AT 04704473 T AT04704473 T AT 04704473T AT 04704473 T AT04704473 T AT 04704473T AT E512115 T1 ATE512115 T1 AT E512115T1
Authority
AT
Austria
Prior art keywords
nanocrystals
core
shell
production processes
complex structures
Prior art date
Application number
AT04704473T
Other languages
English (en)
Inventor
Xiaogang Peng
Jianquing Li
David Battaglia
Yongqiang Wang
Yunjun Wang
Original Assignee
Univ Arkansas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Arkansas filed Critical Univ Arkansas
Application granted granted Critical
Publication of ATE512115T1 publication Critical patent/ATE512115T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/70—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing phosphorus
    • C09K11/701—Chalcogenides
    • C09K11/703—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/74—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing arsenic, antimony or bismuth
    • C09K11/7407—Chalcogenides
    • C09K11/7414—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/74—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing arsenic, antimony or bismuth
    • C09K11/7492—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/58—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving labelled substances
    • G01N33/588—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving labelled substances with semiconductor nanocrystal label, e.g. quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/169—Nanoparticles, e.g. doped nanoparticles acting as a gain material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • General Physics & Mathematics (AREA)
  • Biomedical Technology (AREA)
  • Urology & Nephrology (AREA)
  • Metallurgy (AREA)
  • General Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Hematology (AREA)
  • Immunology (AREA)
  • Microbiology (AREA)
  • Cell Biology (AREA)
  • Optics & Photonics (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Biotechnology (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Composite Materials (AREA)
  • Luminescent Compositions (AREA)
AT04704473T 2003-01-22 2004-01-22 Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür ATE512115T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44214603P 2003-01-22 2003-01-22
PCT/US2004/001895 WO2004066361A2 (en) 2003-01-22 2004-01-22 Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same

Publications (1)

Publication Number Publication Date
ATE512115T1 true ATE512115T1 (de) 2011-06-15

Family

ID=32772028

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04704473T ATE512115T1 (de) 2003-01-22 2004-01-22 Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür

Country Status (4)

Country Link
US (5) US7767260B2 (de)
EP (1) EP1590171B1 (de)
AT (1) ATE512115T1 (de)
WO (1) WO2004066361A2 (de)

Families Citing this family (172)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004066361A2 (en) 2003-01-22 2004-08-05 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
JP4789809B2 (ja) * 2004-01-15 2011-10-12 サムスン エレクトロニクス カンパニー リミテッド ナノ結晶をドーピングしたマトリックス
US7588828B2 (en) 2004-04-30 2009-09-15 Nanoco Technologies Limited Preparation of nanoparticle materials
GB0409877D0 (en) 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
WO2005107818A2 (en) * 2004-04-30 2005-11-17 University Of Florida Nanoparticles and their use for multifunctional bioimaging
US8003010B2 (en) * 2004-05-10 2011-08-23 Samsung Electronics Co., Ltd. Water-stable III-V semiconductor nanocrystal complexes and methods of making same
US7399429B2 (en) * 2004-05-10 2008-07-15 Evident Technologies, Inc. III-V semiconductor nanocrystal complexes and methods of making same
US20070045777A1 (en) * 2004-07-08 2007-03-01 Jennifer Gillies Micronized semiconductor nanocrystal complexes and methods of making and using same
EP2292718A3 (de) * 2004-11-11 2011-06-22 Samsung Electronics Co., Ltd Zusammengewachsene Nanokristalle und Verfahren zu ihrer Herstellung
US9637682B2 (en) 2004-11-11 2017-05-02 Samsung Electronics Co., Ltd. Interfused nanocrystals and method of preparing the same
US8134175B2 (en) 2005-01-11 2012-03-13 Massachusetts Institute Of Technology Nanocrystals including III-V semiconductors
US20080166706A1 (en) * 2005-03-30 2008-07-10 Jin Zhang Novel gold nanoparticle aggregates and their applications
US7632428B2 (en) * 2005-04-25 2009-12-15 The Board Of Trustees Of The University Of Arkansas Doped semiconductor nanocrystals and methods of making same
GB2470131B (en) * 2005-04-25 2011-02-16 Univ Arkansas Doped semiconductor nanocrystals and methods of making same
CN1306004C (zh) * 2005-04-28 2007-03-21 复旦大学 水溶性CdSe/CdS 核/壳型量子点的制备方法
US9297092B2 (en) * 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US8845927B2 (en) * 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
US7964278B2 (en) 2005-06-15 2011-06-21 Yissum Research Development Company Of The Hebrew University Of Jerusalem III-V semiconductor core-heteroshell nanocrystals
GB2429838B (en) * 2005-08-12 2011-03-09 Nanoco Technologies Ltd Nanoparticles
KR101159853B1 (ko) 2005-09-12 2012-06-25 삼성전기주식회사 다층구조 나노결정의 제조방법 및 그에 의해 수득된 나노결정
US8287951B2 (en) * 2005-09-29 2012-10-16 The Director General Defence Research & Development Organisation Single-source precursor for semiconductor nanocrystals
GB0522027D0 (en) 2005-10-28 2005-12-07 Nanoco Technologies Ltd Controlled preparation of nanoparticle materials
CN101313222A (zh) * 2005-11-22 2008-11-26 皇家飞利浦电子股份有限公司 发光粒子和使用发光粒子探测生物实体的方法
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2007143197A2 (en) * 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
CN100383216C (zh) * 2006-03-09 2008-04-23 复旦大学 一种ZnSe/ZnS核/壳型量子点的制备方法
GB0606845D0 (en) 2006-04-05 2006-05-17 Nanoco Technologies Ltd Labelled beads
US9212056B2 (en) * 2006-06-02 2015-12-15 Qd Vision, Inc. Nanoparticle including multi-functional ligand and method
RU2009104312A (ru) * 2006-07-10 2010-08-20 Конинклейке Филипс Электроникс Н.В. (Nl) Наночастицы типа "ядро-оболочка" для терапии и диагностических целей
US9406759B2 (en) * 2006-08-30 2016-08-02 University Of Florida Research Foundation, Inc. Methods for forming nanocrystals with position-controlled dopants
US20080271778A1 (en) * 2006-11-16 2008-11-06 Defries Anthony Use of electromagnetic excitation or light-matter interactions to generate or exchange thermal, kinetic, electronic or photonic energy
WO2008133660A2 (en) 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
US8197720B2 (en) * 2007-01-22 2012-06-12 Konica Minolta Medical & Graphic, Inc. Core/shell type semiconductor nanoparticle and method for production thereof
KR100841186B1 (ko) 2007-03-26 2008-06-24 삼성전자주식회사 다층 쉘 구조의 나노결정 및 그의 제조방법
KR100871961B1 (ko) * 2007-04-17 2008-12-08 삼성전자주식회사 포스파이트 화합물을 이용한 인화 금속 나노결정의제조방법 및 나노 결정 코아의 패시베이션 방법
US8563348B2 (en) * 2007-04-18 2013-10-22 Nanoco Technologies Ltd. Fabrication of electrically active films based on multiple layers
US20080264479A1 (en) 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
WO2008157493A2 (en) * 2007-06-15 2008-12-24 The Research Foundation Of State University Of New York Stor Intellectual Property Division Use of zno nanocrystals for imaging and therapy
GB0714865D0 (en) * 2007-07-31 2007-09-12 Nanoco Technologies Ltd Nanoparticles
ATE513890T1 (de) * 2007-09-28 2011-07-15 Nanoco Technologies Ltd Kern-hülle-nanopartikel und herstellungsverfahren dafür
US7687800B1 (en) * 2007-11-23 2010-03-30 University Of Central Florida Research Foundation, Inc. Excitation band-gap tuning of dopant based quantum dots with core-inner shell-outer shell
US8784701B2 (en) 2007-11-30 2014-07-22 Nanoco Technologies Ltd. Preparation of nanoparticle material
US8491815B1 (en) * 2008-02-07 2013-07-23 Jeffrey R. Dimaio Omnino nanocomposite crosslinked networks
CA2716552C (en) * 2008-02-25 2016-02-02 Nanoco Technologies Limited Semiconductor nanoparticle capping agents
KR101995370B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
WO2009151515A1 (en) 2008-05-06 2009-12-17 Qd Vision, Inc. Solid state lighting devices including quantum confined semiconductor nanoparticles
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
WO2009152265A1 (en) * 2008-06-10 2009-12-17 The Board Of Trustees Of The University Of Arkansas Indium arsenide nanocrystals and methods of making the same
WO2010003059A2 (en) 2008-07-02 2010-01-07 Life Technologies Corporation Stable indium-containing semiconductor nanocrystals
JP5633371B2 (ja) * 2008-07-07 2014-12-03 旭硝子株式会社 コア−シェル粒子の製造方法
US7888855B2 (en) * 2008-07-16 2011-02-15 Los Alamos National Security, Llc Mixed semiconductor nanocrystal compositions
GB0813273D0 (en) 2008-07-19 2008-08-27 Nanoco Technologies Ltd Method for producing aqueous compatible nanoparticles
GB0814458D0 (en) * 2008-08-07 2008-09-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
EP2337763A4 (de) * 2008-10-03 2013-09-04 Life Technologies Corp Verfahren zur herstellung von nanokristallen mithilfe eines schwachen elektronenübertragungswirkstoffs und fehlerhaften hüllenvorläufern
WO2010040032A2 (en) * 2008-10-03 2010-04-08 Life Technologies Corporation Methods for preparation of znte nanocrystals
WO2010048580A2 (en) * 2008-10-24 2010-04-29 Life Technologies Corporation Stable nanoparticles and methods of making and using such particles
GB0820101D0 (en) * 2008-11-04 2008-12-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
GB0821122D0 (en) 2008-11-19 2008-12-24 Nanoco Technologies Ltd Semiconductor nanoparticle - based light emitting devices and associated materials and methods
KR101480511B1 (ko) * 2008-12-19 2015-01-08 삼성전자 주식회사 금속-계면활성제층으로 코팅된 나노 결정의 제조 방법
WO2010083431A1 (en) * 2009-01-16 2010-07-22 University Of Utah Research Foundation Low-temperature synthesis of colloidal nanocrystals
US10290387B2 (en) 2009-01-20 2019-05-14 University Of Utah Research Foundation Modification of colloidal nanocrystals
EP2389692B1 (de) * 2009-01-20 2020-02-26 University of Utah Research Foundation Modifizierung von kolloidalen nanokristallen nach der synthese
GB0901857D0 (en) * 2009-02-05 2009-03-11 Nanoco Technologies Ltd Encapsulated nanoparticles
US8410455B2 (en) * 2009-04-17 2013-04-02 University Of Florida Research Foundation, Inc. Excitation-intensity-dependent, color-tunable, dual emitting nanocrystals
US10066164B2 (en) * 2009-06-30 2018-09-04 Tiecheng Qiao Semiconductor nanocrystals used with LED sources
KR101699540B1 (ko) 2009-07-08 2017-01-25 삼성전자주식회사 반도체 나노 결정 및 그 제조 방법
GB0916699D0 (en) * 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
GB0916700D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
US20110076839A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Making films composed of semiconductor nanocrystals
CN102870235B (zh) 2009-11-10 2016-11-23 免疫之光有限责任公司 用于从包括用于上变频的射频、微波能量和磁感应源的各种能量源产生发射光的上下变频系统
WO2011100023A1 (en) 2010-02-10 2011-08-18 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
US9580647B2 (en) 2010-03-01 2017-02-28 Najing Technology Corporation Limited Simultaneous optimization of absorption and emission of nanocrystals
CN102191038A (zh) * 2010-03-12 2011-09-21 复旦大学 一种在水相中低温制备CdTe量子点的方法
GB201005601D0 (en) 2010-04-01 2010-05-19 Nanoco Technologies Ltd Ecapsulated nanoparticles
US9382474B2 (en) * 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
KR101738551B1 (ko) * 2010-06-24 2017-05-23 삼성전자주식회사 반도체 나노 결정
US10174243B2 (en) * 2010-08-24 2019-01-08 Massachusetts Institute Of Technology Highly luminescent semiconductor nanocrystals
AU2011303409B2 (en) 2010-09-16 2016-03-17 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Anistropic semiconductor nanoparticles
WO2012099653A2 (en) 2010-12-08 2012-07-26 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
US9052289B2 (en) 2010-12-13 2015-06-09 Schlumberger Technology Corporation Hydrogen sulfide (H2S) detection using functionalized nanoparticles
EP3587100A1 (de) * 2010-12-28 2020-01-01 Life Technologies Corporation Nanokristalle mit hohen extinktionskoeffizienten und verfahren zur herstellung und verwendung solcher nanokristalle
US9543385B2 (en) * 2011-02-14 2017-01-10 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Heavily doped semiconductor nanoparticles
US9412905B2 (en) 2011-04-01 2016-08-09 Najing Technology Corporation Limited White light emitting device
WO2012158832A2 (en) 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
CN102241975B (zh) * 2011-05-20 2013-06-19 河南科技大学 一种具有核壳结构的量子点及其制备方法
DE202011103301U1 (de) * 2011-06-30 2011-10-20 Martin Buskühl Nanoteilchen für eine solartechnische Anlage sowie eine Solarzelle mit solchen Nanoteilchen
JP5745958B2 (ja) * 2011-07-07 2015-07-08 トヨタ自動車株式会社 光電変換素子
WO2013028253A1 (en) 2011-08-19 2013-02-28 Qd Vision, Inc. Semiconductor nanocrystals and methods
GB2494659A (en) * 2011-09-14 2013-03-20 Sharp Kk Nitride nanoparticles with high quantum yield and narrow luminescence spectrum.
US9696317B2 (en) * 2011-10-18 2017-07-04 The Trustees Of Princeton University Greener process to synthesize water-soluble Mn2+-doped CdSSe(ZnS) core(shell) nanocrystals for ratiometric temperature sensing, nanocrystals, and methods implementing nanocrystals
US9159872B2 (en) 2011-11-09 2015-10-13 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
WO2013078242A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods for coating semiconductor nanocrystals
WO2013078249A1 (en) 2011-11-22 2013-05-30 Qd Vision Inc. Method of making quantum dots
WO2013078247A1 (en) * 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
WO2013078245A1 (en) * 2011-11-22 2013-05-30 Qd Vision, Inc. Method of making quantum dots
WO2013115898A2 (en) 2012-02-05 2013-08-08 Qd Vision, Inc. Semiconductor nanocrystals, methods for making same, compositions, and products
WO2013123390A1 (en) * 2012-02-16 2013-08-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
US10807865B2 (en) * 2012-03-15 2020-10-20 Massachusetts Institute Of Technology Semiconductor nanocrystals
WO2013173409A1 (en) 2012-05-15 2013-11-21 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
US9425365B2 (en) 2012-08-20 2016-08-23 Pacific Light Technologies Corp. Lighting device having highly luminescent quantum dots
CN102879364A (zh) * 2012-09-19 2013-01-16 南京大学 量子点纳米荧光探针及其在肿瘤靶向检测中的应用
US20140117311A1 (en) 2012-10-29 2014-05-01 Juanita N. Kurtin Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer
WO2014093322A1 (en) * 2012-12-10 2014-06-19 Massachusetts Institute Of Technology Near-infrared light emitting device using semiconductor nanocrystals
US9617472B2 (en) 2013-03-15 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
FR3004459B1 (fr) * 2013-04-16 2015-12-25 Commissariat Energie Atomique Particule inorganique coeur/coquille luminescente, procede de preparation et utilisation
US9951272B2 (en) 2013-04-19 2018-04-24 Samsung Research America, Inc. Method of making semiconductor nanocrystals
KR102121322B1 (ko) * 2013-06-25 2020-06-10 엘지디스플레이 주식회사 퀀텀 로드 및 그 제조 방법
US20160060513A1 (en) * 2014-08-27 2016-03-03 University Of Central Florida Research Foundation, Inc. Light-selective particles, related methods and related applications
JP6492625B2 (ja) * 2014-12-22 2019-04-03 三菱マテリアル株式会社 赤外線遮蔽積層体及びこれを用いた赤外線遮蔽材
JP6697272B2 (ja) * 2015-01-19 2020-05-20 スタンレー電気株式会社 コアシェル構造を有する量子ドットとその製造方法
WO2016146719A1 (en) * 2015-03-19 2016-09-22 Universiteit Gent Size-tunable nanoparticle synthesis
CN104910918A (zh) * 2015-04-30 2015-09-16 中国科学院半导体研究所 一种核壳量子点材料及其制备方法
US10113112B2 (en) 2015-07-02 2018-10-30 Massachusetts Institute Of Technology Preparation of nanorods
CN104974742A (zh) * 2015-07-06 2015-10-14 天门市天宝化工科技有限公司 一种CdTeSeS/ZnTe核壳量子点的水相微波制备方法
US11142692B2 (en) * 2015-07-28 2021-10-12 The Regents Of The University Of California Capped co-doped core/shell nanocrystals for visible light emission
KR20180027629A (ko) * 2015-07-30 2018-03-14 퍼시픽 라이트 테크놀로지스 코포레이션 카드뮴 함량이 낮은 나노결정질 양자점 헤테로구조물
CN105153811B (zh) 2015-08-14 2019-12-10 广州华睿光电材料有限公司 一种用于印刷电子的油墨
CN108291103B (zh) 2015-11-12 2021-12-07 广州华睿光电材料有限公司 印刷组合物、包含其的电子器件及功能材料薄膜的制备方法
CN105315996A (zh) * 2015-11-25 2016-02-10 上海大学 ZnTe/ZnSe核壳型量子点及其制备方法
KR102519946B1 (ko) * 2015-12-31 2023-04-07 엘지디스플레이 주식회사 퀀텀 로드, 퀀텀 로드 필름 및 퀀텀 로드 표시장치
US10700236B2 (en) * 2016-03-17 2020-06-30 Apple Inc. Quantum dot spacing for high efficiency quantum dot LED displays
KR102608507B1 (ko) 2016-08-30 2023-12-01 삼성디스플레이 주식회사 표시장치 및 그 제조방법
CN109790407B (zh) 2016-11-23 2021-12-07 广州华睿光电材料有限公司 印刷油墨组合物及其制备方法和用途
CN106590624A (zh) * 2016-12-05 2017-04-26 河北工业大学 一种发光纳米颗粒及其制备方法
CN106590625A (zh) * 2016-12-05 2017-04-26 河北工业大学 一种基于发光纳米颗粒的发光材料及其制备方法
DE102016123972A1 (de) * 2016-12-09 2018-06-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
RU2645838C1 (ru) * 2016-12-27 2018-02-28 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) Способ коллоидного синтеза фотолюминесцентных наночастиц сверхмалого размера структуры ядро/оболочка
CN108269886B (zh) * 2016-12-30 2019-12-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
CN108269930B (zh) 2016-12-30 2020-05-26 Tcl科技集团股份有限公司 一种合金纳米材料、制备方法及半导体器件
CN108264905A (zh) 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
CN108264900A (zh) 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点复合材料、制备方法及半导体器件
WO2018198137A1 (en) 2017-04-28 2018-11-01 Indian Institute Of Science Semiconductor nanocrystals
US11319487B2 (en) 2017-05-11 2022-05-03 Samsung Electronics Co., Ltd. Semiconductor nanocrystal particles and devices including the same
CN107230745B (zh) * 2017-05-17 2019-08-27 纳晶科技股份有限公司 量子点、墨水及量子点发光显示器件
EP3660127A4 (de) 2017-07-27 2021-03-31 NS Materials Inc. Quantenpunkt, wellenlängenumwandlungselement mit quantenpunkt, beleuchtungselement, rückbeleuchtungsvorrichtung, anzeigevorrichtung und verfahren zur herstellung von quantenpunkten
KR20240166587A (ko) * 2017-08-24 2024-11-26 아리엘 싸이언티픽 이노베이션스 엘티디. 전기 촉매, 이의 제조방법, 및 연료 전지를 위한 이의 사용
JP6690886B2 (ja) * 2017-10-12 2020-04-28 Ｎｓマテリアルズ株式会社 量子ドットの製造方法
CN107747107B (zh) * 2017-10-13 2019-05-24 首都师范大学 磷化铟包覆硫化铟的核壳结构半导体纳米片材料及其制备方法
KR102399447B1 (ko) * 2017-10-16 2022-05-17 엘지디스플레이 주식회사 양자점과 이를 포함하는 양자점 발광다이오드 및 양자점 발광 표시장치
KR102395049B1 (ko) 2017-10-25 2022-05-04 삼성전자주식회사 반도체 나노결정 입자 및 그의 제조 방법과 이를 포함하는 소자
