ATE512115T1 - Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür - Google Patents

Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür

Info

Publication number
ATE512115T1
ATE512115T1 AT04704473T AT04704473T ATE512115T1 AT E512115 T1 ATE512115 T1 AT E512115T1 AT 04704473 T AT04704473 T AT 04704473T AT 04704473 T AT04704473 T AT 04704473T AT E512115 T1 ATE512115 T1 AT E512115T1
Authority
AT
Austria
Prior art keywords
nanocrystals
core
shell
production processes
complex structures
Prior art date
Application number
AT04704473T
Other languages
English (en)
Inventor
Xiaogang Peng
Jianquing Li
David Battaglia
Yongqiang Wang
Yunjun Wang
Original Assignee
Univ Arkansas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Arkansas filed Critical Univ Arkansas
Application granted granted Critical
Publication of ATE512115T1 publication Critical patent/ATE512115T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562Chalcogenides
    • C09K11/565Chalcogenides with zinc cadmium
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/70Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing phosphorus
    • C09K11/701Chalcogenides
    • C09K11/703Chalcogenides with zinc or cadmium
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/74Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing arsenic, antimony or bismuth
    • C09K11/7407Chalcogenides
    • C09K11/7414Chalcogenides with zinc or cadmium
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/74Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing arsenic, antimony or bismuth
    • C09K11/7492Arsenides; Nitrides; Phosphides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881Chalcogenides
    • C09K11/883Chalcogenides with zinc or cadmium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605Products containing multiple oriented crystallites, e.g. columnar crystallites
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/58Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving labelled substances
    • G01N33/588Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving labelled substances with semiconductor nanocrystal label, e.g. quantum dots
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/169Nanoparticles, e.g. doped nanoparticles acting as a gain material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/817Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/823Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991Coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Biomedical Technology (AREA)
  • General Health & Medical Sciences (AREA)
  • Hematology (AREA)
  • Immunology (AREA)
  • Urology & Nephrology (AREA)
  • Biotechnology (AREA)
  • Microbiology (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Cell Biology (AREA)
  • Pathology (AREA)
  • Composite Materials (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Luminescent Compositions (AREA)
AT04704473T 2003-01-22 2004-01-22 Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür ATE512115T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44214603P 2003-01-22 2003-01-22
PCT/US2004/001895 WO2004066361A2 (en) 2003-01-22 2004-01-22 Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same

Publications (1)

Publication Number Publication Date
ATE512115T1 true ATE512115T1 (de) 2011-06-15

Family

ID=32772028

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04704473T ATE512115T1 (de) 2003-01-22 2004-01-22 Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür

Country Status (4)

Country Link
US (5) US7767260B2 (de)
EP (1) EP1590171B1 (de)
AT (1) ATE512115T1 (de)
WO (1) WO2004066361A2 (de)

Families Citing this family (171)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004066361A2 (en) 2003-01-22 2004-08-05 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
EP1733077B1 (de) * 2004-01-15 2018-04-18 Samsung Electronics Co., Ltd. Nanokristalldotierte matrizes
US7588828B2 (en) 2004-04-30 2009-09-15 Nanoco Technologies Limited Preparation of nanoparticle materials
GB0409877D0 (en) * 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
US8128908B2 (en) 2004-04-30 2012-03-06 University Of Florida Research Foundation, Inc. Nanoparticles and their use for multifunctional bioimaging
CA2566493A1 (en) * 2004-05-10 2005-11-24 Evident Technologies Iii-v semiconductor nanocrystal complexes and methods of making same
US8003010B2 (en) * 2004-05-10 2011-08-23 Samsung Electronics Co., Ltd. Water-stable III-V semiconductor nanocrystal complexes and methods of making same
US20070045777A1 (en) * 2004-07-08 2007-03-01 Jennifer Gillies Micronized semiconductor nanocrystal complexes and methods of making and using same
EP1666562B1 (de) * 2004-11-11 2018-03-07 Samsung Electronics Co., Ltd. Zusammengewachsene Nanokristalle und Verfahren zu ihrer Herstellung
US9637682B2 (en) 2004-11-11 2017-05-02 Samsung Electronics Co., Ltd. Interfused nanocrystals and method of preparing the same
US8134175B2 (en) 2005-01-11 2012-03-13 Massachusetts Institute Of Technology Nanocrystals including III-V semiconductors
US20080166706A1 (en) * 2005-03-30 2008-07-10 Jin Zhang Novel gold nanoparticle aggregates and their applications
US7632428B2 (en) * 2005-04-25 2009-12-15 The Board Of Trustees Of The University Of Arkansas Doped semiconductor nanocrystals and methods of making same
GB2470131B (en) * 2005-04-25 2011-02-16 Univ Arkansas Doped semiconductor nanocrystals and methods of making same
CN1306004C (zh) * 2005-04-28 2007-03-21 复旦大学 水溶性CdSe/CdS 核/壳型量子点的制备方法
US8845927B2 (en) * 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
US9297092B2 (en) * 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
JP5137825B2 (ja) 2005-06-15 2013-02-06 イッサム リサーチ デベロップメント カンパニー オブ ザ ヘブライ ユニバーシティ オブ エルサレム Iii−v族半導体コア−ヘテロシェルナノクリスタル
GB2472542B (en) * 2005-08-12 2011-03-23 Nanoco Technologies Ltd Nanoparticles
KR101159853B1 (ko) 2005-09-12 2012-06-25 삼성전기주식회사 다층구조 나노결정의 제조방법 및 그에 의해 수득된 나노결정
CN101341228B (zh) * 2005-09-29 2013-03-13 国防研究与发展组织总干事 半导体纳米晶的单源前体
GB0522027D0 (en) 2005-10-28 2005-12-07 Nanoco Technologies Ltd Controlled preparation of nanoparticle materials
WO2007060591A2 (en) * 2005-11-22 2007-05-31 Koninklijke Philips Electronics N. V. Luminescent particle and method of detecting a biological entity using a luminescent particle
WO2007143197A2 (en) * 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
CN100383216C (zh) * 2006-03-09 2008-04-23 复旦大学 一种ZnSe/ZnS核/壳型量子点的制备方法
GB0606845D0 (en) 2006-04-05 2006-05-17 Nanoco Technologies Ltd Labelled beads
US9212056B2 (en) * 2006-06-02 2015-12-15 Qd Vision, Inc. Nanoparticle including multi-functional ligand and method
JP2009544584A (ja) * 2006-07-10 2009-12-17 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 治療及び画像化を目的とするコア・シェル構造ナノ粒子
US9406759B2 (en) * 2006-08-30 2016-08-02 University Of Florida Research Foundation, Inc. Methods for forming nanocrystals with position-controlled dopants
