ATE356430T1 - Blitztempering - Google Patents

Blitztempering

Info

Publication number
ATE356430T1
ATE356430T1 AT02748190T AT02748190T ATE356430T1 AT E356430 T1 ATE356430 T1 AT E356430T1 AT 02748190 T AT02748190 T AT 02748190T AT 02748190 T AT02748190 T AT 02748190T AT E356430 T1 ATE356430 T1 AT E356430T1
Authority
AT
Austria
Prior art keywords
present
energy source
radiation
wafer
tempering
Prior art date
Application number
AT02748190T
Other languages
German (de)
English (en)
Inventor
Woo Sik Yoo
Original Assignee
Wafermasters Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wafermasters Inc filed Critical Wafermasters Inc
Application granted granted Critical
Publication of ATE356430T1 publication Critical patent/ATE356430T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Control Of Resistance Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
AT02748190T 2001-07-20 2002-07-18 Blitztempering ATE356430T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/910,298 US6376806B2 (en) 2000-05-09 2001-07-20 Flash anneal

Publications (1)

Publication Number Publication Date
ATE356430T1 true ATE356430T1 (de) 2007-03-15

Family

ID=25428586

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02748190T ATE356430T1 (de) 2001-07-20 2002-07-18 Blitztempering

Country Status (8)

Country Link
US (1) US6376806B2 (enExample)
EP (1) EP1410423B1 (enExample)
JP (2) JP2004536457A (enExample)
KR (1) KR100809240B1 (enExample)
AT (1) ATE356430T1 (enExample)
DE (1) DE60218690T2 (enExample)
TW (1) TWI270104B (enExample)
WO (1) WO2003009350A2 (enExample)

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US8148663B2 (en) 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
JP5465373B2 (ja) * 2007-09-12 2014-04-09 大日本スクリーン製造株式会社 熱処理装置
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US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9842753B2 (en) * 2013-04-26 2017-12-12 Applied Materials, Inc. Absorbing lamphead face
JP5718975B2 (ja) * 2013-05-23 2015-05-13 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
JP5898258B2 (ja) * 2014-05-01 2016-04-06 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US9287148B1 (en) * 2014-12-18 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Dynamic heating method and system for wafer processing
CN108028214B (zh) * 2015-12-30 2022-04-08 玛特森技术公司 用于毫秒退火系统的气体流动控制
CN107393971A (zh) * 2016-05-16 2017-11-24 昱晶能源科技股份有限公司 回复太阳能电池模块的效率的方法及其可携式装置
JP6783571B2 (ja) * 2016-07-13 2020-11-11 日本碍子株式会社 放射装置及び放射装置を用いた処理装置
CN110785684B (zh) 2017-06-29 2022-06-03 3M创新有限公司 制品及其制造方法
JP7508303B2 (ja) 2020-07-31 2024-07-01 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法

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Also Published As

Publication number Publication date
DE60218690D1 (de) 2007-04-19
WO2003009350A2 (en) 2003-01-30
JP2004536457A (ja) 2004-12-02
US6376806B2 (en) 2002-04-23
DE60218690T2 (de) 2007-12-06
JP2008153680A (ja) 2008-07-03
KR20030051631A (ko) 2003-06-25
US20010047990A1 (en) 2001-12-06
TWI270104B (en) 2007-01-01
JP4931833B2 (ja) 2012-05-16
KR100809240B1 (ko) 2008-02-29
EP1410423B1 (en) 2007-03-07
WO2003009350A3 (en) 2003-06-19
EP1410423A2 (en) 2004-04-21

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