KR860003674A - 감광성내식막 층에서 음성패턴의 형성방법 - Google Patents
감광성내식막 층에서 음성패턴의 형성방법 Download PDFInfo
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- KR860003674A KR860003674A KR1019850007981A KR850007981A KR860003674A KR 860003674 A KR860003674 A KR 860003674A KR 1019850007981 A KR1019850007981 A KR 1019850007981A KR 850007981 A KR850007981 A KR 850007981A KR 860003674 A KR860003674 A KR 860003674A
- Authority
- KR
- South Korea
- Prior art keywords
- photosensitive resin
- layer
- resin layer
- compound
- diazo
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract 18
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 2
- 239000011347 resin Substances 0.000 claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 7
- 238000001020 plasma etching Methods 0.000 claims abstract description 4
- 230000005855 radiation Effects 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims abstract 11
- 229920000642 polymer Polymers 0.000 claims abstract 8
- 239000003795 chemical substances by application Substances 0.000 claims abstract 3
- 239000011248 coating agent Substances 0.000 claims abstract 3
- 238000000576 coating method Methods 0.000 claims abstract 3
- 230000015572 biosynthetic process Effects 0.000 claims abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims 5
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims 4
- 125000003118 aryl group Chemical group 0.000 claims 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 4
- 125000005843 halogen group Chemical group 0.000 claims 3
- 125000000217 alkyl group Chemical group 0.000 claims 2
- PARMADWNFXEEFC-UHFFFAOYSA-N bamethan sulfate Chemical compound [O-]S([O-])(=O)=O.CCCC[NH2+]CC(O)C1=CC=C(O)C=C1.CCCC[NH2+]CC(O)C1=CC=C(O)C=C1 PARMADWNFXEEFC-UHFFFAOYSA-N 0.000 claims 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 claims 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 claims 1
- TUXAJHDLJHMOQB-UHFFFAOYSA-N 2-diazonio-4-sulfonaphthalen-1-olate Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC([N+]#N)=C([O-])C2=C1 TUXAJHDLJHMOQB-UHFFFAOYSA-N 0.000 claims 1
- VJKZIQFVKMUTID-UHFFFAOYSA-N 2-diazonio-5-sulfonaphthalen-1-olate Chemical compound N#[N+]C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1[O-] VJKZIQFVKMUTID-UHFFFAOYSA-N 0.000 claims 1
- QHIBNGIZPPHJAT-UHFFFAOYSA-N 4-diazonio-3-hydroxynaphthalene-1-sulfonate Chemical compound C1=CC=CC2=C([N+]#N)C(O)=CC(S([O-])(=O)=O)=C21 QHIBNGIZPPHJAT-UHFFFAOYSA-N 0.000 claims 1
- ZLMXIUKPTXWIFK-UHFFFAOYSA-N 4-oxocyclohexa-1,5-diene-1-sulfonic acid Chemical compound OS(=O)(=O)C1=CCC(=O)C=C1 ZLMXIUKPTXWIFK-UHFFFAOYSA-N 0.000 claims 1
- FMKJOIPHUWRXQS-UHFFFAOYSA-N C1(C(N1)=O)=O.C(C)C=1C(=[Si](C=CC1)CC)CC Chemical compound C1(C(N1)=O)=O.C(C)C=1C(=[Si](C=CC1)CC)CC FMKJOIPHUWRXQS-UHFFFAOYSA-N 0.000 claims 1
- JOOMLFKONHCLCJ-UHFFFAOYSA-N N-(trimethylsilyl)diethylamine Chemical compound CCN(CC)[Si](C)(C)C JOOMLFKONHCLCJ-UHFFFAOYSA-N 0.000 claims 1
- YKFRUJSEPGHZFJ-UHFFFAOYSA-N N-trimethylsilylimidazole Chemical compound C[Si](C)(C)N1C=CN=C1 YKFRUJSEPGHZFJ-UHFFFAOYSA-N 0.000 claims 1
- HASUBYBLESEVII-UHFFFAOYSA-N NC(=O)N.CC=1C(=[Si](C=CC1)C)C Chemical compound NC(=O)N.CC=1C(=[Si](C=CC1)C)C HASUBYBLESEVII-UHFFFAOYSA-N 0.000 claims 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims 1
- TWSOFXCPBRATKD-UHFFFAOYSA-N [diphenyl-(triphenylsilylamino)silyl]benzene Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)N[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 TWSOFXCPBRATKD-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- IYYIVELXUANFED-UHFFFAOYSA-N bromo(trimethyl)silane Chemical compound C[Si](C)(C)Br IYYIVELXUANFED-UHFFFAOYSA-N 0.000 claims 1
- 239000004202 carbamide Substances 0.000 claims 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 1
- 239000002738 chelating agent Substances 0.000 claims 1
- SXSNZRHGAMVNJE-UHFFFAOYSA-N chloro-[[[chloromethyl(dimethyl)silyl]amino]-dimethylsilyl]methane Chemical compound ClC[Si](C)(C)N[Si](C)(C)CCl SXSNZRHGAMVNJE-UHFFFAOYSA-N 0.000 claims 1
- 229920001577 copolymer Chemical group 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 239000005055 methyl trichlorosilane Substances 0.000 claims 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims 1
- ZSMNRKGGHXLZEC-UHFFFAOYSA-N n,n-bis(trimethylsilyl)methanamine Chemical compound C[Si](C)(C)N(C)[Si](C)(C)C ZSMNRKGGHXLZEC-UHFFFAOYSA-N 0.000 claims 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 claims 1
- LWFWUJCJKPUZLV-UHFFFAOYSA-N n-trimethylsilylacetamide Chemical compound CC(=O)N[Si](C)(C)C LWFWUJCJKPUZLV-UHFFFAOYSA-N 0.000 claims 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims 1
- 230000000361 pesticidal effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 1
- 239000005051 trimethylchlorosilane Substances 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Silver Salt Photography Or Processing Solution Therefor (AREA)
- Compounds Of Unknown Constitution (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 노출단계이전의 감광성 수지층으로 피복된 실리콘 웨이퍼(wafer)의 부분단면도.
제2도는 마스크(mask)를 통해 광선에 노출시키는 동안의 감광성 수지층으로 피복된 실리콘 웨이퍼의 부분단면도.
제3도는 실리콘 화합물로 처리한 뒤의 감광성 수지층으로 피복된 실리콘 웨이퍼의 부분단면도.
제4도는 산소-반응이온 또는 산소플라즈마에칭(plasma etching)에 의한 현상후에 얻어진 음성패턴(negative pattern)의 부분단면도.
* 도면의 주요부호 설명
1 : 감광성수지층, 2 : 기질, 3 : 가시 또는 자외복사, 4 : 감광영상 마스크(mask), 5 : 조사된 부분, 6 : 조사된 부분의 상부.
Claims (16)
- (a)감광활성 화합물에 혼합되었거나 또는 결합된 중합체를 함유하는 감광성 수지의 층으로서 기질을 피복하며, 상기한 층은 그것이 가시 또는 자외복사에 노출되었을때 그것의 조사된 부분에서 실리콘 화합물이 선택적으로 확산할 수 있는 특징을 지니며 : (b) 층의 단지 선택된 부분만이 노출되도록 마스크를 통해자외 또는 가시광선에 감광성 수지층을 노출시키며 : (c) 실리콘 화합물로서 감광성 수지층을 처리하며, 그것에 의해 상기한 실리콘 화합물은 피복면의 조사된 부분내로 선택적으로 확산하고 상기의 조사된 부분과 반응이 일어나며 : 그리고 (d) 원하는 음성패턴을 얻기위해 감광성 수지층을 플라즈마에칭에 의해 건조현상하여 그것의 비조사된 부분을 선택적으로 제거하는 단계를 포함하는 것을 특징으로 하는 감광성 내식만층에서 음성패턴의 형성방법.
- 제1항에 있어서, 감광활성 화합물이 디아조퀴논인 것을 특징으로 하는 상기의 방법.
- 제2항에 있어서, 디아조퀴논이 5-디아조-5'6-디히드로-6-옥소-1-나프탄렌술폰산, 6-디아조-5,6-디히드로-5-옥소-1-나프탈렌술폰산, 3-디아조-3,4-디히드로-4-옥소-1-나프탈렌술폰산, 4-디아조-3,4-디히드로-3-옥소-1-나프탈렌술폰산, 3-디아조-3,4-디히드로-4-옥소-1-벤젠술폰산, 상응하는 카르복실산, 그것의 유도체 및 적어도 두개의 상기한 화합물의 혼합물로 구성되는 그룹으로부터 선택되는 것을 특징으로 하는 상기의 방법.
- 제1항에 있어서, 중합체가 페놀중합체인 것을 특징으로 하는 상기의 방법.
- 제4항에 있어서, 페놀중합체가 할로겐원자에 의해 치환될수 있는, 지방 또는 방향족 알레히드로서, 페놀 또는 나프톨의 농충생성물 또는 알킬 또는 아릴기 또는 할로겐 원자에 의해 링-치환된 그것의 유도체의 농축생성물. 폴리(비닐페놀), 이것의 페놀그룹은 알킬 또는 아릴기 또는 할로겐원자에 의해 치환될수 있으며, 에틸렌적으로 비포화된 화합물로서 비닐페놀의 공중합체, 그리고 상기한 중합체 사이의 혼합물 또는 그 중 합체와 다른 방향족 중합체와의 혼합물로부터 선택되는 것을 특징으로 하는 상기의 방법.
- 제1항에 있어서, 감광성 수지층이 다이를 더욱더 포함하는 것을 특징으로 하는 상기의 방법.
- 제1항에 있어서, 실리콘 화합물이 쉽게 기화할 수 있는 시릴레이트 작용제인 것을 특징으로 하는 상기의 방법.
- 제1항에 있어서, 실리콘 화합물이 테트라클로로실란, 트리메틸클로로실란, 디메틸디클로로실란, 메틸트리클로로실란, 트리메틸브로모실란, 트리메틸이오도실란트리메틸클로로실란, 헥사메틸디실아잔, 헵타메틸디실아잔, 헥사페닐디실아잔, 1,3-비스(클로로메틸)-1,1,3,3-테트라메틸디실아잔, N-트라메틸실릴이미다졸, N-트리메틸실릴아세트아미드, N-트리메틸실릴디에틸아민, N-트리메틸실릴디메틸아민, 핵사메틸실란디아만, N,O-비스(트리에틸실린)아세트이미드, N,N'-비스(트리메틸실린)우레아, N,N'-디페닐-N-(트리메틸실릴)우레아 및 적어도 두개의 상기 화합물의 혼합물로부터 선택된 시릴레이트 작용제인 것을 특징으로 하는 상기의 방법.
- 제8항에 있어서, 시릴레이트 작용제가 헥사메틸디실아잔인 것을 특징으로 하는 상기의 방법.
- 제10항에 있어서, 실리콘 화합물로서 감광성 수지층의 처리가 -20내지 150 ℃ C의 온도에서 수행되는 것을 특징으로 하는 상기의 방법.
- 제10항에 있어서, 상기한 처리한 60과 140 ℃ 사이의 온도에서 수행되는 것을 특징으로 하는 상기의 방법.
- 제1항에 있어서, 실리콘 화합물로서 감광성 수지층의 처리시간은 수초에서 한시간 사이의 범위에 있는것을 특징으로 하는 상기의 방법.
- 제12항에 있어서, 상기한 처리시간이 1과 45분 사이에 있는것을 특징으로 하는 상기의 방법.
- 제1항에 있어서, 건조현상은 산소-반응이온 또는 산소플라즈마 에칭에 의해 수행하는 것을 특징으로 하는 상기의 방법.
- 제1항의 방법으로 제조된 집적반도체회로.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB848427149A GB8427149D0 (en) | 1984-10-26 | 1984-10-26 | Resist materials |
| GB84/27149 | 1984-10-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR860003674A true KR860003674A (ko) | 1986-05-28 |
| KR940004423B1 KR940004423B1 (ko) | 1994-05-25 |
Family
ID=10568805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019850007981A KR940004423B1 (ko) | 1984-10-26 | 1985-10-26 | 포토래지스트층에서 네거티브 패턴을 형성하는 방법 |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP0184567B1 (ko) |
| JP (2) | JPS61107346A (ko) |
| KR (1) | KR940004423B1 (ko) |
| AT (1) | ATE48708T1 (ko) |
| CA (1) | CA1275846C (ko) |
| DE (1) | DE3574788D1 (ko) |
| GB (1) | GB8427149D0 (ko) |
| IE (1) | IE56708B1 (ko) |
| IL (1) | IL76702A (ko) |
| MY (1) | MY100941A (ko) |
| SU (1) | SU1498400A3 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100396559B1 (ko) * | 2001-11-05 | 2003-09-02 | 삼성전자주식회사 | 일체형 잉크젯 프린트헤드의 제조 방법 |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1267378A (en) * | 1984-12-07 | 1990-04-03 | Jer-Ming Yang | Top imaged and organosilicon treated polymer layer developable with plasma |
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| JP2848625B2 (ja) * | 1989-03-31 | 1999-01-20 | 株式会社東芝 | パターン形成方法 |
| JP2930971B2 (ja) * | 1989-06-22 | 1999-08-09 | 株式会社東芝 | パターン形成方法 |
| US5139925A (en) * | 1989-10-18 | 1992-08-18 | Massachusetts Institute Of Technology | Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser |
| JPH043456A (ja) * | 1990-04-19 | 1992-01-08 | Nec Corp | 能動層積層素子形成方法 |
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| US4232110A (en) * | 1979-03-12 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Solid state devices formed by differential plasma etching of resists |
| US4307178A (en) * | 1980-04-30 | 1981-12-22 | International Business Machines Corporation | Plasma develoment of resists |
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| US4396704A (en) * | 1981-04-22 | 1983-08-02 | Bell Telephone Laboratories, Incorporated | Solid state devices produced by organometallic plasma developed resists |
| JPS57202533A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Formation of pattern |
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| US4552833A (en) * | 1984-05-14 | 1985-11-12 | International Business Machines Corporation | Radiation sensitive and oxygen plasma developable resist |
-
1984
- 1984-10-26 GB GB848427149A patent/GB8427149D0/en active Pending
-
1985
- 1985-10-14 IL IL76702A patent/IL76702A/xx not_active IP Right Cessation
- 1985-10-18 CA CA000493257A patent/CA1275846C/en not_active Expired - Lifetime
- 1985-10-24 EP EP85870142A patent/EP0184567B1/fr not_active Expired
- 1985-10-24 AT AT85870142T patent/ATE48708T1/de not_active IP Right Cessation
- 1985-10-24 JP JP60238553A patent/JPS61107346A/ja active Granted
- 1985-10-24 DE DE8585870142T patent/DE3574788D1/de not_active Expired - Lifetime
- 1985-10-25 SU SU853974782A patent/SU1498400A3/ru active
- 1985-10-25 IE IE2643/85A patent/IE56708B1/en not_active IP Right Cessation
- 1985-10-26 KR KR1019850007981A patent/KR940004423B1/ko not_active IP Right Cessation
-
1987
- 1987-06-01 MY MYPI87000750A patent/MY100941A/en unknown
-
1988
- 1988-10-11 JP JP63255722A patent/JPH065385B2/ja not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100396559B1 (ko) * | 2001-11-05 | 2003-09-02 | 삼성전자주식회사 | 일체형 잉크젯 프린트헤드의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0184567A1 (fr) | 1986-06-11 |
| EP0184567B1 (fr) | 1989-12-13 |
| IE56708B1 (en) | 1991-11-06 |
| JPH0220869A (ja) | 1990-01-24 |
| IE852643L (en) | 1986-04-26 |
| IL76702A0 (en) | 1986-02-28 |
| JPS61107346A (ja) | 1986-05-26 |
| MY100941A (en) | 1991-05-31 |
| JPH0456979B2 (ko) | 1992-09-10 |
| SU1498400A3 (ru) | 1989-07-30 |
| JPH065385B2 (ja) | 1994-01-19 |
| ATE48708T1 (de) | 1989-12-15 |
| DE3574788D1 (de) | 1990-01-18 |
| GB8427149D0 (en) | 1984-12-05 |
| CA1275846C (en) | 1990-11-06 |
| KR940004423B1 (ko) | 1994-05-25 |
| IL76702A (en) | 1989-07-31 |
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