ATE429031T1 - Belichtungsverfahren - Google Patents

Belichtungsverfahren

Info

Publication number
ATE429031T1
ATE429031T1 AT04771271T AT04771271T ATE429031T1 AT E429031 T1 ATE429031 T1 AT E429031T1 AT 04771271 T AT04771271 T AT 04771271T AT 04771271 T AT04771271 T AT 04771271T AT E429031 T1 ATE429031 T1 AT E429031T1
Authority
AT
Austria
Prior art keywords
wafer
wafer stage
interchange
exposure
stages
Prior art date
Application number
AT04771271T
Other languages
English (en)
Inventor
Yuichi Shibazaki
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of ATE429031T1 publication Critical patent/ATE429031T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT04771271T 2003-08-07 2004-08-05 Belichtungsverfahren ATE429031T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003288919 2003-08-07
PCT/JP2004/011244 WO2005015615A1 (ja) 2003-08-07 2004-08-05 露光方法及び露光装置、ステージ装置、並びにデバイス製造方法

Publications (1)

Publication Number Publication Date
ATE429031T1 true ATE429031T1 (de) 2009-05-15

Family

ID=34131533

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04771271T ATE429031T1 (de) 2003-08-07 2004-08-05 Belichtungsverfahren

Country Status (9)

Country Link
US (3) US20060187431A1 (de)
EP (2) EP1995769A1 (de)
JP (2) JP4552146B2 (de)
KR (2) KR101205263B1 (de)
CN (2) CN100468624C (de)
AT (1) ATE429031T1 (de)
DE (1) DE602004020634D1 (de)
TW (1) TW200511390A (de)
WO (1) WO2005015615A1 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060129387A (ko) * 2004-02-19 2006-12-15 가부시키가이샤 니콘 노광 장치, 노광 방법, 디바이스 제조 방법
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
EP2197027A3 (de) * 2005-05-18 2017-04-26 Murata Manufacturing Co., Ltd. Ausrichtbühne, Beulenbildungsvorrichtung und Beulenbildungsverfahren mit einer solchen Ausrichtungsbühne
KR101254796B1 (ko) * 2005-12-29 2013-04-15 엘지전자 주식회사 노광장치 및 그 제어방법
CN100456138C (zh) * 2006-06-13 2009-01-28 上海微电子装备有限公司 浸没式光刻机浸液流场维持系统
JP2008021748A (ja) * 2006-07-11 2008-01-31 Canon Inc 露光装置
JP5151989B2 (ja) * 2006-11-09 2013-02-27 株式会社ニコン 保持装置、位置検出装置及び露光装置、並びにデバイス製造方法
US7973910B2 (en) * 2006-11-17 2011-07-05 Nikon Corporation Stage apparatus and exposure apparatus
JP2008140992A (ja) * 2006-12-01 2008-06-19 Canon Inc 露光装置
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
JP4992668B2 (ja) * 2007-10-31 2012-08-08 旭硝子株式会社 容器交換装置および容器交換方法
JP2009284608A (ja) * 2008-05-20 2009-12-03 Canon Inc パルスモータ、位置決め装置、露光装置及びデバイス製造方法
US8508735B2 (en) 2008-09-22 2013-08-13 Nikon Corporation Movable body apparatus, movable body drive method, exposure apparatus, exposure method, and device manufacturing method
US8325325B2 (en) * 2008-09-22 2012-12-04 Nikon Corporation Movable body apparatus, movable body drive method, exposure apparatus, exposure method, and device manufacturing method
US8994923B2 (en) * 2008-09-22 2015-03-31 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8902402B2 (en) * 2008-12-19 2014-12-02 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8599359B2 (en) * 2008-12-19 2013-12-03 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and carrier method
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8760629B2 (en) * 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
CN101551599B (zh) * 2009-04-03 2011-07-20 清华大学 一种光刻机硅片台双台交换系统
CN101571676B (zh) * 2009-04-03 2010-12-01 清华大学 一种光刻机硅片台双台交换系统
CN101551598B (zh) * 2009-04-03 2010-12-01 清华大学 一种光刻机硅片台双台交换系统
US8970820B2 (en) 2009-05-20 2015-03-03 Nikon Corporation Object exchange method, exposure method, carrier system, exposure apparatus, and device manufacturing method
US8792084B2 (en) * 2009-05-20 2014-07-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8553204B2 (en) 2009-05-20 2013-10-08 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8446569B2 (en) * 2009-06-19 2013-05-21 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
IT1399285B1 (it) * 2009-07-03 2013-04-11 Applied Materials Inc Sistema di lavorazione substrato
US20110096312A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110102761A1 (en) * 2009-09-28 2011-05-05 Nikon Corporation Stage apparatus, exposure apparatus, and device fabricating method
US20110096306A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110096318A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110123913A1 (en) * 2009-11-19 2011-05-26 Nikon Corporation Exposure apparatus, exposing method, and device fabricating method
US20110128523A1 (en) * 2009-11-19 2011-06-02 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
CN101727019B (zh) * 2009-12-15 2011-05-11 清华大学 光刻机硅片台双台交换系统及其交换方法
CN101963763B (zh) * 2010-08-03 2012-06-06 哈尔滨工业大学 一种基于双驱双桥换台工位的双工件台高精度交换装置
CN102789143A (zh) * 2011-05-17 2012-11-21 川宝科技股份有限公司 曝光机标靶影像对位装置及使用该装置的曝光机
CN107479332B (zh) * 2011-08-30 2020-04-03 株式会社尼康 曝光装置、平板显示器的制造方法和元件制造方法
JP6243898B2 (ja) 2012-04-19 2017-12-06 インテヴァック インコーポレイテッド 太陽電池製造のための２重マスク装置
US10062600B2 (en) 2012-04-26 2018-08-28 Intevac, Inc. System and method for bi-facial processing of substrates
SG11201406893XA (en) 2012-04-26 2014-11-27 Intevac Inc System architecture for vacuum processing
JP6082884B2 (ja) * 2012-06-12 2017-02-22 サンエー技研株式会社 露光装置、露光方法
TWM523958U (zh) * 2014-08-01 2016-06-11 應用材料股份有限公司 用於執行光刻製程的處理系統
CN106688088B (zh) * 2014-08-05 2020-01-10 因特瓦克公司 注入掩膜及对齐
JP6655925B2 (ja) * 2015-09-24 2020-03-04 東京エレクトロン株式会社 ステージ装置及びプローブ装置
CN105607428B (zh) * 2015-12-30 2018-04-17 深圳市鑫富宝科技有限公司 一种自动曝光机机构
JP6353487B2 (ja) * 2016-05-26 2018-07-04 株式会社サーマプレシジョン 投影露光装置及びその投影露光方法
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
CN110520798B (zh) * 2017-03-31 2021-11-16 株式会社尼康 物体交换装置、物体处理装置、平板显示器的制造方法、元件制造方法、物体交换方法、以及物体处理方法
CN109240048A (zh) * 2018-11-06 2019-01-18 无锡影速半导体科技有限公司 一种多工位工件台一次曝光成型直写光刻系统
DE102018132001A1 (de) * 2018-12-12 2020-06-18 Laser Imaging Systems Gmbh Vorrichtung zum Belichten von plattenförmigen Werkstücken mit hohem Durchsatz
CN111610699A (zh) * 2019-02-22 2020-09-01 上海微电子装备（集团）股份有限公司 一种掩模对准传感器和光刻机
CN110133470A (zh) * 2019-06-06 2019-08-16 德淮半导体有限公司 晶圆验收处理方法及装置
CN116314001B (zh) * 2023-05-18 2023-07-21 合肥安德科铭半导体科技有限公司 一种衬底封装设备及其封装方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US634007A (en) * 1898-03-14 1899-10-03 Alfred B Lawther Apparatus for measuring frictional resistances between bodies in sliding contact.
JPH0652700B2 (ja) * 1981-09-26 1994-07-06 富士通株式会社 電子ビーム露光装置における電子ビーム露光方法
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
NL8600785A (nl) * 1986-03-27 1987-10-16 Asm Lithography Bv Positioneerinrichting met een z-manipulator en een o-manipulator.
JPH01314247A (ja) * 1988-06-13 1989-12-19 Fuji Plant Kogyo Kk プリント基板の自動露光装置
JP2847883B2 (ja) 1990-03-30 1999-01-20 株式会社ニコン 反射屈折縮小投影光学系
US5220454A (en) 1990-03-30 1993-06-15 Nikon Corporation Cata-dioptric reduction projection optical system
JPH0769162B2 (ja) * 1990-04-23 1995-07-26 大日本スクリーン製造株式会社 光学的検査システムのための自動焦点合わせ装置
US5534970A (en) 1993-06-11 1996-07-09 Nikon Corporation Scanning exposure apparatus
JP3265503B2 (ja) 1993-06-11 2002-03-11 株式会社ニコン 露光方法及び装置
JP2832673B2 (ja) * 1993-10-29 1998-12-09 株式会社オーク製作所 露光装置およびワークの露光方法
JP3559999B2 (ja) * 1994-07-29 2004-09-02 株式会社オーク製作所 マスク整合機構付露光装置およびワークの整合、露光、ならびに搬送方法。
EP0722123B1 (de) * 1995-01-12 1999-04-14 Orc Manufacturing Co., Ltd. Vorrichtung und Verfahren zur Belichtung eines Werkstücks
CN1244018C (zh) * 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
JP4029181B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置
US6262796B1 (en) * 1997-03-10 2001-07-17 Asm Lithography B.V. Positioning device having two object holders
JP3704890B2 (ja) * 1997-06-24 2005-10-12 神鋼電機株式会社 搬送装置
JPH11191585A (ja) * 1997-12-26 1999-07-13 Canon Inc ステージ装置、およびこれを用いた露光装置、ならびにデバイス製造方法
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US6788385B2 (en) * 2001-06-21 2004-09-07 Nikon Corporation Stage device, exposure apparatus and method
JP2003173958A (ja) * 2001-12-06 2003-06-20 Nikon Corp 露光方法及び露光装置

Also Published As

Publication number Publication date
CN101504512B (zh) 2012-11-14
KR101181684B1 (ko) 2012-09-19
TWI343594B (de) 2011-06-11
KR20060054426A (ko) 2006-05-22
KR20110106424A (ko) 2011-09-28
TW200511390A (en) 2005-03-16
JP4552146B2 (ja) 2010-09-29
EP1655765B1 (de) 2009-04-15
EP1655765A4 (de) 2008-01-30
JPWO2005015615A1 (ja) 2007-10-04
EP1655765A1 (de) 2006-05-10
DE602004020634D1 (de) 2009-05-28
WO2005015615A1 (ja) 2005-02-17
KR101205263B1 (ko) 2012-11-27
CN100468624C (zh) 2009-03-11
JP5152067B2 (ja) 2013-02-27
CN1833309A (zh) 2006-09-13
US20090251679A1 (en) 2009-10-08
JP2009147385A (ja) 2009-07-02
US20060187431A1 (en) 2006-08-24
CN101504512A (zh) 2009-08-12
US20100177295A1 (en) 2010-07-15
EP1995769A1 (de) 2008-11-26

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