ATE48708T1 - Verfahren zum erzeugen von negativen bildern in einer photolackschicht. - Google Patents

Verfahren zum erzeugen von negativen bildern in einer photolackschicht.

Info

Publication number
ATE48708T1
ATE48708T1 AT85870142T AT85870142T ATE48708T1 AT E48708 T1 ATE48708 T1 AT E48708T1 AT 85870142 T AT85870142 T AT 85870142T AT 85870142 T AT85870142 T AT 85870142T AT E48708 T1 ATE48708 T1 AT E48708T1
Authority
AT
Austria
Prior art keywords
layer
photosensitive resin
silicon compound
portions
irradiated portions
Prior art date
Application number
AT85870142T
Other languages
English (en)
Inventor
Bruno Roland
August Vrancken
Original Assignee
Ucb Electronics S A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ucb Electronics S A filed Critical Ucb Electronics S A
Application granted granted Critical
Publication of ATE48708T1 publication Critical patent/ATE48708T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Compounds Of Unknown Constitution (AREA)
AT85870142T 1984-10-26 1985-10-24 Verfahren zum erzeugen von negativen bildern in einer photolackschicht. ATE48708T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB848427149A GB8427149D0 (en) 1984-10-26 1984-10-26 Resist materials
EP85870142A EP0184567B1 (de) 1984-10-26 1985-10-24 Verfahren zum Erzeugen von negativen Bildern in einer Photolackschicht

Publications (1)

Publication Number Publication Date
ATE48708T1 true ATE48708T1 (de) 1989-12-15

Family

ID=10568805

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85870142T ATE48708T1 (de) 1984-10-26 1985-10-24 Verfahren zum erzeugen von negativen bildern in einer photolackschicht.

Country Status (11)

Country Link
EP (1) EP0184567B1 (de)
JP (2) JPS61107346A (de)
KR (1) KR940004423B1 (de)
AT (1) ATE48708T1 (de)
CA (1) CA1275846C (de)
DE (1) DE3574788D1 (de)
GB (1) GB8427149D0 (de)
IE (1) IE56708B1 (de)
IL (1) IL76702A (de)
MY (1) MY100941A (de)
SU (1) SU1498400A3 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
CA1267378A (en) * 1984-12-07 1990-04-03 Jer-Ming Yang Top imaged and organosilicon treated polymer layer developable with plasma
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
CA1282273C (en) * 1985-03-19 1991-04-02 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
JPS61268028A (ja) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ホトレジスト中にマスク像を現像する方法
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
EP0249457B1 (de) * 1986-06-12 1991-08-21 Matsushita Electric Industrial Co., Ltd. Bilderzeugungsverfahren
EP0250762B1 (de) * 1986-06-23 1995-03-08 International Business Machines Corporation Herstellung von permeabelen polymeren Filmen oder Schichten durch Auslaugung
JPS63165845A (ja) * 1986-12-26 1988-07-09 Toshiba Corp パタ−ン形成方法
CA1286424C (en) * 1987-01-12 1991-07-16 William C. Mccolgin Bilayer lithographic process
NL8700421A (nl) * 1987-02-20 1988-09-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
JPS6479743A (en) * 1987-09-22 1989-03-24 Nippon Telegraph & Telephone Pattern forming method by dry developing
JP2506133B2 (ja) * 1987-11-18 1996-06-12 日本電信電話株式会社 パタ―ン形成方法
US5272026A (en) * 1987-12-18 1993-12-21 Ucb S.A. Negative image process utilizing photosensitive compositions containing aromatic fused polycyclic sulfonic acid and partial ester or phenolic resin with diazoquinone sulfonic acid or diazoquinone carboxylic acid, and associated imaged article
GB8729510D0 (en) * 1987-12-18 1988-02-03 Ucb Sa Photosensitive compositions containing phenolic resins & diazoquinone compounds
JPH01186934A (ja) * 1988-01-21 1989-07-26 Toshiba Corp パターン形成方法
JPH01302726A (ja) * 1988-02-10 1989-12-06 Japan Synthetic Rubber Co Ltd 反応性イオンエッチング装置
JP2623309B2 (ja) * 1988-02-22 1997-06-25 ユーシービー ソシエテ アノニム レジストパターンを得る方法
JP2521329B2 (ja) * 1988-07-04 1996-08-07 シャープ株式会社 半導体装置の製造方法
JPH0269746A (ja) * 1988-08-01 1990-03-08 Internatl Business Mach Corp <Ibm> ホトレジストの形成方法、ポリマー構造体、ホトレジスト
US5094936A (en) * 1988-09-16 1992-03-10 Texas Instruments Incorporated High pressure photoresist silylation process and apparatus
EP0366937A2 (de) * 1988-10-31 1990-05-09 International Business Machines Corporation Verfahren zur Herstellung von Reliefstrukturen und Anwendung
JPH02161432A (ja) * 1988-12-14 1990-06-21 Nec Corp 微細パターン形成方法
JP2848625B2 (ja) * 1989-03-31 1999-01-20 株式会社東芝 パターン形成方法
JP2930971B2 (ja) * 1989-06-22 1999-08-09 株式会社東芝 パターン形成方法
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
JPH043456A (ja) * 1990-04-19 1992-01-08 Nec Corp 能動層積層素子形成方法
US5061604A (en) * 1990-05-04 1991-10-29 Minnesota Mining And Manufacturing Company Negative crystalline photoresists for UV photoimaging
DE69208769T2 (de) * 1991-07-31 1996-07-18 Texas Instruments Inc Hochauflösendes lithographisches Verfahren
US5409434A (en) * 1992-01-30 1995-04-25 Toyota Jidosha Kabushiki Kaisha Control system with failsafe for shift-by-wire automatic transmission
KR100396559B1 (ko) * 2001-11-05 2003-09-02 삼성전자주식회사 일체형 잉크젯 프린트헤드의 제조 방법
JP5324361B2 (ja) * 2009-08-28 2013-10-23 東京応化工業株式会社 表面処理剤及び表面処理方法
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4232110A (en) * 1979-03-12 1980-11-04 Bell Telephone Laboratories, Incorporated Solid state devices formed by differential plasma etching of resists
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
JPS5723937A (en) * 1980-07-17 1982-02-08 Matsushita Electric Ind Co Ltd Photographic etching method
US4396704A (en) * 1981-04-22 1983-08-02 Bell Telephone Laboratories, Incorporated Solid state devices produced by organometallic plasma developed resists
JPS57202533A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of pattern
JPS57202535A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of negative resist pattern
EP0091651B1 (de) * 1982-04-12 1988-08-03 Nippon Telegraph And Telephone Corporation Verfahren zur Herstellung von Mikrobildern
JPS5961928A (ja) * 1982-10-01 1984-04-09 Hitachi Ltd パタ−ン形成方法
CA1248402A (en) * 1983-09-16 1989-01-10 Larry E. Stillwagon Method of making articles using gas functionalized plasma developed layer
JPS60501777A (ja) * 1983-11-02 1985-10-17 ヒユ−ズ・エアクラフト・カンパニ− 二酸化ケイ素系グラフト重合リソグラフマスク
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist

Also Published As

Publication number Publication date
DE3574788D1 (de) 1990-01-18
IE852643L (en) 1986-04-26
JPH0220869A (ja) 1990-01-24
JPH065385B2 (ja) 1994-01-19
SU1498400A3 (ru) 1989-07-30
JPS61107346A (ja) 1986-05-26
KR940004423B1 (ko) 1994-05-25
GB8427149D0 (en) 1984-12-05
CA1275846C (en) 1990-11-06
JPH0456979B2 (de) 1992-09-10
IE56708B1 (en) 1991-11-06
MY100941A (en) 1991-05-31
EP0184567A1 (de) 1986-06-11
IL76702A (en) 1989-07-31
KR860003674A (ko) 1986-05-28
IL76702A0 (en) 1986-02-28
EP0184567B1 (de) 1989-12-13

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Legal Events

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