US20080271778A1 (en) * 2006-11-16 2008-11-06 Defries Anthony Use of electromagnetic excitation or light-matter interactions to generate or exchange thermal, kinetic, electronic or photonic energy
WO2008063658A2 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008133660A2 (en) * 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
WO2008063652A1 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
US8197720B2 (en) * 2007-01-22 2012-06-12 Konica Minolta Medical & Graphic, Inc. Core/shell type semiconductor nanoparticle and method for production thereof
KR100841186B1 (ko) 2007-03-26 2008-06-24 삼성전자주식회사 다층 쉘 구조의 나노결정 및 그의 제조방법
KR100871961B1 (ko) * 2007-04-17 2008-12-08 삼성전자주식회사 포스파이트 화합물을 이용한 인화 금속 나노결정의제조방법 및 나노 결정 코아의 패시베이션 방법
US8563348B2 (en) 2007-04-18 2013-10-22 Nanoco Technologies Ltd. Fabrication of electrically active films based on multiple layers
US20080264479A1 (en) 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
US20090114859A1 (en) * 2007-06-15 2009-05-07 Paras Prasad Use of ZnO Nanocrystals For Imaging and Therapy
GB0714865D0 (en) * 2007-07-31 2007-09-12 Nanoco Technologies Ltd Nanoparticles
US9232618B2 (en) * 2007-08-06 2016-01-05 Immunolight, Llc Up and down conversion systems for production of emitted light from various energy sources including radio frequency, microwave energy and magnetic induction sources for upconversion
AU2008303396B2 (en) * 2007-09-28 2013-09-26 Nanoco Technologies Limited Core shell nanoparticles and preparation method thereof
US7687800B1 (en) 2007-11-23 2010-03-30 University Of Central Florida Research Foundation, Inc. Excitation band-gap tuning of dopant based quantum dots with core-inner shell-outer shell
US8784701B2 (en) * 2007-11-30 2014-07-22 Nanoco Technologies Ltd. Preparation of nanoparticle material
US8491815B1 (en) * 2008-02-07 2013-07-23 Jeffrey R. Dimaio Omnino nanocomposite crosslinked networks
AU2009219983A1 (en) * 2008-02-25 2009-09-03 Nanoco Technologies Limited Semiconductor nanoparticle capping agents
KR20110008206A (ko) 2008-04-03 2011-01-26 큐디 비젼, 인크. 양자점들을 포함하는 발광 소자
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
EP2297762B1 (de) 2008-05-06 2017-03-15 Samsung Electronics Co., Ltd. Halbleiter-beleuchtungsanordnungen mit quanteneingeschlossenen halbleiternanopartikeln
US20110291049A1 (en) * 2008-06-10 2011-12-01 Board Of Trustees Of The University Of Arkansas Indium arsenide nanocrystals and methods of making the same
EP2307309B1 (de) 2008-07-02 2015-11-11 Life Technologies Corporation VERFAHREN ZUR HERSTELLUNG VON STABILE InP/ZnS KERN/SCHICHT ARTIGE HALBLEITERNANOKRISTALLE UND DADURCH HERGESTELLTE PRODUKTEN
EP2305607A4 (de) * 2008-07-07 2011-09-07 Asahi Glass Co Ltd Kern-hülle-partikel und verfahren zur herstellung der kern-hülle-partikel
US7888855B2 (en) * 2008-07-16 2011-02-15 Los Alamos National Security, Llc Mixed semiconductor nanocrystal compositions
GB0813273D0 (en) * 2008-07-19 2008-08-27 Nanoco Technologies Ltd Method for producing aqueous compatible nanoparticles
GB0814458D0 (en) * 2008-08-07 2008-09-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
WO2010040109A2 (en) * 2008-10-03 2010-04-08 Life Technologies Corporation Methods for preparation of nanocrystals using a weak electron transfer agent and mismatched shell precursors
WO2010040032A2 (en) * 2008-10-03 2010-04-08 Life Technologies Corporation Methods for preparation of znte nanocrystals
AU2009308162B2 (en) * 2008-10-24 2015-07-09 Life Technologies Corporation Stable nanoparticles and methods of making and using such particles
GB0820101D0 (en) 2008-11-04 2008-12-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
GB0821122D0 (en) 2008-11-19 2008-12-24 Nanoco Technologies Ltd Semiconductor nanoparticle - based light emitting devices and associated materials and methods
KR101480511B1 (ko) * 2008-12-19 2015-01-08 삼성전자 주식회사 금속-계면활성제층으로 코팅된 나노 결정의 제조 방법
JP5698679B2 (ja) * 2009-01-16 2015-04-08 ユニバーシティ・オブ・ユタ・リサーチ・ファウンデイション コロイドナノ結晶の低温合成
US10290387B2 (en) 2009-01-20 2019-05-14 University Of Utah Research Foundation Modification of colloidal nanocrystals
WO2010085463A1 (en) * 2009-01-20 2010-07-29 University Of Utah Research Foundation Post-synthesis modification of colloidal nanocrystals
GB0901857D0 (en) * 2009-02-05 2009-03-11 Nanoco Technologies Ltd Encapsulated nanoparticles
US8410455B2 (en) * 2009-04-17 2013-04-02 University Of Florida Research Foundation, Inc. Excitation-intensity-dependent, color-tunable, dual emitting nanocrystals
WO2011002509A1 (en) * 2009-06-30 2011-01-06 Tiecheng Alex Qiao Semiconductor nanocrystals used with led sources
KR101699540B1 (ko) 2009-07-08 2017-01-25 삼성전자주식회사 반도체 나노 결정 및 그 제조 방법
GB0916700D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
GB0916699D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
US20110076839A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Making films composed of semiconductor nanocrystals
WO2011100023A1 (en) * 2010-02-10 2011-08-18 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
US9580647B2 (en) 2010-03-01 2017-02-28 Najing Technology Corporation Limited Simultaneous optimization of absorption and emission of nanocrystals
CN102191038A (zh) * 2010-03-12 2011-09-21 复旦大学 一种在水相中低温制备CdTe量子点的方法
GB201005601D0 (en) 2010-04-01 2010-05-19 Nanoco Technologies Ltd Ecapsulated nanoparticles
US9382474B2 (en) * 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
KR101738551B1 (ko) * 2010-06-24 2017-05-23 삼성전자주식회사 반도체 나노 결정
US10174243B2 (en) * 2010-08-24 2019-01-08 Massachusetts Institute Of Technology Highly luminescent semiconductor nanocrystals
CN103154183B (zh) 2010-09-16 2015-12-09 耶路撒冷希伯来大学伊森姆研究发展公司 各向异性半导体纳米粒子
WO2012099653A2 (en) 2010-12-08 2012-07-26 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
US9052289B2 (en) 2010-12-13 2015-06-09 Schlumberger Technology Corporation Hydrogen sulfide (H2S) detection using functionalized nanoparticles
WO2012092195A1 (en) * 2010-12-28 2012-07-05 Life Technologies Corporation Nanocrystals with high extinction coefficients and methods of making and using such nanocrystals
WO2012111009A2 (en) * 2011-02-14 2012-08-23 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Heavily doped semiconductor nanoparticles
CN103597568B (zh) 2011-04-01 2016-08-17 纳晶科技股份有限公司 白光发光器件
WO2012158832A2 (en) 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
CN102241975B (zh) * 2011-05-20 2013-06-19 河南科技大学 一种具有核壳结构的量子点及其制备方法
DE202011103301U1 (de) * 2011-06-30 2011-10-20 Martin Buskühl Nanoteilchen für eine solartechnische Anlage sowie eine Solarzelle mit solchen Nanoteilchen
JP5745958B2 (ja) * 2011-07-07 2015-07-08 トヨタ自動車株式会社 光電変換素子
WO2013028253A1 (en) 2011-08-19 2013-02-28 Qd Vision, Inc. Semiconductor nanocrystals and methods
GB2494659A (en) * 2011-09-14 2013-03-20 Sharp Kk Nitride nanoparticles with high quantum yield and narrow luminescence spectrum.
US9696317B2 (en) * 2011-10-18 2017-07-04 The Trustees Of Princeton University Greener process to synthesize water-soluble Mn2+-doped CdSSe(ZnS) core(shell) nanocrystals for ratiometric temperature sensing, nanocrystals, and methods implementing nanocrystals
US20130112941A1 (en) * 2011-11-09 2013-05-09 Juanita Kurtin Semiconductor structure having nanocrystalline core and nanocrystalline shell with insulator coating
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
WO2013078249A1 (en) 2011-11-22 2013-05-30 Qd Vision Inc. Method of making quantum dots
WO2013078247A1 (en) * 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
WO2013078245A1 (en) * 2011-11-22 2013-05-30 Qd Vision, Inc. Method of making quantum dots
WO2013115898A2 (en) 2012-02-05 2013-08-08 Qd Vision, Inc. Semiconductor nanocrystals, methods for making same, compositions, and products
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
WO2013078242A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods for coating semiconductor nanocrystals
WO2013123390A1 (en) * 2012-02-16 2013-08-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
US10807865B2 (en) * 2012-03-15 2020-10-20 Massachusetts Institute Of Technology Semiconductor nanocrystals
WO2013173409A1 (en) 2012-05-15 2013-11-21 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
US9425365B2 (en) 2012-08-20 2016-08-23 Pacific Light Technologies Corp. Lighting device having highly luminescent quantum dots
CN102879364A (zh) * 2012-09-19 2013-01-16 南京大学 量子点纳米荧光探针及其在肿瘤靶向检测中的应用
US20140117311A1 (en) 2012-10-29 2014-05-01 Juanita N. Kurtin Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer
US9935240B2 (en) 2012-12-10 2018-04-03 Massachusetts Institute Of Technology Near-infrared light emitting device using semiconductor nanocrystals
US9617472B2 (en) 2013-03-15 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
FR3004459B1 (fr) * 2013-04-16 2015-12-25 Commissariat Energie Atomique Particule inorganique coeur/coquille luminescente, procede de preparation et utilisation
US9951272B2 (en) 2013-04-19 2018-04-24 Samsung Research America, Inc. Method of making semiconductor nanocrystals
KR102121322B1 (ko) * 2013-06-25 2020-06-10 엘지디스플레이 주식회사 퀀텀 로드 및 그 제조 방법
US20160060513A1 (en) * 2014-08-27 2016-03-03 University Of Central Florida Research Foundation, Inc. Light-selective particles, related methods and related applications
JP6492625B2 (ja) * 2014-12-22 2019-04-03 三菱マテリアル株式会社 赤外線遮蔽積層体及びこれを用いた赤外線遮蔽材
JP6697272B2 (ja) * 2015-01-19 2020-05-20 スタンレー電気株式会社 コアシェル構造を有する量子ドットとその製造方法
CA2980089C (en) * 2015-03-19 2024-04-09 Universiteit Gent Size-tunable nanoparticle synthesis
CN104910918A (zh) * 2015-04-30 2015-09-16 中国科学院半导体研究所 一种核壳量子点材料及其制备方法
US10113112B2 (en) 2015-07-02 2018-10-30 Massachusetts Institute Of Technology Preparation of nanorods