KR102390712B1 (ko) 2017-12-29 2022-04-25 티씨엘 테크놀로지 그룹 코포레이션 양자점 및 그의 제조방법과 응용
US10619096B2 (en) * 2018-01-11 2020-04-14 Samsung Electronics Co., Ltd. Population of quantum dots and a composition including the same
EP3530713B1 (de) 2018-02-21 2025-04-02 Samsung Electronics Co., Ltd. Halbleiternanokristallpartikel, herstellungsverfahren dafür und vorrichtungen damit
CN108359466A (zh) * 2018-03-07 2018-08-03 何洋 一种红光/绿光量子点以及白光led的制备方法
CN109439328B (zh) * 2018-10-18 2020-10-23 纳晶科技股份有限公司 核壳量子点制备方法、核壳量子点及量子点电致器件
CN109370564B (zh) * 2018-10-26 2026-03-13 纳晶科技股份有限公司 一种蓝光量子点及其制备方法、电子器件
WO2020095141A1 (ja) * 2018-11-09 2020-05-14 株式会社半導体エネルギー研究所 発光デバイス、発光機器、表示装置、電子機器及び照明装置
EP3656833B1 (de) * 2018-11-23 2025-03-19 Samsung Display Co., Ltd. Quantenpunkte, zusammensetzungen oder verbundstoffe damit und elektronische vorrichtung damit
EP3911715A1 (de) 2019-01-17 2021-11-24 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd Kolloidale halbleiternanostrukturen
WO2020147125A1 (zh) * 2019-01-18 2020-07-23 京东方科技集团股份有限公司 量子点结构及其制作方法、光学薄膜及其制作方法和显示装置
US11515445B2 (en) * 2019-02-26 2022-11-29 Opulence Optronics Co., Ltd Core-shell type quantum dots and method of forming the same
KR102673641B1 (ko) * 2019-04-19 2024-06-07 삼성전자주식회사 반도체 나노결정 입자 및 이를 포함하는 소자
CN110137363B (zh) * 2019-05-14 2021-09-03 京东方科技集团股份有限公司 一种量子点及其制作方法、qled和显示面板
CN110423616B (zh) * 2019-06-21 2023-02-10 纳晶科技股份有限公司 核壳量子点制备方法、量子点光电器件
US20230090605A1 (en) * 2020-02-06 2023-03-23 Sharp Kabushiki Kaisha Method for producing light-emitting device, and light-emitting device
WO2021157020A1 (ja) * 2020-02-06 2021-08-12 シャープ株式会社 発光デバイスの製造方法
CN111450850B (zh) * 2020-03-27 2023-03-28 肇庆市华师大光电产业研究院 一种四元铋基硫族壳-核纳米球及其制备方法和应用
CN111518541A (zh) * 2020-05-25 2020-08-11 马鞍山微晶光电材料有限公司 长发光波长水相量子点制备方法
CN113948647A (zh) * 2020-07-17 2022-01-18 Tcl科技集团股份有限公司 一种纳米材料及其制备方法与量子点发光二极管
KR102480363B1 (ko) * 2020-08-11 2022-12-23 연세대학교 산학협력단 압전성과 발광성이 동기화된 소재 및 이를 포함하는 소자
CN112592713B (zh) * 2020-12-22 2023-10-13 深圳扑浪创新科技有限公司 一种量子点材料及其制备方法和应用
CN113224185A (zh) * 2021-05-07 2021-08-06 张棕奕 —种核壳纳米锥阵列太阳能电池
CN115725297B (zh) * 2022-12-10 2023-09-08 福州大学 一种纳米板异质结构的CdS-CdTe-CdS量子阱材料及其制备方法
WO2025252415A1 (en) * 2024-06-03 2025-12-11 Ams-Osram International Gmbh Nanoparticle, method for producing a nanoparticle, and light-emitting device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2569427B1 (fr) * 1984-08-23 1986-11-14 Commissariat Energie Atomique Procede et dispositif de depot sur un substrat d'une couche mince d'un compose comportant au moins un constituant cationique et au moins un constituant anionique
US5300793A (en) * 1987-12-11 1994-04-05 Hitachi, Ltd. Hetero crystalline structure and semiconductor device using it
US5319219A (en) * 1992-05-22 1994-06-07 Minnesota Mining And Manufacturing Company Single quantum well II-VI laser diode without cladding
US6322901B1 (en) * 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6207392B1 (en) * 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6251303B1 (en) 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
US6306610B1 (en) * 1998-09-18 2001-10-23 Massachusetts Institute Of Technology Biological applications of quantum dots
JP4951184B2 (ja) 2000-03-20 2012-06-13 マサチューセッツ インスティテュート オブ テクノロジー 無機粒子結合体
IL138471A0 (en) * 2000-09-14 2001-10-31 Yissum Res Dev Co Novel semiconductor materials and their uses
EP2218762A3 (de) * 2001-07-20 2010-09-29 Life Technologies Corporation Lumineszente Nanopartikel und Verfahren zu ihrer Herstellung
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
CA2495309C (en) * 2002-08-13 2011-11-08 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
US7160613B2 (en) 2002-08-15 2007-01-09 Massachusetts Institute Of Technology Stabilized semiconductor nanocrystals
WO2004066361A2 (en) 2003-01-22 2004-08-05 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same

Also Published As

Publication number Publication date
US8900481B2 (en) 2014-12-02
WO2004066361A2 (en) 2004-08-05
US9850426B2 (en) 2017-12-26
US20100171077A1 (en) 2010-07-08
EP1590171A2 (de) 2005-11-02
EP1590171B1 (de) 2011-06-08
US9340726B2 (en) 2016-05-17
US20050129947A1 (en) 2005-06-16
US7767260B2 (en) 2010-08-03
US7919012B2 (en) 2011-04-05
US20150108405A1 (en) 2015-04-23
WO2004066361A3 (en) 2004-11-18
US20100163800A1 (en) 2010-07-01
EP1590171A4 (de) 2007-02-21
US20100308272A1 (en) 2010-12-09

Similar Documents

Publication Publication Date Title
WO2004066361A3 (en) Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
DE60235306D1 (de) Verfahren zur herstellung von kolloidale nanokrist
DE60334909D1 (de) Poröse perlen und herstellungsverfahren dafür
PT1180062E (pt) Metodo para a producao de micro e nanoparticulas morfologicamente uniformes utilizando micromisturadores
WO2008063658A3 (en) Semiconductor nanocrystals and compositions and devices including same
CY1119106T1 (el) Αντισωματα εναντι masp-2
EA200400368A1 (ru) Новые дигидроптеридиноны, способы их получения и их применение в качестве лекарственных средств
PT1530465E (pt) Processo para produção de uma preparação lipossomal catiónica que compreende um composto lipofílico
BRPI0409114A (pt) métodos para obter 68ga e para produzir um complexo de 68ga-radiomarcado, kit para a preparação de 68ga a partir de um gerador de 68ge/68ga, e, uso do mesmo
WO2005110916A3 (en) Iii-v semiconductor nanocrystal complexes and methods of making same
CA2557148A1 (en) Orthoester compositions and methods for reducing the viscosity of viscosified treatment fluids
ATE556845T1 (de) Lumineszierende nanopartikel und ihre herstellung
ZA200711088B (en) Stabilized liquid yeast preparation and method for producing the same, and the use thereof
DE50214662D1 (de) Strahlungsemittierender halbleiterchip, verfahren zu dessen herstellung und strahlungsemittierendes bauelement
BRPI0411548A (pt) stent polimérico e método de fabricação
CA2429412A1 (en) Production of fine-grained particles
EP1291489A3 (de) Verfahren zur Erhöhung der permeabilität unterirdischen Formationen
DE602004030346D1 (de) Gelatinkapseln
EP1600207A4 (de) Emulgator, verfahren zur herstellung desselben und den emulgator verwendende emulgierte zusammensetzung
PE20090962A1 (es) Nuevas composiciones a base de taxoides
WO2005102255A3 (de) Schweissabsorbierendes kosmetisches produkt und verfahren zu seiner herstellung
WO2004032975A3 (en) Biphenyls and fluorenes as imaging agents in alzheimer's disease
MY149864A (en) Flavouring-containing pharmaceutical formulations with improved pharmaceutical properties
WO2004092727A3 (en) Compound libraries and methods for drug discovery
NO20024664D0 (no) Blanding basert på sulfid av sjeldent jordmetall med forbedret kjemisk stabilitet, fremgangsmåte for fremstilling deravog anvendelse derav som pigment

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties