ATE461799T1 - Verringerung von anziehungskräften zwischen siliziumscheiben - Google Patents

Verringerung von anziehungskräften zwischen siliziumscheiben

Info

Publication number
ATE461799T1
ATE461799T1 AT06757883T AT06757883T ATE461799T1 AT E461799 T1 ATE461799 T1 AT E461799T1 AT 06757883 T AT06757883 T AT 06757883T AT 06757883 T AT06757883 T AT 06757883T AT E461799 T1 ATE461799 T1 AT E461799T1
Authority
AT
Austria
Prior art keywords
attraction forces
silicon discs
reducing attraction
reducing
discs
Prior art date
Application number
AT06757883T
Other languages
English (en)
Inventor
Erik Sauar
Per Arne Wang
Original Assignee
Rec Scanwafer As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rec Scanwafer As filed Critical Rec Scanwafer As
Application granted granted Critical
Publication of ATE461799T1 publication Critical patent/ATE461799T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
AT06757883T 2005-07-01 2006-06-26 Verringerung von anziehungskräften zwischen siliziumscheiben ATE461799T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69545105P 2005-07-01 2005-07-01
PCT/NO2006/000244 WO2007004890A1 (en) 2005-07-01 2006-06-26 Reduction of attraction forces between silicon wafers

Publications (1)

Publication Number Publication Date
ATE461799T1 true ATE461799T1 (de) 2010-04-15

Family

ID=36997754

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06757883T ATE461799T1 (de) 2005-07-01 2006-06-26 Verringerung von anziehungskräften zwischen siliziumscheiben

Country Status (8)

Country Link
US (1) US7967915B2 (de)
EP (1) EP1926580B1 (de)
JP (1) JP2008545268A (de)
KR (1) KR101243268B1 (de)
CN (1) CN101213058B (de)
AT (1) ATE461799T1 (de)
DE (1) DE602006013159D1 (de)
WO (1) WO2007004890A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010095627A (ja) * 2008-10-16 2010-04-30 Denki Kagaku Kogyo Kk 搬送用組成物及び部材の搬送方法
EP2388809A4 (de) * 2009-01-13 2014-07-09 Watanabe M & Co Ltd Wafertrennvorrichtung, wafertrenn-/übertragungsvorrichtung, wafertrennverfahren, wafertrenn-/übertragungsverfahren und trenn-/übertragungsverfahren für solarzellenwafer
DE102010022289A1 (de) * 2009-09-17 2011-05-26 Gebrüder Decker GmbH & Co. KG Vorrichtung und Verfahren zum Reinigen von Wafern II
JP4668350B1 (ja) * 2010-05-28 2011-04-13 イーティーシステムエンジニアリング株式会社 半導体ウェーハの分離装置
JP5619542B2 (ja) * 2010-09-08 2014-11-05 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体基板の処理方法及び半導体装置の製造方法
JP6114116B2 (ja) * 2013-05-31 2017-04-12 信越化学工業株式会社 基板処理方法及び太陽電池の製造方法
CN216072103U (zh) * 2020-07-10 2022-03-18 深圳灵创智能有限公司 取料设备
JP7441779B2 (ja) 2020-12-14 2024-03-01 クアーズテック徳山株式会社 被加工物の切断方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2655173B2 (ja) * 1988-07-14 1997-09-17 エムテック株式会社 半導体ウェーハの分離方法及び装置
DE4100526A1 (de) * 1991-01-10 1992-07-16 Wacker Chemitronic Vorrichtung und verfahren zum automatischen vereinzeln von gestapelten scheiben
JP3524267B2 (ja) * 1996-06-04 2004-05-10 三菱マテリアル株式会社 ウェハの剥離装置
JPH1022239A (ja) * 1996-06-29 1998-01-23 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法およびその洗浄装置
JP3494202B2 (ja) * 1997-09-30 2004-02-09 荒川化学工業株式会社 ウェハー状ワーク洗浄方法並びに当該洗浄方法に用いる洗浄バスケット及び洗浄ハウジング
US6210795B1 (en) * 1998-10-26 2001-04-03 Nashua Corporation Heat-sealable adhesive label with spacer particles
FR2788375B1 (fr) * 1999-01-11 2003-07-18 Gemplus Card Int Procede de protection de puce de circuit integre
JP2000208449A (ja) * 1999-01-12 2000-07-28 Mitsubishi Materials Corp ウェ―ハの剥離方法および剥離装置
JP4578637B2 (ja) * 2000-07-24 2010-11-10 サムコ オレゴン コーポレーション 間隔保持具及びこれを用いた切断方法
JP2003100667A (ja) * 2001-09-27 2003-04-04 Itec Co Ltd ウエハ状ワークの分離洗浄方法及び分離洗浄装置
DE10220468A1 (de) * 2002-05-07 2003-11-20 Scanwafer Gmbh Verfahren und Vorrichtung zur Reinigung von Wafern

Also Published As

Publication number Publication date
US7967915B2 (en) 2011-06-28
JP2008545268A (ja) 2008-12-11
CN101213058B (zh) 2012-04-25
KR101243268B1 (ko) 2013-03-13
EP1926580B1 (de) 2010-03-24
WO2007004890A1 (en) 2007-01-11
DE602006013159D1 (de) 2010-05-06
CN101213058A (zh) 2008-07-02
US20090117713A1 (en) 2009-05-07
KR20080042773A (ko) 2008-05-15
EP1926580A1 (de) 2008-06-04

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Legal Events

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