CN104974742A (zh) * 2015-07-06 2015-10-14 天门市天宝化工科技有限公司 一种CdTeSeS/ZnTe核壳量子点的水相微波制备方法
US11142692B2 (en) * 2015-07-28 2021-10-12 The Regents Of The University Of California Capped co-doped core/shell nanocrystals for visible light emission
US10221356B2 (en) * 2015-07-30 2019-03-05 Osram Opto Semiconductors Gmbh Low-cadmium nanocrystalline quantum dot heterostructure
CN105153811B (zh) 2015-08-14 2019-12-10 广州华睿光电材料有限公司 一种用于印刷电子的油墨
WO2017080326A1 (zh) 2015-11-12 2017-05-18 广州华睿光电材料有限公司 印刷组合物、包含其的电子器件及功能材料薄膜的制备方法
CN105315996A (zh) * 2015-11-25 2016-02-10 上海大学 ZnTe/ZnSe核壳型量子点及其制备方法
KR102519946B1 (ko) * 2015-12-31 2023-04-07 엘지디스플레이 주식회사 퀀텀 로드, 퀀텀 로드 필름 및 퀀텀 로드 표시장치
US10700236B2 (en) * 2016-03-17 2020-06-30 Apple Inc. Quantum dot spacing for high efficiency quantum dot LED displays
KR102608507B1 (ko) 2016-08-30 2023-12-01 삼성디스플레이 주식회사 표시장치 및 그 제조방법
WO2018095381A1 (zh) 2016-11-23 2018-05-31 广州华睿光电材料有限公司 印刷油墨组合物及其制备方法和用途
CN106590624A (zh) * 2016-12-05 2017-04-26 河北工业大学 一种发光纳米颗粒及其制备方法
CN106590625A (zh) * 2016-12-05 2017-04-26 河北工业大学 一种基于发光纳米颗粒的发光材料及其制备方法
DE102016123972A1 (de) * 2016-12-09 2018-06-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
RU2645838C1 (ru) * 2016-12-27 2018-02-28 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) Способ коллоидного синтеза фотолюминесцентных наночастиц сверхмалого размера структуры ядро/оболочка
CN108264905A (zh) 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
CN108264900A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点复合材料、制备方法及半导体器件
CN108269930B (zh) 2016-12-30 2020-05-26 Tcl科技集团股份有限公司 一种合金纳米材料、制备方法及半导体器件
CN108269886B (zh) * 2016-12-30 2019-12-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
WO2018198137A1 (en) 2017-04-28 2018-11-01 Indian Institute Of Science Semiconductor nanocrystals
KR102618410B1 (ko) 2017-05-11 2023-12-27 삼성전자주식회사 반도체 나노결정 입자 및 이를 포함하는 소자
CN107230745B (zh) * 2017-05-17 2019-08-27 纳晶科技股份有限公司 量子点、墨水及量子点发光显示器件
KR102640682B1 (ko) * 2017-07-27 2024-02-27 엔에스 마테리얼스 아이엔씨. 양자점 및, 양자점을 이용한 파장 변환 부재, 조명 부재, 백라이트 장치, 표시 장치, 및, 양자점의 제조 방법
AU2018348597A1 (en) * 2017-10-12 2020-04-23 Ns Materials Inc. Quantum dot, method for manufacturing same, wavelength conversion member using quantum dot, illumination member, backlight device, and display device
CN107747107B (zh) * 2017-10-13 2019-05-24 首都师范大学 磷化铟包覆硫化铟的核壳结构半导体纳米片材料及其制备方法
KR102399447B1 (ko) * 2017-10-16 2022-05-17 엘지디스플레이 주식회사 양자점과 이를 포함하는 양자점 발광다이오드 및 양자점 발광 표시장치
KR102395049B1 (ko) 2017-10-25 2022-05-04 삼성전자주식회사 반도체 나노결정 입자 및 그의 제조 방법과 이를 포함하는 소자
EP3733812B1 (de) * 2017-12-29 2024-02-28 TCL Technology Group Corporation Quantenpunkt, herstellungsverfahren dafür und verwendung davon
KR102713384B1 (ko) * 2018-01-11 2024-10-08 삼성전자주식회사 양자점 집단과 이를 포함하는 조성물
EP3530713B1 (de) * 2018-02-21 2025-04-02 Samsung Electronics Co., Ltd. Halbleiternanokristallpartikel, herstellungsverfahren dafür und vorrichtungen damit
CN108359466A (zh) * 2018-03-07 2018-08-03 何洋 一种红光/绿光量子点以及白光led的制备方法
CN109439328B (zh) * 2018-10-18 2020-10-23 纳晶科技股份有限公司 核壳量子点制备方法、核壳量子点及量子点电致器件
CN109370564B (zh) * 2018-10-26 2026-03-13 纳晶科技股份有限公司 一种蓝光量子点及其制备方法、电子器件
WO2020095141A1 (ja) * 2018-11-09 2020-05-14 株式会社半導体エネルギー研究所 発光デバイス、発光機器、表示装置、電子機器及び照明装置
US11149199B2 (en) 2018-11-23 2021-10-19 Samsung Display Co., Ltd. Quantum dots, compositions and composites including the same, and electronic device including the same
KR20210137446A (ko) 2019-01-17 2021-11-17 이슘 리서치 디벨롭먼트 컴퍼니 오브 더 히브루 유니버시티 오브 예루살렘 엘티디. 콜로이드 반도체 나노구조
US20210222064A1 (en) * 2019-01-18 2021-07-22 Beijing Boe Technology Development Co., Ltd. Quantum dot structure and manufacturing method thereof, optical film and manufacturing method thereof, display device
US11515445B2 (en) * 2019-02-26 2022-11-29 Opulence Optronics Co., Ltd Core-shell type quantum dots and method of forming the same
KR102673641B1 (ko) * 2019-04-19 2024-06-07 삼성전자주식회사 반도체 나노결정 입자 및 이를 포함하는 소자
CN110137363B (zh) * 2019-05-14 2021-09-03 京东方科技集团股份有限公司 一种量子点及其制作方法、qled和显示面板
CN110423616B (zh) * 2019-06-21 2023-02-10 纳晶科技股份有限公司 核壳量子点制备方法、量子点光电器件
WO2021157021A1 (ja) * 2020-02-06 2021-08-12 シャープ株式会社 発光デバイスの製造方法、及び発光デバイス
US12526884B2 (en) * 2020-02-06 2026-01-13 Sharp Kabushiki Kaisha Method for manufacturing light-emitting device
CN111450850B (zh) * 2020-03-27 2023-03-28 肇庆市华师大光电产业研究院 一种四元铋基硫族壳-核纳米球及其制备方法和应用
CN111518541A (zh) * 2020-05-25 2020-08-11 马鞍山微晶光电材料有限公司 长发光波长水相量子点制备方法
CN113948647A (zh) * 2020-07-17 2022-01-18 Tcl科技集团股份有限公司 一种纳米材料及其制备方法与量子点发光二极管
KR102480363B1 (ko) * 2020-08-11 2022-12-23 연세대학교 산학협력단 압전성과 발광성이 동기화된 소재 및 이를 포함하는 소자
CN112592713B (zh) * 2020-12-22 2023-10-13 深圳扑浪创新科技有限公司 一种量子点材料及其制备方法和应用
CN113224185A (zh) * 2021-05-07 2021-08-06 张棕奕 —种核壳纳米锥阵列太阳能电池
CN115725297B (zh) * 2022-12-10 2023-09-08 福州大学 一种纳米板异质结构的CdS-CdTe-CdS量子阱材料及其制备方法
WO2025252415A1 (en) * 2024-06-03 2025-12-11 Ams-Osram International Gmbh Nanoparticle, method for producing a nanoparticle, and light-emitting device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2569427B1 (fr) * 1984-08-23 1986-11-14 Commissariat Energie Atomique Procede et dispositif de depot sur un substrat d'une couche mince d'un compose comportant au moins un constituant cationique et au moins un constituant anionique
US5300793A (en) * 1987-12-11 1994-04-05 Hitachi, Ltd. Hetero crystalline structure and semiconductor device using it
US5319219A (en) * 1992-05-22 1994-06-07 Minnesota Mining And Manufacturing Company Single quantum well II-VI laser diode without cladding
US6322901B1 (en) * 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6207392B1 (en) 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6306610B1 (en) * 1998-09-18 2001-10-23 Massachusetts Institute Of Technology Biological applications of quantum dots
US6251303B1 (en) * 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
WO2001071354A2 (en) 2000-03-20 2001-09-27 Massachusetts Institute Of Technology Inorganic particle conjugates
IL138471A0 (en) * 2000-09-14 2001-10-31 Yissum Res Dev Co Novel semiconductor materials and their uses
CA2453450A1 (en) * 2001-07-20 2003-11-06 Life Technologies Corporation Luminescent nanoparticles and methods for their preparation
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
ATE488625T1 (de) * 2002-08-13 2010-12-15 Massachusetts Inst Technology Halbleiter-nanokristallheterostrukturen
JP2006502232A (ja) 2002-08-15 2006-01-19 モウンギ ジー. バウエンディ 安定化された半導体ナノクリスタル
WO2004066361A2 (en) 2003-01-22 2004-08-05 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same

Also Published As

Publication number Publication date
EP1590171B1 (de) 2011-06-08
US20100308272A1 (en) 2010-12-09
US7919012B2 (en) 2011-04-05
EP1590171A2 (de) 2005-11-02
US20100171077A1 (en) 2010-07-08
US20150108405A1 (en) 2015-04-23
EP1590171A4 (de) 2007-02-21
US7767260B2 (en) 2010-08-03
WO2004066361A3 (en) 2004-11-18
US20050129947A1 (en) 2005-06-16
US8900481B2 (en) 2014-12-02
US9340726B2 (en) 2016-05-17
US9850426B2 (en) 2017-12-26
US20100163800A1 (en) 2010-07-01
WO2004066361A2 (en) 2004-08-05

Similar Documents

Publication Publication Date Title
ATE512115T1 (de) Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür
DE60235306D1 (de) Verfahren zur herstellung von kolloidale nanokrist
DE60334909D1 (de) Poröse perlen und herstellungsverfahren dafür
PT1180062E (pt) Metodo para a producao de micro e nanoparticulas morfologicamente uniformes utilizando micromisturadores
WO2008063658A3 (en) Semiconductor nanocrystals and compositions and devices including same
CY1119106T1 (el) Αντισωματα εναντι masp-2
CL2011000166A1 (es) Metodo para preparar tetrahidrobiopterina hidrolizando diacetilbiopterina a biopterina en presencia de una base en una mezcla bifasica de agua y solvente organico no miscible en agua e hidrogenando biopterina a tetrahidrobiopterina en presencia de un catalizador, ambas etapas a un ph de al menos 10 (divisional de la solicitud de patente de invencion no. 7-2009).
WO2005110916A3 (en) Iii-v semiconductor nanocrystal complexes and methods of making same
CA2557148A1 (en) Orthoester compositions and methods for reducing the viscosity of viscosified treatment fluids
BRPI0412509A (pt) processo para a preparação de pós de metal, liga e composto
ATE556845T1 (de) Lumineszierende nanopartikel und ihre herstellung
WO2004054499A3 (en) Platinum aggregates and process for producing the same
BRPI0409114A (pt) métodos para obter 68ga e para produzir um complexo de 68ga-radiomarcado, kit para a preparação de 68ga a partir de um gerador de 68ge/68ga, e, uso do mesmo
ZA200711088B (en) Stabilized liquid yeast preparation and method for producing the same, and the use thereof
WO2005019104A3 (en) Controlled nanotube fabrication and uses
UA88308C2 (ru) Агент образования олеогеля, который содержит тритерпен, олеогель и способ его получения
WO2005012356A3 (en) Gelatin capsules
WO2006137855A3 (en) Method for the production of polymerized nanoparticles and microparticles by ternary agent concentration and temperature alteration induced immiscibility
EP1517972A4 (de) Metallpolierzusammensetzung, polierverfahren unter verwendung der zusammensetzung sowie verfahren zur waferherstellung nach dem polierverfahren
EP1600207A4 (de) Emulgator, verfahren zur herstellung desselben und den emulgator verwendende emulgierte zusammensetzung
GT200400134A (es) Sistemas emulsionantes que contienen derivados de azetidina
DE60231385D1 (de) Formulierungen, die eingeschlossene wirkstoffe enthalten, und ihre verwendung
CO5700170A1 (es) Paquete tensoactivo para el tratamiento de pozos y un metodo para su utilizacion
DE60238070D1 (de) Pinienzapfenextrakte und ihre verwendung
BRPI0412707B8 (pt) processo para preparo de partículas contendo itraconazol na forma de um co-precipitado e partículas

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties