ATE431574T1 - Ätzverfahren und verwendung einer zusammensetzung zur bildung einer ätzschutzschicht - Google Patents

Ätzverfahren und verwendung einer zusammensetzung zur bildung einer ätzschutzschicht

Info

Publication number
ATE431574T1
ATE431574T1 AT02762996T AT02762996T ATE431574T1 AT E431574 T1 ATE431574 T1 AT E431574T1 AT 02762996 T AT02762996 T AT 02762996T AT 02762996 T AT02762996 T AT 02762996T AT E431574 T1 ATE431574 T1 AT E431574T1
Authority
AT
Austria
Prior art keywords
forming
etching
composition
protection layer
water
Prior art date
Application number
AT02762996T
Other languages
English (en)
Inventor
Hatsuyuki Tanaka
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Application granted granted Critical
Publication of ATE431574T1 publication Critical patent/ATE431574T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Paints Or Removers (AREA)
AT02762996T 2001-09-13 2002-09-04 Ätzverfahren und verwendung einer zusammensetzung zur bildung einer ätzschutzschicht ATE431574T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001277600A JP4237430B2 (ja) 2001-09-13 2001-09-13 エッチング方法及びエッチング保護層形成用組成物
PCT/JP2002/008962 WO2003025677A1 (fr) 2001-09-13 2002-09-04 Procede de gravure et composition permettant de former une couche de protection contre la gravure

Publications (1)

Publication Number Publication Date
ATE431574T1 true ATE431574T1 (de) 2009-05-15

Family

ID=19102105

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02762996T ATE431574T1 (de) 2001-09-13 2002-09-04 Ätzverfahren und verwendung einer zusammensetzung zur bildung einer ätzschutzschicht

Country Status (9)

Country Link
US (1) US7141177B2 (de)
EP (1) EP1429185B1 (de)
JP (1) JP4237430B2 (de)
KR (1) KR100884910B1 (de)
CN (1) CN100478781C (de)
AT (1) ATE431574T1 (de)
DE (1) DE60232343D1 (de)
TW (1) TW575790B (de)
WO (1) WO2003025677A1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4235466B2 (ja) * 2003-02-24 2009-03-11 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法
JP4012480B2 (ja) * 2003-03-28 2007-11-21 Ａｚエレクトロニックマテリアルズ株式会社 微細パターン形成補助剤及びその製造法
WO2005013011A1 (ja) 2003-08-04 2005-02-10 Fujitsu Limited レジストパターン厚肉化材料、それを用いたレジストパターンの製造方法及び半導体装置の製造方法
JP4490228B2 (ja) 2004-06-15 2010-06-23 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
JP4679997B2 (ja) * 2004-08-31 2011-05-11 Ａｚエレクトロニックマテリアルズ株式会社 微細パターン形成方法
JP4718145B2 (ja) 2004-08-31 2011-07-06 富士通株式会社 半導体装置及びゲート電極の製造方法
JP4583860B2 (ja) 2004-10-04 2010-11-17 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、並びに、半導体装置及びその製造方法
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP4676325B2 (ja) 2005-02-18 2011-04-27 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
KR20060095318A (ko) * 2005-02-28 2006-08-31 삼성에스디아이 주식회사 전자 방출 소자와 이의 제조 방법
CN1702547B (zh) * 2005-03-29 2010-04-07 中国科学院光电技术研究所 一种高精度灰度掩模制作方法
JP4566862B2 (ja) 2005-08-25 2010-10-20 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
JP4657899B2 (ja) 2005-11-30 2011-03-23 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
JP4675227B2 (ja) * 2005-12-21 2011-04-20 トヨタ自動車株式会社 凸部の頂面に被覆膜を形成する方法
JP4724073B2 (ja) 2006-08-17 2011-07-13 富士通株式会社 レジストパターンの形成方法、半導体装置及びその製造方法
JP4739150B2 (ja) 2006-08-30 2011-08-03 富士通株式会社 レジストカバー膜形成材料、レジストパターンの形成方法、電子デバイス及びその製造方法
JP4801550B2 (ja) 2006-09-26 2011-10-26 富士通株式会社 レジスト組成物、レジストパターンの形成方法、及び半導体装置の製造方法
JP5018307B2 (ja) 2006-09-26 2012-09-05 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
JP2009295745A (ja) * 2008-06-04 2009-12-17 Toshiba Corp 半導体装置の製造方法
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP5659872B2 (ja) 2010-10-22 2015-01-28 富士通株式会社 レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法
JP5659873B2 (ja) 2010-12-16 2015-01-28 富士通株式会社 レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法
JP5708071B2 (ja) 2011-03-11 2015-04-30 富士通株式会社 レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法
ES2930455T3 (es) 2015-11-09 2022-12-13 Furukawa Electric Co Ltd Cinta de protección de superficie con máscara integrada
CN108351606A (zh) 2015-11-19 2018-07-31 Az电子材料（卢森堡）有限公司 用于形成细微抗蚀图案的组合物和使用该组合物的图案形成方法
CN108267934B (zh) * 2016-12-30 2021-03-30 臻鼎科技股份有限公司 水溶性感光树脂组合物、覆盖膜及电路板
CN110997975B (zh) * 2017-07-14 2022-09-09 英福康控股股份公司 从部件的表面受控地除去保护层的方法
KR102562023B1 (ko) * 2018-01-30 2023-08-01 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치 및 에칭액

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
DE3170974D1 (en) * 1981-02-16 1985-07-25 Ibm Method for increasing the resistance of a solid material surface against etching
JPS57167360A (en) * 1981-04-08 1982-10-15 Kuraray Co Ltd Vibration-damping paint
US4677174A (en) * 1986-04-21 1987-06-30 American Colloid Company Water absorbent styrene-acrylic acid copolymers
US4687541A (en) * 1986-09-22 1987-08-18 Rockwell International Corporation Dual deposition single level lift-off process
JP2590342B2 (ja) * 1986-11-08 1997-03-12 住友化学工業株式会社 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物
US4873176A (en) * 1987-08-28 1989-10-10 Shipley Company Inc. Reticulation resistant photoresist coating
US5209768A (en) * 1991-06-14 1993-05-11 American Colloid Company Method of improving sod growth
JP2680508B2 (ja) * 1992-06-05 1997-11-19 関西ペイント株式会社 常乾用水性塗料
US5547812A (en) * 1995-06-05 1996-08-20 International Business Machines Corporation Composition for eliminating microbridging in chemically amplified photoresists comprising a polymer blend of a poly(hydroxystyrene) and a copolymer made of hydroxystyrene and an acrylic monomer
TW329539B (en) * 1996-07-05 1998-04-11 Mitsubishi Electric Corp The semiconductor device and its manufacturing method
JP3071401B2 (ja) 1996-07-05 2000-07-31 三菱電機株式会社 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置
JPH10120968A (ja) * 1996-08-28 1998-05-12 Hitachi Chem Co Ltd レジスト保護膜用樹脂組成物、レジスト保護膜及びこれを用いたパターン製造法
TW464791B (en) 1996-09-30 2001-11-21 Hoechst Celanese Corp Bottom antireflective coatings containing an arylhydrazo dye
TW372337B (en) * 1997-03-31 1999-10-21 Mitsubishi Electric Corp Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus
JP3189773B2 (ja) 1998-01-09 2001-07-16 三菱電機株式会社 レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置
JP3924910B2 (ja) 1998-03-31 2007-06-06 三菱電機株式会社 半導体装置の製造方法
JP3950584B2 (ja) 1999-06-29 2007-08-01 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物
JP2001109165A (ja) 1999-10-05 2001-04-20 Clariant (Japan) Kk パターン形成方法

Also Published As

Publication number Publication date
US20040238486A1 (en) 2004-12-02
CN1555510A (zh) 2004-12-15
CN100478781C (zh) 2009-04-15
EP1429185A4 (de) 2006-06-07
EP1429185A1 (de) 2004-06-16
DE60232343D1 (de) 2009-06-25
US7141177B2 (en) 2006-11-28
JP2003084457A (ja) 2003-03-19
KR20040035782A (ko) 2004-04-29
KR100884910B1 (ko) 2009-02-20
TW575790B (en) 2004-02-11
JP4237430B2 (ja) 2009-03-11
EP1429185B1 (de) 2009-05-13
WO2003025677A1 (fr) 2003-03-27

Similar Documents

Publication Publication Date Title
ATE431574T1 (de) Ätzverfahren und verwendung einer zusammensetzung zur bildung einer ätzschutzschicht
ATE365974T1 (de) Verfahren zur herstellung von organischen optoelektronischen und elektronischen bauteilen sowie dadurch erhaltene bauteile
TW200510937A (en) Antireflective film material, and antireflective film and pattern formation method using the same
TW200518172A (en) Photomask, and method for forming pattern
DE602005012068D1 (de) Kopieren eines Musters mit Hilfe eines Zwischenstempels
WO2005070167A8 (en) Nanoscale electric lithography
TW429419B (en) Method of manufacturing semiconductor devices
WO2003036686A3 (en) Method of patterning electrically conductive polymers
TW536927B (en) Process for forming a pattern having electrically functional properties, intermediate having a pattern for forming electrically functional properties, and apparatus for forming a circuit pattern
JP4625445B2 (ja) モールドの製造方法。
ATE310263T1 (de) Verfahren zur herstellung einer einheit mit einer räumlichen oberflächenstrukturierung sowie verwendung dieses verfahrens
JPH07199485A (ja) フォトレジストの除去方法
ATE309104T1 (de) Verfahren zur herstellung einer flexiblen gummituchhülse
KR950034585A (ko) 고온 금속층상의 절연층 형성방법
TW370687B (en) Manufacturing method for forming an opening with deep ultra-violet photoresist
KR100674660B1 (ko) 포토레지스트 코팅의 제조 방법
TW399298B (en) Manufacturing method of via hole
WO2004012232A3 (en) Forming bilayer resist patterns
WO2004027519A3 (en) Dummy patterns for reducing proximity effects and method of using same
KR19990059158A (ko) 실리레이션을 이용한 감광막패턴 형성방법
WO2008015635A3 (en) Photolithography
KR100380274B1 (ko) 디유브이 공정을 이용한 실리콘 산화막 식각방법
CN107078196B (zh) 用于制造光电子半导体部件的方法和光电子半导体部件
KR960039164A (ko) 반도체막 제조방법
KR970018041A (ko) 반도체 소자의 미세 콘택홀 형성 방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties